Patents by Inventor Chih-Wei Lin
Chih-Wei Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220139894Abstract: A semiconductor package includes a photonic integrated circuit, an electronic integrated circuit and a waveguide. The photonic integrated circuit includes an optical coupler. The electronic integrated circuit is disposed aside the photonic integrated circuit. The waveguide is optically coupled to the optical coupler, wherein the waveguide is disposed at an edge of the photonic integrated circuit and protrudes from the edge of the photonic integrated circuit.Type: ApplicationFiled: January 18, 2022Publication date: May 5, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sheng-Chieh Yang, Ching-Hua Hsieh, Chih-Wei Lin, Yu-Hao Chen
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Patent number: 11322421Abstract: Provided is a package structure including a composite wafer, a plurality of dies, an underfill, and a plurality of dam structures. The composite wafer has a first surface and a second surface opposite to each other. The composite wafer includes a plurality of seal rings dividing the composite wafer into a plurality of packages; and a plurality of through holes respectively disposed between the seal rings and penetrating through the first and second surfaces. The dies are respectively bonded onto the packages at the first surface by a plurality of connectors. The underfill laterally encapsulates the connectors. The dam structures are disposed on the first surface of the composite wafer to separate the underfill from the through holes.Type: GrantFiled: July 9, 2020Date of Patent: May 3, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Mao-Yen Chang, Chih-Wei Lin, Hao-Yi Tsai, Kuo-Lung Pan, Chun-Cheng Lin, Tin-Hao Kuo, Yu-Chia Lai, Chih-Hsuan Tai
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Publication number: 20220130794Abstract: A method includes placing a first package component and a second package component over a carrier. The first conductive pillars of the first package component and second conductive pillars of the second package component face the carrier. The method further includes encapsulating the first package component and the second package component in an encapsulating material, de-bonding the first package component and the second package component from the carrier, planarizing the first conductive pillars, the second conductive pillars, and the encapsulating material, and forming redistribution lines to electrically couple to the first conductive pillars and the second conductive pillars.Type: ApplicationFiled: January 3, 2022Publication date: April 28, 2022Inventors: Ying-Jui Huang, Chien Ling Hwang, Chih-Wei Lin, Ching-Hua Hsieh, Chung-Shi Liu, Chen-Hua Yu
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Patent number: 11309226Abstract: Three-dimensional integrated circuit (3DIC) structures and methods of forming the same are provided. A 3DIC structure includes a semiconductor package, a first package substrate, a molded underfill layer and a thermal interface material. The semiconductor package is disposed over and electrically connected to the first package substrate through a plurality of first bumps. The semiconductor package includes at least one semiconductor die and an encapsulation layer aside the semiconductor die. The molded underfill layer surrounds the plurality of first bumps and a sidewall of the semiconductor package, and has a substantially planar top surface. The CTE of the molded underfill layer is different from the CTE of the encapsulation layer of the semiconductor package. The thermal interface material is disposed over the semiconductor package.Type: GrantFiled: December 18, 2019Date of Patent: April 19, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chia-Min Lin, Ching-Hua Hsieh, Chih-Wei Lin, Sheng-Hsiang Chiu, Sheng-Feng Weng, Yao-Tong Lai
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Publication number: 20220076982Abstract: A semiconductor package includes a semiconductor device, an encapsulating material encapsulating the semiconductor device, and a redistribution structure disposed over the encapsulating material and the semiconductor device. The semiconductor device includes an active surface having conductive bumps and a dielectric film encapsulating the conductive bumps, where a material of the dielectric film comprises an epoxy resin and a filler. The conductive bumps are isolated from the encapsulating material by the dielectric film, and the redistribution structure is electrically connected to the conductive bumps. A manufacturing method of a semiconductor package is also provided.Type: ApplicationFiled: November 15, 2021Publication date: March 10, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sheng-Chieh Yang, Shing-Chao Chen, Ching-Hua Hsieh, Chih-Wei Lin
