Abstract: A cold plate is provided and includes a casing, a guiding baffle, a base, a first inlet passage, an outlet passage and a pump. The guiding baffle is disposed in the casing and defines a fluid storage chamber together with the casing. The fluid storage chamber is filled with a working medium. The guiding baffle includes a communication opening. The base, the casing and guiding baffle together define a working space. The working medium flows into the working space through the communication opening, and the base is used for absorbing thermal energy and transfers the thermal energy to the working medium. The first inlet passage communicates with the fluid storage chamber and allows the cooled working medium to flow into the fluid storage chamber. The outlet passage communicates with the working space to allow the heated working medium to be discharged from the working space.

Abstract: A three-phase expandable AC system based on battery reconfiguration and a control method thereof are provided. The system includes a reconfigurable battery array capable of connecting to a load or being tied to a grid, and having a plurality of battery array modules. The reconfigurable battery array may perform charging or discharging with respect to the load or the grid, and may perform one of operations including: generating a single-phase AC voltage corresponding respectively to outputs of the battery array modules; generating a three-phase AC voltage corresponding to three battery array modules selected from the plurality of battery array modules; and generating a plurality of three-phase AC voltages in parallel from the plurality of battery array modules, and merging the three-phase AC voltages in parallel to scale power.

Abstract: A heat exchanger includes a heat-absorbing part, two vapor conduits, a return conduit and a condensing part. The heat-absorbing part includes a vapor zone and a liquid zone. A first end of each vapor conduit is connected with the vapor zone of the heat-absorbing part. A first end of the return conduit is connected with the liquid zone of the heat-absorbing part. The condensing part includes a vapor-inputting chamber, a liquid-outputting chamber, a partition plate, a communication chamber, a first condenser tube group and a second condenser tube group. The vapor-inputting chamber is connected with a second end of each vapor conduit. The liquid-outputting chamber is connected with a second end of the return conduit. A loop is defined by the heat-absorbing part, the at least two vapor conduits, the return conduit and the condensing part collaboratively.

Abstract: The present invention provides a high voltage device and a manufacturing method thereof. The high voltage device includes: a semiconductor layer, a drift oxide region, a well, a body region, a gate, at least one sub-gate, a source, and a drain. The drift oxide region is located on a drift region in an operation region. The sub-gate is formed on the drift oxide region right above the drift region. The sub-gate is parallel with the gate. A conductive layer of the gate has a first conductivity type, and a conductive layer of the sub-gate has a second conductivity type or is an intrinsic semiconductor structure.

Abstract: A water-cooling head includes a casing, a base, an input channel, an output channel and a pump. An active space is defined by the base and the casing collaboratively. A working medium is filled in the active space. The heat absorbed by the base is transferred to the working medium. The input channel is in communication with the active space. The cooled working medium is introduced into the active space through the input channel. The output channel is in communication with the active space. The heated working medium is outputted from the active space through the output channel. The pump is installed on the casing, and includes an impeller. The impeller is disposed within the active space and located near the output channel. The impeller is driven to guide the working medium to be outputted from the active space through the output channel.

Abstract: A photo-detecting apparatus includes an absorption layer configured to absorb photons and to generate photo-carriers from the absorbed photons, wherein the absorption layer includes germanium. A carrier guiding unit is electrically coupled to the absorption layer, wherein the carrier guiding unit includes a first switch including a first gate terminal.

Abstract: A pump module includes a main body, a first pump and a second pump. The main body includes a fluid channel, a first mounting hole and a second mounting hole. The fluid channel is exposed through the first mounting hole and the second mounting hole. The first pump is installed in the first mounting hole and sealedly coupled with the first mounting hole. The second pump is installed in the second mounting hole and sealedly coupled with the second mounting hole. A working liquid in the fluid channel is transferred through the first pump and the second pump sequentially. Even if one of the first pump and the second pump is damaged, the other of the first pump and the second pump is normally operated to move the working liquid in the fluid channel.

Abstract: A heat dissipating plate includes a casing, a capillary structure layer, a support structure, and heat dissipating liquid. The casing includes a first substrate and a second substrate, which is disposed opposite to the first substrate to form a non-vacuum sealed cavity. The capillary structure layer is disposed in a first region of the non-vacuum sealed cavity and defines a first flow space. The support structure is disposed in a second region of the non-vacuum sealed cavity and defines a second flow space. The heat dissipating liquid is disposed in the non-vacuum sealed cavity, the liquid amount of which is more than 50% of the total capacity of the first flow space and the second flow space, and flows between the first flow space and the second flow space. The invention also provides a method for manufacturing the heat dissipation plate and an electronic device having the heat dissipation plate.

Abstract: Disclosures of the present invention describe a halide semiconductor memristor that is suitable for being as an artificial synapse. The halide semiconductor memristor comprises a first electrode layer, an active layer and a second electrode layer, wherein the active layer comprises a first oxide semiconductor film formed on the first electrode layer, a halide semiconductor film formed on the first oxide semiconductor film, and a second oxide semiconductor film formed on the halide semiconductor film Moreover, a variety of experimental data have proved that, this halide semiconductor memristor is indeed suitable for being adopted as a plurality of artificial synapses that are used in manufacture of a neuromorphic device, and exhibits many advantages, including: capable of being driven by a low operation voltage, having a multi-stage adjustable resistance state, and a wide dynamic range of the switching resistance states.

