Patents by Inventor Chih-Hao Wang

Chih-Hao Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11522046
    Abstract: The present disclosure provides a semiconductor structure and a method for forming a semiconductor structure. The method for forming a semiconductor structure includes forming a semiconductor stack over a substrate, wherein the semiconductor stack includes a plurality of first semiconductor layers and a plurality of second semiconductor layers alternatively stacked, patterning the semiconductor stack to form a first fin and a second fin adjacent to the first fin, and removing the second semiconductor layers to obtain a first group of nanosheets over the first fin and a second group of nanosheets over the second fin, wherein a lateral spacing between one of the nanosheets in the first group and a corresponding nanosheet in the second group is smaller than a vertical spacing between each of the nanosheets in the first group.
    Type: Grant
    Filed: August 13, 2021
    Date of Patent: December 6, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chih-Yu Chang, Sai-Hooi Yeong, Yu-Ming Lin, Chih-Hao Wang
  • Patent number: 11521858
    Abstract: A semiconductor device includes a first transistor and a second transistor. The first transistor includes: a first source and a first drain separated by a first distance, a first semiconductor structure disposed between the first source and first drain, a first gate electrode disposed over the first semiconductor structure, and a first dielectric structure disposed over the first gate electrode. The first dielectric structure has a lower portion and an upper portion disposed over the lower portion and wider than the lower portion. The second transistor includes: a second source and a second drain separated by a second distance greater than the first distance, a second semiconductor structure disposed between the second source and second drain, a second gate electrode disposed over the second semiconductor structure, and a second dielectric structure disposed over the second gate electrode. The second dielectric structure and the first dielectric structure have different material compositions.
    Type: Grant
    Filed: February 12, 2021
    Date of Patent: December 6, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Huan-Chieh Su, Zhi-Chang Lin, Ting-Hung Hsu, Jia-Ni Yu, Wei-Hao Wu, Yu-Ming Lin, Chih-Hao Wang
  • Patent number: 11522074
    Abstract: A semiconductor device includes a substrate, a first semiconductor fin, a second semiconductor fin, a gate structure, a plurality of source/drain structures, a shallow trench isolation (STI) oxide, and a dielectric layer. The first semiconductor fin extends upwardly from the substrate. The second semiconductor fin extends upwardly from the substrate. The gate structure extends across the first and second semiconductor fins. The source/drain structures are on the first and second semiconductor fins. The STI oxide extends continuously between the first and second semiconductor fins and has a U-shaped profile when viewed in a cross section taken along a lengthwise direction of the gate structure. The dielectric layer is partially embedded in the STI oxide and has a U-shaped profile when viewed in the cross section taken along the lengthwise direction of the gate structure.
    Type: Grant
    Filed: March 12, 2021
    Date of Patent: December 6, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Kuo-Cheng Ching, Kuan-Lun Cheng, Chih-Hao Wang, Keng-Chu Lin, Shi-Ning Ju
  • Publication number: 20220384589
    Abstract: A method for forming a semiconductor transistor device includes forming a channel structure, a gate structure, a first source/drain epitaxial structure, a second source/drain epitaxial structure, a gate contact, and a back-side source/drain contact. The channel structure is formed by forming a stack of semiconductor layers. The gate structure is formed wrapping around the channel structure. The first source/drain epitaxial structure and the second source/drain epitaxial structure are formed on opposite endings of the channel structure. The gate contact is formed on the gate structure. The back-side source/drain contact is formed under the first source/drain epitaxial structure. The second source/drain epitaxial structure is formed to have a concave bottom surface.
    Type: Application
    Filed: August 9, 2022
    Publication date: December 1, 2022
    Inventors: Huan-Chieh Su, Cheng-Chi Chuang, Chih-Hao Wang, Kuo-Cheng Chiang
  • Publication number: 20220384590
    Abstract: A semiconductor structure includes an epitaxial region having a front side and a backside. The semiconductor structure includes an amorphous layer formed over the backside of the epitaxial region, wherein the amorphous layer includes silicon. The semiconductor structure includes a first silicide layer formed over the amorphous layer. The semiconductor structure includes a first metal contact formed over the first silicide layer.
