Patents by Inventor Chien-Wei Wang
Chien-Wei Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8841066Abstract: Photoresist stripping solutions are disclosed. An exemplary solution includes an organic solvent and an organic base, wherein the organic base is represented by the formula: wherein R1—Z1, R2—Z2, R3—Z3, and R4—Z4 are steric hindered functional groups, and further wherein R1, R2, R3, and R4 are each an alkyl group and Z1, Z2, Z3, and Z4 are each a pendant group selected from the group consisting of —Cl, —Br, —I, —NO2, —SO3—, —H—, —CN, —NCO, —OCN, —CO2—, —OC(O)CR*, —SR*, —SO2N(R*)2, —SO2R*, —OC(O)R*, —C(O)R*, —Si(R*)3, and an epoxyl group.Type: GrantFiled: July 15, 2013Date of Patent: September 23, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chien-Wei Wang, Ching-Yu Chang
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Publication number: 20140272714Abstract: A method of lithography patterning includes forming a first resist pattern on a substrate, wherein the first resist pattern including a plurality of openings. A second resist pattern is formed on the substrate and within the plurality of openings of the first resist pattern, wherein the second resist pattern includes at least one opening therein on the substrate. The first resist pattern is removed to uncover the substrate underlying the first resist pattern.Type: ApplicationFiled: June 3, 2014Publication date: September 18, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: CHUN-KUANG CHEN, Hsiao-Wei Yeh, Chih-An Lin, Chien-Wei Wang, Feng-Cheng Hsu
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Patent number: 8822347Abstract: A system to form a wet soluble lithography layer on a semiconductor substrate includes providing the substrate, depositing a first layer comprising a first material on the substrate, and depositing a second layer comprising a second material on the substrate. In an embodiment, the first material comprises a different composition than the second material and one of the first layer and the second layer includes silicon.Type: GrantFiled: April 27, 2009Date of Patent: September 2, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chien-Wei Wang, Ching-Yu Chang
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Patent number: 8741552Abstract: A method of lithography patterning includes forming a first resist pattern on a substrate, wherein the first resist pattern including a plurality of openings. A second resist pattern is formed on the substrate and within the plurality of openings of the first resist pattern, wherein the second resist pattern includes at least one opening therein on the substrate. The first resist pattern is removed to uncover the substrate underlying the first resist pattern.Type: GrantFiled: February 9, 2010Date of Patent: June 3, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Kuang Chen, Hsiao-Wei Yeh, Chih-An Lin, Chien-Wei Wang, Feng-Cheng Hsu
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Publication number: 20140134538Abstract: A lithography method includes forming a photosensitive layer on a substrate, exposing the photosensitive layer, baking the photosensitive layer., and developing the exposed photosensitive layer. The photosensitive layer includes a polymer that turns soluble to a base solution in response to reaction with acid, a plurality of photo-acid generators (PAGs) that decompose to form acid in response to radiation energy, and a plurality of quenchers having boiling points distributed between about 200 C and about. 350 C. The quenchers also have molecular weights distributed between 300 Dalton and about 20000 Dalton, and are vertically distributed in the photosensitive layer such that a first concentration C1 at a top portion of the photosensitive layer is greater than a second concentration C2 at a bottom portion of the photosensitive layer.Type: ApplicationFiled: November 14, 2013Publication date: May 15, 2014Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chien-Wei Wang, Ching-Yu Chang
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Patent number: 8658344Abstract: A resist material and methods using the resist material are disclosed herein. An exemplary method includes forming a resist layer over a substrate, wherein the resist layer includes a polymer, a photoacid generator, an electron acceptor, and a photodegradable base; performing an exposure process that exposes portions of the resist layer with radiation, wherein the photodegradable base is depleted in the exposed portions of the resist layer during the exposure process; and performing an developing process on the resist layer.Type: GrantFiled: June 27, 2012Date of Patent: February 25, 2014Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chien-Wei Wang, Ching-Yu Chang, Tsai-Sheng Gau, Burn Jeng Lin
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Patent number: 8586290Abstract: A lithography method includes forming a photosensitive layer on a substrate, exposing the photosensitive layer, baking the photosensitive layer, and developing the exposed photosensitive layer. The photosensitive layer includes a polymer that turns soluble to a base solution in response to reaction with acid, a plurality of photo-acid generators (PAGs) that decompose to form acid in response to radiation energy, and a plurality of quenchers having boiling points distributed between about 200 C and about 350 C. The quenchers also have molecular weights distributed between 300 Dalton and about 20000 Dalton, and are vertically distributed in the photosensitive layer such that a first concentration C1 at a top portion of the photosensitive layer is greater than a second concentration C2 at a bottom portion of the photosensitive layer.Type: GrantFiled: November 19, 2009Date of Patent: November 19, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chien-Wei Wang, Ching-Yu Chang
