Abstract: A data writing method for writing data into a memory cell of a rewritable non-volatile memory module, and a memory control circuit unit and a memory storage apparatus using the same area provided. The method includes recording a wear degree of the memory cell and detecting an operating temperature of the memory storage apparatus. The method further includes adjusting at least one predetermined operation parameter corresponding to the rewritable non-volatile memory module to generate at least one adjusted operation parameter corresponding to the rewritable non-volatile memory module and writing the data into the memory cell based on the at least one adjusted operation parameter if the operating temperature of the memory storage apparatus is larger than a predetermined temperature. Accordingly, the method can accurately store data into the rewritable non-volatile memory module, thereby lowing the operating temperature of the memory storage apparatus.

Abstract: A block management method for managing a plurality of physical blocks of a flash memory chip is provided. The block management method includes configuring a plurality of logical addresses; mapping the logical addresses to a plurality of logical blocks; and mapping the logical blocks to the physical blocks. Additionally, the block management method also includes obtaining deleting records related to a plurality of deleted logical addresses from a host system, wherein data stored in the deleted logical addresses is recognized as invalid by the host system. And, the block management method further includes obtaining a deleted logical block, marking each of the logical addresses mapped to the deleted logical block as a bad logical address, and linking the physical block mapped to the deleted logical block to a spare area. Accordingly, the block management method can effectively prolong the lifespan of a flash memory chip.

Abstract: A data read method for reading data to be accessed by a host system from a plurality of flash memory modules is provided. The data read method includes receiving command queuing information related to a plurality of host read commands from the host system, each of the host read commands is corresponding to one of a plurality of data input/output buses coupled to the flash memory modules. The data read method also includes re-arranging the host read commands and generating a command giving sequence according to the data input/output buses corresponding to the host read commands. The data read method further includes sequentially receiving and processing the host read commands from the host system according to the command giving sequence and pre-reading data corresponding to a second host read command. Thereby, the time for executing the host read commands can be effectively shortened.

Abstract: A data writing method for writing updated data from a host into a memory module is provided. Herein, some physical units of the memory module are gotten to be global random physical units for storing data from the host. The method includes determining whether the updated data is sequential data and determining whether a logical page corresponding to the updated data is a start logical page. The method further includes getting a blank physical unit from the physical units as a new global random physical unit and writing the updated data into the new global random physical unit when the updated data is the sequential data and the logical page corresponding to the updated data is the start logical page. Accordingly, the method can write updated data belonging to the same logical unit into the same physical unit, thereby shortening the time for executing write commands.

Abstract: A data writing method for a rewritable non-volatile memory module is provided. The rewritable non-volatile memory module has a plurality of lower physical pages and a plurality of upper physical pages respectively corresponding to the lower physical pages. The method includes determining whether a physical page is one of the upper physical pages before writing first data into the physical page; determining whether a backup area stores second data written into one of the lower physical pages corresponding to the physical page if the physical page is the upper physical page; reading the second data from the lower physical page corresponding to the physical page and backing up the second data into the backup area before writing the first data into the physical page when the backup area does not store the second data. Accordingly, the method may effectively prevent data loss due to a program failure.

Abstract: A method for writing updated data into a flash memory module having a plurality of physical pages is provided, wherein each physical page is the smallest writing unit of the flash memory module. The method includes partitioning a physical page into storage segments and configuring a state mark for each storage segment, wherein the state marks indicate the validity of data stored in the storage segments. The method also includes writing the updated data into at least one of the storage segments and changing the state mark corresponding to the storage segment containing the updated data, wherein the state mark corresponding to the storage segment containing the updated data indicates a valid state, and the state marks corresponding to the other storage segments of the physical page not containing the updated data indicate an invalid state. Thereby, the time for writing data into a physical page is effectively shortened.

