Abstract: A structure includes a first substrate and a second substrate bonded to the first substrate. The first substrate comprises a first connector, in which the first connector comprises a first metal layer and a second metal layer over the first metal layer. The second substrate comprises a second connector, in which the second connector comprises a third metal layer, and a fourth metal layer over the third metal layer, wherein the second metal layer of the first connector is in contact with the fourth metal layer of the second connector, and wherein one of the second metal layer and the fourth metal layer includes a nano-twinned structure with (111) orientation.

Abstract: A method includes forming a first connector and a second connector over a first wafer and a second wafer, respectively, in which each of the first and second connectors are formed by forming an opening in a dielectric layer; depositing a first metal layer in the opening, in which the first metal layer has a nano-twinned structure with (111) orientation; and depositing a second metal layer over the first metal layer, the second metal layer and the first metal layer being made of different materials, in which the second metal layer has a nano-twinned structure with (111) orientation; attaching the first wafer to the second wafer, such that that the second metal layer of the first connector on the first wafer is in contact with the second metal layer of the second connector on the second wafer; and performing a thermo-compression process to bond the first and second wafers.

Abstract: A method includes forming a first conductive feature over a first semiconductor structure; forming a first dielectric layer over the first conductive feature and the first semiconductor structure; removing a portion of the first dielectric layer to expose a top surface of the first conductive feature; forming a second conductive feature over a second semiconductor structure, wherein the first and second conductive features comprise nanotwinned copper; forming a second dielectric layer over the second conductive feature and the second semiconductor structure, wherein the second dielectric layer comprises a same material as the first dielectric layer; removing a portion of the second dielectric layer to expose a top surface of the second conductive feature; and performing a hybrid bonding process to bond the first dielectric layer to the second dielectric layer and bond the first conductive feature to the second conductive feature.

Abstract: A method includes forming a first conductive feature and a second conductive feature over a first substrate, wherein the first and second conductive features comprise nano-twinned copper; and depositing a first metal cap layer over the first conductive feature and a second metal cap layer over the second conductive feature, wherein the first metal cap layer is spaced apart from the second metal cap layer in a cross-sectional view.

Abstract: A nano-twinned Cu—Ni alloy layer is provided, wherein more than 50% in volume of the nano-twinned Cu—Ni alloy layer comprises plural twinned grains, the plural twinned grains comprise plural columnar twinned grains, and a Ni content in the nano-twinned Cu—Ni alloy layer is in a range from 0.05 at % to 20 at %. In addition, a method for manufacturing the aforesaid nano-twinned Cu—Ni alloy layer is also provided.

Abstract: A nano-twinned copper foil is provided, which comprises: plural twinned grains, wherein at least part of the plural twinned grains are formed by stacking plural nano-twins along a [111] crystal axis. The nano-twinned copper foil has a first surface and a second surface opposite to the first surface, and 80% or more of areas of the first surface and the second surface respectively exposes (111) planes of the nano-twins. In addition, the present invention further provides a method for manufacturing the aforesaid nano-twinned copper foil, an electronic element comprising the same, and a method for manufacturing the electronic element.

Abstract: An electrical connection includes a first driving substrate, a first adhesive layer, a first bonding pad a first bonding pad and a second bonding pad. The first driving substrate includes a first substrate and a first dielectric layer on the first substrate. The first adhesive layer is at a sidewall of the first dielectric layer of the first driving substrate. The first bonding pad is on the first substrate of the first driving substrate and in contact with the first adhesive layer, and the first bonding pad includes a plurality of grains, the grains are connected with each other, the grains include [111]-oriented copper grains, and a maximum width of the first bonding pad is equal to or less than 8 microns. The second bonding pad is on the first bonding pad.

Abstract: An electrical connection includes a first driving substrate, a first adhesive layer, a first bonding pad a first bonding pad and a second bonding pad. The first driving substrate includes a first substrate and a first dielectric layer on the first substrate. The first adhesive layer is at a sidewall of the first dielectric layer of the first driving substrate. The first bonding pad is on the first substrate of the first driving substrate and in contact with the first adhesive layer, and the first bonding pad includes a plurality of grains, the grains are connected with each other, the grains include [111]-oriented copper grains, and a maximum width of the first bonding pad is equal to or less than 8 microns. The second bonding pad is on the first bonding pad.

Abstract: A method includes forming a first connector and a second connector over a first wafer and a second wafer, respectively, in which each of the first and second connectors are formed by forming an opening in a dielectric layer; depositing a first metal layer in the opening, in which the first metal layer has a nano-twinned structure with (111) orientation; and depositing a second metal layer over the first metal layer, the second metal layer and the first metal layer being made of different materials, in which the second metal layer has a nano-twinned structure with (111) orientation; attaching the first wafer to the second wafer, such that that the second metal layer of the first connector on the first wafer is in contact with the second metal layer of the second connector on the second wafer; and performing a thermo-compression process to bond the first and second wafers.

Abstract: Disclosed herein is an electrical connecting structure having nano-twins copper, including a first substrate having a first nano-twins copper layer and a second substrate having a second nano-twins copper layer. The first nano-twins copper layer includes a plurality of first nano-twins copper grains. The second nano-twins copper layer includes a plurality of second nano-twins copper grains. The first nano-twins copper layer is joined with the second nano-twins copper layer. At least a portion of the first nano-twins copper grains extend into the second nano-twins copper layer, or at least a portion of the second nano-twins copper grains extend into the first nano-twins copper layer.