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Publication number: 20220077102Abstract: A semiconductor structure includes a semiconductor wafer, a first surface mount component, a second surface mount component and a first barrier structure. The first surface mount component is disposed on the semiconductor wafer, and electrically connected to the semiconductor wafer through a plurality of first electrical connectors. The second surface mount component is disposed on the semiconductor wafer, and electrically connected to the semiconductor wafer through a plurality of second electrical connectors, wherein an edge of the second surface mount component is overhanging a periphery of the semiconductor wafer. The first barrier structure is disposed on the semiconductor wafer in between the second electrical connectors and the edge of the second surface mount component, wherein a first surface of the first barrier structure is facing the second electrical connectors, and a second surface of the first barrier structure is facing away from the second electrical connectors.Type: ApplicationFiled: September 10, 2020Publication date: March 10, 2022Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Mao-Yen Chang, Chih-Wei Lin, Hao-Yi Tsai, Kuo-Lung Pan, Chun-Cheng Lin, Tin-Hao Kuo, Yu-Chia Lai, Chih-Hsuan Tai
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Publication number: 20220067334Abstract: A fingerprint sensor package and method are provided. Embodiments include a sensor and a sensor surface material encapsulated within the fingerprint sensor package. An array of electrodes of the sensor are electrically connected using through vias that are located either in the sensor, in connection blocks separated from the sensor, or through connection blocks, or else connected through other connections such as wire bonds. A high voltage die is attached in order to increase the sensitivity of the fingerprint sensor.Type: ApplicationFiled: November 9, 2021Publication date: March 3, 2022Inventors: Yu-Chih Huang, Chih-Hua Chen, Yu-Jen Cheng, Chih-Wei Lin, Yu-Feng Chen, Hao-Yi Tsai, Chung-Shi Liu, Chen-Hua Yu
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Patent number: 11251141Abstract: A package structure includes a semiconductor device, a molding compound, a first dielectric layer, and a through-via. The molding compound is in contact with a sidewall of the semiconductor device. The first dielectric layer is over the molding compound and the semiconductor device. The through-via is in the molding compound and the first dielectric layer. The through-via is a continuous element and in contact with the first dielectric layer.Type: GrantFiled: May 31, 2020Date of Patent: February 15, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Hsuan Tai, Ting-Ting Kuo, Yu-Chih Huang, Chih-Wei Lin, Hsiu-Jen Lin, Chih-Hua Chen, Ming-Da Cheng, Ching-Hua Hsieh, Hao-Yi Tsai, Chung-Shi Liu
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Patent number: 11239103Abstract: A method comprises forming a plurality of interconnect structures including a dielectric layer, a metal line and a redistribution line over a carrier, attaching a semiconductor die on a first side of the plurality of interconnect structures, forming an underfill layer between the semiconductor die and the plurality of interconnect structures, mounting a top package on the first side the plurality of interconnect structures, wherein the top package comprises a plurality of conductive bumps, forming an encapsulation layer over the first side of the plurality of interconnect structures, wherein the top package is embedded in the encapsulation layer, detaching the carrier from the plurality of interconnect structures and mounting a plurality of bumps on a second side of the plurality of interconnect structures.Type: GrantFiled: April 13, 2020Date of Patent: February 1, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chih-Wei Lin, Hui-Min Huang, Ai-Tee Ang, Yu-Peng Tsai, Ming-Da Cheng, Chung-Shi Liu
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Patent number: 11239082Abstract: A method for fabricating semiconductor device includes the steps of first forming a gate dielectric layer on a substrate; forming a gate material layer on the gate dielectric layer, and removing part of the gate material layer and part of the gate dielectric layer to form a gate electrode, in which a top surface of the gate dielectric layer adjacent to two sides of the gate electrode is lower than a top surface of the gate dielectric layer between the gate electrode and the substrate. Next, a first mask layer is formed on the gate dielectric layer and the gate electrode, part of the first mask layer and part of the gate dielectric layer are removed to form a first spacer, a second mask layer is formed on the substrate and the gate electrode, and part of the second mask layer is removed to forma second spacer.Type: GrantFiled: June 11, 2019Date of Patent: February 1, 2022Assignee: UNITED MICROELECTRONICS CORP.Inventors: I-Fan Chang, Yen-Liang Wu, Wen-Tsung Chang, Jui-Ming Yang, Jie-Ning Yang, Chi-Ju Lee, Chun-Ting Chiang, Bo-Yu Su, Chih-Wei Lin, Dien-Yang Lu
