Abstract: Methods for patterning in a semiconductor process are described. A dummy layer is formed having a cut therein. A first sacrificial layer is formed over the dummy layer, and at least a portion of the first sacrificial layer is disposed in the cut. A second sacrificial layer is formed over the first sacrificial layer. The second sacrificial layer is patterned to have a first pattern. Using the first pattern of the second sacrificial layer, the first sacrificial layer is patterned to have the first pattern. The second sacrificial layer is removed. Thereafter, a second pattern in the first sacrificial layer is formed comprising altering a dimension of the first pattern of the first sacrificial layer. Using the second pattern of the first sacrificial layer, the dummy layer is patterned. Mask portions are formed along respective sidewalls of the patterned dummy layer. The mask portions are used to form a mask.

Abstract: An embodiment method includes defining a first mandrel and a second mandrel over a hard mask layer. The method also includes depositing a spacer layer over and along sidewalls of the first mandrel and the second mandrel, and forming a sacrificial material over the spacer layer between the first mandrel and the second mandrel. The sacrificial material includes an inorganic oxide. The method further includes removing first horizontal portions of the spacer layer to expose the first mandrel and the second mandrel. Remaining portions of the spacer layer provide spacers on sidewalls of the first mandrel and the second mandrel. The method further includes removing the first mandrel and the second mandrel and patterning the hard mask layer using the spacers and the sacrificial material as an etch mask.

Abstract: An illumination assembly includes a substrate, a wiring structure, a reflecting layer and a plurality of light-emitting diodes. The wiring structure is formed on a part of the substrate, and includes a catalyst layer covering the part of the substrate, and a conducting layer formed on the catalyst layer. The reflecting layer is formed on another part of the substrate that is exposed from the wiring structure. The light-emitting diodes are disposed on the wiring structure and are electrically connected to the wiring structure.

Abstract: A transient voltage suppressor includes a substrate, a first well, a second well, a third well, a first electrode, a second electrode and a doped region. The first well is formed in the substrate and near a surface of the substrate. The second well is formed in the first well and near the surface. The third well is formed in the first well and near the surface. There is a gap between the second well and the third well. The first electrode and second electrode are formed in the second well and near the surface respectively. The first well and first electrode have a first electrical property. The second well, third well and second electrode have a second electrical property. The doped region is formed between the first electrode and second electrode and near the surface and electrically connected with the first well and third well.

Abstract: Bakeware has a body and a window. The body has a top surface, a bottom plate, a side wall, a chamber, a top opening, and a side opening. The side wall is formed around and protrudes out of the bottom plate. The chamber is formed in the body, is deposited above the bottom plate, and is enclosed by the side wall. The top opening is formed on the top surface of the body and is in communication with the chamber. The side opening is formed through the side wall and is in communication with the chamber. The window is transparent and is deposited on the side wall of the body for sealing the side opening of the body. The window of the bakeware is convenient to observe the baked degree of the food in the body.

Abstract: A transient voltage suppressor includes a substrate, a first well, a second well, a first electrode, a second electrode, a doped region and a heavily-doped region. The first well is formed in the substrate and near a surface of substrate. The second well is formed in the first well and near the surface. The first electrode and second electrode are formed in the second well and near the surface respectively. The first well and first electrode have a first electrical property. The second well and second electrode have a second electrical property. The doped region is formed between the first electrode and second electrode and near the surface and electrically connected with the first well and second well. The heavily-doped region is formed under the doped region. The heavily-doped region has the same electrical property with the doped region and has higher doping concentration than the doped region.

Abstract: The present disclosure provides a semiconductor device including a carrier; a current blocking layer, formed on the carrier; a function structure, formed on the current blocking layer and comprising a surface opposite to the current blocking layer; a protective structure, formed on the function structure and exposing a portion of the surface; and an electrode, formed on the protective structure and exposing the portion of the surface.

Abstract: A method of manufacturing a semiconductor device includes: forming a first mandrel and a second mandrel over a mask layer; depositing a spacer layer over the first mandrel and the second mandrel; forming a line-end cut pattern over the spacer layer between the first mandrel and the second mandrel; depositing a protection layer over the line-end cut pattern; etching the protection layer on the line-end cut pattern; reducing a width of the line-end cut pattern; etching first horizontal portions of the spacer layer with the reduced line-end cut pattern as an etching mask; removing the first mandrel and the second mandrel; and patterning the mask layer using the etched spacer layer and the etched line-end cut pattern as an etch mask.

Abstract: A trocar set includes a handle portion, a first sleeve, a second sleeve, and a gasbag. The handle portion includes a grip, a connection part, and a first gas valve. The connection part extends from the grip and includes an assembling channel. The first gas valve is connected to the connection part and communicates with the assembling channel. An assembling end of the first sleeve is assembled to the connection portion. A sleeving end of the first sleeve is provided with a first opening. The second sleeve is retractably connected to the sleeving end of the first sleeve. A sleeve wall of the second sleeve is provided with a second opening. The gasbag is connected to an end of the second sleeve away from the sleeving end and corresponds to the second opening. The design of the retractable sleeves is benefit to perform operation.

Abstract: A trocar includes a puncturing device and a sleeving component. The puncturing device includes a base and a puncturing portion. The puncturing portion includes a bump and a tip. The bump extends from an outer surface of the puncturing portion radially. The sleeving component includes a gas pressure base, a first tube assembly, a second tube assembly, and a fixation base. The second tube assembly is retractable. The fixation base is fixed to the second sleeving end and includes a guiding groove and a key groove. The guiding groove communicates the key groove. While the bump of the puncturing device is entered through the guiding groove, and the puncturing device is rotated to have the bump be in the key groove, the puncturing device is secured to the fixation base, and the puncturing device drives the fixation base to move along an elongated direction of the puncturing device.

