Abstract: A dual BIOS circuit includes a first BIOS chip, a second BIOS chip, a power supply, and a switch. The first BIOS chip is connected to a Southbridge chip of a motherboard via a bus. The second BIOS chip is connected to the Southbridge chip of a motherboard via another bus. The power supply is connected to signal pin of the Southbridge chip. The switch includes a handle. The first terminal of the switch is connected to the a detecting pin of the Southbridge chip. The second terminal of the switch is connected to the power supply. The third terminal of the switch is grounded. The first or second BIOS chip is selected to operate according to the voltage level at the detecting pin of the Southbridge chip.

Abstract: Methods and apparatus for testing a semiconductor structure requiring a precise core or operating voltage with an OBIRCH analysis arrangement. The separate power supply used for providing the precise core or operating voltage is eliminated, and is replaced by connecting a circuit comprised of a plurality of Schottky diodes connected in series across the constant voltage power supply used to provide the current for the OBIRCH analysis. A precise voltage is then tapped from an anode of the series connected Schottky diodes thereby significantly reducing effects of background noise on the OBIRCH analysis.

Abstract: An apparatus for repairing organic electroluminescent element defects is used to repair the electroluminescent element having a substantial short circuit portion/substantial short portions. The apparatus includes a transfer chamber, an electrical testing chamber and an insulator-forming chamber. In this case, the organic electroluminescent element is transferred in the transfer chamber. In the electrical testing chamber, a power supply source is provided to apply a current or voltage to the organic electroluminescent element, so that the short circuit portion or portions of the organic electroluminescent element is turned to an open circuit portion or open circuit portions. In the insulator-forming chamber, an insulator is formed on the open circuit portion or portions of the organic electroluminescent element. The invention also discloses an apparatus for repairing organic electroluminescent element defects, which further includes an optoelectrical detecting chamber.

Abstract: Methods and apparatus for testing a semiconductor structure requiring a precise core or operating voltage with an OBIRCH analysis arrangement. The separate power supply used for providing the precise core or operating voltage is eliminated, and is replaced by connecting a circuit comprised of a plurality of Schottky diodes connected in series across the constant voltage power supply used to provide the current for the OBIRCH analysis. A precise voltage is then tapped from an anode of the series connected Schottky diodes thereby significantly reducing effects of background noise on the OBIRCH analysis.

Abstract: A method of repairing organic light-emitting element pixels for repairing an organic light-emitting element having a substantial short circuit portion or portions. The method includes an electrical testing step and an insulator-forming step. The organic light-emitting element includes an anode substrate, an organic functional layer and a cathode. In this case, a current or voltage is applied to the anode substrate and the cathode of the organic light-emitting element respectively in the electrical testing step, so that the short circuit portion or portions of the organic light-emitting element are transformed to an open circuit portion or portions. In the insulator-forming step, an insulator is formed at the open circuit portion or portions of the organic light-emitting element. The invention also discloses a method of repairing organic light-emitting element pixels, which further includes an electrical detection step.

Abstract: A method of repairing organic light-emitting element pixels for repairing an organic light-emitting element having a substantial short circuit portion or portions. The method includes an electrical testing step and an insulator-forming step. The organic light-emitting element includes an anode substrate, an organic functional layer and a cathode. In this case, a current or voltage is applied to the anode substrate and the cathode of the organic light-emitting element respectively in the electrical testing step, so that the short circuit portion or portions of the organic light-emitting element are transformed to an open circuit portion or portions. In the insulator-forming step, an insulator is formed at the open circuit portion or portions of the organic light-emitting element. The invention also discloses a method of repairing organic light-emitting element pixels, which further includes an electrical detection step.

Abstract: An organic light-emitting display includes a transparent substrate, a transparent anode, an organic functional layer, a cathode and an insulator. In this case, the transparent anode is formed on the transparent substrate. The organic functional layer is formed on the transparent anode. The cathode is formed on the organic functional layer. The insulator is formed on the cathode and a part of the insulator permeates into the organic functional layer.

Abstract: An apparatus for repairing organic electroluminescent element defects is used to repair the electroluminescent element having a substantial short circuit portion/substantial short portions. The apparatus includes a transfer chamber, an electrical testing chamber and an insulator-forming chamber. In this case, the organic electroluminescent element is transferred in the transfer chamber. In the electrical testing chamber, a power supply source is provided to apply a current or voltage to the organic electroluminescent element, so that the short circuit portion or portions of the organic electroluminescent element is turned to an open circuit portion or open circuit portions. In the insulator-forming chamber, an insulator is formed on the open circuit portion or portions of the organic electroluminescent element. The invention also discloses an apparatus for repairing organic electroluminescent element defects, which further includes an optoelectrical detecting chamber.

Abstract: A method and an apparatus for transporting substrates in all organic light emitting diode (OLED) process is disclosed, which has a transferring chamber provided for transporting substrates between processing modules and the atmosphere condition therein is able to be adjusted to be the same as the processing module by an atmosphere conditioner unit. According to the present invention, the substrates are not contaminated by moisture and the process operation and the factory layout are more flexible. Moreover, the OLED yield is improved.

Abstract: A method and an apparatus for transporting substrates in all organic light emitting diode (OLED) process is disclosed, which has a transferring chamber provided for transporting substrates between processing modules and the atmosphere condition therein is able to be adjusted to be the same as the processing module by an atmosphere conditioner unit. According to the present invention, the substrates are not contaminated by moisture and the process operation and the factory layout are more flexible. Moreover, the OLED yield is improved.

Abstract: A method and an apparatus for transporting substrates in an organic light emitting diode (OLED) process is disclosed, which has a transferring chamber provided for transporting substrates between processing modules and the atmosphere condition therein is able to be adjusted to be the same as the processing module by an atmosphere conditioner unit. According to the present invention, the substrates are not contaminated by moisture and the process operation and the factory layout are more flexible. Moreover, the OLED yield is improved.

Abstract: A method of producing high coercivity FePt—Si3N4 granular composite thin films for magnetic recording media is invented. The method includes magnetron co-sputtering of FePt and Si3N4 targets at controlled sputtering power and sputtering argon gas pressure to form a selective composition of granular FePt—Si3N4 thin film on a low temperature substrate, then post-annealed in vacuum at selective time period and temperature. Two kinds of FePt targets can be used. One is the FePt alloy target. The other one is a composite target consisting of an iron disk overlaid with small Pt pieces. This arrangement provides a wide range of effective target compositions and therefore film compositions. FePt—Si3N4 films were deposited on natural oxidized silicon wafer or quartz glass substrate at room temperature. The as-deposited film has soft magnetic properties and granular structure with soft magnetic &ggr;-FePt particles dispersed in amorphous Si3N4 matrix.

Abstract: A method of producing SiNx protected amorphous Co-Tb thin films with high coercivity for longitudinal and perpendicular magnetic recording media is described. The method includes magnetron sputtering at controlled sputtering power and sputtering argon gas pressure to form a selective composition of amorphous Co-Tb thin film on a low temperature substrate. After the Co-Tb film is deposited, a protective SiNx layer with thickness of 100 .ANG. was produced on the film. The as-deposited film has an amorphous structure with a high value of coercivity, and its magnetic easy-axis is perpendicular to the film plane. This film can be used as a perpendicular magnetic recording medium. After low temperature annealing at controlled conditions for a desirable temperature and time period in vacuum, the film also has an amorphous structure but its magnetic properties are isotropic. This film can be used as a longitudinal magnetic recording medium.