Patents by Inventor Chien-Yuan Wang
Chien-Yuan Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8724052Abstract: A light-spreading device is disclosed, wherein the light-spreading structure is formed with a wing-shaped protrusion part extending in a first direction and protruding in a different, second direction, such that light enters a surface on one side of the light-spreading structure, opposite to a recess located on another side of the light-spreading structure. The light-spreading structure also has an uneven surface associated with at least one of the wing-shaped protrusion part, the light-entering surface, and the recess.Type: GrantFiled: November 7, 2011Date of Patent: May 13, 2014Assignee: Epistar CorporationInventors: Min-Hsun Hsieh, Chien-Yuan Wang
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Patent number: 8692270Abstract: A light-emitting apparatus includes a submount, a chip carrier formed on the submount, and a light-emitting chip formed on the chip carrier. The light-emitting apparatus also includes a reflecting cup formed on the submount and enclosing the light-emitting chip and the chip carrier, and a transparent encapsulating material for encapsulating the light-emitting chip.Type: GrantFiled: July 23, 2007Date of Patent: April 8, 2014Assignee: Epistar CorporationInventors: Min-Hsun Hsieh, Ta-Cheng Hsu, ML Tsai, Chih-Chiang Lu, Chien-Yuan Wang, Yen-Wen Chen, Ya-Ju Lee
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Patent number: 8692280Abstract: An optoelectronic semiconductor device including: a substrate; a semiconductor system having an active layer formed on the substrate; and an electrode structure formed on the semiconductor system, wherein the electrode structure includes: a first conductivity type bonding pad; a second conductivity type bonding pad; a first conductivity type extension electrode; and a second conductivity type extension electrode, wherein the first conductivity type extension electrode and the second conductivity type extension electrode form a three-dimensional crossover; wherein the first conductivity type extension electrode and the second conductivity type extension electrode are on the opposite sides of the active layer.Type: GrantFiled: August 11, 2011Date of Patent: April 8, 2014Assignee: Epistar CorporationInventors: Chien-Yuan Wang, Shih-Chiang Yeh
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Publication number: 20140048833Abstract: This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.Type: ApplicationFiled: October 24, 2013Publication date: February 20, 2014Applicant: Epistar CorporationInventors: Chih-Chiang LU, Shu-Ting HSU, Yen-Wen CHEN, Chien-Yuan WANG, Ru-Shi LIU, Min-Hsun HSIEH
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Publication number: 20140042470Abstract: This disclosure discloses a method of making a light-emitting device. The method comprises forming a plurality of light-emitting chips, each of the light-emitting chips comprising an epitaxial structure and an electrode formed on the epitaxial structure; forming a protection layer on the electrode in each of the light-emitting chips; forming a plurality of light-emitting groups by collecting the light-emitting chips, wherein each of the light-emitting groups having substantially the same opto-electrical characteristics; forming a wavelength converted layer in each of the light-emitting groups to cover the epitaxial structure and the protection layer; and removing the wavelength converted layer on the protection layer to expose the protection layer.Type: ApplicationFiled: August 9, 2012Publication date: February 13, 2014Applicant: Epistar CorporationInventors: Ming-Chi Hsu, Chih-Ming Wang, Chien-Yuan Wang
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Publication number: 20140034988Abstract: Disclosed is a light-emitting device comprising: a carrier; a light-emitting element disposed on the carrier; a first light guide layer covering the light-emitting element; a second light guide layer covering the first light guide layer; a low refractive index layer between the first light guide layer and the second light guide layer to reflect the light from the second light guide layer; and a wavelength conversion layer covering the second light guide layer; wherein the low refractive index layer has a refractive index smaller than one of the refractive indices of first light guide layer and the second light guide layer.Type: ApplicationFiled: October 7, 2013Publication date: February 6, 2014Applicant: Epistar CorporationInventors: Min-Hsun HSIEH, Chien-Yuan WANG, Tsung-Xian LEE, Chih-Ming WANG, Ming-Chi HSU, Han-Min WU
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Publication number: 20130313750Abstract: A process for producing an antistatic yarn includes the steps of: (a) providing antistatic composite filaments having carbon black dispersed therein; (b) advancing the antistatic composite filaments to a first heating zone at a first advancing speed which ranges from 230 m/min to 330 m/min; (c) drawing the antistatic composite filaments from the first heating zone to a false twist zone at a second advancing speed such that a draw ratio of the second advancing speed to the first advancing speed ranges from 1.5 to 1.75, thereby obtaining false twisted filaments; and (d) heat-setting the false twisted filaments so as to obtain a permanent antistatic crimped yarn.Type: ApplicationFiled: January 24, 2013Publication date: November 28, 2013Applicant: Acelon Chemicals & Fiber CoporationInventors: Wen-Tung Chou, Ming-Yi Lai, Kun-Shan Huang, Hsiao-Chi Tsai, Chien-Yuan Wang
