Patents by Inventor Chih-Hung Lu

Chih-Hung Lu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210098399
    Abstract: Semiconductor devices, integrated circuits and methods of forming the same are provided. In one embodiment, a method includes depositing a first dielectric layer over a metal pad disposed over a workpiece, forming a first opening in the first dielectric layer to expose a portion of the metal pad, after the forming of the first opening, forming a second dielectric layer over the exposed portion of the metal pad, depositing a first polymeric material over the second dielectric layer, forming a second opening through the first polymeric material and the second dielectric layer to expose the metal pad, and forming a bump feature over the exposed metal pad.
    Type: Application
    Filed: July 23, 2020
    Publication date: April 1, 2021
    Inventors: Chih-Fan Huang, Hui-Chi Chen, Chih-Sheng Li, Chih-Hung Lu, Dian-Hau Chen, Yen-Ming Chen
  • Publication number: 20200066587
    Abstract: A method for forming a semiconductor device structure includes providing a substrate and forming a gate electrode on the substrate. A first contact structure is formed in and on the gate electrode. The first contact structure comprises a first portion and a second portion. The first portion is formed in the gate electrode, and the second portion is formed on the first portion.
    Type: Application
    Filed: November 4, 2019
    Publication date: February 27, 2020
    Inventors: Guo-Chiang CHI, Chia-Der CHANG, Chih-Hung LU, Wei-Chin CHEN
  • Patent number: 10468299
    Abstract: A method for forming a semiconductor device structure includes providing a substrate and forming a gate electrode on the substrate. A first contact structure is formed in and on the gate electrode. The first contact structure comprises a first portion and a second portion. The first portion is formed in the gate electrode, and the second portion is formed on the first portion.
    Type: Grant
    Filed: March 2, 2018
    Date of Patent: November 5, 2019
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Guo-Chiang Chi, Chia-Der Chang, Chih-Hung Lu, Wei-Chin Chen
  • Patent number: 10090397
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a gate stack positioned over the semiconductor substrate. The semiconductor device structure includes spacers positioned over sidewalls of the gate stack. The semiconductor device structure includes a first protective layer positioned between the gate stack and the spacers and between the spacers and the semiconductor substrate. The semiconductor device structure includes a second protective layer positioned between the spacers and the first protective layer. The first protective layer and the second protective layer include different materials.
    Type: Grant
    Filed: August 29, 2014
    Date of Patent: October 2, 2018
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Ming-Chang Lee, Chia-Der Chang, Chih-Hung Lu, Chung-Tsun Sun, Chung-Wei Hung
  • Publication number: 20180197775
    Abstract: A method for forming a semiconductor device structure includes providing a substrate and forming a gate electrode on the substrate. A first contact structure is formed in and on the gate electrode. The first contact structure comprises a first portion and a second portion. The first portion is formed in the gate electrode, and the second portion is formed on the first portion.
    Type: Application
    Filed: March 2, 2018
    Publication date: July 12, 2018
    Inventors: Guo-Chiang CHI, Chia-Der CHANG, Chih-Hung LU, Wei-Chin CHEN
  • Patent number: 9947577
    Abstract: A method of forming an integrated circuit that includes providing a substrate, a metal layer over the substrate, and a first dielectric layer over the metal layer. The first dielectric layer includes a via. A sidewall layer that includes a silicon compound is in the via. A second dielectric layer is over the sidewall layer and an ultra-thick metal (UTM) layer is in the via.
    Type: Grant
    Filed: November 18, 2016
    Date of Patent: April 17, 2018
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Hung Lu, Ching-Chen Hao
  • Patent number: 9911650
    Abstract: A method for forming a semiconductor device structure includes providing a substrate and forming a gate electrode on the substrate. A first contact structure is formed in and on the gate electrode. The first contact structure comprises a first portion and a second portion. The first portion is formed in the gate electrode, and the second portion is formed on the first portion.
    Type: Grant
    Filed: October 20, 2016
    Date of Patent: March 6, 2018
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Guo-Chiang Chi, Chia-Der Chang, Chih-Hung Lu, Wei-Chin Chen
  • Patent number: 9666483
    Abstract: An integrated circuit including a first transistor having a first gate dielectric layer with a first thickness. The integrated circuit also includes a second transistor having a second gate dielectric layer with a second thickness and the second transistor is configured to electrically connect to the first transistor. The integrated circuit also includes a third transistor having a third gate dielectric layer with a third thickness and the third transistor is configured to electrically connect to at least one of the first transistor or the second transistor. The first thickness, the second thickness and the third thickness of the integrated circuit are all different.