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Patent number: 11233039Abstract: Semiconductor packages are provided. The semiconductor package includes a first redistribution layer structure, a photonic integrated circuit, an electronic integrated circuit, a waveguide and a memory. The photonic integrated circuit is disposed over and electrically connected to the first redistribution layer structure, and includes an optical transceiver and an optical coupler. The electronic integrated circuit is disposed over and electrically connected to the first redistribution layer structure. The waveguide is optically coupled to the optical coupler. The memory is electrically connected to the electronic integrated circuit.Type: GrantFiled: May 5, 2020Date of Patent: January 25, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sheng-Chieh Yang, Ching-Hua Hsieh, Chih-Wei Lin, Yu-Hao Chen
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Publication number: 20220013422Abstract: Provided is a package structure including a composite wafer, a plurality of dies, an underfill, and a plurality of dam structures. The composite wafer has a first surface and a second surface opposite to each other. The composite wafer includes a plurality of seal rings dividing the composite wafer into a plurality of packages; and a plurality of through holes respectively disposed between the seal rings and penetrating through the first and second surfaces. The dies are respectively bonded onto the packages at the first surface by a plurality of connectors. The underfill laterally encapsulates the connectors. The dam structures are disposed on the first surface of the composite wafer to separate the underfill from the through holes.Type: ApplicationFiled: July 9, 2020Publication date: January 13, 2022Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Mao-Yen Chang, Chih-Wei Lin, Hao-Yi Tsai, Kuo-Lung Pan, Chun-Cheng Lin, Tin-Hao Kuo, Yu-Chia Lai, Chih-Hsuan Tai
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Patent number: 11217555Abstract: A method includes placing a first package component and a second package component over a carrier. The first conductive pillars of the first package component and second conductive pillars of the second package component face the carrier. The method further includes encapsulating the first package component and the second package component in an encapsulating material, de-bonding the first package component and the second package component from the carrier, planarizing the first conductive pillars, the second conductive pillars, and the encapsulating material, and forming redistribution lines to electrically couple to the first conductive pillars and the second conductive pillars.Type: GrantFiled: April 30, 2018Date of Patent: January 4, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Ying-Jui Huang, Chien Ling Hwang, Chih-Wei Lin, Ching-Hua Hsieh, Chung-Shi Liu, Chen-Hua Yu
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Patent number: 11217708Abstract: An optical sensor includes a substrate, a first/second/third well disposed in a sensing region, a deep trench isolation structure, and a passivation layer. The substrate has a first conductivity type and includes the sensing region. The first well has a second conductivity type and a first depth. The second well has the second conductivity type and a second depth. The third well has the first conductivity type and a third depth. The deep trench isolation structure is disposed in the substrate and surrounding the sensing region, wherein the depth of the deep trench isolation structure is greater than the first depth, the first depth is greater than the second depth, and the second depth is greater than the third depth. The passivation layer is disposed over the substrate, wherein the passivation layer includes a plurality of protruding portions disposed directly above the sensing region.Type: GrantFiled: June 2, 2020Date of Patent: January 4, 2022Assignee: Vanguard International Semiconductor CorporationInventors: Shih-Hao Liu, Chung-Ren Lao, Chih-Cherng Liao, Wu-Hsi Lu, Ming-Cheng Lo, Wei-Lun Chung, Chih-Wei Lin
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Patent number: 11211780Abstract: A pass-through device seals an opening of a barrier while permitting one or more cables to pass through the opening. The pass-through device includes a two-part seal that moves between an open position that permits insertion of a cable, and a closed position that establishes an airtight seal around the cable. The two-part seal can include a stationary seal segment and a moving seal segment. The moving seal segment can be moved away from the stationary seal segment by unlatching and opening a door on the pass-through device. A cable can be placed between the seal segments, and the door can be closed until it latches, thus sealing the cable between the seal segments. The seal segments can include inclines to urge the cable towards cable openings of the seal segments. In some cases, the two-part seal can include openings for multiple cables.Type: GrantFiled: September 14, 2020Date of Patent: December 28, 2021Assignee: QUANTA COMPUTER INC.Inventors: Chun Chang, Hsin-Chieh Lin, Yao-Long Lin, Chih-Wei Lin
