Abstract: A pixel structure includes a first light-emitting diode for emitting a first light, wherein the first light-emitting diode has a first semiconductor layer, a first light-emitting surface, and a first electrode under the first semiconductor layer away from the first light-emitting surface; a second light-emitting diode for emitting a second light, wherein the second light-emitting diode has a second semiconductor layer, a second light-emitting surface, and a second electrode under the second semiconductor layer away from the second light-emitting surface; a dielectric layer surrounding and contacting the first semiconductor layer and the second light-emitting diode and exposing the first light-emitting surface, the first electrode, the second light-emitting surface and the second electrode; a common conductive structure having a semiconductor layer and a metal layer; and a light-transmitting conductive layer covering and electrical connecting the first light-emitting diode, the second light-emitting diode and

Abstract: An embodiment of the present disclosure provides a semiconductor device arrangement. This semiconductor device arrangement includes a carrier, a first semiconductor device, a second semiconductor device, a first adhesive portion, and a second adhesive portion. The first semiconductor device and the second semiconductor device are separately arranged on the carrier. The first adhesive portion and the second adhesive portion are separately arranged on the carrier, the first adhesive portion is located between the first semiconductor device and the carrier, and the second adhesive portion is located between the second semiconductor device and the carrier. In the cross-sectional view, the first adhesive portion includes an inclined sidewall, and the inclined sidewall is adjacent to the carrier and forms an interior angle greater than 90 degrees to the carrier.

Abstract: A clock control method for a High Definition Multimedia Interface (HDMI) receiver operating in a power-saving mode in a sink device is provided. The HDMI receiver has a first module, a second module, and a third module. The clock control method includes the following stages. A clock signal is enabled to be sent to the first module and the third module during a first region of received data. The clock signal is disabled to be sent to the second module during the first region of the received data. The clock signal is enabled to be sent to the third module and the clock signal is disabled to be sent to the first module and the second module during a second region of the received data.

Abstract: A semiconductor fabrication facility is provided. The semiconductor fabrication facility includes a processing tool and a transmission assembly. The transmission assembly is connected to the processing tool and comprises a number of transmission lines used to supply electric power or a fluid to the processing tool or remove the fluid or an exhaust gas from the processing tool. The transmission lines includes a first transmission line and a second transmission line. The first transmission line has a first temperature and the second transmission line has a second temperature. The second temperature is higher than the first temperature. The first transmission line and the second transmission line are arranged such that a thermal energy of the second transmission line is able to be transmitted to the first transmission line to change the first temperature of the first transmission line.

Abstract: An audio capture method includes: determining one or more regions of interest (ROIs) pertaining to an image sequence or a video stream; determining position information of the one or more ROIs; converting the position information of the one or more ROIs into direction information of the one or more ROIs; and performing a beamforming processing on a plurality of microphone signals to generate an audio capture signal based on direction information of the one or more ROIs and direction information of one or more sound sources that are captured in the plurality of microphone signals.

Abstract: A semiconductor structure includes a substrate, a through via penetrating the substrate, a trench capacitor, a first RDL, a second RDL, a contact feature, and a chip. The trench capacitor extends from a back surface toward a front surface of the substrate, wherein the trench capacitor is separated from an active area at the front surface of the substrate. The first RDL is disposed over the front surface and electrically connecting to the through via. The second RDL is disposed over the back surface of the substrate and electrically connecting to the through via and the trench capacitor. The contact feature is disposed over the second RDL and electrically connecting to the trench capacitor through the second RDL. The chip is bonded over the front surface of the substrate. A method of manufacturing the semiconductor structure is also provided.

Abstract: A wavelength conversion unit arrangement includes a carrier and a wavelength conversion unit. The wavelength conversion unit includes a wavelength conversion layer and a filter layer, and the filter layer attaches the wavelength conversion unit to the carrier. The filter layer has a first surface facing the carrier and a second surface opposite the first surface, and the first surface and the second surface have different textures.

Abstract: A semiconductor device includes: first and second fin structures, disposed on a substrate, that respectively extend in parallel to an axis; a first gate feature that traverses the first fin structure to overlay a central portion of the first fin structure; a second gate feature that traverses the second fin structure to overlay a central portion of the second fin structure; a first spacer comprising: a first portion comprising two layers that respectively extend from sidewalls of the first gate feature toward opposite directions of the axis; and a second portion comprising two layers that respectively extend from sidewalls of the first portion of the first spacer toward the opposite directions of the axis; and a second spacer comprising two layers that respectively extend from sidewalls of the second gate feature toward the opposite directions of the axis.

Abstract: A reference voltage generation circuit includes a voltage conversion circuit, a voltage divider, a reference voltage generator, an error amplifier, and a control circuit. The voltage conversion circuit is configured to convert an input voltage to an output voltage according to a first control signal. The voltage divider performs a voltage division operation on the output voltage to generate first and second feedback voltages. The reference voltage generator is configured to generate a reference voltage according to a second control signal. The error amplifier is configured to generate the first control signal according to a difference between the reference voltage and the first feedback voltage. The control circuit is configured to generate the second control signal according to the second feedback voltage and the reference voltage. In response to the second feedback voltage being decreasing gradually, the reference voltage is adjusted to trace the second feedback voltage.