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Patent number: 8569083Abstract: This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.Type: GrantFiled: February 24, 2010Date of Patent: October 29, 2013Assignee: Epistar CorporationInventors: Chih-Chiang Lu, Shu-Ting Hsu, Yen-Wen Chen, Chien-Yuan Wang, Ru-Shi Liu, Min-Hsun Hsieh
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Patent number: 8552454Abstract: Disclosed is a light-emitting device comprising: a carrier; a light-emitting element disposed on the carrier; a first light guide layer covering the light-emitting element, and disposed on the carrier; a wavelength conversion and light guide layer covering the first light guide layer and the light-emitting element, and disposed on the carrier; and a low refractive index layer disposed between the first light guide layer and the wavelength conversion and light guide layer; wherein the first light guide layer comprises a gradient refractive index, the wavelength conversion and light guide layer comprises a dome shape structure and is used to convert a wavelength of light emitted from the light-emitting element and transmit light, and the low refractive index layer is used to reflect light from the wavelength conversion and light guide layer.Type: GrantFiled: November 29, 2011Date of Patent: October 8, 2013Assignee: Epistar CorporationInventors: Min-Hsun Hsieh, Chien-Yuan Wang, Tsung-Xian Lee, Chih-Ming Wang, Ming-Chi Hsu, Han-Min Wu
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Patent number: 8486729Abstract: A semiconductor light-emitting device having a thinned structure comprises a thinned structure formed between a semiconductor light-emitting structure and a carrier. The manufacturing method comprises the steps of forming a semiconductor light-emitting structure above a substrate; attaching the semiconductor light-emitting structure to a support; thinning the substrate to form a thinned structure; forming or attaching a carrier to the thinned substrate; and removing the support.Type: GrantFiled: May 23, 2012Date of Patent: July 16, 2013Assignee: Epistar CorporationInventors: Min-Hsun Hsieh, Chih-Chiang Lu, Chien-Yuan Wang, Yen-Wen Chen, Jui-Hung Yeh, Shih-Chin Hung, Yu-Wei Tu, Chun-Yi Wu, Wei-Chih Peng
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Publication number: 20130062561Abstract: A phosphor is represented by below formula: AaBbCcDdEe:Mm wherein, M represents at least one activator selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb and combinations thereof; A represents at least one element selected from Ca2+, Sr2+, Ba2+ and combinations thereof; B represents C4+, Si4+ or Ge4+; C represents B3+, Al3+ or Ga3+; D and E each independently represent at least one element selected from N, O, F and combinations thereof; m+a=2; 0.00001?m?0.1; 0.5?b+c?8; and 0.5?d+e?10. The phosphor has a color render index of greater than 50 and is suitable to be applied in a white LED to improve the color rendering property of the white light. A method of preparing the phosphor is also provided.Type: ApplicationFiled: September 9, 2011Publication date: March 14, 2013Applicant: EPISTAR CORPORATIONInventors: Wei-Ting Chen, Ru-Shi Liu, Chien-Yuan Wang
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Publication number: 20130056772Abstract: This application discloses a light-emitting device with narrow dominant wavelength distribution and a method of making the same. The light-emitting device with narrow dominant wavelength distribution at least includes a substrate, a plurality of light-emitting stacked layers on the substrate, and a plurality of wavelength transforming layers on the light-emitting stacked layers, wherein the light-emitting stacked layer emits a first light with a first dominant wavelength variation; the wavelength transforming layer absorbs the first light and converts the first light into the second light with a second dominant wavelength variation; and the first dominant wavelength variation is larger than the second dominant wavelength variation.Type: ApplicationFiled: February 24, 2010Publication date: March 7, 2013Inventors: Chih-Chiang LU, Shu-Ting Hsu, Yen-Wen Chen, Chien-Yuan Wang, Ru-Shi Liu, Min-Hsun Hsieh
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Patent number: 8368094Abstract: A optoelectronic device comprises a semiconductor stack layer; a first transparent conductive oxide (abbreviate as “TCO” hereinafter) layer located on the semiconductor stack layer, wherein the first TCO layer has at least one opening; and a second TCO layer covering the first TCO layer, wherein the second TCO layer is filled into the opening of the first TCO layer and contacted with the semiconductor stack layer, and one of the first TCO layer and the second TCO layer forms an ohmic contact with the semiconductor stack layer.Type: GrantFiled: June 11, 2010Date of Patent: February 5, 2013Assignee: Epistar CorporationInventors: Min-Hsun Hsieh, Chien-Yuan Wang, Jin-Ywan Lin, Chiu-Lin Yao
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Publication number: 20120326185Abstract: A light emitting device including a carrying element having two electric conductors connectable to a power source, a light emitting element disposed on the carrying element and electrically connected to the two electric conductors, and at least one correction element electrically connected to the light emitting element, wherein the light emitting element is adapted to provide a light source upon connection of the two electric conductors with the power source, and the at least one correction element allows the light emitting element to have functions of temperature compensation, voltage correction, or surge absorption.Type: ApplicationFiled: June 22, 2012Publication date: December 27, 2012Applicant: EPISTAR CORPORATIONInventors: Ming-Te LIN, Hsi-Hsuan YEN, Ming-Yao LIN, Wen-Yung Yeh, Chia-Chang KUO, Sheng Pan HUANG, Min Hsun HSIEH, Chien Yuan WANG
