Patents by Inventor Chih-Wei Tsai
Chih-Wei Tsai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240096756Abstract: A method of making a semiconductor device includes manufacturing a first transistor over a first side of a substrate. The method further includes depositing a spacer material against a sidewall of the first transistor. The method further includes recessing the spacer material to expose a first portion of the sidewall of the first transistor. The method further includes manufacturing a first electrical connection to the transistor, a first portion of the electrical connection contacts a surface of the first transistor farthest from the substrate, and a second portion of the electrical connect contacts the first portion of the sidewall of the first transistor. The method further includes manufacturing a self-aligned interconnect structure (SIS) extending along the spacer material, wherein the spacer material separates a portion of the SIS from the first transistor, and the first electrical connection directly contacts the SIS.Type: ApplicationFiled: November 22, 2023Publication date: March 21, 2024Inventors: Chih-Yu LAI, Chih-Liang CHEN, Chi-Yu LU, Shang-Syuan CIOU, Hui-Zhong ZHUANG, Ching-Wei TSAI, Shang-Wen CHANG
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Publication number: 20240096701Abstract: A device includes: a stack of semiconductor nanostructures; a gate structure wrapping around the semiconductor nanostructures, the gate structure extending in a first direction; a source/drain region abutting the gate structure and the stack in a second direction transverse the first direction; a contact structure on the source/drain region; a backside conductive trace under the stack, the backside conductive trace extending in the second direction; a first through via that extends vertically from the contact structure to a top surface of the backside dielectric layer; and a gate isolation structure that abuts the first through via in the second direction.Type: ApplicationFiled: May 17, 2023Publication date: March 21, 2024Inventors: Chun-Yuan CHEN, Huan-Chieh SU, Ching-Wei TSAI, Shang-Wen CHANG, Yi-Hsun CHIU, Chih-Hao WANG
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Publication number: 20240096781Abstract: A package structure including a semiconductor die, a redistribution circuit structure and an electronic device is provided. The semiconductor die is laterally encapsulated by an insulating encapsulation. The redistribution circuit structure is disposed on the semiconductor die and the insulating encapsulation. The redistribution circuit structure includes a colored dielectric layer, inter-dielectric layers and redistribution conductive layers embedded in the inter-dielectric layers. The electronic device is disposed over the colored dielectric layer and electrically connected to the redistribution circuit structure.Type: ApplicationFiled: March 20, 2023Publication date: March 21, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Ti Lu, Hao-Yi Tsai, Chia-Hung Liu, Yu-Hsiang Hu, Hsiu-Jen Lin, Tzuan-Horng Liu, Chih-Hao Chang, Bo-Jiun Lin, Shih-Wei Chen, Hung-Chun Cho, Pei-Rong Ni, Hsin-Wei Huang, Zheng-Gang Tsai, Tai-You Liu, Po-Chang Shih, Yu-Ting Huang
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Patent number: 11934027Abstract: An optical system affixed to an electronic apparatus is provided, including a first optical module, a second optical module, and a third optical module. The first optical module is configured to adjust the moving direction of a first light from a first moving direction to a second moving direction, wherein the first moving direction is not parallel to the second moving direction. The second optical module is configured to receive the first light moving in the second moving direction. The first light reaches the third optical module via the first optical module and the second optical module in sequence. The third optical module includes a first photoelectric converter configured to transform the first light into a first image signal.Type: GrantFiled: June 21, 2022Date of Patent: March 19, 2024Assignee: TDK TAIWAN CORP.Inventors: Chao-Chang Hu, Chih-Wei Weng, Chia-Che Wu, Chien-Yu Kao, Hsiao-Hsin Hu, He-Ling Chang, Chao-Hsi Wang, Chen-Hsien Fan, Che-Wei Chang, Mao-Gen Jian, Sung-Mao Tsai, Wei-Jhe Shen, Yung-Ping Yang, Sin-Hong Lin, Tzu-Yu Chang, Sin-Jhong Song, Shang-Yu Hsu, Meng-Ting Lin, Shih-Wei Hung, Yu-Huai Liao, Mao-Kuo Hsu, Hsueh-Ju Lu, Ching-Chieh Huang, Chih-Wen Chiang, Yu-Chiao Lo, Ying-Jen Wang, Shu-Shan Chen, Che-Hsiang Chiu
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Patent number: 11935804Abstract: In an embodiment, a device includes: an integrated circuit die; an encapsulant at least partially surrounding the integrated circuit die, the encapsulant including fillers having an average diameter; a through via extending through the encapsulant, the through via having a lower portion of a constant width and an upper portion of a continuously decreasing width, a thickness of the upper portion being greater than the average diameter of the fillers; and a redistribution structure including: a dielectric layer on the through via, the encapsulant, and the integrated circuit die; and a metallization pattern having a via portion extending through the dielectric layer and a line portion extending along the dielectric layer, the metallization pattern being electrically coupled to the through via and the integrated circuit die.Type: GrantFiled: April 10, 2023Date of Patent: March 19, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tzu-Sung Huang, Ming Hung Tseng, Yen-Liang Lin, Hao-Yi Tsai, Chi-Ming Tsai, Chung-Shi Liu, Chih-Wei Lin, Ming-Che Ho
