Abstract: A data reading method for a rewritable non-volatile memory module is provided, wherein the rewritable non-volatile memory module has a plurality of physical pages. The data reading method includes grouping the physical pages into a plurality of physical page groups and configuring a corresponding threshold voltage set for each of the physical page groups. The data reading method also includes respectively reading data from the physical pages of the physical page groups by using the corresponding threshold voltage sets. The data reading method further includes when data read from one of the physical pages of one of the physical page groups cannot be corrected by using an error checking and correcting (ECC) circuit, updating the threshold voltage set corresponding to the physical page group.

Abstract: A memory management and writing method for managing a memory module is provided. The memory module has a plurality of memory units and a plurality of data input/output buses corresponding to the memory units. The method includes configuring a plurality of logical units, dividing each of the logical units as a plurality of logical parts, and mapping the logical parts of each of the logical units to physical blocks of the memory units. The method also includes respectively establishing mapping tables corresponding to the data input/output buses, and only using one of the data input/output buses to write data from a host system into the corresponding memory unit according to the mapping table corresponding to the data input/output bus. Accordingly, the method can effectively increase the speed of writing data into the memory module.

Abstract: A data writing method for writing page data into a rewritable non-volatile memory module is provided, the rewritable non-volatile memory module has a plurality of physical blocks, and each of the physical blocks has a plurality of physical pages. The data writing method includes grouping the physical pages into a plurality of physical page groups according to write speed of each physical page. The data writing method also includes compressing the page data to generate compressed data and calculating a data compression ratio corresponding to the compressed data. The data writing method further includes writing the compressed data into one of the physical pages in a corresponding physical page group among the physical page groups according to the data compression ratio. Accordingly, the data writing method can effectively ensure the accuracy of data stored in the rewritable non-volatile memory module.

Abstract: A data accessing method, and a storage system and a controller using the same are provided. The data accessing method is suitable for a flash memory storage system having a data perturbation module. The data accessing method includes receiving a read command from a host and obtaining a logical block to be read and a page to be read from the read command. The data accessing method also includes determining whether a physical block in a data area corresponding to the logical block to be read is a new block and transmitting a predetermined data to the host when the physical block corresponding to the logical block to be read is a new block. Thereby, the host is prevented from reading garbled code from the flash memory storage system having the data perturbation module.

Abstract: A storage apparatus is provided. The controller of the storage apparatus includes an error correction module and a data disordering module. The error correction module is configured to perform an error correction procedure for a data packet to be written into a flash memory module of the storage apparatus for generating sequence data codes containing the data packet and corresponding error correcting codes, wherein the data packet includes a data area recording data to be written and a spare area recording data related to the data packet. The data disordering module is configured to convert the sequence data codes into non-sequence data codes, wherein the data of the data area and the spare area and error correcting codes are dispersed in the non-sequence data codes. Accordingly, it is possible to effectively increase the safety of the data packet.

Abstract: A data writing method for writing data belonging to a logical page into a rewritable non-volatile memory module is provided. In the data writing method, a mark count value is set for each logical page. Whether the mark count value corresponding to the logical page is greater than a predetermined threshold is determined. If the mark count value corresponding to the logical page is not greater than the predetermined threshold, the mark count value corresponding to the logical page is counted, and the data and the mark count value corresponding to the logical page are written into a first storage area or a second storage area. Otherwise, the data and the mark count value corresponding to the logical page are written into the second storage area. Thereby, data stored in the rewritable non-volatile memory module can be effectively identified and data loss caused by power failure can be avoided.

Abstract: A storage apparatus is provided. The controller of the storage apparatus includes an error correction module and a data disordering module. The error correction module is configured to perform an error correction procedure for a data packet to be written into a flash memory module of the storage apparatus for generating sequence data codes containing the data packet and corresponding error correcting codes, wherein the data packet includes a data area recording data to be written and a spare area recording data related to the data packet. The data disordering module is configured to convert the sequence data codes into non-sequence data codes, wherein the data of the data area and the spare area and error correcting codes are dispersed in the non-sequence data codes. Accordingly, it is possible to effectively increase the safety of the data packet.

Abstract: A method for managing a buffer memory in a memory storage device is provided, wherein the memory storage device has a rewritable non-volatile memory module. The method includes transmitting temporary data from the buffer memory to a buffer area of the rewritable non-volatile memory module by using a pre-programmed command set, wherein the temporary data is not programmed into a storage area of the rewritable non-volatile memory module. The method also includes releasing a storage space storing the temporary data in the buffer memory and reloading the temporary data from the buffer area into the storage space of the buffer memory. Thereby, the method can temporarily increase available storage space of the buffer memory to meet the demand of additional operations.

Abstract: A data accessing method, and a storage system and a controller using the same are provided. The data accessing method is suitable for a flash memory storage system having a data perturbation module. The data accessing method includes receiving a read command from a host and obtaining a logical block to be read and a page to be read from the read command. The data accessing method also includes determining whether a physical block in a data area corresponding to the logical block to be read is a new block and transmitting a predetermined data to the host when the physical block corresponding to the logical block to be read is a new block. Thereby, the host is prevented from reading garbled code from the flash memory storage system having the data perturbation module.

Abstract: A memory storage device is provided. The memory storage device includes a connector, a rewriteable non-volatile memory module, a second temporary memory and a memory controller having a first temporary memory. The memory controller receives a write command and the write data, and temporarily stores the write data into the first temporary memory. The memory controller also copies the write data into the second temporary memory from the first temporary memory and, based on the write command, writes the write data into the rewriteable non-volatile memory module. Additionally, the memory controller determines whether a program fail occurs when executing the write command. If the program fail occurs, the memory controller reads the write data from the second temporary memory and re-execute the write command. Therefore, a write speed of the memory storage device can be effectively improved.

