Abstract: A device includes an interconnect structure, a barrier multi-layer structure, an oxide layer, a pad metal layer, and a passivation layer. The barrier multi-layer structure is over the interconnect structure, the barrier multi-layer structure includes a first metal nitride layer and a second metal nitride layer over the first metal nitride layer. The oxide layer is over the barrier multi-layer structure, in which the oxide layer is an oxide of the second metal nitride layer of the barrier multi-layer structure. The pad metal layer is over the oxide layer. The passivation layer is in contact with the barrier multi-layer structure, the oxide layer, and the pad metal layer.

Abstract: A method embodiment includes forming a sacrificial film layer over a top surface of a die, the die having a contact pad at the top surface. The die is attached to a carrier, and a molding compound is formed over the die and the sacrificial film layer. The molding compound extends along sidewalls of the die. The sacrificial film layer is exposed. The contact pad is exposed by removing at least a portion of the sacrificial film layer. A first polymer layer is formed over the die, and a redistribution layer (RDL) is formed over the die and electrically connects to the contact pad.

Abstract: An integrated circuit apparatus and a power distribution network thereof are provided. The power distribution network includes a top wiring layer, a bottom wiring layer, and a first conductive path. The top wiring layer includes a first top trace and a second top trace extending along a first direction. The bottom wiring layer includes a first bottom trace extending along a second direction. The first bottom trace has an electric potential equal to that of the first top trace, but different from that of the second top trace. The first conductive path connected between the first top and bottom traces includes a first upper conductive structure and a first lower conductive structure that are located directly under the first top trace and the second top trace, respectively. A signal wire preselected region is defined between the first upper conductive structure and the first bottom trace.

Abstract: A semiconductor package includes a substrate. The semiconductor package further includes a plurality of metal pillars on a top surface of the substrate. The semiconductor package further includes a semiconductor component on the substrate, wherein the semiconductor component includes one or more dies, and the semiconductor component has a top surface. The semiconductor package further includes a mold compound encapsulating the plurality of metal pillars and the semiconductor component, wherein the mold compound has a top surface above the top surface of the semiconductor component. The semiconductor package further includes an interposer coupled to the plurality of metal pillars.

Abstract: A conductive interconnect structure includes a contact pad; a conductive body connected to the contact pad at a first end; and a conductive layer positioned on a second end of the conductive body. The conductive body has a longitudinal direction perpendicular to a surface of the contact pad. The conductive body has an average grain size (a) on a cross sectional plane (Plane A) whose normal is perpendicular to the longitudinal direction of the conductive body. The conductive layer has an average grain size (b) on Plane A. The conductive body and the conductive layer are composed of same material, and the average grain size (a) is greater than the average grain size (b).

Abstract: A method for forming a chip package is provided. The method includes disposing a semiconductor die over a carrier substrate and forming a protection layer over the carrier substrate to surround the semiconductor die. The method also includes forming a dielectric layer over the protection layer and the semiconductor die. The method further includes planarizing a first portion of the dielectric layer and planarizing a second portion of the dielectric layer after the first portion of the dielectric layer is planarized. In addition, the method includes forming a conductive layer over the dielectric layer after the first portion and the second portion of the dielectric layer are planarized.

Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a gate stack over the semiconductor substrate. The gate stack includes a gate dielectric layer and a work function layer. The gate dielectric layer is between the semiconductor substrate and the work function layer. The semiconductor device structure also includes a halogen source layer. The gate dielectric layer is between the semiconductor substrate and the halogen source layer.

Abstract: A package includes a package component, which further includes a top surface and a metal pad at the top surface of the package component. The package further includes a non-reflowable electrical connector over and bonded to the metal pad, and a molding material over the package component. The non-reflowable electrical connector is molded in the molding material and in contact with the molding material. The non-reflowable electrical connector has a top surface lower than a top surface of the molding compound.

Abstract: A brushless DC motor fan is provided. The brushless DC motor fan includes a rotor and a stator module. The rotor has a shaft disposed on an inner side of the stator module and rotating relative to the stator module. The stator module has a coreless coil and a lead frame, wherein the lead frame includes six pins electrically connected to the coreless coil.

Abstract: The present invention is to provide an anti-glare film. The anti-glare film comprises a transparent substrate and an anti-glare layer formed on a surface of the substrate, wherein the anti-glare coating layer comprises 75 to 90 weight percent of an acrylic-based hard coating composition, 0.01 weight percent to 10 weight percent of silica nanoparticles and 5 weight percent to 20 weight percent of organic microparticles. The anti-glare film provides a satisfied anti-glare property and a surface fineness, and especially the anti-glare property at the wide viewing angle to enhance the visibility of the display.

Abstract: The present invention is to provide an anti-glare film. The anti-glare film comprises a polyethylene terephthalate (PET) substrate and an anti-glare layer formed on a surface of the PET substrate, wherein the anti-glare coating layer comprises 75 to 90 weight parts of an acrylic-based resin, 0.01 to 10 weight parts of silica nanoparticles 5 to 20 weight parts of organic microparticles and 0.05 to 2 weight parts of leveling agent. The anti-glare film has a total haze ranging between 35% and 50%, a surface haze ranging between 10% and 15% and a gloss at a viewing angle of 60 degrees between 30% and 50% thereof. The anti-glare film can provide satisfactory anti-glare properties, high precision, surface fineness, no flicker, good visibility and also fine adhesion between layers.

