Light-emitting semiconductor device having enhanced brightness

- Epistar Corporation

This invention this invention provides a light-emitting semiconductor device having enhanced brightness, to ensure even current distribution emitted by a front contact of the light emitting diodes so as to improve the light-emitting efficiency of the active layer. This invention adopts the method to manufacture the light-emitting device, comprising the steps of: forming an active layer on a substrate; forming a capping layer on the active layer to enhance current distribution, where a back contact is located on another side of the substrate and a front contact is located above the capping layer. This invention is characterized by: re-designing the front contact, by reducing the width of a metallic pattern constructing fingers or Mesh lines and increasing the number of the fingers or Mesh lines, so as to resolve the current crowding problem.

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Description
BACKGROUND OF THE INVENTION

1. Field of the Invention

This invention relates to a light-emitting semiconductor device having enhanced brightness, particularly to one for enhancing current distribution of a front contact in a light emitting diode, so as to enhance the light emitting efficiency of a light-emitting semiconductor.

2. Background of the Invention

The principles lying behind luminance of light emitting diodes relate to passing current sequentially through P-N junctions of a semiconductor to generate light, wherein AlGaInP is implemented in high brightness red, orange, yellow and yellowish green LEDs, AlGaInN is in blue and green LEDs. The process of metal organic vapor phase epitaxy (MOVPE) is commonly adopted in the mass production of the LEDs, while the light-emitting components are of the structures, including: homo-junction (HOMO), single-heterostructure (SH), double-heterostructure (DH), single-quantum well (SQW) and multiple-quantum well (MQW) or other appropriate structures.

The structure of a conventional light emitting diode is illustrated in FIG. 1A, including, from the top down, a front contact 11, an active layer 12, a substrate 10 and a back contact 13. The active layer 12 is formed by a light-emitting material, such as AlGaInP or AlGaInN by adopting MOVPE. After current is injected through the front contact 11, the current will pass through the active layer 12 and the substrate 10 to flow towards the hack contact 13. Light is emitted when the current flows through the active layer 12. However, the low carrier mobility and high resistance of the active layer made of AlGaInP or AlGaInN results in poor electric conductivity of the AlGaInP or AlGaInN. When current is applied to the front contact located above the active layer 12, even if a capping layer 14 (or window layer) is added to enhance the current distribution to make minor improvements to the current distribution, the current is still concentrated at the lower portion of the contact such that the primary emitting regions are mainly concentrated at and next to the lower portion of the contact, as illustrated in FIG. 1B.

The refractive index (n=3.4˜3.5) of most materials for making semiconductor LEDs is greater than the surrounding refractive index (n=1˜1.5, n=1.5 for epoxy). In other words, a great portion of the light emitted by a semiconductor LED is completely reflected back to the semiconductor by the interface between the semiconductor and its exterior epoxy. The portion of the light that has been completely reflected is then absorbed by the active layer, the contacts and the substrate thereby reducing the actual luminance beneficial results of the LED (as shown in FIG. 1C).

To enhance the current distribution, improvements have been made to the structures and materials, such as that disclosed in U.S. Pat. No. 5,008,718 by Fletcher et al., where a capping layer 15 (or window layer), made of GaP, GaAsP and AlGaAs having a low resistance value and being pervious to light, is added between the front contact and active layer, as shown in FIG. 1D. The objective of using this capping layer is to enhance the current distribution flowing from the front contact. As described in the '718 patent, to improve the current distribution, the capping layer is preferred to be in the range from 150 to 200 micrometers thick to enhance the luminous intensity by 5 to 10 times. However, the increasing thickness of the capping layer also increases the time and cost required for MOVPE epitaxy thereby significantly increasing the cost of the epitaxy. In addition, the distribution ability is extremely relevant to the thickness. Hence, to ensure even current distribution, the thickness must be at least 10 micrometers or the current crowding problem cannot be effectively resolved.

Another measure is to change the design of contacts. F. A. Kish and R. M. Fletcher suggested re-designing the contacts to include fingers 16 (as shown in FIG. 1E) or extended with Mesh lines 17 (as shown in FIG. 1F), to resolve the current crowding problem in LEDs. The result, however, is not satisfactory because the inherent width of the Mesh lines extending from the contacts usually ranges from 5 to 25 micrometers to ensure easy production. The number of fingers or Mesh lines of such a width must be limited in order to prevent excessive masking of light, such that the light emitted below the contacts would all be masked by the fingers or Mesh lines. Since the current located exactly below the contacts are most intensive to result in intensive illumination, the metal meshes mask the regions that are intensively illuminated. However, reducing the number the metal meshes will cause poor current distribution at some of the luminous regions E so as to affect the light-emitting effects (as shown in FIGS. 1G to 1H).

