Abstract: A method for managing a buffer memory in a memory storage device is provided, wherein the memory storage device has a rewritable non-volatile memory module. The method includes transmitting temporary data from the buffer memory to a buffer area of the rewritable non-volatile memory module by using a pre-programmed command set, wherein the temporary data is not programmed into a storage area of the rewritable non-volatile memory module. The method also includes releasing a storage space storing the temporary data in the buffer memory and reloading the temporary data from the buffer area into the storage space of the buffer memory. Thereby, the method can temporarily increase available storage space of the buffer memory to meet the demand of additional operations.

Abstract: A flash memory management method for managing a plurality of physical units of a flash memory chip is provided. The flash memory management method includes grouping a portion of the physical units into a data area and a spare area; configuring a plurality of logical units and setting mapping relationships between the logical units and the physical units of the data area. The flash memory management method further includes receiving data and writing the data into the physical unit mapped to a second logical unit among the logical units, and the data belongs to a first logical unit among logical units. Accordingly, the flash memory management method can effectively reduce the number of times for organizing valid data, thereby reducing the time for executing a host write-in command.

Abstract: A data accessing method, and a storage system and a controller using the same are provided. The data accessing method is suitable for a flash memory storage system having a data perturbation module. The data accessing method includes receiving a read command from a host and obtaining a logical block to be read and a page to be read from the read command. The data accessing method also includes determining whether a physical block in a data area corresponding to the logical block to be read is a new block and transmitting a predetermined data to the host when the physical block corresponding to the logical block to be read is a new block. Thereby, the host is prevented from reading garbled code from the flash memory storage system having the data perturbation module.

Abstract: A data writing method, a memory storage device, and a memory controlling circuit unit are provided. The writing method includes: grouping logical erasing units into a first region and an second region; determining if a first logical erasing unit which a host system intends to write belongs to the first region or the second region; if the first logical erasing unit belongs to the first region, writing data to a spare physical programming unit, wherein the physical erasing unit to which the spare physical programming belongs further stores data belonging to another logical erasing unit; if the first logical erasing unit belongs to the second region, writing data to a physical erasing unit in which all the valid data belong to the first logical erasing unit. Accordingly, a speed of sequential writing is guaranteed to be greater than a target value.

Abstract: A memory controlling method, a memory storage device and a memory controlling circuit unit are provided. The method includes: providing a first clock signal to a rewritable non-volatile memory module and reading a first data in the rewritable non-volatile memory module according to the first clock signal; providing a second clock signal to the rewritable non-volatile memory module and writing a second data into the rewritable non-volatile memory module according to the second clock signal. A frequency of the second clock signal is different from a frequency of the first clock signal. Accordingly, an operation speed of the rewritable non-volatile memory module may be increased and probabilities of having errors for some operations are decreased.

Abstract: A method for writing updated data into a flash memory module having a plurality of physical pages is provided, wherein each physical page is the smallest writing unit of the flash memory module. The method includes partitioning a physical page into storage segments and configuring a state mark for each storage segment, wherein the state marks indicate the validity of data stored in the storage segments. The method also includes writing the updated data into at least one of the storage segments and changing the state mark corresponding to the storage segment containing the updated data, wherein the state mark corresponding to the storage segment containing the updated data indicates a valid state, and the state marks corresponding to the other storage segments of the physical page not containing the updated data indicate an invalid state. Thereby, the time for writing data into a physical page is effectively shortened.

Abstract: A data management method, a memory controller and a memory storage apparatus are provided. The method includes grouping a plurality of physical units of a rewritable non-volatile memory module into at least a data area and a free area. The method also includes configuring a plurality of logical units for mapping a part of the physical units. The method further includes receiving at least two pieces of update data, which are corresponding to different logical pages of the logical units. The method further includes getting a physical unit from the physical units. The method further includes writing the at least two pieces of update data into the same one physical page of the gotten physical unit. Accordingly, the use efficiency of the physical units could be improved.

Abstract: A memory management table processing method for storing a plurality of entries belonging to a plurality of memory management tables into a buffer memory of a memory storage apparatus is provided, wherein each of the entries has at least one invalid bit. The present method includes following steps. An area corresponding to each of the memory management tables is configured in the buffer memory. Invalid bit information corresponding to each of the memory management tables is recorded. The invalid bit in each of the entries is removed according to the invalid bit information corresponding to each of the memory management tables, so as to generate a valid data stream corresponding to each of the entries. Each of the valid data streams is written into the corresponding area in the buffer memory. Accordingly, the storage space of the buffer memory can be efficiently utilized.

Abstract: A data writing method and a memory controller and a memory storage apparatus using the same are provided. The method includes selecting physical units as a global random area and building a global random searching table for recording update information corresponding to updated logical pages that data stored in the global random area belongs to. The method also includes receiving updated data belonging to a logical page of a logical unit, assigning an index number for the logical unit, writing the updated data into the global random area, and using the index number to record update information corresponding the logical page in the global random searching table. Accordingly, a global random searching table having smaller size can be used for recording update information corresponding to updated logical pages that data stored in the global random area belongs to.

Abstract: A data accessing method, and a storage system and a controller using the same are provided. The data accessing method is suitable for a flash memory storage system having a data perturbation module. The data accessing method includes receiving a read command from a host and obtaining a logical block to be read and a page to be read from the read command. The data accessing method also includes determining whether a physical block in a data area corresponding to the logical block to be read is a new block and transmitting a predetermined data to the host when the physical block corresponding to the logical block to be read is a new block. Thereby, the host is prevented from reading garbled code from the flash memory storage system having the data perturbation module.