    Type: Application
    Filed: May 26, 2021
    Publication date: December 1, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shih-Chuan Chiu, Huan-Chieh Su, Pei-Yu Wang, Cheng-Chi Chuang, Chun-Yuan Chen, Li-Zhen Yu, Chia-Hao Chang, Yu-Ming Lin, Chih-Hao Wang
  • Publication number: 20220384264
    Abstract: Semiconductor device structures are provided. The semiconductor device structure includes a substrate and a first fin structure protruding from the substrate. The semiconductor device structure further includes an isolation layer formed around the first fin structure and covering a sidewall of the first fin structure and a gate stack formed over the first fin structure and the isolation layer. The semiconductor device structure further includes a first source/drain structure formed over the first fin structure and spaced apart from the gate stack and a contact structure formed over the first source/drain structure. The semiconductor device structure includes a dielectric structure formed through the contact structure. In addition, the contact structure and the dielectric structure has a first slope interface that slopes downwardly from a top surface of the contact structure to a top surface of the isolation layer.
    Type: Application
    Filed: August 9, 2022
    Publication date: December 1, 2022
    Inventors: Lin-Yu HUANG, Sheng-Tsung WANG, Jia-Chuan YOU, Chia-Hao CHANG, Tien-Lu LIN, Yu-Ming LIN, Chih-Hao WANG
  • Publication number: 20220384435
    Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a stack of semiconductor layers spaced apart from and aligned with each other, a first source/drain epitaxial feature in contact with a first one or more semiconductor layers of the stack of semiconductor layers, and a second source/drain epitaxial feature disposed over the first source/drain epitaxial feature. The second source/drain epitaxial feature is in contact with a second one or more semiconductor layers of the stack of semiconductor layers. The structure further includes a first dielectric material disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature and a first liner disposed between the first source/drain epitaxial feature and the second source/drain epitaxial feature. The first liner is in contact with the first source/drain epitaxial feature and the first dielectric material.
    Type: Application
    Filed: August 10, 2022
    Publication date: December 1, 2022
    Inventors: Shih-Cheng CHEN, Zhi-Chang LIN, Jung-Hung CHANG, Lo-Heng CHANG, Chien Ning YAO, Kuo-Cheng CHIANG, Chih-Hao WANG
  • Publication number: 20220381978
    Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes a photonic die, an encapsulant and a wave guide structure. The photonic die includes: a substrate, having a wave guide pattern formed at front surface; and a dielectric layer, covering the front surface of the substrate, and having an opening overlapped with an end portion of the wave guide pattern. The encapsulant laterally encapsulates the photonic die. The wave guide structure lies on the encapsulant and the photonic die, and extends into the opening of the dielectric layer, to be optically coupled to the wave guide pattern.
    Type: Application
    Filed: August 9, 2022
    Publication date: December 1, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Chieh Chang, Chung-Hao Tsai, Chen-Hua Yu, Chuei-Tang Wang
  • Publication number: 20220379225
    Abstract: The present invention provides a method to establish cloned game accounts, when an auction information is posted on the game account trading platform, the game account trading platform will establish a testing game interface according to the game interface under the relevant game account, and generate a cloned game account based on the game objects, so that the buyer user primary account can enter this testing game interface to test the cloned game account.
    Type: Application
    Filed: November 2, 2019
    Publication date: December 1, 2022
    Inventors: Chih-hao CHIEN, Cheng-yu WANG, Wan-chen WU
  • Publication number: 20220384602
    Abstract: An IC structure includes a source epitaxial structure, a drain epitaxial structure, a first silicide region, a second silicide region, a source contact, a backside via rail, a drain contact, and a front-side interconnection structure. The first silicide region is on a front-side surface, a first sidewall of the source epitaxial structure, and a second sidewall of the source epitaxial structure. The second silicide region is on a front-side surface of the drain epitaxial structure. The source contact is in contact with the first silicide region and has a protrusion extending past a backside surface of the source epitaxial structure. The backside via rail is in contact with the protrusion of the source contact. The drain contact is in contact with the second silicide region. The front-side interconnection structure is on a front-side surface of the source contact and a front-side surface of the drain contact.
