Patents by Inventor Chih-Kung Chang

Chih-Kung Chang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20040147105
    Abstract: A method for fabricating a microelectronic product provides for forming a planarizing layer upon a bond pad and a topographic feature, both formed laterally separated over a substrate. The planarizing layer is formed with a diminished thickness upon the bond pad such that it may be readily etched to expose the bond pad while employing as a mask an additional layer formed over the topographic feature but not over the bond pad. The method is particularly useful for forming color filter sensor image array optoelectronic products with attenuated bond pad corrosion.
    Type: Application
    Filed: January 29, 2003
    Publication date: July 29, 2004
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Kung Chang, Yu-Kung Hsiao, Sheng-Liang Pan, Fu-Tien Wong, Chin-Chen Kuo, Chung-Sheng Hsiung, Hung-Jen Hsu, Yi-Ming Dai, Po-Wen Lin, Te-Fu Tseng
  • Patent number: 6759276
    Abstract: A new method is provided of treating the wafer prior to the process of singulating the wafer into individual die. A surface of the wafer over which CMOS image sensor devices have been created is coated with a layer of material that is non-soluble in water. The wafer is singulated by sawing through the layer of material that has been coated over the surface of the wafer and by then sawing through the wafer. The singulated die is then further processed by applying steps of die mount, wire bonding, surrounding the die in a mold compound and marking the package.
    Type: Grant
    Filed: July 30, 2002
    Date of Patent: July 6, 2004
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Hung-Jen Hsu, Yu-Kung Hsiao, Chih-Kung Chang, Sheng-Liang Pan
  • Publication number: 20040023470
    Abstract: A new method is provided of treating the wafer prior to the process of singulating the wafer into individual die. A first surface of the wafer over which CMOS image sensor devices have been created is coated with a layer of material that is non-soluble in water. The wafer is attached to a tape by bringing a second surface of the wafer in contact with the tape. The wafer is singulated by approaching the first surface of the wafer and by sawing first through the layer of material that has been coated over the first surface of the wafer and by then sawing through the wafer, stopping at the surface of the tape. A thorough water rinse is applied to the surface of the singulated wafer, followed by a wafer clean applying specific chemicals for this purpose. The singulated die is now removed from the tape and further processed by applying steps of die mount, wire bonding, surrounding the die in a mold compound and marking the package.
    Type: Application
    Filed: May 7, 2003
    Publication date: February 5, 2004
    Inventors: Hung-Jen Hsu, Yu-Kung Hsiao, Chih-Kung Chang, Sheng-Liang Pan
  • Patent number: 6671396
    Abstract: Pigment-based resists tend to give off a certain amount of organic vapor during exposure. This brings about contamination of the projection lens surface as well as other parts of the system. A method to monitor this accumulation of solvent vapor on the lens surface is disclosed, based on a test matrix (in which exposure time and focal distance are systematically varied) through which a series of images are formed in the resist and then evaluated for quality. A key feature is the test patterns that are used for forming the images. Said patterns are designed so as to maximize the total amount of diffraction that occurs during image formation, thereby maximizing sensitivity to changes in lens quality. Several examples of the test patterns are provided.
    Type: Grant
    Filed: September 18, 2000
    Date of Patent: December 30, 2003
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Chih-Kung Chang, Bii-Jung Chang, Sheng-Liang Pang, Kuo-Liang Lu
  • Patent number: 6660641
    Abstract: Within a method for forming a planarizing layer within a microelectronic fabrication, there is employed formed upon a partially photoexposed planarizing layer formed of a partially photoexposed negative photoresist material a sacrificial layer. Within the method, when sequentially: (1) stripping from the partially photoexposed planarizing layer the sacrificial layer; and (2) developing the partially photoexposed planarizing layer to form a developed planarizing layer, the developed planarizing layer is formed with enhanced planarity and diminished thickness.
    Type: Grant
    Filed: July 5, 2002
    Date of Patent: December 9, 2003
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chin Chen Kuo, Sheng Liang Pan, Yu-Kung Hsiao, Chih-Kung Chang, Fu-Tien Wong, Chung Sheng Hsiung
  • Patent number: 6590239
    Abstract: Within a method for forming a color filter image array optoelectronic microelectronic fabrication, and the color filter image array optoelectronic microelectronic fabrication formed employing the method, there is provided a substrate having formed therein a series of photo active regions. There is also formed over the substrate at least one color filter layer having formed therein a color filter region having a concave upper surface. There is also formed upon the at least one color filter layer and planarizing the at least one color filter region having the concave upper surface, a planarizing layer. The planarizing layer provides for enhanced resolution of the color filter image array optoelectronic microelectronic fabrication.