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Publication number: 20210384294Abstract: Structures and formation methods of a semiconductor device structure are provided. The semiconductor device structure includes a semiconductor substrate and a gate stack over the semiconductor substrate. The gate stack includes a gate dielectric layer and a work function layer. The gate dielectric layer is between the semiconductor substrate and the work function layer. The semiconductor device structure also includes a halogen source layer. The gate dielectric layer is between the semiconductor substrate and the halogen source layer.Type: ApplicationFiled: August 23, 2021Publication date: December 9, 2021Inventors: Chih-Wei Lin, Chih-Lin Wang, Kang-Min Kuo
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Patent number: 11194990Abstract: A fingerprint sensor package and method are provided. Embodiments include a sensor and a sensor surface material encapsulated within the fingerprint sensor package. An array of electrodes of the sensor are electrically connected using through vias that are located either in the sensor, in connection blocks separated from the sensor, or through connection blocks, or else connected through other connections such as wire bonds. A high voltage die is attached in order to increase the sensitivity of the fingerprint sensor.Type: GrantFiled: April 22, 2019Date of Patent: December 7, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yu-Chih Huang, Chih-Hua Chen, Yu-Jen Cheng, Chih-Wei Lin, Yu-Feng Chen, Hao-Yi Tsai, Chung-Shi Liu, Chen-Hua Yu
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Publication number: 20210376171Abstract: An optical sensor includes a substrate, a first/second/third well disposed in a sensing region, a deep trench isolation structure, and a passivation layer. The substrate has a first conductivity type and includes the sensing region. The first well has a second conductivity type and a first depth. The second well has the second conductivity type and a second depth. The third well has the first conductivity type and a third depth. The deep trench isolation structure is disposed in the substrate and surrounding the sensing region, wherein the depth of the deep trench isolation structure is greater than the first depth, the first depth is greater than the second depth, and the second depth is greater than the third depth. The passivation layer is disposed over the substrate, wherein the passivation layer includes a plurality of protruding portions disposed directly above the sensing region.Type: ApplicationFiled: June 2, 2020Publication date: December 2, 2021Applicant: Vanguard International Semiconductor CorporationInventors: Shih-Hao LIU, Chung-Ren LAO, Chih-Cherng LIAO, Wu-Hsi LU, Ming-Cheng LO, Wei-Lun CHUNG, Chih-Wei LIN
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Publication number: 20210366885Abstract: A package includes a first die, a second die, a bridge structure, a first redistribution structure, and an encapsulant. The first die and the second die are disposed side by side. The bridge structure is disposed over the first die and the second die. The bridge structure includes a plurality of routing patterns and a plurality of connectors disposed on the plurality of routing patterns. The first redistribution structure is sandwiched between the first die and the bridge structure and is sandwiched between the second die and the bridge structure. The plurality of connectors of the bridge structure is in physical contact with the first redistribution structure. The encapsulant encapsulates the bridge structure. The plurality of routing patterns and the plurality of connectors of the bridge structure are completely spaced apart from the encapsulant.Type: ApplicationFiled: August 9, 2021Publication date: November 25, 2021Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Shing-Chao Chen, Ching-Hua Hsieh, Chih-Wei Lin, Sheng-Chieh Yang
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Patent number: 11177237Abstract: A manufacturing method for semiconductor packages is provided. Chips are provided on a carrier. Through interlayer vias are formed over the carrier to surround the chips. A molding compound is formed over the carrier to partially and laterally encapsulate the chip and the through interlayer vias. The molding compound comprises pits on a top surface thereof. A polymeric molding compound is formed on the molding compound to fill the pits of the molding compound.Type: GrantFiled: December 16, 2019Date of Patent: November 16, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Meng-Tse Chen, Ching-Hua Hsieh, Chung-Shi Liu, Chih-Wei Lin