    Type: Application
    Filed: August 9, 2022
    Publication date: December 1, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Huan-Chieh SU, Li-Zhen YU, Chun-Yuan CHEN, Cheng-Chi CHUANG, Shang-Wen CHANG, Yi-Hsun CHIU, Pei-Yu WANG, Ching-Wei TSAI, Chih-Hao WANG
  • Publication number: 20220384335
    Abstract: A semiconductor structure and the manufacturing method thereof are disclosed. An exemplary method includes receiving a workpiece including a dielectric layer and a contact via extending through the dielectric layer, selectively forming a metal feature on a top surface of the contact via, forming a barrier layer over the metal feature and the dielectric layer, wherein the contact via is spaced apart from the barrier layer, and, forming a metal fill layer over the barrier layer. The metal feature is formed of a first material and the barrier layer is formed of a second material different from the first material.
    Type: Application
    Filed: August 9, 2022
    Publication date: December 1, 2022
    Inventors: Lin-Yu Huang, Li-Zhen Yu, Chia-Hao Chang, Cheng-Chi Chuang, Kuan-Lun Cheng, Chih-Hao Wang
  • Publication number: 20220384429
    Abstract: Gate cutting techniques disclosed herein form gate isolation fins to isolate metal gates of multigate devices from one another before forming the multigate devices, and in particular, before forming the metal gates of the multigate devices. An exemplary device includes a first multigate device having first source/drain features and a first metal gate that surrounds a first channel layer and a second multigate device having second source/drain features and a second metal gate that surrounds a second channel layer. A gate isolation fin, which separates the first metal gate and the second metal gate, includes a first dielectric layer having a first dielectric constant and a second dielectric layer having a second dielectric constant disposed over the first dielectric layer. The second dielectric constant is less than the first dielectric constant. A gate isolation end cap may be disposed on the gate isolation fin to provide additional isolation.
    Type: Application
    Filed: August 10, 2022
    Publication date: December 1, 2022
    Inventors: Kuo-Cheng Chiang, Shi Ning Ju, Guan-Lin Chen, Kuan-Ting Pan, Chih-Hao Wang
  • Publication number: 20220384434
    Abstract: A semiconductor device structure is provided. The device includes one or more first semiconductor layers, each first semiconductor layer of the one or more first semiconductor layers is surrounded by a first intermixed layer, wherein the first intermixed layer comprises a first material and a second material.
    Type: Application
    Filed: August 9, 2022
    Publication date: December 1, 2022
    Inventors: Mao-Lin HUANG, Lung-Kun CHU, Chung-Wei HSU, Jia-Ni YU, Kuo-Cheng CHIANG, Kuan-Lun CHENG, Chih-Hao WANG
  • Patent number: 11515216
    Abstract: A semiconductor structure is received that has a first and second fins. A first epitaxial feature is formed on the first fin and has a first type dopant. A first capping layer is formed over the first epitaxial feature. A second epitaxial feature is formed on the second fin and has a second type dopant different from the first type dopant. A first metal is deposited on the second epitaxial feature and on the first capping layer. A first silicide layer is formed from the first metal and the second epitaxial feature, and a second capping layer is formed from the first metal and the first capping layer. The second capping layer is selectively removed. A second metal is deposited on the first epitaxial feature and over the second epitaxial feature. A second silicide layer is formed from the second metal and the first epitaxial feature.
    Type: Grant
    Filed: February 3, 2021
    Date of Patent: November 29, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shih-Cheng Chen, Chun-Hsiung Lin, Chih-Hao Wang
  • Publication number: 20220376072
    Abstract: A device includes a first channel layer over a semiconductor substrate, a second channel layer over the first channel layer, and a third channel layer over the second channel layer. The channel layers each connects a first and a second source/drain along a first direction. The device also includes a first gate portion between the first and second channel layers; a second gate portion between the second and third channel layers; a first inner spacer between the first and second channel layers and between the first gate portion and the first source/drain; and a second inner spacer between the second and third channel layers and between the second gate portion and the first source/drain. The first and second gate portions have substantially the same gate lengths along the first direction. The first inner spacer has a width along the first direction that is greater than the second inner spacer has.
    Type: Application
    Filed: July 26, 2022
    Publication date: November 24, 2022
    Inventors: Jui-Chien Huang, Kuo-Cheng Chiang, Chih-Hao Wang, Shi Ning Ju, Guan-Lin Chen
  • Publication number: 20220374952
    Abstract: The present invention is publish a method and system for game account valuation, through the establishment of a game account trading platform, provide different game accounts for valuation, acquisition and consignment, seller users can choose a suitable plan according to their personal needs, and through the management of the game account trading platform, increase the credibility and security of transaction information, and also can reduce the impact on the value of game data.