    Type: Grant
    Filed: July 30, 2001
    Date of Patent: July 8, 2003
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chung-Sheng Hsiung, Kuo-Liang Lu, Yu-Kung Hsiao, Chih-Kung Chang, Fu-Tien Wong, Sung-Yung Yang, Chin-Chen Kuo
  • Patent number: 6531266
    Abstract: A process for reworking a non-reflowed, defective microlens element shape, of an image sensor device, without damage to an underlying spacer layer, or to underlying color filter elements, has been developed. The non-reflowed, microlens element shape, if defective and needing rework, is first subjected to a high energy exposure, converting the non-reflowed, microlens element shape to a acid type, microlens shape, then removed using a base type developer solution. Prior to formation of a reworked microlens element shape a baking cycle is employed to freeze, or render inactive, any organic residue still remaining on the surface of the spacer layer, after the base type developer removal procedure. Formation of the reworked, microlens element shape, followed by an anneal cycle, results in the desired rounded, microlens element, on the underlying spacer layer.
    Type: Grant
    Filed: March 16, 2001
    Date of Patent: March 11, 2003
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Chih-Kung Chang, Kuang-Peng Lin, Yu-Kung Hsiao, Fu-Tien Weng, Bii-Junq Chang, Kuo-Liang Lu
  • Publication number: 20030020083
    Abstract: Within a method for forming a color filter image array optoelectronic microelectronic fabrication, and the color filter image array optoelectronic microelectronic fabrication formed employing the method, there is provided a substrate having formed therein a series of photo active regions. There is also formed over the substrate at least one color filter layer having formed therein a color filter region having a concave upper surface. There is also formed upon the at least one color filter layer and planarizing the at least one color filter region having the concave upper surface, a planarizing layer. The planarizing layer provides for enhanced resolution of the color filter image array optoelectronic microelectronic fabrication.
    Type: Application
    Filed: July 30, 2001
    Publication date: January 30, 2003
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chung-Sheng Hsiung, Kuo-Liang Lu, Yu-Kung Hsiao, Chih-Kung Chang, Fu-Tien Wong, Sung-Yung Yang, Chin-Chen Kuo
  • Publication number: 20020063214
    Abstract: Within both a method for fabricating an optoelectronic microelectronic fabrication and the optoelectronic microelectronic fabrication fabricated in accord with the method for fabricating the optoelectronic microelectronic fabrication there is first provided a substrate having formed therein a minimum of one photoactive region which is sensitive to infrared radiation. There is also formed over the substrate and in registration with the minimum of one optically active region a minimum of one microlens layer. Similarly, there is also formed interposed between the substrate and the minimum of one microlens layer an infrared filter layer, wherein the infrared filter is not formed contacting the substrate. The method provides that the optoelectronic microelectronic fabrication is fabricated with enhanced optical sensitivity.
    Type: Application
    Filed: November 29, 2000
    Publication date: May 30, 2002
    Applicant: Taiwan Semiconductor Manufacturing Co. Ltd.
    Inventors: Yu-Kung Hsiao, Chih-Kung Chang, Fu-Tien Weng, Chung-Sheng Hsiung, Bii-Jung Chang, Kuo-Liang Lu
  • Patent number: 6395576
    Abstract: Formation of integrated color filters for gain-ratio balanced semiconductor array imagers using a spectrophotometric feedback control loop to adjust layer thickness during the deposition process is disclosed. The fabrication sequence of G/R/B conventionally used in Prior Art has been changed to B/R/G or B/G/R to enable the process to adapt to yielding specified color gain-ratio values without the need for integrated circuit redesign. A high efficiency color filter process is demonstrated wherein the additional neutral-density attenuator layers and/or spacer layers required in Prior Art fabrication methods are eliminated. The disclosed process is shown to enable high-precision thickness control of the color filter layers. Blue coating lift-off problems and the steric effect associated with successive depositions of color layers having step-height variations are eliminated.
    Type: Grant
    Filed: June 14, 2000
    Date of Patent: May 28, 2002
    Assignee: Taiwan Semiconductor Manufacturing Company
    Inventors: Chih-Kung Chang, Yu-Kung Hsiao, Sheng-Liang Pan, Bii-Junq Chang