Abstract: A sensor package structure is provided. The sensor package structure includes a substrate, a sensor chip, a ring-shaped wall, and a light-permeable layer. The substrate has a first surface and a second surface that is opposite to the first surface. The first surface of the substrate has a chip-bonding region and a connection region that surrounds the chip-bonding region, and the substrate has a plurality of protrusions arranged in the connection region. The sensor chip is disposed on the chip-bonding region of the substrate and is electrically coupled to the substrate. The ring-shaped wall is formed on the connection region of the substrate, and the protrusions of the substrate are embedded in and gaplessly connected to the ring-shaped wall. The light-permeable layer is disposed on the ring-shaped wall, and the light-permeable layer, the ring-shaped wall, and the substrate jointly define an enclosed space therein.

Abstract: A sensor package structure includes a substrate, a sensor chip disposed on the substrate, a light-curing layer disposed on the sensor chip, a light-permeable layer disposed on the light-curing layer, a shielding layer being ring-shaped and disposed on an inner surface of the light-permeable layer, and a package body that is formed on the substrate. A projection region defined by orthogonally projecting the shielding layer onto a top surface of the sensor chip surrounds a sensing region of the sensor chip. A portion of the shielding layer in contact with the light-curing layer defines a ring-shaped arrangement region that has at last one light-permeable slot. The sensor chip, the light-curing layer, the light-permeable layer, and the shielding layer are embedded in the package body that exposes at least part of the light-permeable layer.

Abstract: A sensor package structure and a manufacturing method thereof are provided. The sensor package structure includes a substrate, a sensor chip, and a cover. The sensor chip is disposed on and electrically coupled to the substrate. The cover is disposed on the substrate along an assembling direction, so that the sensor chip is arranged in a space surroundingly defined by the cover. The cover includes a light-permeable sheet, a light-shielding film, and an opaque frame. The light-shielding film is ring-shaped and is disposed on an inner surface of the light-permeable sheet, so as to divide the inner surface into a light-permeable region arranged inside of the light-shielding film and a formation region arranged outside of the light-shielding film The opaque frame is gaplessly formed on the formation region and is disposed on the substrate, and the opaque frame does not cover the light-shielding film.

Abstract: A sensor lens assembly having a non-soldering configuration is provided. The sensor lens assembly includes a circuit board, an optical module fixed on the circuit board, a sensor chip assembled to the circuit board, a plurality of wires electrically coupled to the sensor chip and the circuit board, and a cover that overcovers the sensor chip and the wires. The cover includes a light-permeable sheet and an opaque frame. The light-permeable sheet has a ring-shaped notch recessed in an edge of an inner surface thereof. The opaque frame is formed on the ring-shaped notch and is disposed on the circuit board, the light-permeable sheet and the sensor chip are spaced apart from each other, and the sensor chip and the wires are arranged in a space that is defined by the light-permeable sheet and the opaque frame.

Abstract: Provided herein is a method for the treatment and/or prophylaxis of a cancer associated with galectin-1. The method includes administering to a subject a pharmaceutical composition that mainly composed of ganoderic acid S (GAS) and ganoderic acid T (GAT). The method further includes administering to the subject another anti-cancer agent before, together with, or after the administration of the present pharmaceutical composition, so as to synergistically suppress the growth of the cancer.

Abstract: This disclosure relates to a light-emitting apparatus comprising a submount, a chip carrier formed on the submount, a light-emitting chip formed on the chip carrier, a reflecting cup formed on the submount and enclosing the light-emitting chip and the chip carrier, and a transparent encapsulating material for encapsulating the light-emitting chip.

Abstract: The method includes preparing a plurality of light-emitting units, one of the plurality of light-emitting units comprising an electrode, a light-emitting stack, and a protection layer with a first part covering the electrode and a second part which comprises a portion surrounding the electrode and covers the light-emitting stack; removing the portion without removing the first part; forming a wavelength conversion layer on the first part and the light-emitting stack not covered by the second part; and removing the first part to substantially expose the electrode.

Abstract: An optoelectronic semiconductor device includes a substrate, a semiconductor system having an active layer formed on the substrate and an electrode structure formed on the semiconductor system, wherein the layout of the electrode structure having at least a first conductivity type contact zone or a first conductivity type bonding pad, a second conductivity type bonding pad, a first conductivity type extension electrode, and a second conductivity type extension electrode wherein the first conductivity type extension electrode and the second conductivity type extension electrode have three-dimensional crossover, and partial of the first conductivity type extension electrode and the first conductivity type contact zone or the first conductivity type bonding pad are on the opposite sides of the active layer.