Abstract: A data accessing method, and a storage system and a controller using the same are provided. The data accessing method is suitable for a flash memory storage system having a data perturbation module. The data accessing method includes receiving a read command from a host and obtaining a logical block to be read and a page to be read from the read command. The data accessing method also includes determining whether a physical block in a data area corresponding to the logical block to be read is a new block and transmitting a predetermined data to the host when the physical block corresponding to the logical block to be read is a new block. Thereby, the host is prevented from reading garbled code from the flash memory storage system having the data perturbation module.

Abstract: A data storing method for a memory storage apparatus having a flash memory module is provided. The method includes detecting the operating temperature of the memory storage device through a thermal sensor and determining whether the operating temperature of the memory storage device is larger than a predetermined temperature. The methods further includes using a first data storing mode to access the flash memory module if the operating temperature of the memory storage device is not larger than the predetermined temperature; and using a second data storing mode to access the flash memory module if the operating temperature of the memory storage apparatus is larger than the predetermined temperature, wherein the first data storing mode is different from the second data storing mode. Accordingly, the method can effectively ensure the accuracy of the data stored into the flash memory module.

Abstract: A data accessing method, and a storage system and a controller using the same are provided. The data accessing method is suitable for a flash memory storage system having a data perturbation module. The data accessing method includes receiving a read command from a host and obtaining a logical block to be read and a page to be read from the read command. The data accessing method also includes determining whether a physical block in a data area corresponding to the logical block to be read is a new block and transmitting a predetermined data to the host when the physical block corresponding to the logical block to be read is a new block. Thereby, the host is prevented from reading garbled code from the flash memory storage system having the data perturbation module.

Abstract: A memory management method for managing physical units of a rewritable non-volatile memory module is provided. In the method, the physical units are grouped into at least a data area and a free area. The method includes obtaining empty physical units from the free area to configure a first global random area and obtaining empty physical units from the data area to configure a second global random area. The method further includes using the physical units of the first global random area to write updated data, and using the physical units of the second global random area to write other updated data after the physical units of the first global random area are written full of the updated data. Accordingly, the method can increase the storage space of a global random area, and thereby reduces data merging operations and shortens the time for executing a write command.

Abstract: A method for writing updated data into a flash memory module having a plurality of physical pages is provided, wherein each physical page is the smallest writing unit of the flash memory module. The method includes partitioning a physical page into storage segments and configuring a state mark for each storage segment, wherein the state marks indicate the validity of data stored in the storage segments. The method also includes writing the updated data into at least one of the storage segments and changing the state mark corresponding to the storage segment containing the updated data, wherein the state mark corresponding to the storage segment containing the updated data indicates a valid state, and the state marks corresponding to the other storage segments of the physical page not containing the updated data indicate an invalid state. Thereby, the time for writing data into a physical page is effectively shortened.

Abstract: A method for writing data is provided, including: configuring multiple logical programming units for mapping to a portion of the physical programming units in the rewritable non-volatile memory module, and dividing each logical programming unit into multiple logical management units, wherein a size of each logical management unit is identical to a basic access unit of a host system. The method includes: receiving a first data from the host system, determining whether a logical start address of the first data is not aligned to a start address of each logical management unit within the first logical programming unit and/or determining whether a logical end address of the first data is not aligned to an end address of each logical management unit within the first logical programming unit. If the determination result is positive, filling the first data by using a second data which is larger than the basic access unit.

Abstract: A data storing method for a rewritable non-volatile memory module is provided. The method includes dividing logical addresses into a plurality of logical zones, and respectively establishing a plurality of logical address mapping tables for the logical zones. The method also includes writing data of a logical address into a physical program unit; and recording a mapping record indicating the logical address is mapped to the physical program unit in a temp mapping table. The method further includes: if the temp mapping table is full, updating the mapping relations between the logical addresses and the physical program units in the logical address mapping tables based on mapping records recorded in the temp mapping table, and deleting the mapping records in the temp mapping table.

Abstract: A data writing method for controlling a rewritable non-volatile memory module having a plurality of physical erase units is provided. The method includes: receiving a write command which instructs writing data to a first logical address, wherein the first logical address is mapped to a second physical erase unit; determining whether the second physical erase unit is in a sequential writing state which represents that the physical programming units over a predetermined ratio in the second physical erasing unit have been successively written sequentially within a predetermined time; if yes, writing the data into a third physical erasing unit in a first programming mode, wherein the first programming mode represents that a plurality of upper physical programming units are non-programmable. Accordingly, the data writing rate is increased.

