Abstract: A package structure and a method of forming the same are provided. The package structure includes a first die, a second die, a first encapsulant, and a buffer layer. The first die and the second die are disposed side by side. The first encapsulant encapsulates the first die and the second die. The second die includes a die stack encapsulated by a second encapsulant encapsulating a die stack. The buffer layer is disposed between the first encapsulant and the second encapsulant and covers at least a sidewall of the second die and disposed between the first encapsulant and the second encapsulant. The buffer layer has a Young's modulus less than a Young's modulus of the first encapsulant and a Young's modulus of the second encapsulant.

Abstract: A method of building a characteristic model includes: acquiring raw electrical data from a measurement system outside one or more processing units; acquiring operational state-related data from an information collector inside the one or more processing units; performing a data annealing process on the raw electrical data and the operational state-related data to obtain and purified electrical data and purified operational state-related data; and performing a machine learning (ML)-based process to build the characteristic model based on the purified electrical data and the purified operational state-related data.

Abstract: A method includes forming a dummy gate over a semiconductor fin; forming a source/drain epitaxial structure over the semiconductor fin and adjacent to the dummy gate; depositing an interlayer dielectric (ILD) layer to cover the source/drain epitaxial structure; replacing the dummy gate with a gate structure; forming a dielectric structure to cut the gate structure, wherein a portion of the dielectric structure is embedded in the ILD layer; recessing the portion of the dielectric structure embedded in the ILD layer; after recessing the portion of the dielectric structure, removing a portion of the ILD layer over the source/drain epitaxial structure; and forming a source/drain contact in the ILD layer and in contact with the portion of the dielectric structure.

Abstract: A powered industrial truck includes a lateral movement assembly including four sliding members and four pivotal members both on a wheeled carriage, four links having a first end pivotably secured to the sliding member and a second end pivotably secured to either end of the pivotal member, a motor shaft having two ends pivotably secured to the pivotal members respectively, a first electric motor on one frame member, and four mounts attached to the sliding members respectively; two lift assemblies including a second electric motor, a shaft having two ends rotatably secured to the sliding members respectively, two gear trains at the ends of the shaft respectively, a first gear connected to the second electric motor, a second gear on the shaft, and a first roller chain on the first and second gears; two electric attachments on the platform and being laterally moveable, each attachment. The mount has rollers.

Abstract: A bracket and a terminal equipment are provided. The bracket is provided for a terminal device to be installed thereon and includes a bracket body, two installing elements, and at least one holding element. The two installing elements respectively protrude outward from two sides of the bracket body, and each of the two installing elements includes an engaging portion. The two installing elements are configured to be inserted into the terminal device so the terminal device is installed on the bracket, and each of the engaging portions is configured such that each of the installing elements is engaged with and retained in the terminal device. The holding element protrudes outward from the bracket body and is configured to be inserted into a loading hole of the terminal device.

Abstract: The present application discloses a semiconductor structure and methods for manufacturing semiconductor structures. The semiconductor structure includes a plurality of bottom dies and a top die stacked on the bottom dies. The bottom dies receive power supplies through tiny through silicon vias (TSVs) formed in backside substrates of the bottom dies, while the top die receives power supplies through dielectric vias (TDVs) formed in a dielectric layer that covers the bottom dies. By enabling backside power delivery to the bottom die, more space can be provided for trace routing between stacked dies. Therefore, greater computation capability can be achieved within a smaller chip area with less power loss.

Abstract: Some implementations described herein provide a semiconductor structure. The semiconductor structure includes a first conductive structure disposed within a first layer of the semiconductor structure. The semiconductor structure includes a dielectric structure disposed within a second layer of the semiconductor structure, with the second layer being disposed on the first layer. The semiconductor structure includes a second conductive structure disposed within a recessed portion of the dielectric structure that extends to the first conductive structure, with the second conductive structure having a concave recessed portion on a top surface of the second conductive structure. The semiconductor structure includes multiple layers of conductive material disposed within the concave recessed portion of the second conductive structure.

Abstract: A semiconductor structure includes a substrate, a conductive via and a first insulation layer. The conductive via is through the substrate. The first insulation layer is between the substrate and the conductive via. A first surface of the first insulation layer facing the substrate and a second surface of the first insulation layer facing the conductive via are extended along different directions.

Abstract: The present disclosure is generally related to 3D imaging capable OLED displays. A light field display comprises an array of 3D light field pixels, each of which comprises an array of corrugated OLED pixels, a metasurface layer disposed adjacent to the array of 3D light field pixels, and a plurality of median layers disposed between the metasurface layer and the corrugated OLED pixels. Each of the corrugated OLED pixels comprises primary or non-primary color subpixels, and produces a different view of an image through the median layers to the metasurface to form a 3D image. The corrugated OLED pixels combined with a cavity effect reduce a divergence of emitted light to enable effective beam direction manipulation by the metasurface. The metasurface having a higher refractive index and a smaller filling factor enables the deflection and direction of the emitted light from the corrugated OLED pixels to be well controlled.

Abstract: A semiconductor device includes a semiconductor substrate having a first region and a second region, insulators, gate stacks, and first and second S/Ds. The first and second regions respectively includes at least one first semiconductor fin and at least one second semiconductor fin. A width of a middle portion of the first semiconductor fin is equal to widths of end portions of the first semiconductor fin. A width of a middle portion of the second semiconductor fin is smaller than widths of end portions of the second semiconductor fin. The insulators are disposed on the semiconductor substrate. The first and second semiconductor fins are sandwiched by the insulators. The gate stacks are over a portion of the first semiconductor fin and a portion of the second semiconductor fin. The first and second S/Ds respectively covers another portion of the first semiconductor fin and another portion of the second semiconductor fin.

