Abstract: A method includes forming a first semiconductor fin and a second semiconductor fin in a substrate, the first semiconductor fin adjacent the second semiconductor fin, forming a dummy gate structure extending over the first semiconductor fin and the second semiconductor fin, depositing a first dielectric material surrounding the dummy gate structure, replacing the dummy gate structure with a first metal gate structure, performing an etching process on the first metal gate structure and on the first dielectric material to form a first recess in the first metal gate structure and a second recess in the first dielectric material, wherein the first recess extends into the substrate, and wherein the second recess is disposed between the first semiconductor fin and the second semiconductor fin, and depositing a second dielectric material within the first recess.

Abstract: In a method of manufacturing a semiconductor device, a fin structure protruding from an isolation insulating layer disposed over a substrate is formed, a sacrificial gate dielectric layer is formed over the fin structure, a polysilicon layer is formed over the sacrificial gate dielectric layer, a mask pattern is formed over the polysilicon layer, and the polysilicon layer is patterned into a sacrificial gate electrode using the mask pattern as an etching mask. The sacrificial gate electrode has a narrow portion above a level of a top of the fin structure such that a width of the sacrificial gate electrode decreases, takes a local minimum, and then increases from the top of the fin structure.

Abstract: A ventilation assembly (200) includes a frame unit (100) and a cover body (60). The frame unit (100) includes two frame assemblies (10) and two closing plates (30) connected between the frame assemblies (10). Each frame assembly (10) includes two frame seats (11) and outer and inner side plates (12, 13) cooperatively defining a tortuous passage (14). Each frame assembly (10) further includes first and second air vents (15, 16). The cover body (60) is connected to and cooperates with the frame assemblies (10) and the closing plates (30) to define an air chamber (70) configured to communicate with an opening (102) in an upper portion (1) of a building. The first air vent (15) is provided to communicate the air chamber (70) with the tortuous passage (14), and the second air vent (16) is provided to communicate the tortuous passage (14) with the atmosphere.

Abstract: A linkage mechanism includes a pivoting assembly, a cam, a sliding assembly and at least one linkage. The cam pivots coaxially with the rotating axis of the pivoting assembly. A leaning element is located on one side of the cam. A sliding frame pivots the leaning element and has at least one limiting area. The linkage includes a main body portion, a first linkage portion protruded beyond the limiting area and a second linkage portion. When the pivoting assembly drives the cam to pivot from a first position to a second position, the cam pushes against the leaning element to slide the sliding frame in a first direction relative to a plate, and the limiting area interferes with the first linkage portion of the linkage to rotate the main body portion in a first clock direction to allow the second linkage portion to provide a thrust in a second direction.

Abstract: A method includes forming a first semiconductor fin and a second semiconductor fin in a substrate, the first semiconductor fin adjacent the second semiconductor fin, forming a dummy gate structure extending over the first semiconductor fin and the second semiconductor fin, depositing a first dielectric material surrounding the dummy gate structure, replacing the dummy gate structure with a first metal gate structure, performing an etching process on the first metal gate structure and on the first dielectric material to form a first recess in the first metal gate structure and a second recess in the first dielectric material, wherein the first recess extends into the substrate, and wherein the second recess is disposed between the first semiconductor fin and the second semiconductor fin, and depositing a second dielectric material within the first recess.

Abstract: A tunnel oxide passivated contact solar cell includes a semiconductor substrate, an emitter film layer, an anti-reflective layer, a first electrode, a tunnel oxide layer, a semiconductor film layer and a second electrode. The semiconductor substrate is a first type doped semiconductor, and the first surface of the semiconductor substrate includes a zigzag structure. The emitter film layer is a second type doped semiconductor film. The anti-reflective layer is provided with a first opening. A part of the first electrode is in the first opening and electrically connected to the emitter film layer. The tunnel oxide layer has a thickness ranging from 1.3 nm to 1.6 nm, the thickness difference measured is less than 4%, and the tunnel oxide layer is made by an atomic layer deposition process. The semiconductor film layer is a first type doped semiconductor. The second electrode is electrically connected to the semiconductor film layer.