To improve the current distribution, this invention discloses another design for the contacts so as to provide even current distribution and to reduce the regions masked by the contacts thereby enhancing the brightness.

SUMMARY OF THE INVENTION

It is a primary objective of this invention to provide a light-emitting semiconductor device having enhanced brightness. The line width of the meshes of the metallic patterns constructing the front contact ranges from 0.1 to 5 micrometers, thereby enhancing the light-emitting efficiency.

It is another objective of this invention to provide a light-emitting semiconductor device having enhanced brightness. The metallic patterns constructing the front contact may be meshed, dotted, checkered or another other geometrical patterns that are evenly distributed above the entire active layer.

It is a further objective of this invention is to provide a light-emitting semiconductor device having enhanced brightness. The metallic patterns constructing the front contact does not mask the light illuminated by the active layer because the line width of the metallic patterns is less than 5 micrometers.

To achieve the above objectives, this invention adopts the method comprising the steps of: forming an active layer on a substrate; forming a capping layer on the active layer to enhance current distribution, where a back contact is located on another side of the substrate and a front contact is located above the capping layer. This invention is characterized in that, the front contact is re-designed to reduce the width of fingers or Mesh lines of metallic patterns and to increase the number of the fingers or Mesh lines, so as to resolve the current crowding problem. When the width of fingers or Mesh lines in metallic pattern is shrunk to about 2 micrometers, the light emitted is still visible through the capping layer at a light-emitting dispersion angle between 7.6 and 18 degrees, even the region of the active layer is exactly below the Mesh lines, where the region is the most current intensive region. Therefore the light-emitting efficiency is significantly improved.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other modifications and advantages will become even more apparent from the following detained description of preferred embodiments of the invention and from the drawings in which:

FIG. 1A is a cross-sectional view illustrating a conventional light emitting diode structure.

FIG. 1B is a cross-sectional view illustrating the current distribution within a conventional light emitting diode structure.

FIG. 1C is a cross-sectional view illustrating illumination of light within a conventional light emitting diode structure.

FIG. 1D is a cross-sectional view illustrating a conventional light emitting with an addition of a capping layer structure.

FIG. 1E is a top view illustrating fingers extended from a front contact within a conventional light emitting diode structure;

FIG. 1F is a top plane view illustrating Mesh lines extended from a front contact within a conventional light emitting diode structure.

FIG. 1G is a cross-sectional view illustrating the current distribution within a conventional light emitting diode structure having fingers of Meshed lines extended form a front contact.

FIG. 1H is a cross-sectional view illustrating illumination of light within a conventional light emitting diode structure having fingers of Meshes lines extended from a front contact.

FIG. 2A is a cross-sectional view illustrating the current distribution within a first embodiment of a light emitting diode according to this invention.

FIG. 2B is a top plane illustrating a metallic mesh formed by a front contact within a light emitting diode structure.

FIG. 2C is a cross-sectional view illustrating the light emitting structure located exactly below the contacts in prior art.

FIG. 2D is a cross-sectional view illustrating a second embodiment of a light emitting diodes according to this invention.

FIG. 2E is a view illustrating metallic dots formed by a front contact within a light emitting diode structure.

 DETAILED DESCRIPTION OF THE INVENTION PREFERRED EMBODIMENTS

This invention may be implemented in enhancement of current distribution in light emitting diodes, by re-designing the front contact to enhance the light-emitting efficiency. The material of an active layer and a substrate may be modified based on the light wavelength of diodes. However, such modifications are not the features of this invention. In this invention, all examples use the term “active layer” to represent the primary structure of the LED component, including homo-junction, single-heterostructure, double-heterostructure, single-quantum well or multiple-quantum well.

EXAMPLE I

In Example I, a light emitting diodes (LED) is used to describe the features of this invention. FIG. 2A is a cross-sectional view of a light emitting diode. First, an active layer 120 is formed above a substrate 100. The active layer may be of a double-heterostructure or a quantum well structure to enhance the light-emitting efficiency of the diode. Then, a capping layer 140 made of GaP, AlGaAs or ITO is then added above the active layer to improve the current distribution. A back contact 130 is located on another side of the substrate 100, and a front contact 210 is located above the capping layer 140.

In detail, the material of the substrate 100 is dependent on the material of the active layer 120. When the active layer 120 is made of AlGaInP or AlGaAs, GaAs is selected to form the substrate. When the active layer 120 is made of AlGaInN. Any of sapphire, SiC, MgAlO4, ZnO, LiG2O2 and LiAlO2 may be selected to form the substrate. The active layer is preferably between about 0.3 to 3 micrometers thick. The capping layer 140 is between about 10 and 50 micrometers thick. Both the active layer 120 and the capping layer 140 are formed by adopting MOVPE or Molecular Beam Epitaxy (MBE).