Abstract: Methods, systems, and devices for wireless communications are described. A transmitting device may transmit an expiration indication to a receiving device as part of a scheduling message for a transport block. The expiration indication may provide information related to an expiration time for the transport block. If the expiration time is reached prior to successful reception by a receiving device, the receiving device may assume that the transport block has expired and may refrain from transmitting a retransmission grant, or may empty a hybrid automatic repeat request (HARM) buffer associated with the transport block. If the transmitting device fails to successfully receive an indication from the receiving device of a successful reception of the transport block prior to the expiration period, the transmitting device may also assume that the transport block has expired.

Abstract: A method for determining a height of a plant, an electronic device, and a storage medium are disclosed. In the method, a target image is obtained by mapping an obtained color image with an obtained depth image. The electronic device processes the color image by using a pre-trained mobilenet-ssd network, obtains a detection box appearance of the plant, and extracts target contours of the plant to be detected from the detection box. The electronic device determines a depth value of each of pixel points in the target contour according to the target image. Target depth values are obtained by performing a de-noising on depth values of the pixel points, and a height of the plant to be detected is determined according to the target depth value. The method improves accuracy of height determination of a plant.

Abstract: A laser device for photocoagulation surgery is disclosed, wherein the laser device includes a multi-wavelength laser source having a first direction and a second direction different from the first direction. The laser device includes a positioning light source, a first laser light source, a first lens, a second laser light source, a second lens, a third laser light source, a third lens, a fourth laser light source and a fourth lens. The positioning light source configured to project a positioning visible light along the first direction, wherein the positioning visible light has a specific wavelength being about 635 nm. The first laser light source configured to project a first laser light having a first wavelength along the second direction. The first lens disposed in a main optical path of the positioning visible light, and configured to receive the first laser light and reflect the first laser light along the first direction.

Abstract: A chemical mechanical polishing system includes a platen to support a polishing pad having a polishing surface, a conduit having an inlet to be coupled to a gas source, and a dispenser coupled to the conduit and having a convergent-divergent nozzle suspended over the platen to direct gas from the gas source onto the polishing surface of the polishing pad.

Abstract: The present disclosure relates to an integrated chip. The integrated chip includes a substrate having one or more interior surfaces forming a recess within an upper surface of the substrate. Source/drain regions are disposed within the substrate on opposing sides of the recess. A first gate dielectric is arranged along the one or more interior surfaces forming the recess, and a second gate dielectric is arranged on the first gate dielectric and within the recess. A gate electrode is disposed on the second gate dielectric. The second gate dielectric includes one or more protrusions that extend outward from a recessed upper surface of the second gate dielectric and that are arranged along opposing sides of the second gate dielectric.

Abstract: The present disclosure provides a matrix device and an operation method thereof. The matrix device includes a transpose circuit and a memory. The transpose circuit is configured to receive a first element string representing a native matrix from a matrix source, wherein all elements in the native matrix are arranged in the first element string in one of a “row-major manner” and a “column-major manner”. The transpose circuit transposes the first element string into a second element string, wherein the second element string is equivalent to an element string in which all elements of the native matrix are arranged in another one of the “row-major manner” and the “column-major manner”. The memory is coupled to the transpose circuit to receive the second element string.

Abstract: A ghost key preventing circuit includes plural driving lines, plural sensing lines, plural key switches, plural bias resistors and a controller. The plural driving lines and the plural sensing lines are collaboratively formed as a matrix circuit. The plural key switches are included in the matrix circuit. The plural bias resistors are connected with the corresponding sensing lines. When the key switch of a specified switch circuit is turned on, a divided voltage is generated and outputted from the specified switch circuit. The controller judges whether the key switch of the specified switch circuit is normally turned on or the key switch is a ghost key according to the divided voltage.

Abstract: A method of obtaining a parameter of a synchronous motor is disclosed and includes: setting an operating current of the motor; providing a positive fixed voltage to the motor and monitoring a feedback current from the motor; recording a triggering time for the feedback current to reach the operating current; providing a negative fixed voltage to the motor for the triggering time; obtaining a square-wave voltage with a fixed frequency based on the positive fixed voltage and the negative fixed voltage being provided; providing the square-wave voltage with the fixed frequency to one axis of the motor; transforming three-phase current from the motor into an axial current; computing an inductance value of this axis based on the fixed frequency, the square-wave voltage and the axial current; and, creating an inductance-current parameter table based on a plurality of the inductance values and the axial currents correspondingly.

Abstract: An integrated circuit package including integrated circuit dies with slanted sidewalls and a method of forming are provided. The integrated circuit package may include a first integrated circuit die, a first gap-fill dielectric layer around the first integrated circuit die, a second integrated circuit die underneath the first integrated circuit die, and a second gap-fill dielectric layer around the second integrated circuit die. The first integrated circuit die may include a first substrate, wherein a first angle is between a first sidewall of the first substrate and a bottom surface of the first substrate, and a first interconnect structure on the bottom surface of the first substrate, wherein a second angle is between a first sidewall of the first interconnect structure and the bottom surface of the first substrate. The first angle may be larger than the second angle.

Abstract: Interconnect structure packages (e.g., through silicon vias (TSV) packages, through interlayer via (TIV) packages) may be pre-manufactured as opposed to forming TIVs directly on a carrier substrate during a manufacturing process for a semiconductor die package at backend packaging facility. The interconnect structure packages may be placed onto a carrier substrate during manufacturing of a semiconductor device package, and a semiconductor die package may be placed on the carrier substrate adjacent to the interconnect structure packages. A molding compound layer may be formed around and in between the interconnect structure packages and the semiconductor die package.