Abstract: A speaker device includes a first cabinet, a speaker unit, a second cabinet and a tube cabinet. The first cabinet is disposed in a casing and with a first chamber formed therein. The speaker unit is disposed in the first chamber. The second cabinet is connected to the casing and with an opening formed on the casing. The second cabinet has a second chamber formed therein and communicating with the opening. The tube cabinet connects the first cabinet and the second cabinet. The tube cabinet has a tube chamber formed therein and communicating with the first chamber and the second chamber. A sound generated by the speaker unit is enhanced in the first chamber, transmitted to the second chamber via the tube chamber and emitted out via the opening.

Abstract: An interconnection structure and method disclosed for providing an interconnection structure that includes conductive features having reduced topographic variations. The interconnection structure includes a contact pad disposed over a substrate. The contact pad includes a first layer of a first conductive material and a second layer of a second conductive material over the first layer. The first conductive material and the second conductive material are made of substantially the same material and have a first average grain size and a second average grain size that is smaller than the first average grain size. The interconnection structure also includes a passivation layer covering the substrate and the contact pad, and the passivation layer has an opening exposing the contact pad.

Abstract: A portable electronic device includes a transmission interface, a wireless communication circuit and microprocessor. The wireless communication circuit connects to a cloud server through the Internet. The microprocessor obtains firmware-version information and device-setting information of an electronic device through the transmission interface, and controls the wireless communication circuit to send the firmware-version information and the device-setting information to the cloud server.

Abstract: A linkage mechanism includes a pivot assembly, a gear assembly, and a linkage assembly. The pivot assembly pivots around a first rotation axis. The gear assembly is pivoted with the pivot assembly and moves in conjunction with the pivot assembly. The gear assembly includes a cam, and the cam pivots around a second rotation axis. The second rotation axis is not parallel to the first rotation axis. The linkage assembly is disposed at a side of the gear assembly and contacts the cam. When the pivot assembly drives the gear assembly to pivot, the linkage assembly abuts against the cam to produce a relative movement with the cam.

Abstract: The present invention provides methods and designs of enclosed-channel reactor system for manufacturing catalysts or supports. Both of the configuration designs force the gaseous precursors and purge gas flow through the channel surface of reactor. The precursors will transform to thin film or particle catalysts or supports under adequate reaction temperature, working pressure and gas concentration. The reactor body is either sealed or enclosed for isolation from atmosphere. Another method using super ALD cycles is also proposed to grow alloy catalysts or supports with controllable concentration. The catalysts prepared by the method and system in the present invention are noble metals, such as platinum, palladium, rhodium, ruthenium, iridium and osmium, or transition metals such as iron, silver, cobalt, nickel and tin, while supports are silicon oxide, aluminum oxide, zirconium oxide, cerium oxide or magnesium oxide, or refractory metals, which can be chromium, molybdenum, tungsten or tantalum.

Abstract: A method for forming a semiconductor device structure is provided. The method includes forming a spacer layer and a dielectric layer over a substrate. The spacer layer has an opening exposing the substrate, and the dielectric layer surrounds the spacer layer. The method includes forming a metal silicon nitride layer over a sidewall and a bottom surface of the opening. The method includes forming a first work function metal layer over the metal silicon nitride layer. The method includes removing a first top portion of the first work function metal layer. The method includes, after the removal of the first top portion, removing a second top portion of the metal silicon nitride layer. The method includes forming a conductive layer in the opening. The method includes removing a third top portion of the conductive layer and a fourth top portion of the metal silicon nitride layer.

Abstract: A speaker device includes a first cabinet, a speaker unit, a second cabinet and a tube cabinet. The first cabinet is disposed in a casing and with a first chamber formed therein. The speaker unit is disposed in the first chamber. The second cabinet is connected to the casing and with an opening formed on the casing. The second cabinet has a second chamber formed therein and communicating with the opening. The tube cabinet connects the first cabinet and the second cabinet. The tube cabinet has a tube chamber formed therein and communicating with the first chamber and the second chamber. A sound generated by the speaker unit is enhanced in the first chamber, transmitted to the second chamber via the tube chamber and emitted out via the opening.

