Abstract: An electronic apparatus with a cooling system includes a chassis having a mounting slot, and a removable device. The removable device includes a housing detachably disposed in the mounting slot; a first pump disposed in the housing, and detachably affixed to a bottom of the housing; a second pump detachably affixed to the bottom of the housing, and connected to the first pump; and a tank disposed on the first pump and configured to store cooling liquid. when the first pump or the second pump is operating, the cooling liquid in the tank flows into the first pump, and the cooling liquid in the first pump flows into the second pump.

Abstract: A method includes forming a source/drain region for a transistor, forming a first inter-layer dielectric over the source/drain region, and forming a lower source/drain contact plug over and electrically coupling to the source/drain region. The lower source/drain contact plug extends into the first inter-layer dielectric. The method further includes depositing an etch stop layer over the first inter-layer dielectric and the lower source/drain contact plug, depositing a second inter-layer dielectric over the etch stop layer, and performing an etching process to etch the second inter-layer dielectric, the etch stop layer, and an upper portion of the first inter-layer dielectric to form an opening, with a top surface and a sidewall of the lower source/drain contact plug being exposed to the opening, and forming an upper source/drain contact plug in the opening.

Abstract: A semiconductor structure includes a substrate, a conductive region, a first insulation layer, a second insulation layer, a gate structure, a low-k spacer, a gate contact, and a conductive region contact. The low-k spacer is formed between a sidewall of the gate structure and the first insulation layer. The gate contact is landed on a top surface of the gate structure. A proximity distance between a sidewall of the gate contact and the conductive region contact along a top surface of the second insulation layer is in a range of from about 4 nm to about 7 nm. A method for manufacturing a semiconductor structure is also provided.

Abstract: A method includes forming a source/drain region for a transistor, forming a first inter-layer dielectric over the source/drain region, and forming a lower source/drain contact plug over and electrically coupling to the source/drain region. The lower source/drain contact plug extends into the first inter-layer dielectric. The method further includes depositing an etch stop layer over the first inter-layer dielectric and the lower source/drain contact plug, depositing a second inter-layer dielectric over the etch stop layer, and performing an etching process to etch the second inter-layer dielectric, the etch stop layer, and an upper portion of the first inter-layer dielectric to form an opening, with a top surface and a sidewall of the lower source/drain contact plug being exposed to the opening, and forming an upper source/drain contact plug in the opening.

Abstract: A power detection circuit is provided. The protection circuit is coupled to a pad and includes a trigger circuit and a discharge circuit. The trigger circuit includes a first transistor of a first conductivity type and a second transistor, also of the first conductivity type, which are coupled in series between the pad and a ground terminal. The trigger circuit detects whether a transient even occurs on the pad. The discharge circuit is coupled between the bonding pad and the ground terminal and controlled by the trigger circuit. In response to the transient event occurring on the bonding pad, the trigger circuit generates a trigger voltage to trigger the discharge circuit to provide a discharge path between the pad and the ground terminal.

Abstract: An electrostatic discharge (ESD) protection circuit including a detection circuit, a voltage-divider element, and a discharge element is provided. The detection circuit is coupled between a first power line and a second power line. In response to an ESD event, the detection circuit enables a turn-on signal. The voltage-divider element is coupled between the first power line and a third power line and receives the turn-on signal. The discharge element is coupled between the second and third power lines. In response to the turn-on signal being enabled, the first discharge element discharges an ESD current.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a gate disposed on the semiconductor substrate. The semiconductor device structure also includes a source doped region and a drain doped region on two opposite sides of the gate. The semiconductor device structure further includes a source protective circuit and a drain protective circuit. From a side perspective view, a first drain conductive element of the source protective circuit partially overlaps a first source conductive element of the drain protective circuit.

Abstract: An electrostatic discharge (ESD) protection structure including a P-type substrate, a P-type structure, an N-type buried layer, an element active region, a P-type guard ring, and an N-type structure is provided. The P-type structure is formed in the P-type substrate and serves as an electrical contact of the P-type substrate. The N-type buried layer is formed in the P-type substrate. The element active region is formed on the N-type buried layer. The P-type guard ring is formed on the N-type buried layer and surrounds the element active region. The N-type structure is formed on the N-type buried layer and disposed between the P-type guard ring and the P-type structure.

Abstract: Multiple dry etching operations are performed to form an opening for an interconnect structure, with a wet cleaning operation performed in between the dry etching operations. This multi-step etch approach increases the effectiveness of residual material removal, which increases the quality of the interconnect structure and reduces the likelihood of under etching, both of which increase semiconductor device yield and semiconductor device performance.

Abstract: The present disclosure provides embodiments of a semiconductor device. In one embodiment, the semiconductor device includes a gate structure, a source/drain feature adjacent the gate structure, a first dielectric layer over the source/drain feature, an etch stop layer over the gate structure and the first dielectric layer, a second dielectric layer over the etch stop layer, a source/drain contact that includes a first portion extending through the first dielectric layer and a second portion extending through the etch stop layer and the second dielectric layer, a metal silicide layer disposed between the second portion and etch stop layer, and a metal nitride layer disposed between the first portion and the first dielectric layer.

