Abstract: An electronic device includes a substrate, a side wiring, a protective film, and a first filler. The substrate has a first surface, a second surface, and a side surface connected between the first surface and the second surface. The side wiring is disposed on the substrate and extends from the first surface to the second surface through the side surface. The protective film is disposed on the side wiring. The side wiring is sandwiched between the substrate and the protective film. An edge of the protective film extends beyond a side wall of the side wiring, and the protective film, the side wall of the side wiring, and the substrate define a gap. The first filler is disposed on the protective film and in the gap, wherein the first filler includes a first material and a plurality of particles mixed within the first material.

Abstract: Some embodiments relate to an integrated chip including a first metal insulator metal (MIM) capacitor disposed over a substrate. The integrated chip further includes a second MIM capacitor disposed over the substrate. The first MIM capacitor has a first outer sidewall facing a second outer sidewall of the second MIM capacitor. A dielectric structure is arranged over and laterally between the first MIM capacitor and the second MIM capacitor. A base conductive layer is arranged between the first MIM capacitor and the second MIM capacitor and has a substantially flat upper surface. A metal core arranged on the substantially flat upper surface of the base conductive layer.

Abstract: A panel device including a substrate, a conductor pad, a turning wire, and a circuit board is provided. The substrate has a first surface and a second surface connected to the first surface while a normal direction of the second surface is different from a normal direction of the first surface. The conductor pad is disposed on the first surface of the substrate. The turning wire is disposed on the substrate and extends from the first surface to the second surface. The turning wire includes a wiring layer in contact with the conductor pad and a wire covering layer covering the wiring layer. The circuit board is bonded to and electrically connected to the wire covering layer. A manufacturing method of a panel device is also provided herein.

Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.

Abstract: A high electron mobility transistor device including a channel layer, a first barrier layer, and a P-type gallium nitride layer is provided. The first barrier layer is disposed on the channel layer. The P-type gallium nitride layer is disposed on the first barrier layer. The first thickness of the first barrier layer located directly under the P-type gallium nitride layer is greater than the second thickness of the first barrier layer located on two sides of the P-type gallium nitride layer.

Abstract: A method for generating virtual reality images and used in a light field near-eye display includes steps of: shifting a display image according to at least one change vector of a plurality of eye movement parameters, and calculating a compensation mask according to a simulated image and superimposing the compensation mask on a target image to generate a superimposed target image, wherein brightness distributions of the simulated image and the compensation mask are opposite to each other. The light field near-eye display is also provided. In this way, the light field near-eye display for generating virtual reality images and the method thereof can achieve the purpose of improving the uniformity of the image and expanding the eye box size.

Abstract: A semiconductor assembly includes a semiconductor device and a seal ring. The seal ring is disposed adjacent to the semiconductor device. The seal ring includes a first side surface inclined from a top surface of the seal ring toward a bottom surface of the seal ring, wherein a lateral width of the bottom surface of the seal ring is larger than a lateral width of the top surface of the seal ring; and a first metal line disposed in the seal ring and comprising a second side surface adjacent to the first side surface of the seal ring. A maximum distance between the second side surface of the first metal line and the first side surface of the seal ring is in a range of 5 ?m to 30 ?m.

Abstract: A capacitive hover sensing module includes: a capacitive touch panel for sensing a self-capacitive projective position of a conductor object on the capacitive touch panel; a touch driver chip drives the capacitive touch panel for measuring a sensing signal induced by the conductor object, and generates and outputs a sensing data accordingly; a processor receives the sensing data output and thereby generates the self-capacitive projective position of the conductor object on the capacitive touch panel when the conductor object hovers over the capacitive touch panel, the processor also generates a hover value related to a vertical distance between the conductor object and the capacitive touch panel, wherein the capacitive hover sensing module transmits the self-capacitive projective position and the hover value to a display device to display the self-capacitive projective position of the conductor object on the capacitive touch panel through a corresponding positioning feedback icon.

Abstract: The present disclosure provides a semiconductor structure and a method of manufacturing a semiconductor structure. The semiconductor structure includes a first set of photoresist structures, a second photoresist structure, and a third photoresist structure. The first set of photoresist structures is disposed along a first orientation. The second photoresist structure is disposed non-parallel to the first orientation. The third photoresist structure is disposed non-parallel to the first orientation. The second photoresist structure and the third photoresist structure contact at least one of the first set of photoresist structures.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes an interconnect structure disposed over a substrate, a first conductive feature disposed in the interconnect structure, a dielectric layer disposed on the interconnect structure, and a second conductive feature having a top portion and a bottom portion. The top portion is disposed over the dielectric layer, and the bottom portion is disposed through the dielectric layer. The structure further includes an adhesion layer disposed over the dielectric layer and the second conductive feature. The adhesion layer includes a first portion disposed on a top of the second conductive feature and a second portion disposed over the dielectric layer, the first portion has a thickness, and the second portion has a width substantially greater than the thickness.

