Abstract: A light field near-eye display device and a method of light field near-eye display are provided. The light field near-eye display device includes a processor, a display panel, and a lens module. The processor adjusts a preset eye box according to a vision data to obtain an adjusted eye box, and adjusts a preset image data according to the adjusted eye box to generate an adjusted image data. The display panel is coupled to the processor and emits an image beam according to the adjusted image data. The lens module includes a micro lens array and is disposed between the display panel and a pupil. The image beam is incident on the pupil via the lens module and displays a light field image.

Abstract: An illumination system includes an excitation light source, a first variable focus lens, a second variable focus lens, and a control unit. The excitation light source is adapted to provide an excitation light beam. The first variable focus lens is disposed on a transmission path of the excitation light beam. The first variable focus lens is located between the excitation light source and the second variable focus lens. The second variable focus lens is adapted to receive the excitation light beam exited from the first variable focus lens. The control unit is electrically connected to the first variable focus lens and the second variable focus lens, and is adapted to synchronously adjust focal lengths of the first variable focus lens and the second variable focus lens. A projection device including the above-mentioned illumination system of the invention is further provided.

Abstract: A method for forming a semiconductor device structure includes providing a substrate and forming a gate electrode on the substrate. A first contact structure is formed in and on the gate electrode. The first contact structure comprises a first portion and a second portion. The first portion is formed in the gate electrode, and the second portion is formed on the first portion.

Abstract: Semiconductor devices and methods of forming the same are provided. A method according to an embodiment includes receiving a substrate including a lower contact feature, depositing a first dielectric layer over a substrate, forming a metal-insulator-metal (MIM) structure over the first dielectric layer, depositing a second dielectric layer over the MIM structure, performing a first etch process to form an opening that extends through the second dielectric layer to expose the MIM structure, performing a second etch process to extend the opening through the MIM structure to expose the first dielectric layer; and performing a third etch process to further extend the opening through the first dielectric layer to expose the lower contact feature. Etchants of the first etch process and the third etch process include fluorine while the etchant of the second etch process is free of fluorine.

Abstract: Semiconductor devices and methods of forming the same are provided. A method according to an embodiment includes receiving a substrate including a lower contact feature, depositing a first dielectric layer over a substrate, forming a metal-insulator-metal (MIM) structure over the first dielectric layer, depositing a second dielectric layer over the MIM structure, performing a first etch process to form an opening that extends through the second dielectric layer to expose the MIM structure, performing a second etch process to extend the opening through the MIM structure to expose the first dielectric layer; and performing a third etch process to further extend the opening through the first dielectric layer to expose the lower contact feature. Etchants of the first etch process and the third etch process include fluorine while the etchant of the second etch process is free of fluorine.

Abstract: A light field near-eye display device and a method of light field near-eye display are provided. The light field near-eye display device includes a display, a processor, a lens array, and at least one lens. The display is configured to emit an image beam. The processor is electrically connected to the display, and configured to control a display content of the display. The lens array is disposed on a transmission path of the image beam. The lens is disposed between the display and an eye. The image beam is projected to the eye through the lens array and the lens, so as to form a light field virtual image. The processor is configured to receive aberration data of the eye which is input by the user and cause the light field virtual image to be formed in focus range corresponding to the aberration data of the eye.

Abstract: Semiconductor devices, integrated circuits and methods of forming the same are provided. In one embodiment, a method includes depositing a first dielectric layer over a metal pad disposed over a workpiece, forming a first opening in the first dielectric layer to expose a portion of the metal pad, after the forming of the first opening, forming a second dielectric layer over the exposed portion of the metal pad, depositing a first polymeric material over the second dielectric layer, forming a second opening through the first polymeric material and the second dielectric layer to expose the metal pad, and forming a bump feature over the exposed metal pad.

Abstract: A method for forming a semiconductor device structure includes providing a substrate and forming a gate electrode on the substrate. A first contact structure is formed in and on the gate electrode. The first contact structure comprises a first portion and a second portion. The first portion is formed in the gate electrode, and the second portion is formed on the first portion.