Abstract: An electronic apparatus with convenient airflow-reversing function includes a chassis, a rotation mechanism, a fan device, a connection rod, and a handle. The chassis includes a bottom plate. The rotation mechanism is pivoted on the bottom plate. The fan device is disposed on the rotation mechanism. The connection rod is pivoted on the rotation mechanism. The handle is pivoted on the chassis, and is rotatably connected to the connection rod. When the handle is rotated, the connection rod drives the rotation mechanism and the fan device to rotate to change the airflow direction.

Abstract: A mounting mechanism for a server or other electronic apparatus allowing the addition of modules or devices of different sizes includes a casing having an opening. A guiding track is disposed in the casing; a slide bar is movably disposed on the guiding track; a restriction structure is disposed on the first end of the guiding track; and a locking structure can pivot on the restriction structure. When the casing is mounted on a rear rack, the slide bar is moved out of the casing via the opening, and the restriction structure and the locking structure are securely fastened to the frame.

Abstract: An electronic apparatus with convenient airflow-reversing function includes a chassis, a rotation mechanism, a fan device, a connection rod, and a handle. The chassis includes a bottom plate. The rotation mechanism is pivoted on the bottom plate. The fan device is disposed on the rotation mechanism. The connection rod is pivoted on the rotation mechanism. The handle is pivoted on the chassis, and is rotatably connected to the connection rod. When the handle is rotated, the connection rod drives the rotation mechanism and the fan device to rotate to change the airflow direction.

Abstract: An electronic apparatus with convenient airflow-reversing function includes a chassis, a rotation mechanism, a fan device, a connection rod, and a handle. The chassis includes a bottom plate. The rotation mechanism is pivoted on the bottom plate. The fan device is disposed on the rotation mechanism. The connection rod is pivoted on the rotation mechanism. The handle is pivoted on the chassis, and is rotatably connected to the connection rod. When the handle is rotated, the connection rod drives the rotation mechanism and the fan device to rotate to change the airflow direction.

Abstract: An electrostatic discharge (ESD) protection circuit including a detection circuit, a voltage-divider element, and a discharge element is provided. The detection circuit is coupled between a first power line and a second power line. In response to an ESD event, the detection circuit enables a turn-on signal. The voltage-divider element is coupled between the first power line and a third power line and receives the turn-on signal. The discharge element is coupled between the second and third power lines. In response to the turn-on signal being enabled, the first discharge element discharges an ESD current.

Abstract: A rack device for mounting server in a 2-post or in a 4-post frame includes a fixture rack, a sliding rack, a connection rack, and a handle. The fixture rack is affixed to a casing. The sliding rack is slidably disposed on the fixture rack. The connection rack is pivoted on one end of the sliding rack. The handle is pivoted on the fixture rack about a first shaft. When the casing is mounted on a 2-post frame, an end of the fixture rack is affixed to a main post, and the sliding rack is at a storage position. When the casing is mounted on a 4-post frame, the end of the fixture rack is affixed to a rear post, the sliding rack is extended to an extension position relative to the fixture rack, and the connection rack is affixed to a front post.

Abstract: A semiconductor structure, including a substrate, a first well, a second well, a first doped region, a second doped region, a first gate structure, a first insulating layer, and a first field plate structure. The first and second wells are disposed in the substrate. The first doped region is disposed in the first well. The second doped region is disposed in the second well. The first gate structure is disposed between the first and second doped regions. The first insulating layer covers a portion of the first well and a portion of the first gate structure. The first field plate structure is disposed on the first insulating layer, and it partially overlaps the first gate structure. Wherein the first field plate structure is segmented into a first partial field plate and a second partial field plate separated from each other along a first direction.

Abstract: A method includes forming a dummy gate structure across a fin, in which the dummy gate structure has a dummy gate dielectric layer and a dummy gate electrode, forming gate spacers on sidewalls of the dummy gate structure, forming source/drain epitaxial structures on sides of the dummy gate structure, performing a first etch process to the dummy gate electrode such that a recessed dummy gate electrode remains over the fin, performing a second etch process to the gate spacers such that recessed gate spacers remain over the sidewalls of the dummy gate structure, removing the recessed dummy gate electrode and the dummy gate dielectric layer after the second etch process to form a recess between the recessed gate spacers, forming a gate structure overfilling the recess, and performing a third etch process to the gate structure such that a recessed gate structure remains between the recessed gate spacers.

Abstract: A mounting mechanism for a server or other electronic apparatus allowing the addition of modules or devices of different sizes includes a casing having an opening. A guiding track is disposed in the casing; a slide bar is movably disposed on the guiding track; a restriction structure is disposed on the first end of the guiding track; and a locking structure can pivot on the restriction structure. When the casing is mounted on a rear rack, the slide bar is moved out of the casing via the opening, and the restriction structure and the locking structure are securely fastened to the frame.

Abstract: An electronic apparatus with a cooling system includes a chassis having a mounting slot, and a removable device. The removable device includes a housing detachably disposed in the mounting slot; a first pump disposed in the housing, and detachably affixed to a bottom of the housing; a second pump detachably affixed to the bottom of the housing, and connected to the first pump; and a tank disposed on the first pump and configured to store cooling liquid. when the first pump or the second pump is operating, the cooling liquid in the tank flows into the first pump, and the cooling liquid in the first pump flows into the second pump.