Abstract: A process for producing an antistatic yarn includes the steps of: (a) providing antistatic composite filaments having carbon black dispersed therein; (b) advancing the antistatic composite filaments to a first heating zone at a first advancing speed which ranges from 230 m/min to 330 m/min; (c) drawing the antistatic composite filaments from the first heating zone to a false twist zone at a second advancing speed such that a draw ratio of the second advancing speed to the first advancing speed ranges from 1.5 to 1.75, thereby obtaining false twisted filaments; and (d) heat-setting the false twisted filaments so as to obtain a permanent antistatic crimped yarn.

Abstract: This application provides a semiconductor light-emitting device and the manufacturing method thereof. The semiconductor light-emitting device comprises a semiconductor light-emitting structure and a thinned substrate. The semiconductor light-emitting structure comprises a plurality of semiconductor layers and a plurality of first channels, wherein a plurality of first channels has a predetermined depth that penetrating at least two layers of the plurality of semiconductor layers.

Abstract: This disclosure discloses a method of making a light-emitting device. The method comprises forming a plurality of light-emitting chips, wherein each of the light-emitting chips comprising an epitaxial structure and an electrode formed on the epitaxial structure; forming a protection layer on the electrode in each of the light-emitting chips; forming a plurality of light-emitting groups by collecting the light-emitting chips, wherein each of the light-emitting groups having substantially the same opto-electrical characteristics; forming a wavelength converted layer in each of the light-emitting groups to cover the epitaxial structure and the protection layer; and removing the wavelength converted layer on the protection layer to expose the protection layer.

Abstract: An optoelectronic element comprises a semiconductor stack layer comprising a first surface and a second surface; a first transparent conductive oxide layer formed on the first surface of the semiconductor stack layer, wherein the first transparent conductive oxide layer comprises at least an opening exposing the first surface of the semiconductor stack layer; and a second transparent conductive oxide layer filled into the opening and covering the first transparent conductive oxide layer; wherein the first transparent conductive oxide layer and the second transparent conductive oxide layer are comprised of a material selected from the group consisting of indium tin oxide (ITO), indium oxide (InO), tin oxide (SnO), cadmium tin oxide (CTO), aluminum tin oxide (ATO), aluminum zinc oxide (AZO), and zinc oxide (ZnO), and the first transparent conductive oxide layer and the second transparent conductive oxide layer have the same constituent material with different refractive indexes.

Abstract: A method for processing social network messages includes the following steps. Receive a specified web page request signal through a network from a client device. Acquire identification information of a first user account. Embed the identification information into an address of the specified web page to generate a first sharing linking address corresponding to the first user account. Post a sharing message on the personal-message-posting web page. Record operating information and corresponding operating time for at least one second user account when linking to the first sharing linking address. When the operation is sharing operation, embed identification information corresponding to the at least one second user account into the first sharing linking address, generate a second sharing linking address corresponding to the at least one second user account, and post the sharing message on the personal-message-posting web page of the at least one second user account.

Abstract: This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.

Abstract: This disclosure relates to a light-emitting apparatus comprising a submount, a chip carrier formed on the submount, a light-emitting chip formed on the chip carrier, a reflecting cup formed on the submount and enclosing the light-emitting chip and the chip carrier, and a transparent encapsulating material for encapsulating the light-emitting chip.

Abstract: Disclosed is a light-emitting device comprising: a carrier; a light-emitting element disposed on the carrier; a first light guide layer covering the light-emitting element; a second light guide layer covering the first light guide layer; a low refractive index layer between the first light guide layer and the second light guide layer to reflect the light from the second light guide layer; and a wavelength conversion layer covering the second light guide layer; wherein the low refractive index layer has a refractive index smaller than one of the refractive indices of first light guide layer and the second light guide layer.

Abstract: A light-spreading device is disclosed, wherein the light-spreading structure is formed with a wing-shaped protrusion part extending in a first direction and protruding in a different, second direction, such that light enters a surface on one side of the light-spreading structure, opposite to a recess located on another side of the light-spreading structure. The light-spreading structure also has an uneven surface associated with at least one of the wing-shaped protrusion part, the light-entering surface, and the recess.

Abstract: A light-emitting apparatus includes a submount, a chip carrier formed on the submount, and a light-emitting chip formed on the chip carrier. The light-emitting apparatus also includes a reflecting cup formed on the submount and enclosing the light-emitting chip and the chip carrier, and a transparent encapsulating material for encapsulating the light-emitting chip.

Abstract: An optoelectronic semiconductor device including: a substrate; a semiconductor system having an active layer formed on the substrate; and an electrode structure formed on the semiconductor system, wherein the electrode structure includes: a first conductivity type bonding pad; a second conductivity type bonding pad; a first conductivity type extension electrode; and a second conductivity type extension electrode, wherein the first conductivity type extension electrode and the second conductivity type extension electrode form a three-dimensional crossover; wherein the first conductivity type extension electrode and the second conductivity type extension electrode are on the opposite sides of the active layer.

Abstract: This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.