    Type: Grant
    Filed: February 10, 2012
    Date of Patent: May 30, 2017
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Hung Lu, Song-Bor Lee, Ching-Kun Huang, Ching-Chen Hao
  • Patent number: 9645681
    Abstract: Optical touch display system includes a light source, a reflector, an image sensor, and a processing device. The light source emits light to at least one object directly and emits light to the at least one object via the reflector at the same time. Then the image sensor receives light reflected from the at least one object directly and light reflected via the reflector simultaneously to form a set of imaging objects which have similar color parameters on an image. Then the processing device produces a set of still image parameters of the image objects such as gravity centers and border boundaries. Based on the still image parameters, the processing device determines the coordinates of the least one object on the optical touch display.
    Type: Grant
    Filed: November 3, 2011
    Date of Patent: May 9, 2017
    Assignee: PixArt Imaging Inc.
    Inventors: Chih-Hung Lu, Hsin-Chia Chen, En-Feng Hsu, Chi-Chieh Liao, Ren-Hau Gu, Shu-Sian Yang, Yu-Hao Huang
  • Publication number: 20170069530
    Abstract: A method of forming an integrated circuit that includes providing a substrate, a metal layer over the substrate, and a first dielectric layer over the metal layer. The first dielectric layer includes a via. A sidewall layer that includes a silicon compound is in the via. A second dielectric layer is over the sidewall layer and an ultra-thick metal (UTM) layer is in the via.
    Type: Application
    Filed: November 18, 2016
    Publication date: March 9, 2017
    Inventors: Chih-Hung LU, Ching-Chen HAO
  • Publication number: 20170040215
    Abstract: A method for forming a semiconductor device structure includes providing a substrate and forming a gate electrode on the substrate. A first contact structure is formed in and on the gate electrode. The first contact structure comprises a first portion and a second portion. The first portion is formed in the gate electrode, and the second portion is formed on the first portion.
    Type: Application
    Filed: October 20, 2016
    Publication date: February 9, 2017
    Inventors: Guo-Chiang CHI, Chia-Der CHANG, Chih-Hung LU, Wei-Chin CHEN
  • Publication number: 20160364618
    Abstract: A nocturnal vehicle counting method based on a mixed particle filter is introduced in that, in a nocturnal environment, a rear lamp of a vehicle is the most remarkable feature of the vehicle and forms a high-brightness region of an image of the vehicle. The method involves detecting the high-brightness region of an image of the vehicle to thereby detect the rear lamp of the vehicle. The method further involves operating a particle filter structure which, coupled with the detection of a moving high-brightness region, can detect and track the rear lamp of the vehicle simultaneously, thereby enhancing competitiveness and incurring low costs.
    Type: Application
    Filed: June 9, 2015
    Publication date: December 15, 2016
    Inventors: SHIH-SHINH HUANG, SHIH-CHE CHIEN, CHIH-HUNG LU
  • Patent number: 9502346
    Abstract: An integrated circuit that includes a substrate, a metal layer over the substrate and a first dielectric layer over the metal layer. The first dielectric layer includes a via. A sidewall layer that includes a silicon compound is in the via. A second dielectric layer is over the sidewall layer and an ultra-thick metal (UTM) layer is in the via.
    Type: Grant
    Filed: August 16, 2013
    Date of Patent: November 22, 2016
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Hung Lu, Ching-Chen Hao
  • Publication number: 20160328088
    Abstract: A controlling method for a sensing system includes the following step. Whether a specific function is started is determined according to the amount of pixels of a total pattern acquired by sensing a first object. In an embodiment of the present invention, the step of determining whether the specific function is started according to the amount of pixels of the total pattern is the step of determining whether the specific function is started according to the amount of pixels of the total pattern and the length of time to successively acquire the total pattern. Accordingly, it is more convenient for a user to use the sensing system having the said controlling method.