Abstract: A method for forming a semiconductor device structure includes providing a substrate and forming a gate electrode on the substrate. A first contact structure is formed in and on the gate electrode. The first contact structure comprises a first portion and a second portion. The first portion is formed in the gate electrode, and the second portion is formed on the first portion.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a gate stack positioned over the semiconductor substrate. The semiconductor device structure includes spacers positioned over sidewalls of the gate stack. The semiconductor device structure includes a first protective layer positioned between the gate stack and the spacers and between the spacers and the semiconductor substrate. The semiconductor device structure includes a second protective layer positioned between the spacers and the first protective layer. The first protective layer and the second protective layer include different materials.

Abstract: A method for forming a semiconductor device structure includes providing a substrate and forming a gate electrode on the substrate. A first contact structure is formed in and on the gate electrode. The first contact structure comprises a first portion and a second portion. The first portion is formed in the gate electrode, and the second portion is formed on the first portion.

Abstract: A method of forming an integrated circuit that includes providing a substrate, a metal layer over the substrate, and a first dielectric layer over the metal layer. The first dielectric layer includes a via. A sidewall layer that includes a silicon compound is in the via. A second dielectric layer is over the sidewall layer and an ultra-thick metal (UTM) layer is in the via.

Abstract: A method for forming a semiconductor device structure includes providing a substrate and forming a gate electrode on the substrate. A first contact structure is formed in and on the gate electrode. The first contact structure comprises a first portion and a second portion. The first portion is formed in the gate electrode, and the second portion is formed on the first portion.

Abstract: An integrated circuit including a first transistor having a first gate dielectric layer with a first thickness. The integrated circuit also includes a second transistor having a second gate dielectric layer with a second thickness and the second transistor is configured to electrically connect to the first transistor. The integrated circuit also includes a third transistor having a third gate dielectric layer with a third thickness and the third transistor is configured to electrically connect to at least one of the first transistor or the second transistor. The first thickness, the second thickness and the third thickness of the integrated circuit are all different.

Abstract: Optical touch display system includes a light source, a reflector, an image sensor, and a processing device. The light source emits light to at least one object directly and emits light to the at least one object via the reflector at the same time. Then the image sensor receives light reflected from the at least one object directly and light reflected via the reflector simultaneously to form a set of imaging objects which have similar color parameters on an image. Then the processing device produces a set of still image parameters of the image objects such as gravity centers and border boundaries. Based on the still image parameters, the processing device determines the coordinates of the least one object on the optical touch display.

Abstract: A method of forming an integrated circuit that includes providing a substrate, a metal layer over the substrate, and a first dielectric layer over the metal layer. The first dielectric layer includes a via. A sidewall layer that includes a silicon compound is in the via. A second dielectric layer is over the sidewall layer and an ultra-thick metal (UTM) layer is in the via.

Abstract: A method for forming a semiconductor device structure includes providing a substrate and forming a gate electrode on the substrate. A first contact structure is formed in and on the gate electrode. The first contact structure comprises a first portion and a second portion. The first portion is formed in the gate electrode, and the second portion is formed on the first portion.

Abstract: A nocturnal vehicle counting method based on a mixed particle filter is introduced in that, in a nocturnal environment, a rear lamp of a vehicle is the most remarkable feature of the vehicle and forms a high-brightness region of an image of the vehicle. The method involves detecting the high-brightness region of an image of the vehicle to thereby detect the rear lamp of the vehicle. The method further involves operating a particle filter structure which, coupled with the detection of a moving high-brightness region, can detect and track the rear lamp of the vehicle simultaneously, thereby enhancing competitiveness and incurring low costs.

Abstract: An integrated circuit that includes a substrate, a metal layer over the substrate and a first dielectric layer over the metal layer. The first dielectric layer includes a via. A sidewall layer that includes a silicon compound is in the via. A second dielectric layer is over the sidewall layer and an ultra-thick metal (UTM) layer is in the via.

Abstract: A controlling method for a sensing system includes the following step. Whether a specific function is started is determined according to the amount of pixels of a total pattern acquired by sensing a first object. In an embodiment of the present invention, the step of determining whether the specific function is started according to the amount of pixels of the total pattern is the step of determining whether the specific function is started according to the amount of pixels of the total pattern and the length of time to successively acquire the total pattern. Accordingly, it is more convenient for a user to use the sensing system having the said controlling method.