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Patent number: 8299483Abstract: A light-emitting semiconductor apparatus includes a light-emitting structure, a reflective structure, and a carrier. The light-emitting structure includes a first type semiconductor layer, a second type semiconductor layer, and a light-emitting layer positioned between the first type semiconductor layer and the second type semiconductor layer. The reflective structure has a first transparent conductive layer, a first patterned reflective layer, a second transparent conductive layer, and a second patterned reflective layer. The first patterned reflective layer is disposed between the first transparent conductive layer and the second transparent conductive layer, and has an opening for physically connecting the first transparent conductive layer and the second transparent conductive layer. The second transparent conductive layer is disposed between the first patterned reflective layer and the second patterned reflective layer.Type: GrantFiled: January 5, 2010Date of Patent: October 30, 2012Assignee: Epistar CorporationInventors: Chih-Chiang Lu, Wei-Chih Peng, Chien-Yuan Wang, Wei-Yo Chen, Shiau-Huei San, Min-Hsun Hsieh
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Patent number: 8274156Abstract: An optoelectronic semiconductor device includes a substrate, a semiconductor system having an active layer formed on the substrate and an electrode structure formed on the semiconductor system, wherein the layout of the electrode structure having at least a first conductivity type contact zone or a first conductivity type bonding pad, a second conductivity type bonding pad, a first conductivity type extension electrode, and a second conductivity type extension electrode wherein the first conductivity type extension electrode and the second conductivity type extension electrode have three-dimensional crossover, and partial of the first conductivity type extension electrode and the first conductivity type contact zone or the first conductivity type bonding pad are on the opposite sides of the active layer.Type: GrantFiled: November 25, 2009Date of Patent: September 25, 2012Assignee: Epistar CorporationInventors: Wei-Yo Chen, Yen-Wen Chen, Chien-Yuan Wang, Min-Hsun Hsieh, Tzer-Perng Chen
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Publication number: 20120231560Abstract: A semiconductor light-emitting device having a thinned structure comprises a thinned structure formed between a semiconductor light-emitting structure and a carrier. The manufacturing method comprises the steps of forming a semiconductor light-emitting structure above a substrate; attaching the semiconductor light-emitting structure to a support; thinning the substrate to form a thinned structure; forming or attaching a carrier to the thinned substrate; and removing the support.Type: ApplicationFiled: May 23, 2012Publication date: September 13, 2012Inventors: Min-Hsun Hsieh, Chih-Chiang Lu, Chien-Yuan Wang, Yen-Wen Chen, Jui-Hung Yeh, Shih-Chin Hung, Yu-Wei Tu, Chun-Yi Wu, Wei-Chih Peng
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Patent number: 8232563Abstract: A light-emitting device includes an LED chip emitting a primary light, and a phosphor deposited on the LED chip for absorbing the primary light to excite a secondary light, wherein the wavelength of the primary light is shorter than 430 nm and the LED chip is driven by current density greater than 200 mA/cm2. The wavelength-converting light-emitting device has a high light efficiency and a stable color temperature, wherein LED chip is diced from a wafer made by means of a phosphor-on-chip process.Type: GrantFiled: June 14, 2007Date of Patent: July 31, 2012Assignee: Epistar CorporationInventors: Chien-Yuan Wang, Min-Hsun Hsieh, Yu-Jiun Shen
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Patent number: 8210699Abstract: An embodiment of the invention discloses a wavelength converting system. The wavelength converting system comprises: a wavelength converter having a first area and a second area; a first light source disposed under the first area and inducing a first mixed light being visible above the first area; a second light source disposed under the second area and inducing a second mixed light being visible above the second area; and a carrier supporting the first light source and the second light source. The first light source and the second light source have a dominant wavelength difference of 1 nm˜20 nm, and the first mixed light and the second mixed light have a color temperature difference less than 100K.Type: GrantFiled: August 1, 2011Date of Patent: July 3, 2012Assignee: Epistar CorporationInventors: Chien-Yuan Wang, Min-Hsun Hsieh, Chih-Chiang Lu
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Patent number: 8207539Abstract: A semiconductor light-emitting device having a thinned structure comprises a thinned structure formed between a semiconductor light-emitting structure and a carrier. The manufacturing method comprises the steps of forming a semiconductor light-emitting structure above a substrate; attaching the semiconductor light-emitting structure to a support; thinning the substrate to form a thinned structure; forming or attaching a carrier to the thinned substrate; and removing the support.Type: GrantFiled: June 9, 2009Date of Patent: June 26, 2012Assignee: Epistar CorporationInventors: Min-Hsun Hsieh, Chih-Chiang Lu, Chien-Yuan Wang, Yen-Wen Chen, Jui-Hung Yeh, Shih-Chin Hung, Yu-Wei Tu, Chun-Yi Wu, Wei-Chih Peng