Abstract: A method of fabricating microlens devices. The method includes filling the bond pad areas and scribe lines, or other areas, to improve the topography of the semiconductor wafer surface. A microlens material is applied to the surface after the bond pad areas and scribe lines have been filled. Because of the improved topography, the thickness of the microlens material is more uniform, thereby facilitating the formation of uniformly shaped microlenses.

Abstract: A method for processing a semiconductor substrate includes providing a substrate having at least one filter region with a plurality of bond pads in it. Metal is deposited above the bond pads, to reduce the bond pad step height. A planarization layer is formed such that the deposited metal has a height near to a height of the planarization layer. At least one color resist layer is formed above the planarization layer.

Abstract: A method for fabricating a microelectronic product provides for forming a planarizing layer upon a bond pad and a topographic feature, both formed laterally separated over a substrate. The planarizing layer is formed with a diminished thickness upon the bond pad such that it may be readily etched to expose the bond pad while employing as a mask an additional layer formed over the topographic feature but not over the bond pad. The method is particularly useful for forming color filter sensor image array optoelectronic products with attenuated bond pad corrosion.

Abstract: A new method is provided of treating the wafer prior to the process of singulating the wafer into individual die. A surface of the wafer over which CMOS image sensor devices have been created is coated with a layer of material that is non-soluble in water. The wafer is singulated by sawing through the layer of material that has been coated over the surface of the wafer and by then sawing through the wafer. The singulated die is then further processed by applying steps of die mount, wire bonding, surrounding the die in a mold compound and marking the package.

Abstract: A new method is provided of treating the wafer prior to the process of singulating the wafer into individual die. A first surface of the wafer over which CMOS image sensor devices have been created is coated with a layer of material that is non-soluble in water. The wafer is attached to a tape by bringing a second surface of the wafer in contact with the tape. The wafer is singulated by approaching the first surface of the wafer and by sawing first through the layer of material that has been coated over the first surface of the wafer and by then sawing through the wafer, stopping at the surface of the tape. A thorough water rinse is applied to the surface of the singulated wafer, followed by a wafer clean applying specific chemicals for this purpose. The singulated die is now removed from the tape and further processed by applying steps of die mount, wire bonding, surrounding the die in a mold compound and marking the package.

Abstract: Pigment-based resists tend to give off a certain amount of organic vapor during exposure. This brings about contamination of the projection lens surface as well as other parts of the system. A method to monitor this accumulation of solvent vapor on the lens surface is disclosed, based on a test matrix (in which exposure time and focal distance are systematically varied) through which a series of images are formed in the resist and then evaluated for quality. A key feature is the test patterns that are used for forming the images. Said patterns are designed so as to maximize the total amount of diffraction that occurs during image formation, thereby maximizing sensitivity to changes in lens quality. Several examples of the test patterns are provided.

Abstract: Within a method for forming a planarizing layer within a microelectronic fabrication, there is employed formed upon a partially photoexposed planarizing layer formed of a partially photoexposed negative photoresist material a sacrificial layer. Within the method, when sequentially: (1) stripping from the partially photoexposed planarizing layer the sacrificial layer; and (2) developing the partially photoexposed planarizing layer to form a developed planarizing layer, the developed planarizing layer is formed with enhanced planarity and diminished thickness.

Abstract: Within a method for forming a color filter image array optoelectronic microelectronic fabrication, and the color filter image array optoelectronic microelectronic fabrication formed employing the method, there is provided a substrate having formed therein a series of photo active regions. There is also formed over the substrate at least one color filter layer having formed therein a color filter region having a concave upper surface. There is also formed upon the at least one color filter layer and planarizing the at least one color filter region having the concave upper surface, a planarizing layer. The planarizing layer provides for enhanced resolution of the color filter image array optoelectronic microelectronic fabrication.

Abstract: A process for reworking a non-reflowed, defective microlens element shape, of an image sensor device, without damage to an underlying spacer layer, or to underlying color filter elements, has been developed. The non-reflowed, microlens element shape, if defective and needing rework, is first subjected to a high energy exposure, converting the non-reflowed, microlens element shape to a acid type, microlens shape, then removed using a base type developer solution. Prior to formation of a reworked microlens element shape a baking cycle is employed to freeze, or render inactive, any organic residue still remaining on the surface of the spacer layer, after the base type developer removal procedure. Formation of the reworked, microlens element shape, followed by an anneal cycle, results in the desired rounded, microlens element, on the underlying spacer layer.

Abstract: Within a method for forming a color filter image array optoelectronic microelectronic fabrication, and the color filter image array optoelectronic microelectronic fabrication formed employing the method, there is provided a substrate having formed therein a series of photo active regions. There is also formed over the substrate at least one color filter layer having formed therein a color filter region having a concave upper surface. There is also formed upon the at least one color filter layer and planarizing the at least one color filter region having the concave upper surface, a planarizing layer. The planarizing layer provides for enhanced resolution of the color filter image array optoelectronic microelectronic fabrication.

Abstract: Within both a method for fabricating an optoelectronic microelectronic fabrication and the optoelectronic microelectronic fabrication fabricated in accord with the method for fabricating the optoelectronic microelectronic fabrication there is first provided a substrate having formed therein a minimum of one photoactive region which is sensitive to infrared radiation. There is also formed over the substrate and in registration with the minimum of one optically active region a minimum of one microlens layer. Similarly, there is also formed interposed between the substrate and the minimum of one microlens layer an infrared filter layer, wherein the infrared filter is not formed contacting the substrate. The method provides that the optoelectronic microelectronic fabrication is fabricated with enhanced optical sensitivity.

Abstract: Formation of integrated color filters for gain-ratio balanced semiconductor array imagers using a spectrophotometric feedback control loop to adjust layer thickness during the deposition process is disclosed. The fabrication sequence of G/R/B conventionally used in Prior Art has been changed to B/R/G or B/G/R to enable the process to adapt to yielding specified color gain-ratio values without the need for integrated circuit redesign. A high efficiency color filter process is demonstrated wherein the additional neutral-density attenuator layers and/or spacer layers required in Prior Art fabrication methods are eliminated. The disclosed process is shown to enable high-precision thickness control of the color filter layers. Blue coating lift-off problems and the steric effect associated with successive depositions of color layers having step-height variations are eliminated.