Abstract: A photo-detecting apparatus includes an absorption layer configured to absorb photons and to generate photo-carriers from the absorbed photons, wherein the absorption layer includes germanium. A carrier guiding unit is electrically coupled to the absorption layer, wherein the carrier guiding unit includes a first switch including a first gate terminal.

Abstract: A photo-detecting apparatus is provided. The photo-detecting apparatus includes at least one pixel, and each pixel includes N subpixels, wherein each of the subpixels comprises a detection region, two first conductive contacts, wherein the detection region is between the two first conductive contacts, wherein N is a positive integer and is ?2.

Abstract: Provided is a cold plate including: a heat absorption space for a working medium to be filled therein; a heat transfer structure disposed on a base within the heat absorption space for transferring thermal energy generated from a heat source that is in contact with the base to the working medium; and a flow guide structure disposed in the heat absorption space for guiding the working medium. The flow guide structure of the cold plate can effectively improve the efficiency of thermal energy absorption of the working medium.

Abstract: The present invention discloses a Wireless Local Area Network (WLAN) and Bluetooth (BT) device including a WLAN circuit and a BT circuit. The WLAN circuit starts a WLAN slot according to a beacon of a beacon signal from an access point and executes WLAN communication. The WLAN slot ends after a measured reception time point of the beacon so as to prevent missing the beacon. The BT circuit starts a BT slot after the end of the WLAN slot and executes BT communication. If the BT slot is shorter than the period of the beacon signal minus the WLAN slot, the WLAN circuit earns additional time to start an extended WLAN slot after the end of the BT slot for carrying on the WLAN communication. The extended WLAN slot is not longer than the period of the beacon signal minus the sum of the WLAN and BT slots.

Abstract: A rotatable water-cooling tube and an electronic device with the water-cooling tube are provided. The water-cooling tube includes a first tube body, a second tube body, a third tube body, a first connector and a second connector. The first tube body is in communication with the second tube body and the third tube body through the first connector and the second connector. The first tube body is rotatable with the first connector and the second connector. Consequently, the first tube body can be freely rotated to a proper position. The technology of the present invention is helpful to assemble and disassemble the heat generation component under the rotatable water-cooling tube.

Abstract: A holographic display system includes a light source that emits coherent light; a lateral displacement beam splitter that optically receives the coherent light and generates first reference light and second reference light; a first spatial light modulator (SLM) and a second SLM that optically receive the first reference light and the second reference light respectively, and construct first phase-only function (POF) light and second POF light respectively; a first beam splitter and a second beam splitter that optically receive the first POF light and the second POF light respectively, and generate first split light and second split light respectively; and a plurality of polarizers disposed between the first SLM and the first beam splitter, and between the second SLM and the second beam splitter, respectively.

Abstract: A wireless communication device and a dynamic anti-interference method for the same are provided. The device includes at least two wireless communication circuits. When the method operates in the wireless communication device, the device monitors activities of every wireless communication circuit through a clear channel assessment method for acquiring signal strength of every wireless communication circuit. The assessment allows the device to perform a corresponding anti-interference measure for each of the wireless communication circuits. For example, when the device acknowledges that a second wireless communication circuit of the device starts to work as a first wireless communication circuit transmits or receives signals, the device controls a receiver or a transmitter of the second wireless communication circuit to perform an anti-interference measure such as a gain control for a receiver or power adjustment for a transmitter.

Abstract: A light supply method is provided. The light supply method includes: providing a first driving signal in a first time interval by a driver and providing a first time-varying light by a light source module in response to the first driving signal; providing a second driving signal in a second time interval after the first time interval by the driver and providing a first fixed light by the light source module in response to the second driving signal; and providing a third driving signal by the driver in a third time interval after the second time interval and providing a second time-varying light by the light source module in response to the third driving signal.

Abstract: A high voltage device includes: a semiconductor layer, an isolation structure, a drift oxide region, a well, a body region, a body contact, a buffer region, a gate, and a source and a drain. The body contact includes a main body contact and at least one sub-body contact. The main body contact is adjacent to the source, wherein the main body contact and the source are rectangles that extend along a width direction, and the source is located between the main body contact and the gate. The sub-body contact extends from the main body contact toward the gate and contacts an inverse current channel. The buffer region encompasses all the periphery of the body region below a top surface of the semiconductor layer, wherein an impurity concentration of the buffer region is lower than an impurity concentration of the body region.

Abstract: A photo-detecting apparatus is provided. The photo-detecting apparatus includes: a substrate made by a first material or a first material-composite; an absorption layer made by a second material or a second material-composite, the absorption layer being supported by the substrate and the absorption layer including: a first surface; a second surface arranged between the first surface and the substrate; and a channel region having a dopant profile with a peak dopant concentration equal to or more than 1×1015 cm?3, wherein a distance between the first surface and a location of the channel region having the peak dopant concentration is less than a distance between the second surface and the location of the channel region having the peak dopant concentration, and wherein the distance between the first surface and the location of the channel region having the peak dopant concentration is not less than 30 nm.

Abstract: Structures and techniques introduced here enable the design and fabrication of photodetectors (PDs) and/or other electronic circuits using typical semiconductor device manufacturing technologies meanwhile reducing the adverse impacts on PDs' performance. Examples of the various structures and techniques introduced here include, but not limited to, a pre-PD homogeneous wafer bonding technique, a pre-PD heterogeneous wafer bonding technique, a post-PD wafer bonding technique, their combinations, and a number of mirror equipped PD structures. With the introduced structures and techniques, it is possible to implement PDs using typical direct growth material epitaxy technology while reducing the adverse impact of the defect layer at the material interface caused by lattice mismatch.