Abstract: A light field near-eye display device and a light field near-eye display method are provided. The light field near-eye display device includes a processor, a display panel, and a lens module. The processor calculates new ray tracing data based on a current eye relief, preset eye relief data, and preset ray tracing data, and adjusts preset image data according to the new ray tracing data to generate adjusted image data. The display panel is coupled to the processor and emits an image beam according to the adjusted image data. The lens module includes a microlens array and is disposed between the display panel and a pupil. The image beam is incident to the pupil through the lens module and displays a light field image.

Abstract: A light field near-eye display device and a method of light field near-eye display are provided. The light field near-eye display device includes a processor, a display panel, and a lens module. The processor adjusts a preset eye box according to a vision data to obtain an adjusted eye box, and adjusts a preset image data according to the adjusted eye box to generate an adjusted image data. The display panel is coupled to the processor and emits an image beam according to the adjusted image data. The lens module includes a micro lens array and is disposed between the display panel and a pupil. The image beam is incident on the pupil via the lens module and displays a light field image.

Abstract: A method for operating a near-eye display device is provided, which includes: disposing the near-eye display device in front of an eye of a user; forming a display image through the near-eye display device; changing the display image to perform a short-distance vision examination on the eye; changing the display image to perform a long-distance vision examination on the eye; obtaining vision examination data of the user according to results of the short-distance vision examination and the long-distance vision examination, and storing the vision examination data; and according to the vision examination data, adjusting a system parameter of the near-eye display device.

Abstract: Semiconductor devices, integrated circuits and methods of forming the same are provided. In one embodiment, a method includes depositing a first dielectric layer over a metal pad disposed over a workpiece, forming a first opening in the first dielectric layer to expose a portion of the metal pad, after the forming of the first opening, forming a second dielectric layer over the exposed portion of the metal pad, depositing a first polymeric material over the second dielectric layer, forming a second opening through the first polymeric material and the second dielectric layer to expose the metal pad, and forming a bump feature over the exposed metal pad.

Abstract: A high electron mobility transistor device including a channel layer, a first barrier layer, a gate structure, and a spacer is provided. The first barrier layer is disposed on the channel layer. The gate structure is disposed on the first barrier layer. The gate structure includes a first P-type gallium nitride layer, a second barrier layer, and a second P-type gallium nitride layer. The first P-type gallium nitride layer is disposed on the first barrier layer. The second barrier layer is disposed on the first P-type gallium nitride layer. The second P-type gallium nitride layer is disposed on the second barrier layer. A width of the second P-type gallium nitride layer is smaller than a width of the first P-type gallium nitride layer. The spacer is disposed on a sidewall of the second P-type gallium nitride layer.

Abstract: A control method of a light field display is provided. A control unit inputs a focal length signal to a zoom lens, so that the zoom lens is periodically switched among corresponding specific focal lengths. The control unit inputs a corresponding display signal to a display unit of a display module according to one of the specific focal lengths, and the display module generates one of image lights, the image lights respectively have different imaging distances corresponding to the specific focal lengths after passing through the zoom lens. The control unit inputs a corresponding response time signal to the display module according to one of the specific focal lengths, the one of image lights emitted by the display module passes through the zoom lens within one of response times, and the light field display projects the one of image lights to form an image at the corresponding imaging distance.

Abstract: Semiconductor devices, integrated circuits and methods of forming the same are provided. In one embodiment, a method includes depositing a first dielectric layer over a metal pad disposed over a workpiece, forming a first opening in the first dielectric layer to expose a portion of the metal pad, after the forming of the first opening, forming a second dielectric layer over the exposed portion of the metal pad, depositing a first polymeric material over the second dielectric layer, forming a second opening through the first polymeric material and the second dielectric layer to expose the metal pad, and forming a bump feature over the exposed metal pad.

Abstract: A method for generating virtual reality images and used in a light field near-eye display includes steps of: shifting a display image according to at least one change vector of a plurality of eye movement parameters, and calculating a compensation mask according to a simulated image and superimposing the compensation mask on a target image to generate a superimposed target image, wherein brightness distributions of the simulated image and the compensation mask are opposite to each other. The light field near-eye display is also provided. In this way, the light field near-eye display for generating virtual reality images and the method thereof can achieve the purpose of improving the uniformity of the image and expanding the eye box size.

Abstract: A method for generating virtual reality images and used in a light field near-eye display includes steps of: calculating a compensation mask according to a simulated image and superimposing the compensation mask on a target image to generate a superimposed target image, wherein brightness distributions of the simulated image and the compensation mask are opposite to each other; and shifting a display image according to a change vector of a plurality of eye movement parameters, wherein the display image is converted from the superimposed target image. The light field near-eye display is also provided. In this way, the light field near-eye display for generating virtual reality images and the method thereof can achieve the purpose of improving the uniformity of the image and expanding the eye box size.

Abstract: A light field near-eye display device and a light field near-eye display method are provided. The light field near-eye display device includes a processor, a display panel, and a lens module. The processor calculates new ray tracing data based on a current eye relief, preset eye relief data, and preset ray tracing data, and adjusts preset image data according to the new ray tracing data to generate adjusted image data. The display panel is coupled to the processor and emits an image beam according to the adjusted image data. The lens module includes a microlens array and is disposed between the display panel and a pupil. The image beam is incident to the pupil through the lens module and displays a light field image.