Patents by Inventor Chih-Tsung Shih

Chih-Tsung Shih has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method to reduce native defect printability
    Patent number: 10824080
    Abstract: A method includes reducing refractive index of an environment at or adjacent an extreme ultraviolet (EUV) mask to below 1.0. The EUV mask is in an EUV lithography system that forms a projection beam of EUV radiation using EUV radiation emitted from a radiation source. The method further includes exposing the EUV mask to the projection beam of EUV radiation.
    Type: Grant
    Filed: October 24, 2019
    Date of Patent: November 3, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chih-Tsung Shih, Tsung-Chih Chien, Tsung Chuan Lee
  • SEMICONDUCTOR APPARATUS AND METHOD OF OPERATING THE SAME
    Publication number: 20200341388
    Abstract: A method for preventing photomask contamination includes generating a first electric field from an electrostatic chuck to attract a charged particle onto the electrostatic chuck, controlling the first electric field to detach the charged particle from the electrostatic chuck, and generating a second electric field below the electrostatic chuck to attract the charged particle.
    Type: Application
    Filed: April 29, 2019
    Publication date: October 29, 2020
    Inventors: Jui-Chieh CHEN, Tsung-Chih CHIEN, Chih-Tsung SHIH, Tsung-Chuan LEE
  • Interconnection structure and methods of fabrication the same
    Patent number: 10756016
    Abstract: A method includes receiving a substrate having a substrate feature; forming a first material layer over the substrate and in physical contact with the substrate feature; forming an etch mask over the first material layer; and applying a dynamic-angle (DA) plasma etching process to the first material layer through the etch mask to form a first material feature. Plasma flux of the DA plasma etching process has an angle of incidence with respect to a normal of the first material layer and the angle of incidence changes in a dynamic mode during the DA plasma etching process.
    Type: Grant
    Filed: December 19, 2019
    Date of Patent: August 25, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shih-Ming Chang, Chih-Tsung Shih
  • METHOD OF CONTROLLING RETICLE MASKING BLADE POSITIONING TO MINIMIZE IMPACT ON CRITICAL DIMENSION UNIFORMITY AND DEVICE FOR CONTROLLING RETICLE MASKING BLADE POSITION
    Publication number: 20200264515
    Abstract: A method of controlling reticle masking blade positioning to minimize the impact on critical dimension uniformity includes determining a target location of a reticle masking blade relative to a reflective reticle and positioning the reticle masking blade at the target location. A position of the reticle masking blade is monitored during an imaging operation. The position of the reticle masking blade is compared with the target location and the position of the reticle masking blade is adjusted if the position of the reticle masking blade is outside a tolerance of the target location.
    Type: Application
    Filed: May 4, 2020
    Publication date: August 20, 2020
    Inventors: Hung-Wen CHO, Fu-Jye LIANG, Chun-Kuang CHEN, Chih-Tsung SHIH, Li-Jui CHEN, Po-Chung CHENG, Chin-Hsiang LIN
  • High Durability Extreme Ultraviolet Photomask
    Publication number: 20200264503
    Abstract: The present disclosure provides an embodiment of a reflective mask that includes a substrate; a reflective multilayer disposed on the substrate; an anti-oxidation barrier layer disposed on the reflective multilayer and the anti-oxidation barrier layer is in amorphous structure with an average interatomic distance less than an oxygen diameter; and an absorber layer disposed on the anti-oxidation barrier layer and patterned according to an integrated circuit layout.
    Type: Application
    Filed: May 4, 2020
    Publication date: August 20, 2020
    Inventors: Chia-Hao Yu, Chi-Lun Lu, Chih-Tsung Shih, Ching-Wei Shen, Jeng-Horng Chen
  • Mask with multilayer structure and manufacturing method by using the same
    Patent number: 10747097
    Abstract: The present disclosure provides a photolithography mask. The photolithography mask includes a substrate that contains a low thermal expansion material (LTEM). A multilayer (ML) structure is disposed over the substrate. The ML structure is configured to reflect radiation. The ML structure contains a plurality of interleaving film pairs. Each film pair includes a first film and a second film. The first film and the second film have different material compositions. Each film pair has a respective thickness. For at least a subset of the plurality of the film pairs, the respective thicknesses of the film pairs change randomly along a predefined direction.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: August 18, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Tsung Shih, Jeng-Horng Chen, Shinn-Sheng Yu, Anthony Yen
  • Layout modification method for exposure manufacturing process
    Patent number: 10720419
    Abstract: A layout modification method for fabricating a semiconductor device is provided. Uniformity of critical dimensions of a first portion and a second portion in a patterned layer is calculated by using a layout for an exposure manufacturing process to produce the semiconductor device. The second portion is adjacent to the first portion, and a width of the second portion equals a penumbra size of the exposure manufacturing process. The penumbra size is utilized to indicate which area of the patterned layer is affected by light leakage exposure from another exposure manufacturing process. Non-uniformity between the first and second portions of the patterned layer is compensated according to the uniformity of critical dimensions to generate a modified layout.