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Publication number: 20240084455Abstract: Some implementations described herein include systems and techniques for fabricating a wafer-on-wafer product using a filled lateral gap between beveled regions of wafers included in a stacked-wafer assembly and along a perimeter region of the stacked-wafer assembly. The systems and techniques include a deposition tool having an electrode with a protrusion that enhances an electromagnetic field along the perimeter region of the stacked-wafer assembly during a deposition operation performed by the deposition tool. Relative to an electromagnetic field generated by a deposition tool not including the electrode with the protrusion, the enhanced electromagnetic field improves the deposition operation so that a supporting fill material may be sufficiently deposited.Type: ApplicationFiled: February 8, 2023Publication date: March 14, 2024Inventors: Che Wei YANG, Chih Cheng SHIH, Kuo Liang LU, Yu JIANG, Sheng-Chan LI, Kuo-Ming WU, Sheng-Chau CHEN, Chung-Yi YU, Cheng-Yuan TSAI
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Patent number: 11930174Abstract: A method and apparatus for block partition are disclosed. If a cross-colour component prediction mode is allowed, the luma block and the chroma block are partitioned into one or more luma leaf blocks and chroma leaf blocks. If a cross-colour component prediction mode is allowed, whether to enable an LM (Linear Model) mode for a target chroma leaf block is determined based on a first split type applied to an ancestor chroma node of the target chroma leaf block and a second split type applied to a corresponding ancestor luma node. According to another method, after the luma block and the chroma block are partitioned using different partition tress, determine whether one or more exception conditions to allow an LM for a target chroma leaf block are satisfied when the chroma partition tree uses a different split type, a different partition direction, or both from the luma partition tree.Type: GrantFiled: December 30, 2019Date of Patent: March 12, 2024Assignee: HFI INNOVATION INC.Inventors: Chia-Ming Tsai, Tzu-Der Chuang, Chih-Wei Hsu, Ching-Yeh Chen, Zhi-Yi Lin
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Patent number: 11929314Abstract: In some implementations, one or more semiconductor processing tools may form a metal cap on a metal gate. The one or more semiconductor processing tools may form one or more dielectric layers on the metal cap. The one or more semiconductor processing tools may form a recess to the metal cap within the one or more dielectric layers. The one or more semiconductor processing tools may perform a bottom-up deposition of metal material on the metal cap to form a metal plug within the recess and directly on the metal cap.Type: GrantFiled: March 12, 2021Date of Patent: March 12, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Hsien Huang, Peng-Fu Hsu, Yu-Syuan Cai, Min-Hsiu Hung, Chen-Yuan Kao, Ken-Yu Chang, Chun-I Tsai, Chia-Han Lai, Chih-Wei Chang, Ming-Hsing Tsai
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Publication number: 20240079051Abstract: Disclosed is a memory cell including a first transistor having a first terminal coupled to a bit line; a second transistor having a first terminal coupled to a bit line bar; a weight storage circuit coupled between a gate terminal of the first transistor and a gate terminal of the second transistor, storing a weight value, and determining to turn on the first transistor or the second transistor according to the weight value; and a driving circuit coupled to a second terminal of the first transistor, a second terminal of the second transistor, and at least one word line, receiving at least one threshold voltage and at least one input data from the word line, and determining whether to generate an operation current on a path of the turned-on first transistor or the turned-on second transistor according to the threshold voltage and the input data.Type: ApplicationFiled: November 8, 2022Publication date: March 7, 2024Applicant: Industrial Technology Research InstituteInventors: Chih-Sheng Lin, Tuo-Hung Hou, Fu-Cheng Tsai, Jian-Wei Su, Kuo-Hua Tseng
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Patent number: 11921307Abstract: The present disclosure provides an optical element driving mechanism, which includes a movable part, a fixed assembly, and a driving assembly. The movable part is configured to be connected to an optical element. The movable part is movable relative to the fixed assembly. The driving assembly is configured to drive the movable part to move relative to the fixed assembly. The movable part includes a connecting assembly configured to position the optical element.Type: GrantFiled: January 7, 2022Date of Patent: March 5, 2024Assignee: TDK TAIWAN CORP.Inventors: Chao-Hsi Wang, Chao-Chang Hu, Chih-Wei Weng, Kuen-Wang Tsai, Tzu-Ying Chen