    Type: Application
    Filed: November 2, 2019
    Publication date: November 24, 2022
    Inventors: Chih-hao CHIEN, Cheng-yu WANG, Wan-chen WU
  • Publication number: 20220375850
    Abstract: A semiconductor device structure, along with methods of forming such, are described. The semiconductor device structure includes a device, a first dielectric material disposed over the device, and an opening is formed in the first dielectric material. The semiconductor device structure further includes a conductive structure disposed in the opening, and the conductive structure includes a first sidewall. The semiconductor device structure further includes a surrounding structure disposed in the opening, and the surrounding structure surrounds the first sidewall of the conductive structure. The surrounding structure includes a first spacer layer and a second spacer layer adjacent the first spacer layer. The first spacer layer is separated from the second spacer layer by an air gap.
    Type: Application
    Filed: July 27, 2022
    Publication date: November 24, 2022
    Inventors: LIN-YU HUANG, LI-ZHEN YU, CHIA-HAO CHANG, CHENG-CHI CHUANG, KUAN-LUN CHENG, CHIH-HAO WANG
  • Publication number: 20220376079
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a fin spacer alongside a fin structure, a source/drain structure over the fin structure, and a salicide layer along a surface of the source/drain structure. A bottom portion of the salicide layer is in contact with the fin spacer. The semiconductor device structure also includes a capping layer over the salicide layer. A portion of the capping layer directly below the bottom portion of the salicide layer is in contact with the fin spacer. The semiconductor device structure also includes a dielectric layer over the capping layer. The dielectric layer is made of a different material than the capping layer.
    Type: Application
    Filed: July 27, 2022
    Publication date: November 24, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsiang-Ku SHEN, Jin-Mu YIN, Tsung-Chieh HSIAO, Chia-Lin CHUANG, Li-Zhen YU, Dian-Hau CHEN, Shih-Wei WANG, De-Wei YU, Chien-Hao CHEN, Bo-Cyuan LU, Jr-Hung LI, Chi-On CHUI, Min-Hsiu HUNG, Hung-Yi HUANG, Chun-Cheng CHOU, Ying-Liang CHUANG, Yen-Chun HUANG, Chih-Tang PENG, Cheng-Po CHAU, Yen-Ming CHEN
  • Publication number: 20220375936
    Abstract: A semiconductor device includes first and second n-type transistors and first and second p-type transistors. The first n-type transistor includes a first channel layer and a first portion of a high-k dielectric layer over the first channel layer. The second n-type transistor includes a second channel layer and a second portion of the high-k dielectric layer over the second channel layer, wherein the second portion includes a higher amount of an n-type dipole material than the first portion. The first p-type transistor includes a third channel layer and a third portion of the high-k dielectric layer over the third channel layer. The second p-type transistor includes a fourth channel layer and a fourth portion of the high-k dielectric layer over the fourth channel layer, wherein the fourth portion includes a higher amount of a p-type dipole material than the third portion.
    Type: Application
    Filed: July 26, 2022
    Publication date: November 24, 2022
    Inventors: Lung-Kun Chu, Mao-Lin Huang, Chung-Wei Hsu, Jia-Ni Yu, Kuo-Cheng Chiang, Chih-Hao Wang
  • Patent number: 11508622
    Abstract: Semiconductor device structures are provided. The semiconductor device structure includes a substrate and a first fin structure protruding from the substrate. The semiconductor device structure further includes a gate stack formed across the first fin structure and a first source/drain structure formed over the first fin structure adjacent to the gate stack. The semiconductor device structure further includes a contact structure formed over the first source/drain structure and a dielectric structure formed through the contact structure. In addition, a bottom surface of the contact structure is wider than a top surface of the contact structure.
    Type: Grant
    Filed: December 14, 2020
    Date of Patent: November 22, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Lin-Yu Huang, Sheng-Tsung Wang, Jia-Chuan You, Chia-Hao Chang, Tien-Lu Lin, Yu-Ming Lin, Chih-Hao Wang