Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a field plate, a gate electrode, and a first dielectric layer. The substrate has a top surface. The substrate includes a first drift region with a first conductivity type extending from the top surface of the substrate into the substrate, and includes a second drill region with the first conductivity type extending from the top surface of the substrate into the substrate and adjacent to the first drift region. The field plate is over the substrate. The gate electrode has a first portion and a second portion, wherein the first portion of the gate electrode is located over the field plate. The first dielectric layer is between the substrate and the field plate. The first portion of the gate electrode is overlapping with a boundary of the first drift region and the second drift region in the substrate.

Abstract: A control device of an internal speed change device of a wheel hub for clutching operation includes a rod; a lever installed on the rod; the lever being connected to a controlling claw sliding block; an electric sliding block installed on a lever sleeve; the lever sleeve serving to receive a back end of the lever; an electric bushing located at an outer side of the lever sleeve; a controlling ring located at an outer side of the electric bushing; and wherein force of attraction or repulsion between the controlling ring and the electric sliding block drives the electric sliding block to rotate or move axially so as to drive the lever to move forwards or backwards axially; and moving of the lever drives the controlling claw sliding block to control clutching of the internal speed change device.

Abstract: A cooling system includes a housing including a base portion with sides and a bottom surface that define a cavity and a cover portion to enclose the base portion and including cooling members attached thereto. A shield is arranged in the cavity. A vertical member is arranged below the shield to define a first fluid chamber between one side of the vertical member and one side of the base portion and a second fluid chamber between an opposite side of the vertical member and another side of the base portion. The electronic components are arranged in the second fluid chamber. Cooling fluid is arranged in the cavity and has a fluid level below at least a portion of the shield. The housing is mounted at an inclined angle relative to horizontal or the housing is mounted parallel to horizontal and the shield is mounted at the inclined angle.

Abstract: A control device of an internal speed change device of a wheel hub for clutching operation includes a rod; a lever installed on the rod; the lever being connected to a controlling claw sliding block; an electric sliding block installed on a lever sleeve; the lever sleeve serving to receive a back end of the lever; an electric bushing located at an outer side of the lever sleeve; a controlling ring located at an outer side of the electric bushing; and wherein force of attraction or repulsion between the controlling ring and the electric sliding block drives the electric sliding block to rotate or move axially so as to drive the lever to move forwards or backwards axially; and moving of the lever drives the controlling claw sliding block to control clutching of the internal speed change device.

Abstract: A recycling apparatus for a solar cell module includes a platform for supporting and positioning the solar cell module, and at least one milling device disposed on the platform and having a milling member configured to contact a back plate of the solar cell module, and a casing defining a chip-receiving space and having an air inlet and a suction port communicating with the chip-receiving space. A drive device is connected to the at least one milling device for driving the at least one milling device to move around and mill the solar cell module through the milling member.

Abstract: A control device of an internal speed change device of a wheel hub for clutching operation includes a rod; a lever installed on the rod; the lever being connected to a controlling claw sliding block; an electric sliding block installed on a lever sleeve; the lever sleeve serving to receive a back end of the lever; an electric bushing located at an outer side of the lever sleeve; a controlling ring located at an outer side of the electric bushing; and wherein force of attraction or repulsion between the controlling ring and the electric sliding block drives the electric sliding block to rotate or move axially so as to drive the lever to move forwards or backwards axially; and moving of the lever drives the controlling claw sliding block to control clutching of the internal speed change device.

Abstract: A package structure and a method of forming the same are provided. The package structure includes a first die, a second die, a first encapsulant, and a buffer layer. The first die and the second die are disposed side by side. The first encapsulant encapsulates the first die and the second die. The second die includes a die stack encapsulated by a second encapsulant encapsulating a die stack. The buffer layer is disposed between the first encapsulant and the second encapsulant and covers at least a sidewall of the second die and disposed between the first encapsulant and the second encapsulant. The buffer layer has a Young's modulus less than a Young's modulus of the first encapsulant and a Young's modulus of the second encapsulant.

Abstract: Piston mode Lamb wave resonators are disclosed. A piston mode Lamb wave resonator can include a piezoelectric layer, such as an aluminum nitride layer, and an interdigital transducer on the piezoelectric layer. The piston mode Lamb wave resonator has an active region and a border region, in which the border region has a velocity with a lower magnitude than a velocity of the active region. The border region can suppress a transverse mode.

Abstract: The present invention features interferon-free therapies for the treatment of HCV. Preferably, the treatment is over a shorter duration of treatment, such as no more than 12 weeks. In one aspect, the treatment comprises administering at least two direct acting antiviral agents to a subject with HCV infection, wherein the treatment lasts for 12 weeks and does not include administration of either interferon or ribavirin, and said at least two direct acting antiviral agents comprise (a) Compound 1 or a pharmaceutically acceptable salt thereof and (b) Compound 2 or a pharmaceutically acceptable salt thereof.

Abstract: A bracket and a terminal equipment are provided. The bracket is provided for a terminal device to be installed thereon and includes a bracket body, two installing elements, and at least one holding element. The two installing elements respectively protrude outward from two sides of the bracket body, and each of the two installing elements includes an engaging portion. The two installing elements are configured to be inserted into the terminal device so the terminal device is installed on the bracket, and each of the engaging portions is configured such that each of the installing elements is engaged with and retained in the terminal device. The holding element protrudes outward from the bracket body and is configured to be inserted into a loading hole of the terminal device.