This invention discloses an effective measure to resolve the current problem. The front contact is re-designed to reduce the width of fingers or Mesh line in the metallic pattern associated with increasing the number of the fingers or Mesh lines, the current crowding problem and the light-emitting efficiency enhancement of the light-emitting diode are thus improved. The metallic pattern shown in FIGS. 2A and 2B are only an exemplified pattern, which does not intend to limit the scope of this invention.

FIG. 2B illustrates a top view of the diode. The contact 110 implemented in Example I still retains a metallic bonding pad for contacting the exterior. However, next to the contact 110 is completely arranged with metallic meshes 210 above the active layer 120. The metallic meshes 210 interconnect with the contact 110, to jointly serve as the front contact of Example I.

In a conventional light emitting diodes, the front contact has Mesh lines whose width are mostly in the range of 5 to 25 micrometers. As a result, the current can only be distributed to about 40 micrometers away from the Mesh lines, which leave a light-emitting depletion region of greater than 80 micrometers between two Mesh lines. Generally, the current just below the contacts is the most intensive region than others, as is shown in FIG. 2C. If the capping layer 15 has a thickness of 15 micrometers and the Mesh line 11 of the front contact each has a width of 15 micrometers and is spaced between two Mesh lines by 60 micrometers and when the current is spread from a point A in the active layer 12 that is located exactly below the Mesh line 11, the minimum light-emitting dispersion angle must be greater than a halved width of the front contact, or the light emitted from point A in the active layer 12 will be masked by the Mesh line 11. The minimum light-emitting dispersion angle θm can be calculated as follows:

tan θm=7.5/15=1/2→θm=26.5° for thickness of the capping layer is 15 μm and a halved width of the mesh line 11 of the front contact is 7.5 μm.

However, for most of the material used for light emitting diodes, the total reflection angle is approximately 18 degrees. In other words, when the incident angle θ of the light is greater than 18 degrees, the light will be totally reflected backward to the semiconductor while meeting the semiconductor surface. When the light generated in the light-emitting layer is dispersed by radiation, complete reflection will be observed outside the range of θc. On the other hand, light will penetrate through the capping layer within the range of θc. Therefore, when the width of the mesh is greater than 15 micrometers, those light emitted exactly below the mesh will be completely blocked by the mesh, thereby affecting the light-emitting efficiency significantly.

According to the present invention, each of the coarse Mesh lines shown in FIG. 1G is divided imp several of equal-distant metallic meshes 210, as shown in FIG. 2B. The line width of the metallic meshes 210 suggested in Example I are dimensioned to be between about 0.5 to 5 micrometers, which are evenly distributed above the substrate. Base on the above calculations, if the line width of the meshes is dimensioned down to 2 micrometers with a capping layer having a thickness of 15 micrometers, the minimum light-emitting dispersion angle θm is calculated by: tan θm=2/1→θm=7.6°.

The minimum light-emitting dispersion angle θm is significantly reduced. The light emitted from the current intensive region that is located exactly located below the contact, can now penetrate through the capping layer if the light-emitting dispersion angle is within the range of θ32 7.6 to 18 degrees. Consequently, the light-emitting efficiency will be enhanced significantly.

EXAMPLE II

A further light emitting diode (LED) embodiment according to the present invention is shown in FIG. 2D, the Example II. FIG. 2D is a cross-sectional view of a light emitting diode, having a back contact, a substrate, an active layer and a capping layer that have the same structures as those in Example I. According to this invention, the substrate may a semiconductor substrate or any other appropriate substrates dependent on the applications of the LED.

Example II is characterized by a front contact that is divided into two layers, as shown in FIG. 2E. The metallic bonding pad—a first layer 110 of the front contact, is the same as that adopted in the conventional light emitting diodes. A second layer 220 of the front contact is located below the first layer 110 and embedded in an ITO layer 230 and in a form of numerous dots so as to resolve the current crowding problem and to enhance the light-emitting efficiency of the light emitting diode. The dots are each dimensioned to 0.1 to 5 micrometers and evenly distributed above the active layer. The pattern of metallic dots significantly reduce the region where the light emitted by the active layer is masked by the front contact, and enables even current distribution to enhance the light-emitting efficiency. Other than metallic dots in Example II, the second layer 220 may be in a form of the metallic meshes as suggested in Example I or any other metallic patterns.

The spirits of this invention, however, reside in the arrangement of the front contact above the active layer, with the metallic patterns constructing the front contact being dimensioned to 0.1 to 5 micrometers. So long as the metallic patterns having line width or dots are dimensioned to be sufficiently small so as to prevent the active layer just under the mesh lines or dots from masking most of the light emitted, the metallic patterns may be configured to any geometrical designs.