Abstract: A plasma processing apparatus is provided. The plasma processing apparatus includes a plasma chamber including a housing, and a first electrode array disposed above and outside the housing. The first electrode array includes a plurality of first sub-electrodes. The plasma processing apparatus also includes a number of first matching units outside of the housing, and each of the first matching units is electrically connected to each of the first sub-electrodes.

Abstract: Semiconductor devices and methods of forming semiconductor devices are provided. A method includes forming a first mask layer over a target layer, forming a plurality of spacers over the first mask layer, and forming a second mask layer over the plurality of spacers and patterning the second mask layer to form a first opening, where in a plan view a major axis of the opening extends in a direction that is perpendicular to a major axis of a spacer of the plurality of spacers. The method also includes depositing a sacrificial material in the opening, patterning the sacrificial material, etching the first mask layer using the plurality of spacers and the patterned sacrificial material, etching the target layer using the etched first mask layer to form second openings in the target layer, and filling the second openings in the target layer with a conductive material.

Abstract: A keyswitch structure includes a base, a keycap, a first support, a second support, and a connection structure. The keycap moves up and down relative to the base through the first support and the second support. The connection structure is disposed on the base and includes a vertical-motion limiting part and a horizontal-motion limiting part. The first support includes a rod-shaped connection portion and is connected to the connection structure through the rod-shaped connection portion. The vertical-motion limiting part prevents the rod-shaped connection portion from vertically moving. The horizontal-motion limiting part limits the horizontal movement of the rod-shaped connection portion. The vertical-motion limiting part and the horizontal-motion limiting part are separated in the rotation axis of the rod-shaped connection portion.

Abstract: A trocar set includes a handle portion, a first sleeve, a second sleeve, and a gas tight assembly. The handle portion includes a grip, a connection part, and a second gas valve. The connection part extends from the grip and includes an assembling channel. The second gas valve is connected to the connection part and communicates with the assembling channel. An assembling end of the first sleeve is assembled to the connection part. The second sleeve includes a receiving end, wherein the sleeving end is inserted into the receiving end. The gas tight assembly is fixed to the second sleeve and includes a gas tight sleeve and a gas tight ring. The gas tight sleeve encloses the receiving end, and the gas tight ring is pressed by the gas tight sleeve to be tightly attached to the first sleeve.

Abstract: A method of forming a semiconductor device structure is provided. The method includes successively forming first and second hard mask layers over a trench pattern region of a material layer. The second hard mask layer has a first tapered opening corresponding to a portion of the trench pattern region and a passivation spacer is formed on a sidewall of the first tapered opening to form a second tapered opening therein. The method also includes forming a third tapered opening below the second tapered opening and removing a portion of the passivation spacer in a first etching process. The method also includes forming a vertical opening in the first hard mask layer below the bottom of the third tapered opening in a second etching process. The vertical opening has a width that is substantially equal to a bottom width of the third tapered opening.

Abstract: A method of forming a semiconductor device structure is provided. The method includes successively forming first and second hard mask layers over a trench pattern region of a material layer. The second hard mask layer has a first tapered opening corresponding to a portion of the trench pattern region and a passivation spacer is formed on a sidewall of the first tapered opening to form a second tapered opening therein. The method also includes forming a third tapered opening below the second tapered opening and removing a portion of the passivation spacer in a first etching process. The method also includes forming a vertical opening in the first hard mask layer below the bottom of the third tapered opening in a second etching process. The vertical opening has a width that is substantially equal to a bottom width of the third tapered opening.

Abstract: A multi-channel transient voltage suppressor includes a plurality of diode strings, a Zener diode and a diode array. The diode strings respectively have a plurality of input output terminals. The diode array includes a first bypass diode and a second bypass diode. The first bypass diode is coupled between a common bus and a ground terminal, and provides a forward turned-on path from the ground terminal to the common bus. The second bypass diode is coupled to the first bypass diode in parallel, and provides a reverse turned-on path from the common bus to the ground terminal. A current dissipation path is formed between each of the input output terminals and the ground terminal by the diode array.

Abstract: A transient voltage suppressing (TVS) integrated circuit includes an input output pin, a ground pin, a substrate, a first TVS die and a second TVS die. The substrate provides a common bus. The first TVS die is disposed on the substrate, and includes a first input output terminal and a first reference ground terminal. The second TVS die is disposed on the substrate and includes a second input output terminal and a second reference ground terminal. The second reference ground terminal is electrically coupled to the first reference ground terminal through the common bus, and the first input output terminal is coupled to the first input out pin, and the second input output terminal is coupled to a ground pin.

Abstract: Systems and methods are disclosed for transitioning a magnetic keyboard between retracted and extended states using a retractable keyboard hinge structure. An information handling system may include a housing having a first housing portion and a second housing portion rotatably coupled by the retractable keyboard hinge structure. The first housing portion may include a magnetic keyboard, and a sliding plate including a plurality of magnets that may be disposed underneath the magnetic keyboard. The retractable keyboard hinge structure may include a first hinge and a first cam. The first hinge and the first cam, when the first housing portion is rotated in relation to the second housing portion, may cause the sliding plate to move in a first linear direction. In response to the sliding plate moving, the plurality of magnets may cause the magnetic keyboard to move in a second linear direction perpendicular to the first linear direction.