Abstract: A light-emitting semiconductor apparatus includes a light-emitting structure, a reflective structure, and a carrier. The light-emitting structure includes a first type semiconductor layer, a second type semiconductor layer, and a light-emitting layer positioned between the first type semiconductor layer and the second type semiconductor layer. The reflective structure has a first transparent conductive layer, a first patterned reflective layer, a second transparent conductive layer, and a second patterned reflective layer. The first patterned reflective layer is disposed between the first transparent conductive layer and the second transparent conductive layer, and has an opening for physically connecting the first transparent conductive layer and the second transparent conductive layer. The second transparent conductive layer is disposed between the first patterned reflective layer and the second patterned reflective layer.

Abstract: A semiconductor light-emitting element assembly, comprising a composite substrate, a circuit layout carrier, a connecting structure, a recess, and a semiconductor light-emitting element, is disclosed. The connecting structure is used for bonding the composite substrate with the circuit layout carrier. The recess is formed by the circuit layout carrier and extends toward the composite substrate. The semiconductor light-emitting element is deposited in the recess and electrically connected to the circuit layout carrier.

Abstract: A light-emitting device and manufacturing method thereof are disclosed. The light-emitting device includes a substrate, a semiconductor light-emitting structure, a filter layer, and a fluorescent conversion layer. The method comprises forming a semiconductor light-emitting structure over a substrate, forming a filter layer over the semiconductor light-emitting structure, and forming a fluorescent conversion layer over the filter layer.

Abstract: An optoelectronic semiconductor device includes a substrate, a semiconductor system having an active layer formed on the substrate and an electrode structure formed on the semiconductor system, wherein the layout of the electrode structure having at least a first conductivity type contact zone or a first conductivity type bonding pad, a second conductivity type bonding pad, a first conductivity type extension electrode, and a second conductivity type extension electrode wherein the first conductivity type extension electrode and the second conductivity type extension electrode have three-dimensional crossover, and partial of the first conductivity type extension electrode and the first conductivity type contact zone or the first conductivity type bonding pad are on the opposite sides of the active layer.

Abstract: A liquid crystal display having a backlight module, liquid crystal layer and a color filter layer is disclosed in the invention. An ultraviolet unit for emitting ultraviolet is disposed in the backlight module. The color filter layer is composed of a purity of pixels, and at least one of the purity of pixels is filled with a wavelength-converting material. The wavelength-converting material can convert ultraviolet into green light.

Abstract: This invention discloses a wavelength converting material. The wavelength converting material comprises a metal haloaluminate compound phosphor with a chemical formula Mw-pAlyOzXq:Rp, wherein M is at least one element selected from the group of Be, Mg, Ca, Sr, Ba and Zn; X is at least one element selected from the group of F, Cl, Br, and I; R is one or more elements selected from the group of the transition metals and at least one element selected from the lanthanide series. Because the emitting wavelength of the metal haloaluminate compound phosphor is 550˜650 nm which is from the green to the red light spectrum, the white light mixed by the converted light of the metal haloaluminate phosphor and the blue light has better color rendering index. Besides, this invention also discloses the optoelectronic devices comprising the metal haloaluminate compound phosphor.

Abstract: An embodiment of the invention discloses a wavelength converting system capable of emitting a second electromagnetic radiation having a second wavelength in response to a first electromagnetic radiation having a first wavelength, wherein an energy level of the first electromagnetic radiation is higher than that of the second electromagnetic level, and a positive correlation is between the first wavelength and the second wavelength.

Abstract: The present invention discloses a semiconductor light-emitting device including a semiconductor light-emitting element, a first attaching layer and a wavelength conversion structure. The primary light emitted from the semiconductor light-emitting element enters the wavelength conversion structure to generate a converted light, whose wavelength is different form that of the primary light. In addition, the present invention also provides the method for forming the same.

Abstract: A light-emitting device includes an LED chip emitting a primary light, and a phosphor deposited on the LED chip for absorbing the primary light to excite a secondary light, wherein the wavelength of the primary light is shorter than 430 nm and the LED chip is driven by current density greater than 200 mA/cm2. The wavelength-converting light-emitting device has a high light efficiency and a stable color temperature, wherein LED chip is diced from a wafer made by means of a phosphor-on-chip process.

Abstract: This disclosure relates to a light-emitting apparatus comprising a submount, a chip carrier formed on the submount, a light-emitting chip formed on the chip carrier, a reflecting cup formed on the submount and enclosing the light-emitting chip and the chip carrier, and a transparent encapsulating material for encapsulating the light-emitting chip.