Abstract: A method includes forming a first semiconductor fin and a second semiconductor fin in a substrate, the first semiconductor fin adjacent the second semiconductor fin, forming a dummy gate structure extending over the first semiconductor fin and the second semiconductor fin, depositing a first dielectric material surrounding the dummy gate structure, replacing the dummy gate structure with a first metal gate structure, performing an etching process on the first metal gate structure and on the first dielectric material to form a first recess in the first metal gate structure and a second recess in the first dielectric material, wherein the first recess extends into the substrate, and wherein the second recess is disposed between the first semiconductor fin and the second semiconductor fin, and depositing a second dielectric material within the first recess.

Abstract: A linkage mechanism includes a pivoting assembly, a cam, a sliding assembly, and a linkage assembly. The cam pivots coaxially with the rotating axis. The sliding assembly is assembled on a plate member and has a leaning surface and a sliding slot. The linkage assembly includes a linkage passing through the sliding slot and a carrier base including at least one bump and fastened to the linkage. When the pivoting assembly drives the cam to pivot from a first position to a second position, the cam pushes against the leaning surface to slide the sliding assembly relative to the plate member in a first direction, and the linkage rotates in the sliding slot to drive the carrier base to move in a second direction, and the bump gradually enters into a cavity of a frame from leaning the frame to move the frame in a third direction.

Abstract: A linkage mechanism includes a pivoting assembly, a cam, a sliding assembly and at least one linkage. The cam pivots coaxially with the rotating axis of the pivoting assembly. A leaning element is located on one side of the cam. A sliding frame pivots the leaning element and has at least one limiting area. The linkage includes a main body portion, a first linkage portion protruded beyond the limiting area and a second linkage portion. When the pivoting assembly drives the cam to pivot from a first position to a second position, the cam pushes against the leaning element to slide the sliding frame in a first direction relative to a plate, and the limiting area interferes with the first linkage portion of the linkage to rotate the main body portion in a first clock direction to allow the second linkage portion to provide a thrust in a second direction.

Abstract: A linkage mechanism includes a pivoting assembly, a cam, a sliding assembly, and a linkage assembly. The cam pivots coaxially with the rotating axis. The sliding assembly is assembled on a plate member and has a leaning surface and a sliding slot. The linkage assembly includes a linkage passing through the sliding slot and a carrier base including at least one bump and fastened to the linkage. When the pivoting assembly drives the cam to pivot from a first position to a second position, the cam pushes against the leaning surface to slide the sliding assembly relative to the plate member in a first direction, and the linkage rotates in the sliding slot to drive the carrier base to move in a second direction, and the bump gradually enters into a cavity of a frame from leaning the frame to move the frame in a third direction.

Abstract: A method and apparatus for bonding semiconductor devices are disclosed. In an embodiment, the method may include attaching a first die to a flip head of a flip module, flipping the first die with the flip module, removing the first die from the flip module after flipping the first die, inspecting the flip head of the flip module for contamination after removing the first die, cleaning the flip head with an in situ cleaning module after inspecting the flip head, and attaching a second die to the flip head after cleaning the flip head.

Abstract: A method includes forming a first semiconductor fin and a second semiconductor fin in a substrate, the first semiconductor fin adjacent the second semiconductor fin, forming a dummy gate structure extending over the first semiconductor fin and the second semiconductor fin, depositing a first dielectric material surrounding the dummy gate structure, replacing the dummy gate structure with a first metal gate structure, performing an etching process on the first metal gate structure and on the first dielectric material to form a first recess in the first metal gate structure and a second recess in the first dielectric material, wherein the first recess extends into the substrate, and wherein the second recess is disposed between the first semiconductor fin and the second semiconductor fin, and depositing a second dielectric material within the first recess.