    Type: Application
    Filed: July 20, 2016
    Publication date: November 10, 2016
    Inventors: Cho-Yi Lin, Chih-Hung Lu
  • Patent number: 9478626
    Abstract: A semiconductor device structure and method for forming the semiconductor device structure are provided. The semiconductor device structure includes a substrate and a gate electrode formed on the substrate. The semiconductor device structure also includes a first contact structure including a first portion and a second portion. The first portion of the first contact structure is formed in the gate electrode, and the second portion is formed on the first portion.
    Type: Grant
    Filed: December 19, 2014
    Date of Patent: October 25, 2016
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Guo-Chiang Chi, Chia-Der Chang, Chih-Hung Lu, Wei-Chin Chen
  • Publication number: 20160233148
    Abstract: A semiconductor package structure includes a flexible substrate, a semiconductor element, a printed circuit board, and first and second heat dissipation elements. The flexible substrate includes first and second insulation layers, and a first wiring layer including input and output ends. The semiconductor element is connected to the first wiring layer. The printed circuit board is disposed adjacent to the input end and includes a second wiring layer connected to the first wiring layer. The first heat dissipation element is connected to the printed circuit board and spaced apart from the second wiring layer. The second heat dissipation element has a main portion and a first extension portion extending to contact the first heat dissipation element.
    Type: Application
    Filed: September 9, 2015
    Publication date: August 11, 2016
    Inventors: Chih-Hung LU, Shih-Fong LIN
  • Publication number: 20160181386
    Abstract: A semiconductor device structure and method for forming the semiconductor device structure are provided. The semiconductor device structure includes a substrate and a gate electrode formed on the substrate. The semiconductor device structure also includes a first contact structure including a first portion and a second portion. The first portion of the first contact structure is formed in the gate electrode, and the second portion is formed on the first portion.
    Type: Application
    Filed: December 19, 2014
    Publication date: June 23, 2016
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
    Inventors: Guo-Chiang CHI, Chia-Der CHANG, Chih-Hung LU, Wei-Chin CHEN
  • Publication number: 20160064516
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a gate stack positioned over the semiconductor substrate. The semiconductor device structure includes spacers positioned over sidewalls of the gate stack. The semiconductor device structure includes a first protective layer positioned between the gate stack and the spacers and between the spacers and the semiconductor substrate. The semiconductor device structure includes a second protective layer positioned between the spacers and the first protective layer. The first protective layer and the second protective layer include different materials.
    Type: Application
    Filed: August 29, 2014
    Publication date: March 3, 2016
    Inventors: Ming-Chang LEE, Chia-Der CHANG, Chih-Hung LU, Chung-Tsun SUN, Chung-Wei HUNG
  • Patent number: 9223386
    Abstract: An interactive pointing device capable of switching capture ranges includes an image capturing element and a processing unit. The image capturing element operates in a first capture range or a second capture range. The image capturing element is used for capturing a light source, and outputting an image signal. When a distance from the interactive pointing device to the light source is smaller than a reference value, the processing unit controls the image capturing element to detect the light source with the first capture range, and the processing unit converts the image signal into a first coordinate data. When the distance is greater than the reference value, the processing unit controls the image capturing element to detect the light source with the second capture range, and the processing unit converts the image signal into a second coordinate data.
    Type: Grant
    Filed: September 16, 2010
    Date of Patent: December 29, 2015
    Assignee: PIXART IMAGING INC.
    Inventors: Chih Hung Lu, En Feng Hsu, Shih Chi Chien, Ming Tsan Kao, Hsin Chia Chen, Chao Chien Huang, Cho Yi Lin
  • Patent number: 9176603
    Abstract: An interactive pointing device capable of switching capture ranges includes an image capturing element and a processing unit. The image capturing element is used for capturing an optical signal, and outputting an image signal. The processing unit is used for determining a switching signal, and responsible for processing and analyzing the image signal. Through the determination about the switching signal and the coordinate conversion of the image signal by an arithmetic unit, the interactive pointing device capable of switching capture ranges is enabled to be operable in hosts with different resolutions.
    Type: Grant
    Filed: September 13, 2010
    Date of Patent: November 3, 2015
    Assignee: PIXART IMAGING INC.
    Inventors: Chih Hung Lu, En Feng Hsu, Hsin Chia Chen, Chao Chien Huang, Cho Yi Lin