Abstract: The present disclosure describes a metal-oxide-semiconductor field-effect transistor (MOSFET) device. The MOSFET device includes a first-type substrate, a deep-second-type well in the first-type substrate, a first-type well over the deep-second-type well, and a second-type well over the deep-second-type well. The second-type well and the deep-second-type well form an enclosed space that includes the first-type well. The MOSFET also includes an embedded semiconductor region (ESR) in a vicinity of the enclosed space. The ESR includes a dopant concentration lower than at least one of a dopant concentration of the first-type well, a dopant concentration of the second-type well, and a dopant concentration of the deep-second-type well.

Abstract: A support device for supporting a lens includes a support component. The support component includes a main body, a plurality of first support portions and a plurality of second support portions. Each of the plurality of first support portions is disposed on the main body, has a first support position thereon having a first height, and is configured to rigidly support the lens. Each of the plurality of second support portions is disposed on the main body, has a second support position thereon having a second height, and is configured to flexibly support the lens. When a configuration relationship between the support component and the lens becomes a decoupling relationship, the second height is larger than the first height. When the configuration relationship is changed to a coupling relationship, an absolute difference value between the first and the second heights is less than a threshold.

Abstract: A capacitor cell is provided. A first PMOS transistor is coupled between a power supply and a first node, having a gate coupled to a second node. A first NMOS transistor coupled between a ground and the second node, having a gate coupled to the first node. A second PMOS transistor, having a drain coupled to the second node, a gate coupled to the second node, and a source coupled to the power supply or the first node. A second NMOS transistor, having a drain coupled to the first node, a gate coupled to the first node, and a source coupled to the ground or the second node.

Abstract: A circuit includes a first transistor, a second transistor and a first resistive load. The first transistor has a first terminal coupled to a first reference voltage terminal, a second terminal coupled to a second reference voltage terminal, and a control terminal coupled to the first reference voltage terminal. The second transistor has a first terminal coupled to the second reference voltage terminal, a second terminal coupled to the first reference voltage terminal and the control terminal of the first transistor, and a control terminal coupled to the second reference voltage terminal and the second terminal of the first transistor. The first transistor further comprises a third terminal coupled to the second reference voltage terminal through the first resistive load.

Abstract: A support device for supporting a lens includes a support component. The support component includes a main body, a plurality of first support portions and a plurality of second support portions. Each of the plurality of first support portions is disposed on the main body, has a first support position thereon having a first height, and is configured to rigidly support the lens. Each of the plurality of second support portions is disposed on the main body, has a second support position thereon having a second height, and is configured to flexibly support the lens. When a configuration relationship between the support component and the lens becomes a decoupling relationship, the second height is larger than the first height. When the configuration relationship is changed to a coupling relationship, an absolute difference value between the first and the second heights is less than a threshold.

Abstract: Lamp equipment having a LED, a driver and a bluetooth module is disclosed. The driver is connected to the LED to control thereof, and the bluetooth module is connected to the driver for receiving power. The bluetooth module supports a mesh-network mode and a beacon mode and switches between this two modes periodically. When working under the mesh-network mode, the bluetooth module is able to execute peer-to-peer transmission with other bluetooth modules within its transmission range, and adjusts its beacon mode's status and beacon content based on received command and data. When working under the beacon mode, the bluetooth module is able to broadcast the beacon content, so as to push message externally and provide micro-location function for the outside.

Abstract: Lamp equipment having a LED, a driver and a bluetooth module is disclosed. The driver is connected to the LED to control thereof, and the bluetooth module is connected to the driver for receiving power. The bluetooth module supports a mesh-network mode and a beacon mode and switches between this two modes periodically. When working under the mesh-network mode, the bluetooth module is able to execute peer-to-peer transmission with other bluetooth modules within its transmission range, and adjusts its beacon mode's status and beacon content based on received command and data. When working under the beacon mode, the bluetooth module is able to broadcast the beacon content, so as to push message externally and provide micro-location function for the outside.

Abstract: A manufacturing method of nitrogenous carbon electrode and flow cell provided therewith is disclosed. Firstly, a preformed body is performed by mixing a carbon material, a polymeric material and a modifier. A formation process is performed on the preformed body to obtain a formed body. A high sintering is then performed, such that a part of the polymeric material is decomposed and then removed, while the other part of polymeric material is cooperated with the carbon material to form a skeletal structure including a plurality of pores, and that the nitrogen in the modifier is adhered to the skeletal structure to form a nitrogenous functional group, and then form a nitrogenous carbon electrode. The nitrogenous carbon electrode may be applied to the flow cell. Thereby, electric conductivity in a vertical direction may be enhanced, so as to reduce internal resistance of the flow cell and increase discharge power.

Abstract: A photovoltaic device includes a substrate, a back contact layer disposed above the substrate, and an absorber layer disposed above the back contact layer. The absorber layer includes at least two regions at respectively different horizontally locations. Each respective region has a respectively different concentration profile of an ingredient at a respective depth of the absorber layer.