Abstract: A memory management method adapted to a rewritable non-volatile memory module having a plurality of physical erase units is provided. The operation mode of each physical erase unit is set to include three modes. A first mode indicates all physical program units to be programmable, a second mode and a third mode indicate upper physical program units to be non-programmable, but the third mode is unswitchable to the first or the second mode. The physical erase units are grouped into a first area and a second area. Each physical erase unit in the first area switchably operates in the first or the second mode, and each physical erase unit in the second area operates in the third mode. If a condition is satisfied, a physical erase unit in the first area is grouped to the second area. Thereby, the lifespan of the rewritable non-volatile memory module is prolonged.

Abstract: A flash memory control circuit including a microprocessor unit, a first interface unit for connecting a flash memory, a second interface unit for connecting a computer host, an error correcting unit, a memory management unit, and a marking unit is provided. The memory management unit divides each page in the flash memory into a plurality of data bit areas, and a plurality of redundancy bit areas and a plurality of error correcting bit areas corresponding to the data bit areas, wherein each of the data bit areas has a plurality of sectors for respectively storing a sector data. The marking unit stores a data accuracy mark corresponding to each sector data in the corresponding redundancy bit area to record the status of the sector data. Thereby, the flash memory controller can effectively identify error data in the flash memory by using the error correcting codes and the data accuracy marks.

Abstract: A data writing method for a flash memory is provided. The data writing method includes: dividing a new data into at lease one sub-data by the size of a writing unit; selecting one of a plurality of spare blocks from the flash memory as a substitute block for substituting a data block, wherein the new data is to be written into the data block; sequentially writing the sub-data having the size of the writing unit into the substitute block in the writing unit; and storing the sub-data not having the size of the writing unit into a temporary area. The writing efficiency of the flash memory can be improved by temporarily storing the sub-data not having the size of the writing unit into the temporary area and then writing the sub-data not having the size of the writing unit with subsequent data into the substitute block.

Abstract: A flash memory control circuit including a microprocessor unit, a first interface unit, a second interface unit, a buffer memory, a memory management unit, and a data read/write unit is provided. The memory management unit manages a plurality of flash memory units, wherein each of the flash memory units has a plurality of flash memories, each of the flash memories has a plurality of memory cell arrays, and each of the memory cell arrays at least has an upper page and a lower page. The memory management unit groups the memory cell arrays of the corresponding flash memories into a plurality of data transfer unit sets (DTUSs). The data read/write unit interleavingly transfers data to the flash memory units in units of the DTUSs. Thereby, the flash memory control circuit can transfer the data stably and the usage of the buffer memory can be reduced.

Abstract: A data writing method for a rewritable non-volatile memory module is provided, the rewritable non-volatile memory module has a plurality of physical blocks, each of the physical blocks has a plurality of physical pages, a portion of the physical blocks are mapped to a plurality of logical blocks, and each of the logical blocks has a plurality of logical pages. The data writing method includes receiving data, and the data has a plurality of data bits and belongs to one of the logical pages. The data writing method also includes determining whether each of the data bits is a specific value. The data writing method further includes not writing the data into the physical pages when each of the data bits is the specific value. Thereby, the performance of a memory storage apparatus is improved.

Abstract: A storage unit management method for managing a plurality of physical units in a rewritable non-volatile memory module is provided, wherein the physical units are at least grouped into a data area and a spare area. The method includes configuring a plurality of logical units for mapping to the physical units belonging to the data area, and determining whether the rewritable non-volatile memory module contains cold data. The method further includes performing a first wear-leveling procedure on the physical units if it is determined that the rewritable non-volatile memory module does not contain any cold data, and performing a second wear-leveling procedure on the physical units if it is determined that the rewritable non-volatile memory module contains the cold data.