Abstract: An interconnection structure and method disclosed for providing an interconnection structure that includes conductive features having reduced topographic variations. The interconnection structure includes a contact pad disposed over a substrate. The contact pad includes a first layer of a first conductive material and a second layer of a second conductive material over the first layer. The first conductive material and the second conductive material are made of substantially the same material and have a first average grain size and a second average grain size that is smaller than the first average grain size. The interconnection structure also includes a passivation layer covering the substrate and the contact pad, and the passivation layer has an opening exposing the contact pad.

Abstract: An interconnection structure and method disclosed for providing an interconnection structure that includes conductive features having reduced topographic variations. The interconnection structure includes a contact pad disposed over a substrate. The contact pad includes a first layer of a first conductive material and a second layer of a second conductive material over the first layer. The first conductive material and the second conductive material are made of substantially the same material and have a first average grain size and a second average grain size that is smaller than the first average grain size. The interconnection structure also includes a passivation layer covering the substrate and the contact pad, and the passivation layer has an opening exposing the contact pad.

Abstract: The present invention provides methods and designs of enclosed-channel reactor system for manufacturing catalysts or supports. Both of the configuration designs force the gaseous precursors and purge gas flow through the channel surface of reactor. The precursors will transform to thin film or particle catalysts or supports under adequate reaction temperature, working pressure and gas concentration. The reactor body is either sealed or enclosed for isolation from atmosphere. Another method using super ALD cycles is also proposed to grow alloy catalysts or supports with controllable concentration. The catalysts prepared by the method and system in the present invention are noble metals, such as platinum, palladium, rhodium, ruthenium, iridium and osmium, or transition metals such as iron, silver, cobalt, nickel and tin, while supports are silicon oxide, aluminum oxide, zirconium oxide, cerium oxide or magnesium oxide, or refractory metals, which can be chromium, molybdenum, tungsten or tantalum.

Abstract: The present invention provides methods and designs of enclosed-channel reactor system for manufacturing catalysts or supports. Both of the configuration designs force the gaseous precursors and purge gas flow through the channel surface of reactor. The precursors will transform to thin film or particle catalysts or supports under adequate reaction temperature, working pressure and gas concentration. The reactor body is either sealed or enclosed for isolation from atmosphere. Another method using super ALD cycles is also proposed to grow alloy catalysts or supports with controllable concentration. The catalysts prepared by the method and system in the present invention are noble metals, such as platinum, palladium, rhodium, ruthenium, iridium and osmium, or transition metals such as iron, silver, cobalt, nickel and tin, while supports are silicon oxide, aluminum oxide, zirconium oxide, cerium oxide or magnesium oxide, or refractory metals, which can be chromium, molybdenum, tungsten or tantalum.

Abstract: A method is provided for measuring remaining hydrogen capacity of hydrogen storage canister incorporating tag information. An information identification tag is attached to a hydrogen storage canister. The information identification tag contains therein at least one record of tag information indicating the hydrogen storage quantity of the hydrogen storage canister. Once the hydrogen storage quantity is read from the tag information of the information identification tag and hydrogen consumption quantity supplied from the hydrogen storage canister is detected, the hydrogen storage quantity is operated by subtracting the hydrogen consumption quantity therefrom to calculate a hydrogen residue, which is then used to update the tag information of the information identification tag or is stored for subsequent use.

Abstract: An interconnection structure and method disclosed for providing an interconnection structure that includes conductive features having reduced topographic variations. The interconnection structure includes a contact pad disposed over a substrate. The contact pad includes a first layer of a first conductive material and a second layer of a second conductive material over the first layer. The first conductive material and the second conductive material are made of substantially the same material and have a first average grain size and a second average grain size that is smaller than the first average grain size. The interconnection structure also includes a passivation layer covering the substrate and the contact pad, and the passivation layer has an opening exposing the contact pad.