    Type: Grant
    Filed: July 26, 2019
    Date of Patent: July 21, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hung-Wen Cho, Fu-Jye Liang, Chun-Kuang Chen, Chih-Tsung Shih, Li-Jui Chen, Po-Chung Cheng, Chin-Hsiang Lin
  • Method and apparatus for collecting information used in image-error compensation
    Patent number: 10712651
    Abstract: A reticle used for collecting information for image-error compensation is provided. The reticle includes a first black border structure and a second black border structure formed over a substrate. The first and second black borders are concentric with a center of the substrate. The reticle further includes a first image structure and a second image structure formed over the substrate. The first and second image structures each has patterns representing features to be patterned on a semiconductor wafer. In a direction away from the center of the substrate, the second image structure, the second black border structure, the first image structure and the first black border structure are arranged in order.
    Type: Grant
    Filed: February 27, 2018
    Date of Patent: July 14, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hung-Wen Cho, Fu-Jye Liang, Chun-Kuang Chen, Chih-Tsung Shih, Li-Jui Chen, Po-Chung Cheng, Chin-Hsiang Lin
  • METHODS AND APPARATUS FOR REMOVING CONTAMINATION FROM LITHOGRAPHIC TOOL
    Publication number: 20200150550
    Abstract: Embodiments described herein provide a method for cleaning contamination from sensors in a lithography tool without requiring recalibrating the lithography tool. More particularly, embodiments described herein teach cleaning the sensors using hydrogen radicals for a short period while the performance drifting is still above the drift tolerance. After a cleaning process described herein, the lithography tool can resume production without recalibration.
    Type: Application
    Filed: January 13, 2020
    Publication date: May 14, 2020
    Inventors: Zi-Wen CHEN, Po-Chung CHENG, Chih-Tsung SHIH, Li-Jui CHEN, Shih-Chang SHIH
  • High durability extreme ultraviolet photomask
    Patent number: 10642148
    Abstract: The present disclosure provides an embodiment of a reflective mask that includes a substrate; a reflective multilayer disposed on the substrate; an anti-oxidation barrier layer disposed on the reflective multilayer and the anti-oxidation barrier layer is in amorphous structure with an average interatomic distance less than an oxygen diameter; and an absorber layer disposed on the anti-oxidation barrier layer and patterned according to an integrated circuit layout.
    Type: Grant
    Filed: August 27, 2018
    Date of Patent: May 5, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Chia-Hao Yu, Chi-Lun Lu, Chih-Tsung Shih, Ching-Wei Shen, Jeng-Horng Chen
  • Method of controlling reticle masking blade positioning to minimize impact on critical dimension uniformity and device for controlling reticle masking blade positioning
    Patent number: 10642158
    Abstract: A method of controlling reticle masking blade positioning to minimize the impact on critical dimension uniformity includes determining a target location of a reticle masking blade relative to a reflective reticle and positioning the reticle masking blade at the target location. A position of the reticle masking blade is monitored during an imaging operation. The position of the reticle masking blade is compared with the target location and the position of the reticle masking blade is adjusted if the position of the reticle masking blade is outside a tolerance of the target location.
    Type: Grant
    Filed: October 3, 2018
    Date of Patent: May 5, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hung-Wen Cho, Fu-Jye Liang, Chun-Kuang Chen, Chih-Tsung Shih, Li-Jui Chen, Po-Chung Cheng, Chin-Hsiang Lin
  • METHOD OF REDUCING UNDESIRED LIGHT INFLUENCE IN EXTREME ULTRAVIOLET EXPOSURE
    Publication number: 20200133127
    Abstract: A method of generating a layout pattern includes disposing a photoresist layer of a resist material on a substrate and disposing a top layer over of the photoresist layer. The top layer is transparent for extreme ultraviolet (EUV) radiation and the top layer is opaque for deep ultraviolet (DUV) radiation. The method further includes irradiating the photoresist layer with radiation generated from an EUV radiation source. The radiation passes through the top layer to expose the photoresist layer.
    Type: Application
    Filed: October 24, 2019
    Publication date: April 30, 2020
    Inventors: Chih-Tsung SHIH, Chen-Ming WANG, Yahru CHENG, Bo-Tsun LIU, Tsung Chuan LEE
  • METHOD TO REDUCE NATIVE DEFECT PRINTABILITY
    Publication number: 20200133141
    Abstract: A method includes reducing refractive index of an environment at or adjacent an extreme ultraviolet (EUV) mask to below 1.0. The EUV mask is in an EUV lithography system that forms a projection beam of EUV radiation using EUV radiation emitted from a radiation source. The method further includes exposing the EUV mask to the projection beam of EUV radiation.