This invention is related to a novel creation that makes a breakthrough in the art. Aforementioned explanations, however, are directed to the description of preferred embodiments according to this invention. Since this invention is not limited to the specific details described in connection with the preferred embodiments, changes and implementations to certain features of the preferred embodiments without altering the overall basic function of the invention are contemplated within the scope of the appended claims.

Claims

1. A light-emitting semiconductor device having enhanced brightness, comprising:

(a) a semiconductor substrate;
(b) an active layer located above the semiconductor substrate, for inducing illumination of emitting light;
(c) a conductive back contact located below capping layer formed on the semiconductor substrate active layer; and
(d) a conductive front contact located above the active layer, the front contact including a an ohmic contact metallic bonding pad and ohmic contact mesh pattern having a minimum dimension ranging line width between about 0.1 and 5 to 4 micrometers and distributed above the active formed on the capping layer, and
(e) a bonding pad arranged on top of the ohmic contact metallic mesh pattern,
wherein the ohmic contact metallic mesh pattern interconnects with the bonding pad.

2. The light-emitting semiconductor device having enhanced brightness of claim 1, wherein the semiconductor substrate is comprises GaAs.

3. The light-emitting semiconductor device having enhanced brightness of claim 2 1, wherein the active layer is comprises AlGaInP or AlGaAs.

4. The light-emitting semiconductor device having enhanced brightness of claim 2, wherein the active layer is AlGaAs.

5. The light-emitting semiconductor device having enhanced brightness of claim 1, wherein the semiconductor substrate is comprises sapphire.

6. The light-emitting semiconductor device having enhanced brightness of claim 4 1, wherein the active layer is comprises AlGaInN.

7. The light-emitting semiconductor device having enhanced brightness of claim 1, wherein the ohmic contact metallic patterns of the front contact mesh pattern is configured to an interconnected mesh and in electrical connection with the metallic bonding pad pattern.

8. The light-emitting semiconductor device having enhanced brightness of claim 7, wherein the metallic patterns of the front contact are embedded and interconnected in an ITO layer.

9. A light-emitting device having enhanced brightness, comprising:

(a) a substrate;
(b) an active layer located above the substrate, for inducing illumination of light;
(c) a back contact located below the substrate; and
(d) a front contact located above the active layer, the front contact including a metallic bonding pad and ohmic contact metallic patterns, the metallic patterns of the front contact having a minimum dimension ranging between 0.1 and 5 micrometers and distributed above the active layer.

10. The light-emitting semiconductor device of claim 1, wherein the line width of the metallic mesh pattern is less than 1 micrometers.

11. The light-emitting semiconductor device of claim 1, wherein the capping layer comprises one material selected from the group consisting of GaP, AlGaAs, and ITO.

12. A light-emitting semiconductor device comprising:

(a) a substrate;
(b) an active layer located above the substrate for emitting light;
(c) a capping layer formed on the active layer;
(d) an ohmic contact metallic mesh pattern having a line width between about 0.1 to 1 micrometer formed on the capping layer; and
(e) a bonding pad arranged on top of the ohmic contact metallic mesh pattern,
wherein the ohmic contact metallic mesh pattern interconnects with the bonding pad.

13. The light-emitting semiconductor device of claim 1, wherein the ohmic contact metallic mesh pattern comprises a plurality of equal-distance metallic lines.

14. The light-emitting semiconductor device of claim 1, further comprising:

an ITO layer formed between the capping layer and the bonding pad, the ohmic contact metallic mesh pattern being embedded in the ITO layer.

15. The light-emitting semiconductor device of claim 1, wherein the ohmic contact metallic pattern is in a form selected from the group consisting of a number of fingers and meshes.

16. The light-emitting semiconductor device of claim 1, wherein the ohmic contact metallic pattern is evenly distributed above the substrate.

Referenced Cited
U.S. Patent Documents
5008718 April 16, 1991 Fletcher et al.
5488235 January 30, 1996 Nozaki et al.
6107644 August 22, 2000 Shakuda et al.
6465808 October 15, 2002 Lin
6522063 February 18, 2003 Chen et al.
6825499 November 30, 2004 Nakajima et al.
6972437 December 6, 2005 Kim
20040065891 April 8, 2004 Shakuda et al.
20040169184 September 2, 2004 Udagawa et al.
Foreign Patent Documents
10-215034 August 1998 JP
WO 2004/112157 December 2004 WO
Patent History
Patent number: RE44429
Type: Grant
Filed: Oct 25, 2007
Date of Patent: Aug 13, 2013
Assignee: Epistar Corporation (Hsinchu)
Inventors: Wei-En Chien (Chia-I), Chih-Sung Chang (Hsinchu), Tzer-Perng Chen (Hsinchu), Pai-Hsiang Wang (Hsinchu)
Primary Examiner: Cuong Q Nguyen
Application Number: 11/976,615