Abstract: An electric contact structure adopted for an LED comprises a nitride middle layer and an N-type metal electrode layer. The LED includes an N-type semiconductor layer, a light emission layer and a P-type semiconductor layer that are stacked to form a sandwich structure. The nitride middle layer is patterned and formed on the N-type semiconductor layer. The N-type metal electrode layer is formed on the nitride middle layer and prevented from being damaged by diffusion of the metal ions as the nitride middle layer serves as a blocking interface, thus electric property of the N-type semiconductor layer can be maintained stable. The nitride middle layer would not be softened and condensed due to long-term high temperature, thereby is enhanced adhesion. Moreover, the N-type metal electrode layer further can be prevented from peeling off, hence is increased the lifespan of the LED.

Abstract: A thermal stress releasing structure is applied to a light-emitting diode (LED) which includes a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer, and an N-type electrode that are stacked in sequence. The buffer layer includes a plurality of first material layers and a plurality of second material layers. The first material layers and the second material layers are alternately stacked in a staggered manner to form a concave-convex structure in a stacking direction of the first and second material layers. The concave-convex structure is formed in a corrugated shape to function as the thermal stress releasing structure, thus is capable of releasing thermal stress generated by thermal expansion and contraction of the buffer layer in the LED to prevent the buffer layer from damaging a metal layer or an epitaxy layer.

Abstract: A positioning method for real navigation includes steps of receiving a satellite positioning signal; calculating a satellite positioning coordinate according to the satellite positioning signal; capturing a real scene image of a driving path; recognizing whether an indicator exists in the real scene image; if the indicator exists in the real scene image, calculating an auxiliary positioning coordinate according to the indicator; and calculating a current coordinate corresponding to the driving path according to the satellite positioning coordinate and the auxiliary positioning coordinate.

Abstract: A reflection convex mirror structure is applied to a vertical light-emitting diode (LED) which comprises a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. Between the P-type semiconductor layer and the mirror layer, a filler and a mirror are disposed right below the N-type electrode. The filler is made of a transparent material and has a convex surface facing the light-emitting layer. The mirror is formed on the convex surface of the filler. By utilizing the filler and the mirror to form the reflection convex mirror structure, excited light is reflected towards two sides, so that the excited light can dodge the N-type electrode without being shielded to increase light extraction efficiency.

Abstract: An LED with a current diffusion structure comprises an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, an N-type electrode, a P-type electrode and a current blocking layer. The N-type semiconductor layer, light emitting layer and P-type semiconductor layer form a sandwich structure. The N-type and P-type electrodes are respectively arranged on the N-type and P-type semiconductor layers. The current blocking layer has the pattern of the N-type electrode and is embedded inside the N-type semiconductor layer. Thereby not only current generated by the N-type electrode detours the current blocking layer and uniformly passes through the light emitting layer, but also prevents interface effect to increase impedance. Thus is promoted lighting efficiency of LED. Further, as main light-emitting regions of the light emitting layer are far from the N-type electrode, light shielded by the N-type electrode is reduced and illumination of LED is thus enhanced.

Abstract: A laser lift-off method for LEDs forms an elevation difference structure on a conversion substrate corresponding to one isolation zone of an epitaxial layer before epitaxy is formed on the conversion substrate to form the epitaxial layer. The elevation difference structure can release stress between the material interfaces, thus can reduce broken probability while lifting off the conversion substrate and epitaxial layer via laser and further improve production yield.

Abstract: A light emitting diode and its fabricating method are disclosed. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An adhesive layer is utilized to adhere a conductive substrate and the light emitting diode epitaxy structure. Next, the substrate is removed.

Abstract: The present invention discloses a high light-extraction efficiency LED structure, wherein metallic pads and metallic mesh wires made of an aluminum-silver alloy are formed on an LED, whereby the high-reflectivity aluminum-silver alloy makes the light incident on the metallic pads and metallic mesh wires reflected once more or repeatedly and then emitted from the surface or lateral side of the LED, wherefore the present invention can decrease the light loss and increase the light-extraction efficiency.

Abstract: A photoelectric conversion element comprises a solar-energy epitaxial layer, a bond layer and a LED epitaxial layer, which are stacked sequentially. The bond layer has a plurality of holes allowing light to pass. The solar-energy epitaxial layer receives light via the holes and generates electric energy, and an external secondary battery stores the electric energy. When environmental illumination disappears, the LED epitaxial layer is powered by the external secondary battery to emit light. When the photoelectric conversion element of the present invention applies to outdoor traffic signs, advertisement signboards and indicators, they can operate without external power supply.