    Type: Application
    Filed: October 24, 2019
    Publication date: April 30, 2020
    Inventors: Chih-Tsung SHIH, Tsung-Chih CHIEN, Tsung Chuan LEE
  • Interconnection Structure and Methods of Fabrication the Same
    Publication number: 20200126914
    Abstract: A method includes receiving a substrate having a substrate feature; forming a first material layer over the substrate and in physical contact with the substrate feature; forming an etch mask over the first material layer; and applying a dynamic-angle (DA) plasma etching process to the first material layer through the etch mask to form a first material feature. Plasma flux of the DA plasma etching process has an angle of incidence with respect to a normal of the first material layer and the angle of incidence changes in a dynamic mode during the DA plasma etching process.
    Type: Application
    Filed: December 19, 2019
    Publication date: April 23, 2020
    Inventors: Shih-Ming Chang, Chih-Tsung Shih
  • EXTREME ULTRAVIOLET MASK AND METHOD OF MANUFACTURING THE SAME
    Publication number: 20200073225
    Abstract: An extreme ultraviolet (EUV) mask includes a multilayer Mo/Si stack comprising alternating Mo and Si layers disposed over a first major surface of a mask substrate, a capping layer made of ruthenium (Ru) disposed over the multilayer Mo/Si stack, and an absorber layer on the capping layer. The EUV mask includes a circuit pattern area and a particle attractive area, and the capping layer is exposed at bottoms of patterns in the particle attractive area.
    Type: Application
    Filed: August 2, 2019
    Publication date: March 5, 2020
    Inventors: Chih-Tsung SHIH, Tsung-Chih CHIEN, Shih-Chi FU, Chi-Hua FU, Kuotang CHENG, Bo-Tsun LIU, Tsung Chuan LEE
  • METHOD FOR DETECTING EUV PELLICLE RUPTURE
    Publication number: 20200057383
    Abstract: An extreme ultraviolet (EUV) lithography system includes an extreme ultraviolet (EUV) radiation source to emit EUV radiation, a collector for collecting the EUV radiation and focusing the EUV radiation, a reticle stage for supporting a reticle including a pellicle for exposure to the EUV radiation, and at least one sensor configured to detect particles generated due to breakage of the pellicle.
    Type: Application
    Filed: August 14, 2019
    Publication date: February 20, 2020
    Inventors: Chih-Tsung SHIH, Bo-Tsun LIU, Tsung Chuan LEE
  • Pellicle for EUV Mask and Fabrication Thereof
    Publication number: 20200050100
    Abstract: The present disclosure provides a method in accordance with some embodiments. A wafer is grinded from a back side. The wafer is inserted into an opening defined by a frame holder. The frame holder is attached to a carrier through a temporary layer. A front side of the wafer is attached to the temporary layer. Thereafter, the wafer is etched from the back side until the wafer reaches a predetermined thickness. Thereafter, the frame holder and the wafer therein are separated from the temporary layer and the carrier.
    Type: Application
    Filed: October 18, 2019
    Publication date: February 13, 2020
    Inventors: Chih-Tsung Shih, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
  • Methods and apparatus for removing contamination from lithographic tool
    Patent number: 10534279
    Abstract: Embodiments described herein provide a method for cleaning contamination from sensors in a lithography tool without requiring recalibrating the lithography tool. More particularly, embodiments described herein teach cleaning the sensors using hydrogen radicals for a short period while the performance drifting is still above the drift tolerance. After a cleaning process described herein, the lithography tool can resume production without recalibration.
    Type: Grant
    Filed: October 16, 2019
    Date of Patent: January 14, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Zi-Wen Chen, Po-Chung Cheng, Chih-Tsung Shih, Li-Jui Chen, Shih-Chang Shih
  • Pellicle for EUV mask and fabrication thereof
    Patent number: 10520806
    Abstract: The present disclosure provides a method in accordance with some embodiments. A wafer is grinded from a back side. The wafer is inserted into an opening defined by a frame holder. The frame holder is attached to a carrier through a temporary layer. A front side of the wafer is attached to the temporary layer. Thereafter, the wafer is etched from the back side until the wafer reaches a predetermined thickness. Thereafter, the frame holder and the wafer therein are separated from the temporary layer and the carrier.
    Type: Grant
    Filed: July 23, 2018
    Date of Patent: December 31, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chih-Tsung Shih, Shinn-Sheng Yu, Jeng-Horng Chen, Anthony Yen
  • Interconnection structure and methods of fabrication the same
    Patent number: 10522464
    Abstract: A method includes receiving a substrate having a substrate feature; forming a first material layer over the substrate and in physical contact with the substrate feature; forming an etch mask over the first material layer; and applying a dynamic-angle (DA) plasma etching process to the first material layer through the etch mask to form a first material feature. Plasma flux of the DA plasma etching process has an angle of incidence with respect to a normal of the first material layer and the angle of incidence changes in a dynamic mode during the DA plasma etching process.
    Type: Grant
    Filed: October 4, 2017
    Date of Patent: December 31, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shih-Ming Chang, Chih-Tsung Shih