Abstract: A method and system of gas refilling management for gas storage canister utilizing identification accessing control includes an identification information transmission device, a control device, and a gas refilling equipment, which are applicable for management of refilling of at least one storage canister. The storage canister is provided with an information identification label, which contains at least one record of canister information. By using the identification information transmission device to first read the information contained in the label of a storage canister, the control device may then set a refilling condition based on which the gas refilling equipment carries out a refilling operation to the storage canister, so as to suit for management of refilling various types of gas storage canisters to provide the best performance in a practical application.

Abstract: The present invention provides methods and designs of enclosed-channel reactor system for manufacturing catalysts or supports. Both of the configuration designs force the gaseous precursors and purge gas flow through the channel surface of reactor. The precursors will transform to thin film or particle catalysts or supports under adequate reaction temperature, working pressure and gas concentration. The reactor body is either sealed or enclosed for isolation from atmosphere. Another method using super ALD cycles is also proposed to grow alloy catalysts or supports with controllable concentration. The catalysts prepared by the method and system in the present invention are noble metals, such as platinum, palladium, rhodium, ruthenium, iridium and osmium, or transition metals such as iron, silver, cobalt, nickel and tin, while supports are silicon oxide, aluminum oxide, zirconium oxide, cerium oxide or magnesium oxide, or refractory metals, which can be chromium, molybdenum, tungsten or tantalum.

Abstract: A method for fabricating a carrier is disclosed, wherein the carrier is applied for a microelectromechanical sensing device. The method includes the steps of: providing a first substrate, wherein the first substrate includes a first metal layer, a first dielectric layer, and a first opening; providing a second substrate, wherein the second substrate includes a second metal layer, a second dielectric layer, and a second opening; providing a reticular element; pressing the first substrate, the reticular element, and the second substrate to form a composite substrate, wherein the first opening and the second opening form a hole, and the reticular element is positioned in the hole; and forming at least one conductive via in the composite substrate.

Abstract: Systems and methods for improving the performance and reliability of flash memory solid state drive devices are described herein. A flash memory array component stores data. A memory hierarchy component transfers data between the host and the flash memory array component. The memory hierarchy component includes a level one (“L1”) cache coupled to a merge buffer, the flash memory array component, and the host. The merge buffer is coupled to the flash memory array component. The L1 cache and merge buffer include volatile memory, and the host is coupled to the merge buffer and flash memory array component. The memory hierarchy component includes a write component and a read component. The write component writes data to at least one of the L1 cache, merge buffer, or flash memory array component. The read component reads data from at least one of the L1 cache, merge buffer, or flash memory array component.

Abstract: Control method and power controller suitable for a switched mode power supply with a power switch are provided. An ON time of the power switch is recorded. An estimated OFF time is provided based on the ON time. The estimated OFF time is in positive correlation with the ON time. The power switch is turned ON after the elapse of the estimated OFF time.

Abstract: A method is provided for measuring remaining hydrogen capacity of hydrogen storage canister incorporating tag information. An information identification tag is attached to a hydrogen storage canister. The information identification tag contains therein at least one record of tag information indicating the hydrogen storage quantity of the hydrogen storage canister. Once the hydrogen storage quantity is read from the tag information of the information identification tag and hydrogen consumption quantity supplied from the hydrogen storage canister is detected, the hydrogen storage quantity is operated by subtracting the hydrogen consumption quantity therefrom to calculate a hydrogen residue, which is then used to update the tag information of the information identification tag or is stored for subsequent use.

Abstract: A method and system of gas refilling management for gas storage canister utilizing identification accessing control includes an identification information transmission device, a control device, and a gas refilling equipment, which are applicable for management of refilling of at least one storage canister. The storage canister is provided with an information identification label, which contains at least one record of canister information. By using the identification information transmission device to first read the information contained in the label of a storage canister, the control device may then set a refilling condition based on which the gas refilling equipment carries out a refilling operation to the storage canister, so as to suit for management of refilling various types of gas storage canisters to provide the best performance in a practical application.