Abstract: A block management method for managing physical blocks of a rewritable non-volatile memory, and a memory controller and a memory storage apparatus using the same are provided. The method includes grouping the physical blocks into at least a data area, a free area, and a replacement area, and grouping the physical blocks of the data area and the free area into a plurality of physical units. The method also includes when one of the physical blocks belonging to of the physical units of the data area becomes a bad physical block, getting a physical block from the replacement area and replacing the bad physical block with the gotten physical block. The method further includes associating a physical unit that contains no valid data in the free area with the replacement area. Thereby, the physical blocks can be effectively managed and the access efficiency can be improved.

Abstract: A data access method for accessing a flash memory storage system, a storage system and a controller using the same are provided. A flash memory has a plurality of physical blocks, which are grouped into a system area, a data area, and a spare area. One or more variable tables are established to record transient information of each set of mother-child blocks of the data area and the spare area. The number of the variable table could be adjusted adaptively according to time required for writing the variable table into the system area, such that an overall data access efficiency of the flash memory storage system is enhanced.

Abstract: A block management method for managing a plurality of physical blocks is provided. The method includes grouping the physical blocks into a plurality of physical units, grouping a portion of the physical units into a data area and a spare area, configuring a plurality of logical units, and grouping the logical units into a plurality of logical unit groups and configuring another portion of the physical units as a plurality of global random physical units corresponding to the logical unit groups, wherein each of the global random physical units corresponds to one of the logical unit groups. The method further includes getting the physical units from the spare area as global random substitute physical units of the global random physical units. Accordingly, the method can store data in the global random physical units or the global random substitute physical units, thereby reducing the time for executing a host write command.

Abstract: A data writing method for a rewritable non-volatile memory module is provided. The rewritable non-volatile memory module has a plurality of lower physical pages and a plurality of upper physical pages respectively corresponding to the lower physical pages. The method includes determining whether a physical page is one of the upper physical pages before writing first data into the physical page; determining whether a backup area stores second data written into one of the lower physical pages corresponding to the physical page if the physical page is the upper physical page; reading the second data from the lower physical page corresponding to the physical page and backing up the second data into the backup area before writing the first data into the physical page when the backup area does not store the second data. Accordingly, the method may effectively prevent data loss due to a program failure.

Abstract: A method of moving a first portion of data and a second portion of data, which belong to one page data and respectively stored in a second physical page and a third physical page, into a first physical page in a flash memory module is provided. The method includes transmitting a read command for reading page data stored in the second physical page; reading the first portion of data from a buffer area of the rewritable non-volatile memory module into a buffer memory; transmitting a read command for reading page data stored in the third physical page; transmitting the first portion of data from the buffer memory to the buffer area; and transmitting a write command for writing data stored in the buffer area into the first physical page. Accordingly, the method can effectively move one page data dispersedly stored in different physical pages into one physical page.

Abstract: A data management method, a memory controller and a memory storage apparatus are provided. The method includes grouping physical units of a rewritable non-volatile memory module into at least a data area and a free area. The method also includes configuring logical units for mapping to the physical units of the data area and writing update data belonging to the logical pages of the logical units orderly into the physical pages of physical units gotten from the free area. The method further includes configuring root units for the logical pages, configuring an entry chain for each of the root units and building entries on the entry chains for recording update information of the updated logical pages, wherein each of the logical pages corresponds to a root unit. Accordingly, the table size for storing the update information is effectively reduced and the time for searching valid data is effectively shortened.

Abstract: A memory storage device, a memory controller thereof, and a method for responding host commands are provided. The memory storage device has a flash memory chip and a buffer memory. The present method includes receiving a write command issued by a host system and determining whether the write command causes the memory storage device to trigger a data moving procedure. If the write command does not cause the memory storage device to trigger the data moving procedure, the present method further includes sending an acknowledgement message corresponding to the write command to the host system after data corresponding to the write command is completely transferred to the buffer memory.

Abstract: A data writing method and a memory controller and a memory storage apparatus using the same are provided. The method includes selecting physical units as a global random area and building a global random searching table for recording update information corresponding to updated logical pages that data stored in the global random area belongs to. The method also includes receiving updated data belonging to a logical page of a logical unit, assigning an index number for the logical unit, writing the updated data into the global random area, and using the index number to record update information corresponding the logical page in the global random searching table. Accordingly, a global random searching table having smaller size can be used for recording update information corresponding to updated logical pages that data stored in the global random area belongs to.

Abstract: A data accessing method for a flash memory and a storage system and a controller using the same are provided. The data accessing method includes grouping a plurality of physical blocks of the flash memory into a data area, a spare area, and a random area and when a write command and a new data to be written are received from a host, determining whether the new data is a continuous data, wherein the new data is written temporarily into the physical blocks in the random area if the new data is not a continuous data. Thereby, the number of data moving and physical block erasing is reduced and accordingly the data accessing speed in a random writing mode is increased.

Abstract: A memory managing method for a non-volatile memory and a controller using the same are disclosed. The controller includes a system wear leveling member for performing a first wear leveling process in a non-volatile memory for choosing a memory unit; and a subsystem wear leveling member for performing a second wear leveling process in the chosen memory unit for selecting a block from the chosen memory unit for data programming; whereby uneven use of the blocks of the chosen memory unit is avoided.