Abstract: A light-emitting device and manufacturing method thereof are disclosed. The light-emitting device includes a substrate, a semiconductor light-emitting structure, a filter layer, and a fluorescent conversion layer. The method comprises forming a semiconductor light-emitting structure over a substrate, forming a filter layer over the semiconductor light-emitting structure, and forming a fluorescent conversion layer over the filter layer.

Abstract: A tube type light emitting diode light source including a light source generator, a light guide and a diffuser is provided. The light source generator includes LEDs arranging in a line. The light guide has a grooved light incident surface and a grooved light-guiding surface. The grooved light incident surface encompasses the LEDs, and the grooved light-guiding surface is adapted for changing the propagating direction of an incident light. The diffuser covers the light guide.

Abstract: A method for manufacturing a white light source provides an LED light source and a semiconductor-type phosphor with (Zn, Cd)S being the host with foreign ions added thereto as luminescence centers. The LED light source emits light ranging from 495 nm about (blue-green light) to about 340 nm (ultra-violet).

Abstract: The subject invention relates to yttrium aluminum garnet fluorescent powders with formula (Y3-x-yZxEuy)Al5O12 or (Y3ZxEuy)Al5O12, wherein 0<x?0.8, 0<y?1.5, and Z is selected from a group consisting of rare earth metals other than europium (Eu). The subject invention also relates to a pink light-emitting device, which comprises a light-emitting diodes as a luminescent element and a fluorescent body containing yttrium aluminum garnet fluorescent powders, wherein the diode emits a light with a wavelength ranging from 370 to 410 nm, which then excites the yttrium aluminum garnet fluorescent powders in the fluorescent body to emit another light with a wavelength ranging from 585 nm to 700 nm, so the two lights combine to produce a pink light. The subject invention also relates to the preparation of the yttrium aluminum garnet fluorescent powders.

Abstract: A tube type light emitting diode light source including a light source generator, a light guide and a diffuser is provided. The light source generator includes LEDs arranging in a line. The light guide has a grooved light incident surface and a grooved light-guiding surface. The grooved light incident surface encompasses the LEDs, and the grooved light-guiding surface is adapted for changing the propagating direction of an incident light. The diffuser covers the light guide.

Abstract: A method for manufacturing a white light source includes steps of providing an ultra-violet light as a radiation source, preparing three kinds of first phosphors each receiving the ultra-violet light and emitting the light of red, green and blue, respectively, and preparing at least one additional second phosphor to modify a spectral property of the light emitted by the three first phosphors in order to improve the brightness and color rendering property of the white light source. Moreover, at least one phosphor with the fluorescent property is used as the above second phosphor powder to obtain a color-changeable light source.

Abstract: A semiconductor light-emitting element assembly, comprising a composite substrate, a circuit layout carrier, a connecting structure, a recess, and a semiconductor light-emitting element, is disclosed. The connecting structure is used for bonding the composite substrate with the circuit layout carrier. The recess is formed by the circuit layout carrier and extends toward the composite substrate. The semiconductor light-emitting element is deposited in the recess and electrically connected to the circuit layout carrier.

Abstract: A liquid crystal display having a backlight module, liquid crystal layer and a color filter layer is disclosed in the invention. An ultraviolet unit for emitting ultraviolet is disposed in the backlight module. The color filter layer is composed of a purity of pixels, and at least one of the purity of pixels is filled with a wavelength-converting material. The wavelength-converting material can convert ultraviolet into green light.

Abstract: A white light-emitting device comprising a blue-violet or blue LED and a phosphor material capable of emitting a yellow-green to orange-yellow light upon excitation by the light emitted by the LED. The light from the LED and the phosphor material are mixed in an appropriate ratio to produce a white light. The phosphor material has a general formula (YxMyCez)Al5O12, where x+y=3, x, y?0, 0.5>z>0, and M is selected from the group consisting of Tb, Lu, and Yb, with (YxMy)Al5O12 serving as a host and Ce as an activator. By changing the composition of the metal elements in the host, the crystal field is modulated to thereby alter the energy level of the excited state to which the activator is transferred upon irradiation by a specific wavelength of light, leading to the change in the emitting wavelength of the phosphor material.

Abstract: A yellow phosphor material has a host with a formula (TbxMyCez)Al5O12, wherein x+y+z=3 , 3>x>0 and y?0 and a Ce activator. M is selected from the group consisting of Sc, Y, Dy, Ho, Er, Tm, Yb, and Lu. By changing the diameter of metal ions, the crystal field thereof may be modulated to thereby alter the energy level of the excited state to which the activator is transferred upon irradiation by a specific wavelength of light. The phosphor can be used with a blue LED to form a white light source.