Abstract: A data writing method for a memory storage apparatus having a first buffer memory, a second buffer memory and a rewritable non-volatile memory module is provided, and the transmission bandwidth of the first buffer memory is larger than the transmission bandwidth of the second buffer memory. The method includes: receiving a write command and first data thereof; determining whether the first data belongs to the successive big data; if the first data belongs to the successive big data, temporarily storing the first data into a first data buffer area of the first buffer memory, writing the first write data from the first data buffer area to the rewritable non-volatile memory module; and if the first data does not belongs to the successive big data, temporarily storing the first data into a second data buffer area of the second buffer memory.

Abstract: A data management method, a memory controller and a memory storage apparatus are provided. The method includes grouping a plurality of physical units of a rewritable non-volatile memory module into at least a data area and a free area. The method also includes configuring a plurality of logical units for mapping a part of the physical units. The method further includes receiving at least two pieces of update data, which are corresponding to different logical pages of the logical units. The method further includes getting a physical unit from the physical units. The method further includes writing the at least two pieces of update data into the same one physical page of the gotten physical unit. Accordingly, the use efficiency of the physical units could be improved.

Abstract: A data storing method for a rewritable non-volatile memory module is provided. The method includes receiving page data to be stored in a first logical address. The method also includes determining whether a storage status of the rewritable non-volatile memory module is a predetermined status; if yes, using a first writing mode to write the page data into the rewritable non-volatile memory module; if no, using a second writing mode to write the page data into the rewritable non-volatile memory module. In the first writing mode, lower physical program units of the rewritable non-volatile memory module are applied for writing data, and upper physical program units of the rewritable non-volatile memory module are not applied for writing data; in the second writing mode, the upper physical program units and the lower physical program units are applied for writing data.

Abstract: A method of moving a first portion of data and a second portion of data, which belong to one page data and respectively stored in a second physical page and a third physical page, into a first physical page in a flash memory module is provided. The method includes transmitting a read command for reading page data stored in the second physical page; reading the first portion of data from a buffer area of the rewritable non-volatile memory module into a buffer memory; transmitting a read command for reading page data stored in the third physical page; transmitting the first portion of data from the buffer memory to the buffer area; and transmitting a write command for writing data stored in the buffer area into the first physical page. Accordingly, the method can effectively move one page data dispersedly stored in different physical pages into one physical page.

Abstract: A data protecting method, a memory storage device, and a memory controller are provided for a rewritable non-volatile memory module. The data protecting method includes: generating a first error correcting code by using data stored in first memory cells of a plurality of memory cells. The first memory cells are located on first word lines and first bit lines. Among the memory cells located on each of the first bit lines, only one of the memory cells stores the data used to generate the first error correcting code. Accordingly, the data in the memory cells is efficiently protected.

Abstract: A data writing method for a rewritable non-volatile memory module is provided. The method includes selecting at least one physical erasing unit as a global random area and building a global random area searching table for recording update information corresponding to updated logical pages that data stored in the global random area belongs to. The method also includes receiving updated data belonging to a logical page; and determining whether a data dispersedness degree corresponding to the global random area is smaller than a data dispersedness degree threshold. The method further includes, if the data dispersedness degree corresponding to the global random area is smaller than the data dispersedness degree threshold, writing the update data into the global random area and recording update information corresponding to the logical page in the global random area searching table.

Abstract: A memory storage device, a memory controller, and a data writing method are provided. The memory storage device has a rewritable non-volatile memory chip including a plurality of physical units, and each of the physical units has a plurality of physical pages. The data writing method includes configuring a plurality of logical units to be mapped to a portion of the physical units, and each of the logical unit has a plurality of logical pages. The data writing method also includes receiving a first write data from a host system and writing the first write data into the ith physical page in a substitute physical unit selected from the physical units. The data writing method further includes writing a first address access information corresponding to the first write data and a second address access information into the ith physical page. Herein i is a positive integer.

Abstract: A data storage method for storing data into a flash memory chip is provided. The flash memory chip has a plurality of physical addresses, and these physical addresses include a plurality of fast physical addresses and a plurality of slow physical addresses. In the data storage method, the usage rate of the physical addresses is monitored. When the usage rate is not larger than a usage rate threshold value, only the fast physical addresses are used for storing the data into the flash memory chip. When the usage rate is larger than the usage rate threshold value, the fast physical addresses and the slow physical addresses are used for storing the data into the flash memory chip. Thereby, the speed of storing data into the flash memory chip is effectively increased.

Abstract: A data storing method for a rewritable non-volatile memory module is provided. The method includes dividing logical addresses into a plurality of logical zones, and respectively establishing a plurality of logical address mapping tables for the logical zones. The method also includes writing data of a logical address into a physical program unit; and recording a mapping record indicating the logical address is mapped to the physical program unit in a temp mapping table. The method further includes: if the temp mapping table is full, updating the mapping relations between the logical addresses and the physical program units in the logical address mapping tables based on mapping records recorded in the temp mapping table, and deleting the mapping records in the temp mapping table.

Abstract: A command executing method for a memory storage apparatus and a memory controller and the memory storage apparatus using the same are provided. The method includes, during a data merging operation, receiving a write command and a write data corresponding to the write command from a host system. The method also includes temporarily storing the write data into a buffer memory, and at a delay time point, transmitting a response message to the host, the delay time point is set by adding a dummy delay time to a time point that the operation of writing the write data into the buffer memory is completed. Accordingly, the method can effectively level the response times of executing write commands during the data merging operation, thereby shortening the maximum access time.