Abstract: A method, computer system, and a computer program product are provided for responding to a language input query with ad hoc enriched term data. The technique comprises extracting information relating to the language input query using a Language Support Assistance Service. The extracted information includes one or more language terms requiring further support and an associated request type. This is identified from metadata relating to the language input query. Information is provided to a Term Related Corpus Data Service that includes one or more language terms requiring further support and the identified request type and any identified sources. The Term Related Corpus Data Service returns one or more ad hoc enriched terms that are tailored to the one or more language terms requiring further support and is according to the associated request type. The Language Support Assistance Service provides a response to the language input query.

Abstract: A method includes forming a first conductive feature and a second conductive feature over a first substrate, wherein the first and second conductive features comprise nano-twinned copper; and depositing a first metal cap layer over the first conductive feature and a second metal cap layer over the second conductive feature, wherein the first metal cap layer is spaced apart from the second metal cap layer in a cross-sectional view.

Abstract: A buck converter includes a first transistor, a second transistor, an inductor and a capacitor. The first transistor, the second transistor and the inductor are coupled to a switching node. A method includes charging the switching node for a predetermined duration using a first charging current, detecting a voltage at the switching node to obtain a first detection voltage, and determining the connection status of the inductor according to at least the first detection voltage.

Abstract: A semiconductor device includes in a transistor layer, components of corresponding transistors (transistor components); in corresponding layers below the transistor layer (sub-TR layers), various non-dummy structures (non-dummy sub-TR structures) coupled to the transistor components and which are included because the semiconductor device has a buried power rail (BPR) architecture; and in corresponding layers over the transistor layer (supra-TR layers), various dummy structures (dummy supra-TR structures) which are included as artifacts resulting from the semiconductor device being based on a dual-architecture-compatible design which is substantially equally suitable either to adaptation into a non-BPR architecture or adaptation into the BPR architecture; and the semiconductor device being an inductor.

Abstract: The present invention provides a ramp signal generator of a SMPS. The ramp signal generator includes a filter and a charge pump. The filter is configured to filter a PWM signal to generate a filtered PWM signal. The charge pump is configured to receive the PWM signal and the filtered PWM signal to generate an output current, wherein the output current is used to generate a ramp signal, and the ramp signal is used for a PWM signal generator to generate the PWM signal.

Abstract: An overhead transport vehicle is described for association with an Automated Material Handling System (AMHS). The overhead transport vehicle provides features to the AMHS by which the AMHS is able to reduce a number of manual urgent lot rescues by the fab operator when a logistic algorithm controlling traffic in the AMHS is unable to transport the front opening unified pods (FOUP) from one tool to the subsequent tool in the sequence of the process steps within the q-time due to unexpected problems. An indicator on the overhead transport vehicle which helps the fab operator with spotting a lot in trouble is described. A backup power source on the overhead transport vehicle used in case of a main power failure is also described.

Abstract: Various embodiments of the present disclosure are directed toward an integrated chip including an undoped layer overlying a substrate. A first barrier layer overlies the undoped layer. A doped layer overlies the first barrier layer. Further, a second barrier layer overlies the first barrier layer, where the second barrier layer is laterally offset from a perimeter of the doped layer by a non-zero distance. The first and second barrier layers comprise a same III-V semiconductor material. A first atomic percentage of a first element within the first barrier layer is less than a second atomic percentage of the first element within the second barrier layer.

Abstract: A passivation layer and conductive via are provided, wherein the transmittance of an imaging energy is increased within the material of the passivation layer. The increase in transmittance allows for a greater cross-linking that helps to increase control over the contours of openings formed within the passivation layer. Once the openings are formed, the conductive vias can be formed within the openings.

Abstract: An overhead transport vehicle is described for association with an Automated Material Handling System (AMHS). The overhead transport vehicle provides features to the AMHS by which the AMHS is able to reduce a number of manual urgent lot rescues by the fab operator when a logistic algorithm controlling traffic in the AMHS is unable to transport the front opening unified pods (FOUP) from one tool to the subsequent tool in the sequence of the process steps within the q-time due to unexpected problems. An indicator on the overhead transport vehicle which helps the fab operator with spotting a lot in trouble is described. A backup power source on the overhead transport vehicle used in case of a main power failure is also described.

Abstract: A method of producing a container product comprises providing a mold including a first part and a second part. The mold is closed to define a cavity having a first area and a second area. A molten plastic composition including a polymer and a physical blowing agent is filled into the cavity. Then, the molten plastic composition in the cavity is cooled, such that the molten plastic composition in the first area is completely cooled and solidifies or a central portion of the first area has micro uncooled molten plastic composition. The second area has the plastic composition in the molten state. The first part of the mold is moved in the axial direction. The molten plastic composition in the second area forms a beehive foam after foaming and expansion. Then, the foamed container product in the mold is cooled to take shape and then removed after opening the mold.

Abstract: A semiconductor device includes a first semiconductor fin that is formed over a substrate and extends along a first lateral axis. The semiconductor device includes a second semiconductor fin that is also formed over the substrate and extends along the first lateral axis. At least a tip portion of the first semiconductor fin and at least a tip portion of the second semiconductor fin bend toward each other along a second lateral axis that is perpendicular to the first lateral axis.