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Publication number: 20130303421Abstract: Photoresist stripping solutions are disclosed. An exemplary solution includes an organic solvent and an organic base, wherein the organic base is represented by the formula: wherein R1—Z1, R2—Z2, R3—Z3, and R4—Z4 are steric hindered functional groups, and further wherein R1, R2, R3, and R4 are each an alkyl group and Z1, Z2, Z3, and Z4 are each a pendant group selected from the group consisting of —Cl, —Br, —I, —NO2, —SO3—, —H—, —CN, —NCO, —OCN, —CO2—, —OC(O)CR*, —SR*, —SO2N(R*)2, —SO2R*, —OC(O)R*, —C(O)R*, —Si(R*)3, and an epoxyl group.Type: ApplicationFiled: July 15, 2013Publication date: November 14, 2013Inventors: Chien-Wei Wang, Ching-Yu Chang
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Patent number: 8563231Abstract: Methods for forming a pattern in a lithography process for semiconductor wafer manufacturing are provided. In an example, a method includes forming a photoresist layer over a material layer; performing a first exposure process on the photoresist layer, thereby forming an exposed photoresist layer having soluble portions and unsoluble portions; treating the exposed photoresist layer, wherein the treating includes one of performing a second exposure process on the exposed photoresist layer and forming an adsorbing chemical layer over the exposed photoresist layer; and developing the exposed and treated photoresist layer to remove the soluble portions of the photoresist layer, wherein the unsoluble portions of the photoresist layer form a photoresist pattern that exposes portions of the material layer.Type: GrantFiled: September 22, 2011Date of Patent: October 22, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chien-Wei Wang, Ko-Bin Kao, Wei-Liang Lin, Jui-Ching Wu, Chia-Hsiang Lin, Ai-Jen Jung
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Publication number: 20130241865Abstract: The present invention discloses a touch display device and a touch measuring method for determining touch positions thereof. The touch display device includes a touch sensing module, a substrate, a pressure sensing device disposed between the touch sensing module and the substrate, and an integrating device. The method includes a first position measuring step, a step of sensing an initial pressure, an initial pressure sensing step, a second position measuring step, a real-time pressure sensing step and a data integrating step. The first and second position measuring steps are to measure X-axis and Y-axis coordination values. The real-time pressure sensing step is to sense pressure change between the first and second positions. The data integrating step is to integrate data of the first and second positions and initial and real-time pressure values. The sensed pressure represents a Z-axis position corresponding to X-axis and Y-axis.Type: ApplicationFiled: March 19, 2012Publication date: September 19, 2013Applicant: Cheng Uei Precision Industry Co., LTD.Inventors: SHENG-YUAN LIN, Jui-Hsiang Lo, Hsueh-Yu Lu, Huang-Jen Chen, Chi-Ming Tseng, Chien-Wei Wang
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Patent number: 8512939Abstract: A method for fabricating an integrated circuit device is disclosed. The method may include providing a substrate; forming a first material layer over the substrate; forming a patterned second material layer over the substrate; and removing the patterned second material layer with a fluid comprising a steric hindered organic base and organic solvent.Type: GrantFiled: September 25, 2009Date of Patent: August 20, 2013Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chien-Wei Wang, Ching-Yu Chang
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Publication number: 20130075364Abstract: Methods for forming a pattern in a lithography process for semiconductor wafer manufacturing are provided. In an example, a method includes forming a photoresist layer over a material layer; performing a first exposure process on the photoresist layer, thereby forming an exposed photoresist layer having soluble portions and unsoluble portions; treating the exposed photoresist layer, wherein the treating includes one of performing a second exposure process on the exposed photoresist layer and forming an adsorbing chemical layer over the exposed photoresist layer; and developing the exposed and treated photoresist layer to remove the soluble portions of the photoresist layer, wherein the unsoluble portions of the photoresist layer form a photoresist pattern that exposes portions of the material layer.Type: ApplicationFiled: September 22, 2011Publication date: March 28, 2013Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chien-Wei Wang, Ko-Bin Kao, Wei-Liang Lin, Jui-Ching Wu, Chia-Hsiang Lin, Ai-Jen Jung
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Publication number: 20130006825Abstract: Information regarding individuals that fit a bad performance definition, such as individuals that have previously defaulted on a financial instrument or have declared bankruptcy, is used to develop a model that is usable to determine whether an individual that does not fit the bad performance definition is more likely to subsequently default on a financial instrument or to declare bankruptcy. The model may be used to generate a score for each individual, and the score may be used to segment the individual into a segment of a segmentation structure that includes individuals with related scores, where segments may include different models for generating a final risk score for the individuals assigned to the particular segments. The segment to which an individual is assigned, which may be determined based at least partly on the score assigned to the individual, may affect the final risk score that is assigned to the individual.Type: ApplicationFiled: July 23, 2012Publication date: January 3, 2013Applicant: EXPERIAN INFORMATION SOLUTIONS, INC.Inventors: Chuck Robida, Chien-Wei Wang