Abstract: A method and apparatus for bonding semiconductor devices are disclosed. In an embodiment, the method may include attaching a first die to a flip head of a flip module, flipping the first die with the flip module, removing the first die from the flip module after flipping the first die, inspecting the flip head of the flip module for contamination after removing the first die, cleaning the flip head with an in situ cleaning module after inspecting the flip head, and attaching a second die to the flip head after cleaning the flip head.

Abstract: A method and apparatus for bonding semiconductor devices are disclosed. In an embodiment, the method may include attaching a first die to a flip head of a flip module, flipping the first die with the flip module, removing the first die from the flip module after flipping the first die, inspecting the flip head of the flip module for contamination after removing the first die, cleaning the flip head with an in situ cleaning module after inspecting the flip head, and attaching a second die to the flip head after cleaning the flip head.

Abstract: A portable electronic device includes a transmission interface, a wireless communication circuit and microprocessor. The wireless communication circuit connects to a cloud server through the Internet. The microprocessor obtains firmware-version information and device-setting information of an electronic device through the transmission interface, and controls the wireless communication circuit to send the firmware-version information and the device-setting information to the cloud server.

Abstract: The present invention relates to an over-ear headphones comprising a headband, two earpiece modules connected to two ends of the headband, a holder and an adjustable microphone. Each of the two earpiece modules comprises an elastic case, a fixing baffle connected to the elastic case, a speaker connected to the fixing baffle, a back cover, a LED light plate at a bottom of the hack cover, and two transparent plates at an outside of the back cover. The speaker comprises a plate, a T-bar, a magnetic element, a cushion ring, a diaphragm, a voice coil and a protection cap having plural first holes arranged in a cross pattern at a central thereof, plural second holes surrounding the plural first holes, and plural third, fourth and fifth holes sequentially and radially arranged thereon for surrounding the plural second holes.

Abstract: A method includes forming a first semiconductor fin and a second semiconductor fin in a substrate, the first semiconductor fin adjacent the second semiconductor fin, forming a dummy gate structure extending over the first semiconductor fin and the second semiconductor fin, depositing a first dielectric material surrounding the dummy gate structure, replacing the dummy gate structure with a first metal gate structure, performing an etching process on the first metal gate structure and on the first dielectric material to form a first recess in the first metal gate structure and a second recess in the first dielectric material, wherein the first recess extends into the substrate, and wherein the second recess is disposed between the first semiconductor fin and the second semiconductor fin, and depositing a second dielectric material within the first recess.

Abstract: A method and apparatus for bonding semiconductor devices are disclosed. In an embodiment, the method may include attaching a first die to a flip head of a flip module, flipping the first die with the flip module, removing the first die from the flip module after flipping the first die, inspecting the flip head of the flip module for contamination after removing the first die, cleaning the flip head with an in situ cleaning module after inspecting the flip head, and attaching a second die to the flip head after cleaning the flip head.

Abstract: A method and apparatus for bonding semiconductor devices are disclosed. In an embodiment, the method may include attaching a first die to a flip head of a flip module, flipping the first die with the flip module, removing the first die from the flip module after flipping the first die, inspecting the flip head of the flip module for contamination after removing the first die, cleaning the flip head with an in situ cleaning module after inspecting the flip head, and attaching a second die to the flip head after cleaning the flip head.

Abstract: A linkage mechanism includes a pivot assembly, a gear assembly, and a linkage assembly. The pivot assembly pivots around a first rotation axis. The gear assembly is pivoted with the pivot assembly and moves in conjunction with the pivot assembly. The gear assembly includes a cam, and the cam pivots around a second rotation axis. The second rotation axis is not parallel to the first rotation axis. The linkage assembly is disposed at a side of the gear assembly and contacts the cam. When the pivot assembly drives the gear assembly to pivot, the linkage assembly abuts against the cam to produce a relative movement with the cam.