Abstract: A semiconductor structure includes: a substrate; a first fin and a second fin disposed on the substrate and spaced apart from each other; a dielectric wall disposed on the substrate and having first and second wall surfaces; a third fin disposed on the substrate to be in direct contact with at least one of the first and second fins; a first device disposed on the first fin and including first channel features extending away from the first wall surface; a second device disposed on the second fin and including second channel features extending away from the second wall surface; at least one third device disposed on the third fin and including third channel features; and an isolation feature disposed on the substrate to permit the third device to be electrically isolated from the first and second devices. A method for manufacturing the semiconductor structure is also disclosed.

Abstract: A semiconductor structure includes spaced apart first and second fins over a substrate, a separating wall over the substrate and having opposite first and second wall surfaces, multiple first channel features extending away from the first wall surface over the first fin such that the first channel features are spaced apart, multiple second channel features extending away from the second wall surface over the second fin such that the second channel features are spaced apart, two spaced apart first epitaxial structures on the first fin such that each first channel feature interconnects the first epitaxial structures, two spaced apart second epitaxial structures on the second fin such that each second channel feature interconnects the second epitaxial structures, and a dielectric structure including at least one bottom dielectric portion separating at least one of the first and second epitaxial structures from a corresponding first and second fins.

Abstract: In some embodiments, the present disclosure relates to an integrated chip structure. The integrated chip structure includes a substrate. A gate electrode is over the substrate and a spacer structure laterally surrounds the gate electrode. A conductive via is disposed on the gate electrode. A liner is arranged along one or more sidewalls of the spacer structure. The conductive via has a bottommost surface that has a larger width than a part of the conductive via that is laterally adjacent to one or more interior sidewalls of the liner.

Abstract: A leak check is performed on a semiconductor wafer processing tool that includes a process chamber and process gas lines, and a semiconductor wafer is processed using the semiconductor wafer processing tool if the leak check passes. Each gas line includes a mass flow controller (MFC) and normally closed valves including an upstream and downstream valves upstream and downstream of the MFC. Leak checking includes: leak checking up to the downstream valves of the gas lines with the upstream valves closed and the downstream valves of the gas lines closed; and leak checking up to the upstream valve of each the process gas line with the upstream valves of the of the process gas lines closed and with the downstream valve of the of the process gas line being leak checked open and the downstream valve of every other process gas line closed.

Abstract: A semiconductor device and methods of forming the same are disclosed. The semiconductor device includes a substrate, first and second source/drain (S/D) regions, a channel between the first and second S/D regions, a gate engaging the channel, and a contact feature connecting to the first S/D region. The contact feature includes first and second contact layers. The first contact layer has a conformal cross-sectional profile and is in contact with the first S/D region on at least two sides thereof. In embodiments, the first contact layer is in direct contact with three or four sides of the first S/D region so as to increase the contact area. The first contact layer includes one of a semiconductor-metal alloy, an III-V semiconductor, and germanium.

Abstract: Semiconductor structures and methods for manufacturing the same are provided. The semiconductor structure includes a first stack structure formed over a substrate, and the first stack structure includes a plurality of nanostructures that extend along a first direction. The semiconductor structure includes a second stack structure formed adjacent to the first stack structure, and the second stack structure includes a plurality of nanostructures that extend along the first direction. The semiconductor structure includes a first gate structure formed over the first stack structure, and the first gate structure extends along a second direction. The semiconductor structure also includes a dielectric wall between the first stack structure and the second stack structure, and the dielectric wall includes a low-k dielectric material, and the dielectric wall is connected to the first stack structure and the second stack structure.

Abstract: A semiconductor device includes a substrate, first and second stacks of semiconductor nanosheets, a gate structure, first and second strained layers and first and second dielectric walls. The substrate includes first and second fins. The first and second stacks of semiconductor nanosheets are disposed on the first and second fins respectively. The gate structure wraps the first and second stacks of semiconductor nanosheets. The first and second strained layers are respectively disposed on the first and second fins and abutting the first and second stacks of semiconductor nanosheets. The first dielectric wall is disposed on the substrate and located between the first and second strained layers. The second dielectric wall is disposed on the first dielectric wall and located between the first and second strained layers. A top surface of the second dielectric wall is lower than top surfaces of the first and second strained layers.

Abstract: A method of fabricating a semiconductor structure includes the following steps. A semiconductor wafer is provided. A plurality of first surface mount components and a plurality of second surface mount components are bonded onto the semiconductor wafer, wherein a first portion of each of the second surface mount components is overhanging a periphery of the semiconductor wafer. A first barrier structure is formed in between the second surface mount components and the semiconductor wafer. An underfill structure is formed under a second portion of each of the second surface mount components, wherein the first barrier structure blocks the spreading of the underfill structure from the second portion to the first portion.

Abstract: An apparatus for producing silicon carbide crystal is provided and includes a composite structure formed by a plurality of graphite layers and silicon carbide seed crystals, wherein a density or thickness of each layer of graphite is gradually adjusted to reduce a difference of a thermal expansion coefficient and Young's modulus between the graphite layers and silicon carbide. The composite structure can be stabilized on a top portion or an upper cover of a crucible made of graphite, thereby preventing the silicon carbide crystal from falling off.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.

Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.

Abstract: Provided is a wafer polishing method comprising: a step of determining a first correlation a second correlation; a step of calculating mechanical polishing rate/chemical polishing rate; a step of obtaining a relationship between the ratio of the mechanical polishing rate to the chemical polishing rate and one or more indications of wafer flatness and determining a specific range of the ratio of the mechanical polishing rate to the chemical polishing rate; a step of selecting a first target polishing solution that meets the specific range of the ratio of the mechanical polishing rate to the chemical polishing rate based on the first correlation and the second correlation; and a step of polishing wafers using the first target polishing solution. Also provided is a wafer production method including a step of performing a polishing process by the above wafer polishing method.

Abstract: A light source device includes first and second laser light sources, a wavelength conversion unit, a light condensing module, a light combining member, and light guiding members. The first laser light source is configured to emit a first light beam along a first axis. The second laser light source is arranged along the second axis with the first laser light source and configured to emit a second light beam along the first axis. The wavelength conversion unit is configured to convert the second light beam into a color light. The condensing module is configured to condense the color light. The light combining member is configured to receive the first light beam and the color light. The light guiding members are configured to guide at least one of the first light beam and the color light.

Abstract: An illumination system for a projector includes a light engine module, a light source module, a reflective mirror, a beam splitter, a phosphor wheel, and a lens assembly. The light source module can emit blue light along a first direction. The reflective mirror may reflect the blue light such that the blue light transmits in a second direction. A reflective region of the phosphor wheel can reflect a first portion of the blue light, and a first wavelength conversion region of the phosphor wheel can to activate a second portion of the blue light to form first band light. The lens assembly is configured to allow the first band light to pass through. The reflective region of the beam splitter is configured to reflect the first portion of the blue light and the first band light to the light engine module along the first direction.

Abstract: A light source device includes first and second laser light sources, a wavelength conversion unit, a light condensing module, a light combining member, and light guiding members. The first laser light source is configured to emit a first light beam along a first axis. The second laser light source is arranged along the second axis with the first laser light source and configured to emit a second light beam along the first axis. The wavelength conversion unit is configured to convert the second light beam into a color light. The condensing module is configured to condense the color light. The light combining member is configured to receive the first light beam and the color light. The light guiding members are configured to guide at least one of the first light beam and the color light.

Abstract: An ostomy pouching device for the removal of biological waste from a patient. An embodiment of an ostomy pouching device includes an outer container housing an inner bag for receiving waste from a patient's bowel. The device includes a bowel connector to connect the bowel to the inner bag. The outer container includes an air exit aperture through which air may exit the container as it is displaced as the inner bag expands, and a gas tunnel for removing gas from the inner bag.

Abstract: A curable composition and an electronic device employing the same are provided. The curable composition includes 100 parts by mole of a first siloxane compound represented by Formula (I) wherein n is 8 to 232, wherein R1 is independently C1-3 alkyl group; 1 to 15 parts by mole of a second siloxane compound represented by Formula (II) wherein x?2, y?2, and x/y is between 0.1 and 3, and R2, R3 and R4 are independently C1-3 alkyl group; 1 to 15 parts by mole of a third siloxane compound represented by Formula (III) and 90 to 250 parts by mole of a curing agent represented by Formula (IV) wherein m is 7 to 230, wherein R5 is independently C1-3 alkyl group.

Abstract: A method for manufacturing a metal object having a solid lubricating surface layer includes: providing a metal blank having a surface; providing a plurality of microparticles and solid lubricating powder, and mixing them together, wherein the microparticles have a hardness greater than that of the surface; and projecting the microparticles and the solid lubricating powder onto the surface, wherein the microparticles cause plastic flow on the surface to form a compressive stress layer, and the solid lubricating powder adheres to the compressive stress layer to form a solid lubricating surface layer.

Abstract: In various embodiments, a function build application compiles source code to generate an executable version of a function that has a first function signature. The function build application then replaces a first data type of a first parameter included in the first function signature with a second data type to generate a second function signature for a client stub function. Subsequently, the function build application generates a remote procedure call (RPC) client that includes the client stub function. Notably, the RPC client causes the function to execute when the client stub function is invoked. Advantageously, unlike conventional techniques that require manual generation of strongly typed functions, the function build application automatically customizes the RPC client for the function.

Abstract: The light emitting diode packaging structure includes a flexible substrate, a first adhesive layer, micro light emitting elements, a conductive pad, a redistribution layer, and an electrode pad. The first adhesive layer is disposed on the flexible substrate. The micro light emitting elements are disposed on the first adhesive layer and have a first surface facing to the first adhesive layer and an opposing second surface. The micro light emitting elements include a red micro light emitting element, a blue micro light emitting element, and a green micro light emitting element. The conductive pad is disposed on the second surface of the micro light emitting element. The redistribution layer covers the micro light emitting elements and the conductive pad. The electrode pad is disposed on the redistribution layer and is electrically connected to the circuit layer. A thickness of the flexible substrate is less than 100 um.