Abstract: A connection method for enhancing information security of an electronic system is disclosed. The electronic system comprises a plurality of communication devices. Each communication device is capable of establishing a plurality of wireless communication connections with another communication device. The plurality of wireless communication connections comprises a near field communication connection. The connection method comprises a first communication device and a second communication device utilizing the near field communication connection to perform a mutual verification process before the first communication device establishes a wireless connection with the second communication device, and the first communication device and the second communication device being allowed to establish a wireless communication connection of the plurality of wireless communication connections after the first communication device and the second communication device pass the mutual verification process.

Abstract: Provided is a structure and method for forming CIS-based absorber layers for thin-film solar cells that include three-dimensional compositional profiles. The disclosure provides a patterned absorber layer with two or more different regions, each of the regions having a different concentration profile of one or more components. In some embodiments, the different regions have different respective GGI profiles. GGI represents an atomic ratio of Ga/(Ga+In) in CIS-based absorber materials and in some embodiments the two or more different regions have GGI gradients from top to bottom of the CIS-based absorber layer. The method includes using two evaporation sources in a co-evaporation system to produce the two or more different regions adjacent one another on a substrate.

Abstract: A connection method for an electronic system is disclosed. The electronic system comprises a plurality of communication devices. Each communication device can establish a plurality of wireless connection modes with another communication device.

Abstract: A connection method for enhancing information security of an electronic system is disclosed. The electronic system comprises a plurality of communication devices. Each communication device is capable of establishing a plurality of wireless communication connections with another communication device. The plurality of wireless communication connections comprises a near field communication connection. The connection method comprises a first communication device and a second communication device utilizing the near field communication connection to perform a mutual verification process before the first communication device establishes a wireless connection with the second communication device, and the first communication device and the second communication device being allowed to establish a wireless communication connection of the plurality of wireless communication connections after the first communication device and the second communication device pass the mutual verification process.

Abstract: A method of fabricating a photovoltaic device includes a step of forming an absorber layer above a substrate, and a step of forming a surface layer on the absorber layer. The absorber layer includes an I-III-VI2 compound, which contains a Group I element, a Group III element and a Group VI element. The surface layer includes an I-III-VI2 compound, which contains a Group I element, a Group III element and a Group VI element, and has an atomic ratio of the Group I element to the Group III element in the range of from 0.1 to 0.9.

Abstract: A solar cell and a method of fabricating the solar cell is described. The solar cell includes a substrate, a back contact layer over the substrate, a P1 trench on an upper portion of the back contact layer, and an insulator disposed in the P1 trench. The solar cell can also include an absorber layer over the back contact layer and insulator and a front contact layer over the absorber layer.

Abstract: A photovoltaic device includes a substrate, a back contact layer disposed above the substrate, and an absorber layer disposed above the back contact layer. The absorber layer includes at least two regions at respectively different horizontally locations. Each respective region has a respectively different concentration profile of an ingredient at a respective depth of the absorber layer.

Abstract: A tandem solar module includes first and second thin film solar cell circuits and a transparent coupling layer disposed between the first and second thin film circuits for securing the first and second thin film circuits together in a stack. Each solar cell circuit includes a multi-layer structure, the multi-layer structure including a substrate, a first conductive layer formed over the substrate, a buffer layer, an absorber layer formed between the first conductive layer and the buffer layer, and a second conductive layer formed over the buffer layer. The first thin film solar cell circuit and second thin film solar cell circuit are oriented with respect to one another such that the absorber layers are disposed between the substrates of the circuits. The first and second solar cell circuits have different bandgap profiles.

Abstract: A method and system provide for depositing a TCO, transparent conductive oxide, film in one chamber of a manufacturing tool then irradiating the TCO film with light energy in another chamber of the same tool. The TCO film is used in a solar cell and formed on a solar cell substrate in some embodiments. The method includes irradiating the TCO film for a time and energy to reduce resistance of the TCO film without reducing transmittance. One or multiple light sources are used in the light irradiation chamber. Light in the infrared range, visible light range and ultraviolet light range are used either individually or in combination.

Abstract: A method of forming an absorber layer of a photovoltaic device includes forming a metal precursor layer above a substrate, and depositing a sulfur-containing precursor onto the metal precursor layer. The method further includes depositing a selenium-containing precursor onto the metal precursor layer after the step of depositing a sulfur-containing precursor.

Abstract: A method of fabricating a photovoltaic device includes a step of forming an absorber layer above a substrate, and a step of forming a surface layer on the absorber layer. The absorber layer includes an I-III-VI2 compound, which contains a Group I element, a Group III element and a Group VI element. The surface layer includes an I-III-VI2 compound, which contains a Group I element, a Group III element and a Group VI element, and has an atomic ratio of the Group I element to the Group III element in the range of from 0.1 to 0.9.