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Patent number: 8304179Abstract: The present disclosure provides a method for manufacturing a semiconductor device. The method includes coating a photoresist on a substrate. The photoresist is exposed to radiation. The radiation exposed photoresist is baked. The radiation exposed and baked photoresist is developed to create an image pattern. The image pattern is treated with a treating material. An ion implantation process is performed to the substrate and the treated image pattern. The image pattern is stripped from the substrate. A carbon atom ratio of the treating material is less than a carbon atom ratio of the photoresist.Type: GrantFiled: May 11, 2009Date of Patent: November 6, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chien-Wei Wang, Ching-Yu Chang
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Publication number: 20120264057Abstract: A resist material and methods using the resist material are disclosed herein. An exemplary method includes forming a resist layer over a substrate, wherein the resist layer includes a polymer, a photoacid generator, an electron acceptor, and a photodegradable base; performing an exposure process that exposes portions of the resist layer with radiation, wherein the photodegradable base is depleted in the exposed portions of the resist layer during the exposure process; and performing an developing process on the resist layer.Type: ApplicationFiled: June 27, 2012Publication date: October 18, 2012Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chien-Wei Wang, Ching-Yu Chang, Tsai-Sheng Gau, Burn Jen Lin
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Patent number: 8216767Abstract: A method for fabricating an integrated circuit device is disclosed. The method includes providing a substrate; forming a first material layer over the substrate; forming a second material layer over the first material layer, wherein the second material layer comprises a photodegradable base material; and exposing at least a portion of the second material layer.Type: GrantFiled: September 8, 2009Date of Patent: July 10, 2012Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chien-Wei Wang, Ching-Yu Chang, Tsai-Sheng Gau, Burn Jeng Lin
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Publication number: 20120090547Abstract: Provided is a system for vapor deposition of a coating material onto a semiconductor substrate. The system includes a chemical supply chamber, a supply nozzle operable to dispense vapor, and a heating element operable to provide heat to a substrate in-situ with the dispensing of vapor. The system may further include reaction chamber(s) and/or mixing chamber(s).Type: ApplicationFiled: December 27, 2011Publication date: April 19, 2012Applicant: Taiwan Semiconductor Manufacturing Company, Ltd., ("TSMC")Inventors: Chien-Wei Wang, David Ding-Chung Lu, Ching-Yu Chang
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Patent number: 8105954Abstract: Provided is a method and system for vapor deposition of a coating material onto a semiconductor substrate. In an embodiment, photoresist is deposited. An in-situ baking process may be performed with the vapor deposition. In an embodiment, a ratio of chemical components of a material to be deposited onto the substrate is changed during the deposition. Therefore, a layer having a gradient chemical component distribution may be provided. In an embodiment, a BARC layer may be provided which includes a gradient chemical component distribution providing an n,k distribution through the layer. Other materials that may be vapor deposited include pattern freezing material.Type: GrantFiled: October 20, 2008Date of Patent: January 31, 2012Assignee: Aiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chien-Wei Wang, David Ding-Chung Lu, Ching-Yu Chang
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Publication number: 20120003582Abstract: A method and photoresist material for the patterning of integrated circuit (IC) components using ultra violet (UV) and extreme ultraviolet lithography (EUV) that includes providing a substrate, forming a first material layer over the substrate, forming a second material layer over the first material layer, the second material layer having a luminescent agent, and exposing one or more portions of the second material layer.Type: ApplicationFiled: June 30, 2010Publication date: January 5, 2012Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chien-Wei WANG, Chun-Ching HUANG
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Publication number: 20110159670Abstract: Provided is a photoresist that includes a polymer having a backbone that is breakable and a photo acid generator that is free of bonding from the polymer. Further, provided is a method of fabricating a semiconductor device. The method includes providing a device substrate. A material layer is formed over the substrate. A photoresist material is formed over the material layer. The photoresist material has a polymer that includes a backbone. The photoresist material is patterned to form a patterned photoresist layer. A fabrication process is then performed to the material layer, wherein the patterned photoresist layer serves as a mask in the fabrication process. Thereafter, the patterned photoresist layer is treated in a manner that breaks the backbone of the polymer. The patterned photoresist layer is then removed.Type: ApplicationFiled: December 30, 2009Publication date: June 30, 2011Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Chien-Wei Wang, Ming-Feng Shieh, Ching-Yu Chang