Abstract: A package includes a first redistribution structure, a bridge structure, an adhesive layer, a plurality of conductive pillars, an encapsulant, a first die, and a second die. The bridge structure is disposed on the first redistribution structure. The adhesive layer is disposed between the bridge structure and the first redistribution structure. The conductive pillars surround the bridge structure. A height of the conductive pillars is substantially equal to a sum of a height of the adhesive layer and a height of the bridge structure. The encapsulant encapsulates the bridge structure, the adhesive layer, and the conductive pillars. The first die and the second die are disposed over the bridge structure. The first die is electrically connected to the second die through the bridge structure. The first die and the second die are electrically connected to the first redistribution structure through the conductive pillars.

Abstract: A first protective layer is formed on a first die and a second die, and openings are formed within the first protective layer. The first die and the second die are encapsulated such that the encapsulant is thicker than the first die and the second die, and vias are formed within the openings. A redistribution layer can also be formed to extend over the encapsulant, and the first die may be separated from the second die.

Abstract: An apparatus and method for engaging a mounting panel of a computer device includes a bracket, as well as a lever and slider mechanism connected to the bracket. The lever and slider mechanism includes a base, a wedge slider, a lever, a geared bar, and a biasing element. The base is connected to the bracket. The wedge slider is connected to the bracket and disposed immediately below the base. Rotating the lever from a first position to a second position causes a gear to engage the geared bar, causing the geared bar to move vertically. The rotating allows movement along the contact between an angled end of the geared bar and a wedged end protrusion of the wedge slider such that the biasing element pushes the wedge slider away from the bracket and allows the wedge slider to engage an opening in a mounting panel.

Abstract: A semiconductor device and method for forming the semiconductor device is provided. The semiconductor device includes an integrated circuit having through vias adjacent to the integrated circuit die, wherein a molding compound is interposed between the integrated circuit die and the through vias. The through vias have a projection extending through a patterned layer, and the through vias may be offset from a surface of the patterned layer. The recess may be formed by selectively removing a seed layer used to form the through vias.

Abstract: A semiconductor structure includes a die embedded in a molding material, the die having die connectors on a first side; a first redistribution structure at the first side of the die, the first redistribution structure being electrically coupled to the die through the die connectors; a second redistribution structure at a second side of the die opposing the first side; and a thermally conductive material in the second redistribution structure, the die being interposed between the thermally conductive material and the first redistribution structure, the thermally conductive material extending through the second redistribution structure, and the thermally conductive material being electrically isolated.

Abstract: A method for forming a bond pad structure includes forming an interconnect structure on a semiconductor device, forming a passivation layer on the interconnect structure, forming at least one opening through the passivation layer, forming an oxidation layer at least in the opening, and forming a pad metal layer on the oxidation layer. A portion of the interconnect structure is exposed by the at least one opening.

Abstract: A semiconductor package including a semiconductor die, a molding compound and a redistribution structure is provided. The molding compound laterally wraps around the semiconductor die, wherein the molding compound includes a base material and a first filler particle and a second filler particle embedded in the base material. The first filler particle has a first recess located in a top surface of the first filler particle, and the second filler particle has at least one hollow void therein. The redistribution structure is disposed on the semiconductor die and the molding compound, wherein the redistribution structure has a polymer dielectric layer. The polymer dielectric layer includes a body portion and a first protruding portion protruding from the body portion, wherein the body portion is in contact with the base material and the top surface of the first filler particle, and the first protruding portion fits with the first recess of the first filler particle.

Abstract: In an embodiment, a device includes: an integrated circuit die; an encapsulant at least partially surrounding the integrated circuit die, the encapsulant including fillers having an average diameter; a through via extending through the encapsulant, the through via having a lower portion of a constant width and an upper portion of a continuously decreasing width, a thickness of the upper portion being greater than the average diameter of the fillers; and a redistribution structure including: a dielectric layer on the through via, the encapsulant, and the integrated circuit die; and a metallization pattern having a via portion extending through the dielectric layer and a line portion extending along the dielectric layer, the metallization pattern being electrically coupled to the through via and the integrated circuit die.

Abstract: An apparatus and method for engaging a mounting panel of a computer device includes a bracket, as well as a lever and slider mechanism connected to the bracket. The lever and slider mechanism includes a base, a wedge slider, a lever, a geared bar, and a biasing element. The base is connected to the bracket. The wedge slider is connected to the bracket and disposed immediately below the base. Rotating the lever from a first position to a second position causes a gear to engage the geared bar, causing the geared bar to move vertically. The rotating allows movement along the contact between an angled end of the geared bar and a wedged end protrusion of the wedge slider such that the biasing element pushes the wedge slider away from the bracket and allows the wedge slider to engage an opening in a mounting panel.