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Patent number: 11924444Abstract: Method and apparatus for constrained de-blocking filter are disclosed. One method receives input data related to a current block in a current picture at a video encoder side or a video bitstream corresponding to compressed data including the current block in the current picture at a video decoder side, and determines a first boundary associated with the current block, wherein the first boundary corresponds to one vertical boundary or one horizontal boundary of the current block. The method then applies de-blocking process to a reconstructed current block corresponding to the current block to result in a filtered-reconstructed current block, using a plurality of first reference samples at a same side of the first boundary, and replaces a first set of the first reference samples by one or more padding values. The method then generates a filtered decoded picture including the filtered-reconstructed current block.Type: GrantFiled: April 11, 2022Date of Patent: March 5, 2024Assignee: HFI INNOVATION INC.Inventors: Chia-Ming Tsai, Chih-Wei Hsu, Ching-Yeh Chen, Tzu-Der Chuang, Yu-Wen Huang
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Publication number: 20240071953Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above- mentioned memory device is also provided.Type: ApplicationFiled: November 6, 2023Publication date: February 29, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Ming Chiang, Chao-wei Li, Wei-Lun Tsai, Chia-Min Lin, Yi-Da Tsai, Sheng-Feng Weng, Yu-Hao Chen, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh
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Publication number: 20240071954Abstract: A memory device including a base semiconductor die, conductive terminals, memory dies, an insulating encapsulation and a buffer cap is provided. The conductive terminals are disposed on a first surface of the base semiconductor die. The memory dies are stacked over a second surface of the base semiconductor die, and the second surface of the base semiconductor die is opposite to the first surface of the base semiconductor die. The insulating encapsulation is disposed on the second surface of the base semiconductor die and laterally encapsulates the memory dies. The buffer cap covers the first surface of the base semiconductor die, sidewalls of the base semiconductor die and sidewalls of the insulating encapsulation. A package structure including the above-mentioned memory device is also provided.Type: ApplicationFiled: November 9, 2023Publication date: February 29, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Kai-Ming Chiang, Chao-wei Li, Wei-Lun Tsai, Chia-Min Lin, Yi-Da Tsai, Sheng-Feng Weng, Yu-Hao Chen, Sheng-Hsiang Chiu, Chih-Wei Lin, Ching-Hua Hsieh
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Publication number: 20240069299Abstract: An optical element driving mechanism includes a movable assembly, a fixed assembly, and a driving assembly. The movable assembly is configured to be connected to an optical element. The movable assembly is movable relative to the fixed assembly. The driving assembly is configured to drive the movable assembly to move relative to the fixed assembly in a range of motion. The optical element driving mechanism further includes a positioning assembly configured to position the movable assembly at a predetermined position relative to the fixed assembly when the driving assembly is not operating.Type: ApplicationFiled: November 9, 2023Publication date: February 29, 2024Inventors: Chao-Chang HU, Kuen-Wang TSAI, Liang-Ting HO, Chao-Hsi WANG, Chih-Wei WENG, He-Ling CHANG, Che-Wei CHANG, Sheng-Zong CHEN, Ko-Lun CHAO, Min-Hsiu TSAI, Shu-Shan CHEN, Jungsuck RYOO, Mao-Kuo HSU, Guan-Yu SU
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Publication number: 20240071981Abstract: A method of fabricating a semiconductor structure includes the following steps. A semiconductor wafer is provided. A plurality of first surface mount components and a plurality of second surface mount components are bonded onto the semiconductor wafer, wherein a first portion of each of the second surface mount components is overhanging a periphery of the semiconductor wafer. A first barrier structure is formed in between the second surface mount components and the semiconductor wafer. An underfill structure is formed under a second portion of each of the second surface mount components, wherein the first barrier structure blocks the spreading of the underfill structure from the second portion to the first portion.Type: ApplicationFiled: November 1, 2023Publication date: February 29, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Mao-Yen Chang, Chih-Wei Lin, Hao-Yi Tsai, Kuo-Lung Pan, Chun-Cheng Lin, Tin-Hao Kuo, Yu-Chia Lai, Chih-Hsuan Tai