Abstract: An optimization method for a navigation device includes recording a plurality of coordinate variation data, analyzing the plurality of coordinate variation data to generate an analysis result, generating at least one behavior rule according to the analysis result, and adjusting a navigation result of the navigation device according to the at least one behavior rule.

Abstract: A light emitting diode and its fabricating method are disclosed. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An adhesive layer is utilized to adhere a conductive substrate and the light emitting diode epitaxy structure. Next, the substrate is removed.

Abstract: The present invention discloses a high light-extraction efficiency LED structure, wherein metallic pads and metallic mesh wires made of an aluminum-silver alloy are formed on an LED, whereby the high-reflectivity aluminum-silver alloy makes the light incident on the metallic pads and metallic mesh wires reflected once more or repeatedly and then emitted from the surface or lateral side of the LED, wherefore the present invention can decrease the light loss and increase the light-extraction efficiency.

Abstract: A light emitting diode and its fabricating method are disclosed. A light emitting diode epitaxy structure is formed on a substrate, and then the light emitting diode epitaxy structure is etched to form a recess. The recess is then filled with a transparent dielectric material. An adhesive layer is utilized to adhere a conductive substrate and the light emitting diode epitaxy structure. Next, the substrate is removed.

Abstract: The present invention discloses a laser lift-off method, which applies to lift off a transient substrate from an epitaxial layer grown on the transient substrate after a support substrate having an adhesion metal layer is bonded to the epitaxial layer. Firstly, the epitaxial layer is etched to define separation channels around each chip section, and the epitaxial layer between two separation channels is not etched but preserved to form a separation zone. Each laser illumination area only covers one illuminated chip section, the separation channels surrounding the illuminated chip section, and the separation zones surrounding the illuminated chip section. Thus, the adhesion metal layer on the separation channels is only heated once. Further, the outward stress generated by the illuminated chip section is counterbalanced by the outward stress generated by the illuminated separation zones, and the stress-induced structural damage on the chip section is reduced.

Abstract: A method for monitoring a smart phone includes triggering a network connection function, connecting to a server device via the network connection function to receive an indication signal indicating a lost status of the smart phone, and returning information of the smart phone to the server device via the network connection function when the indication signal indicates that the smart phone is lost.

Abstract: The preset invention discloses a high-brightness LED structure and a method for fabricating the same. The LED structure of the present invention comprises a silicon substrate, a metal adhesion layer, a metal reflection layer, an N-type semiconductor layer, an active layer, and a P-type semiconductor layer, which are sequentially stacked. In the method of the present invention, the P-type semiconductor layer, active layer, N-type semiconductor layer and metal reflection layer are sequentially deposited on an N-type substrate; next, the metal reflection layer is bonded to the metal adhesion layer having been formed on the silicon substrate; then, the N-type substrate is removed. The present invention uses the silicon substrate to replace the light-absorptive GaAs substrate. Therefore, the present invention can promote light efficiency and enhance brightness.

Abstract: A photoelectric conversion element comprises a solar-energy epitaxial layer, a bond layer and a LED epitaxial layer, which are stacked sequentially. The bond layer has a plurality of holes allowing light to pass. The solar-energy epitaxial layer receives light via the holes and generates electric energy, and an external secondary battery stores the electric energy. When environmental illumination disappears, the LED epitaxial layer is powered by the external secondary battery to emit light. When the photoelectric conversion element of the present invention applies to outdoor traffic signs, advertisement signboards and indicators, they can operate without external power supply.

Abstract: This invention this invention provides a light-emitting semiconductor device having enhanced brightness, to ensure even current distribution emitted by a front contact of the light emitting diodes so as to improve the light-emitting efficiency of the active layer. This invention adopts the method to manufacture the light-emitting device, comprising the steps of: forming an active layer on a substrate; forming a capping layer on the active layer to enhance current distribution, where a back contact is located on another side of the substrate and a front contact is located above the capping layer. This invention is characterized by: re-designing the front contact, by reducing the width of a metallic pattern constructing fingers or Mesh lines and increasing the number of the fingers or Mesh lines, so as to resolve the current crowding problem.