Abstract: A nano-twinned Cu—Ni alloy layer is provided, wherein more than 50% in volume of the nano-twinned Cu—Ni alloy layer comprises plural twinned grains, the plural twinned grains comprise plural columnar twinned grains, and a Ni content in the nano-twinned Cu—Ni alloy layer is in a range from 0.05 at % to 20 at %. In addition, a method for manufacturing the aforesaid nano-twinned Cu—Ni alloy layer is also provided.

Abstract: An auxiliary prediction system is provided to predict reliability of an object after a specific operation is applied to the target object. The auxiliary prediction system includes an image correction module and an analysis module. The image correction module performs an image correction procedure to convert an original image of the target object into a first correction image. The analysis module performs a feature analysis on the first correction image through an artificial intelligence model that has been trained, so as to predict whether the target object has a defect or not after the specific operation.

Abstract: An electrical connecting structure and a method for manufacturing the same are disclosed. The electrical connecting structure comprises: a first substrate; a second substrate; and an interconnect element disposed between the first substrate and the second substrate, wherein the interconnect element has a width, and no joint surface is present in the interconnect element in a range of 50% or more of the width.

Abstract: A nano-twinned copper layer with a doped metal element is disclosed, wherein the nano-twinned copper is doped with at least one metal element selected from the group consisting of Ag, Ni, Al, Au, Pt, Mg, Ti, Zn, Pd, Mn and Cd in a region from a surface of the nano-twinned copper layer to a depth being 0.3 ?m, and a content of the metal element in the region is ranged from 0.5 at % to 20 at %. In addition, at least 50% in volume of the nano-twinned copper layer includes plural twinned grains. Furthermore, a substrate including the aforesaid nano-twinned copper layer and a method for preparing the aforesaid nano-twinned copper layer are also disclosed.

Abstract: An electrode for a lithium-ion battery is disclosed, which comprises: a collector comprising a nano-twinned copper foil; and a negative electrode material disposed on the collector, wherein the negative electrode material comprises at least one selected from the group consisting of: silicon, silicon nitride, graphite, graphene, carbon nanotubes, carbon nano-fibers and carbon nano-particles. In addition, a lithium-ion battery comprising the aforesaid electrode is also provided.

Abstract: An auxiliary prediction system is provided to predict reliability of an object after a specific operation is applied to the target object. The auxiliary prediction system includes an image correction module and an analysis module. The image correction module performs an image correction procedure to convert an original image of the target object into a first correction image. The analysis module performs a feature analysis on the first correction image through an artificial intelligence model that has been trained, so as to predict whether the target object has a defect or not after the specific operation.

Abstract: A large grain quasi-single-crystal film and a manufacturing method thereof are provided. The metal film having the <111> preferred orientation on its surface is subjected to mechanical tensile force to make the arrangement of crystal grains more ordered. The metal film is grown into a film with large crystal grains having an average diameter of over 500 microns by annealing at a temperature below the recrystallization temperature, thereby obtaining a large grain quasi-single-crystal film having the preferred directions of three axes. The large grain quasi-single-crystal film has a <110> preferred orientation along the tensile direction and a <211> preferred orientation along the direction vertical to the tensile force, and maintains a <111> preferred orientation on its top surface. The present invention can be used to produce highly anisotropic large-area quasi-single-crystal films, and can also be applied to grow 2-dimensional materials or develop anisotropic structures.

Abstract: A nano-twinned copper layer with a doped metal element is disclosed, wherein the nano-twinned copper is doped with at least one metal element selected from the group consisting of Ag, Ni, Al, Au, Pt, Mg, Ti, Zn, Pd, Mn and Cd in a region from a surface of the nano-twinned copper layer to a depth being 0.3 ?m, and a content of the metal element in the region is ranged from 0.5 at % to 20 at %. In addition, at least 50% in volume of the nano-twinned copper layer includes plural twinned grains. Furthermore, a substrate including the aforesaid nano-twinned copper layer and a method for preparing the aforesaid nano-twinned copper layer are also disclosed.

Abstract: A twinned copper layer is disclosed, wherein 35% or more in volume of the twinned copper layer comprises plural twinned grains, 30% or more of the twinned grains are flake twinned grains, and a ratio of a length to a thickness of at least a part of the flake twinned grains is greater than or equal to 2. In addition, a substrate having the aforesaid twinned copper layer and a method for preparing the aforesaid twinned copper layer are also disclosed.

Abstract: A quasi-single-crystal film and its manufacturing method thereof are provided, in which a metal film having a preferred orientation of <111> on its surface is subjected to a mechanical stretching force, such that the crystal grains thereof are able to form in a much more orderly arrangement, and a quasi-single-crystal film having preferred orientations on three axes can be obtained. The proposed quasi-single-crystal film has preferred orientations of <211> and <110> on its stretching direction and a direction that is perpendicular to the stretching direction, respectively, and retains a preferred orientation of <111> on its surface. By employing the present invention, it is advantageous of manufacturing large-area quasi single crystal films having high anisotropy as well as growing two dimensional materials or developing of other anisotropic feature structures.