Abstract: A powered industrial truck includes a lateral movement assembly including four sliding members and four pivotal members both on a wheeled carriage, four links having a first end pivotably secured to the sliding member and a second end pivotably secured to either end of the pivotal member, a motor shaft having two ends pivotably secured to the pivotal members respectively, a first electric motor on one frame member, and four mounts attached to the sliding members respectively; two lift assemblies including a second electric motor, a shaft having two ends rotatably secured to the sliding members respectively, two gear trains at the ends of the shaft respectively, a first gear connected to the second electric motor, a second gear on the shaft, and a first roller chain on the first and second gears; two electric attachments on the platform and being laterally moveable, each attachment. The mount has rollers.

Abstract: A semiconductor structure includes a substrate, a conductive via and a first insulation layer. The conductive via is through the substrate. The first insulation layer is between the substrate and the conductive via. A first surface of the first insulation layer facing the substrate and a second surface of the first insulation layer facing the conductive via are extended along different directions.

Abstract: A wireless implant and associated system for motor function recovery after spinal cord injury, and more particularly a multi-channel wireless implant with small package size. The wireless implant can further be used in various medical applications, such as retinal prostheses, gastrointestinal implant, vagus nerve stimulation, and cortical neuromodulation. The system also includes a method and its implementation to acquire the impedance model of the electrode-tissue interface of the implant.

Abstract: Methods and devices of having an enclosure structure formed in a multi-layer interconnect and a through-silicon-via (TSV) extending through the enclosure structure. In some implementations, a protection layer is formed between the enclosure structure and the TSV.

Abstract: A semiconductor structure includes a substrate, a channel region, a gate structure, and source/drain regions. The channel region is over the substrate. The gate structure is over the channel region, and includes a high-k dielectric layer, a tungsten layer over the high-k dielectric layer, and a fluorine-containing work function layer over the tungsten layer. The source/drain regions are at opposite sides of the channel region.

Abstract: A combinable nucleic acid pre-processing apparatus includes a sample transfer chamber transferring a sample from a sampling tube to a nucleic acid extraction kit, a nucleic acid extraction chamber performing a nucleic acid extraction of the sample in the nucleic acid extraction kit for obtaining a nucleic acid extract, an assay setup chamber preparing reagents and transferring reagents and the nucleic acid extract to an assay plate, and at least two bridging modules respectively disposed between the sample transfer chamber and the nucleic acid extraction chamber and between the nucleic acid extraction chamber and the assay setup chamber. The sample transfer chamber, the nucleic acid extraction chamber and the assay setup chamber are separated and operated independently. Three chambers are connected through the bridging modules, so the nucleic acid extraction kit can be sequentially moved in the sample transfer chamber, the nucleic acid extraction chamber and the assay setup chamber.

Abstract: Some embodiments of the present disclosure relate to an integrated chip including an extended via that spans a combined height of a wire and a via and that has a smaller footprint than the wire. The extended via may replace a wire and an adjoining via at locations where the sizing and the spacing of the wire are reaching lower limits. Because the extended via has a smaller footprint than the wire, replacing the wire and the adjoining via with the extended via relaxes spacing and allows the size of the pixel to be further reduced. The extended via finds application for capacitor arrays used for pixel circuits.

Abstract: A base material is provided. A first patterned circuit layer and a second patterned circuit layer are formed on a first surface and a second surface of the base material. A first insulation layer and a metal reflection layer are provided on the first patterned circuit layer and a portion of the first surface exposed by the first patterned circuit layer, wherein the metal reflection layer covers the first insulation layer, and a reflectance of the metal reflection layer is substantially greater than or equal to 85%, there is no conductive material between the first patterned circuit layer and the metal reflection layer. A first ink layer is formed on the first insulation layer before the metal reflection layer is formed.

Abstract: A photo-detecting device includes a first semiconductor layer with a first dopant, a light-absorbing layer, a second semiconductor layer, and a semiconductor contact layer. The second semiconductor layer is located on the first semiconductor layer and has a first region and a second region, the light absorbing layer is located between the first semiconductor layer and the second semiconductor layer and has a third region and a fourth region, the semiconductor contact layer contacts the first region. The first region includes a second dopant and a third dopant, the second region includes second dopant, and the third region includes third dopant. The semiconductor contact layer has a first thickness greater than 50 ? and smaller than 1000 ?.

Abstract: A memory array and an operation method of the memory array are provided. The memory array includes first and second ferroelectric memory devices formed along a gate electrode, a channel layer and a ferroelectric layer between the gate electrode and the channel layer. The ferroelectric memory devices include: a common source/drain electrode and two respective source/drain electrodes, separately in contact with a side of the channel layer opposite to the ferroelectric layer, wherein the common source/drain electrode is disposed between the respective source/drain electrodes; and first and second auxiliary gates, capacitively coupled to the channel layer, wherein the first auxiliary gate is located between the common source/drain electrode and one of the respective source/drain electrodes, and the second auxiliary gate is located between the common source/drain electrode and the other respective source/drain electrode.