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Patent number: 11915976Abstract: An ammonium fluoride gas may be used to form a protection layer for one or more interlayer dielectric layers, one or more insulating caps, and/or one or more source/drain regions of a semiconductor device during a pre-clean etch process. The protection layer can be formed through an oversupply of nitrogen trifluoride during the pre-clean etch process. The oversupply of nitrogen trifluoride causes an increased formation of ammonium fluoride, which coats the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) with a thick protection layer. The protection layer protects the interlayer dielectric layer(s), the insulating cap(s), and/or the source/drain region(s) during the pre-clean process from being etched by fluorine ions formed during the pre-clean process.Type: GrantFiled: June 27, 2022Date of Patent: February 27, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Li-Wei Chu, Ying-Chi Su, Yu-Kai Chen, Wei-Yip Loh, Hung-Hsu Chen, Chih-Wei Chang, Ming-Hsing Tsai
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Patent number: 11916128Abstract: The present disclosure provides a method of forming a semiconductor device including an nFET structure and a pFET structure where each of the nFET and pFET structures include a semiconductor substrate and a gate trench. The method includes depositing an interfacial layer in each gate trench, depositing a first ferroelectric layer over the interfacial layer, removing the first ferroelectric layer from the nFET structure, depositing a metal oxide layer in each gate trench, depositing a second ferroelectric layer over the metal oxide layer, removing the second ferroelectric layer from the pFET structure, and depositing a gate electrode in each gate trench.Type: GrantFiled: February 27, 2023Date of Patent: February 27, 2024Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTDInventors: Min Cao, Pei-Yu Wang, Sai-Hooi Yeong, Ching-Wei Tsai, Kuan-Lun Cheng, Chih-Hao Wang
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Publication number: 20230352974Abstract: An electronic device including a power supply device and a load is provided. The power supply device includes an energy harvest circuit, a power management circuit, and an energy storage element. The energy harvest circuit receives a wireless signal and harvests energy from the wireless signal to generate a first output voltage. The power management circuit processes the first output voltage to generate a second output voltage. The energy storage element is charged by the second output voltage to provide an operation voltage. The load operates according to the operation voltage.Type: ApplicationFiled: December 30, 2022Publication date: November 2, 2023Inventors: Cheng-Chih WANG, Chih-Wei TSAI, Tzu-Lan SHEN, Yan-Chin HUANG
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Publication number: 20230252151Abstract: An anti-virus chip includes a first connection terminal, a second connection terminal, a detection unit and a processing unit. The first connection terminal and the second connection terminal are respectively coupled to a connection port and a system circuit of an electronic device. The detection unit detects whether the connection port is connected to an external device via the first connection terminal. When the detection unit detects that the connection port is connected to the external device, the processing unit performs a virus-scan program on the external device to determine whether a virus exists in the external device. When determining that a virus does not exist in the external device, the processing unit establishes a first transmission path between the first connection terminal and the second connection terminal. When determining that a virus exists in the external device, the processing unit does not establish the first transmission path.Type: ApplicationFiled: April 18, 2023Publication date: August 10, 2023Inventors: Ming-Che HUNG, Chia-Ching LU, Shih-Hsuan YEN, Chih-Wei TSAI
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Patent number: 11663335Abstract: An anti-virus chip includes a first connection terminal, a second connection terminal, a detection unit and a processing unit. The first connection terminal and the second connection terminal are respectively coupled to a connection port and a system circuit of an electronic device. The detection unit detects whether the connection port is connected to an external device via the first connection terminal. When the detection unit detects that the connection port is connected to the external device, the processing unit performs a virus-scan program on the external device to determine whether a virus exists in the external device. When determining that a virus does not exist in the external device, the processing unit establishes a first transmission path between the first connection terminal and the second connection terminal. When determining that a virus exists in the external device, the processing unit does not establish the first transmission path.Type: GrantFiled: March 3, 2021Date of Patent: May 30, 2023Assignee: NUVOTON TECHNOLOGY CORPORATIONInventors: Ming-Che Hung, Chia-Ching Lu, Shih-Hsuan Yen, Chih-Wei Tsai