Abstract: Various embodiments of the present application are directed towards a method for forming a flat via top surface for memory, as well as an integrated circuit (IC) resulting from the method. In some embodiments, an etch is performed into a dielectric layer to form an opening. A liner layer is formed covering the dielectric layer and lining the opening. A lower body layer is formed covering the dielectric layer and filling a remainder of the opening over the liner layer. A top surface of the lower body layer and a top surface of the liner layer are recessed to below a top surface of the dielectric layer to partially clear the opening. A homogeneous upper body layer is formed covering the dielectric layer and partially filling the opening. A planarization is performed into the homogeneous upper body layer until the dielectric layer is reached.

Abstract: Some embodiments relate to a device. The device includes a top electrode and a via disposed over the top electrode. A peripheral upper surface of the top electrode is above a central upper surface of the top electrode, and a tapered inner sidewall of the top electrode connects the peripheral upper surface to the central upper surface. The via establishes electrical contact with the tapered inner sidewall but is spaced apart from the central upper surface.

Abstract: In some embodiments, the present disclosure relates to a memory circuit having a first resistive random access memory (RRAM) element and a second RRAM element arranged within a dielectric structure over a substrate. The first RRAM element has a first conjunct electrode separated from a first disjunct electrode by a first data storage layer. The second RRAM element has a second conjunct electrode separated from a second disjunct electrode by a second data storage layer. A control device is disposed within the substrate and has first terminal coupled to the first conjunct electrode and the second conjunct electrode and a second terminal coupled to a word-line.

Abstract: The present disclosure, in some embodiments, relates to a resistive random access memory (RRAM) cell. The RRAM cell has a bottom electrode over a substrate. A data storage layer is over the bottom electrode and has a first thickness. A capping layer is over the data storage layer. The capping layer has a second thickness that is in a range of between approximately 1.9 and approximately 3 times thicker than the first thickness. A top electrode is over the capping layer.

Abstract: A resistive random access memory (RRAM) structure includes a resistive memory element formed on a semiconductor substrate. The resistive element includes a top electrode, a bottom electrode, and a resistive material layer positioned between the top electrode and the bottom electrode. The RRAM structure further includes a field effect transistor (FET) formed on the semiconductor substrate, the FET having a source and a drain. The drain of the FET has a higher doping concentration than the source of the FET. The resistive memory element is coupled with the drain via a portion of an interconnect structure.

Abstract: The present disclosure, in some embodiments, relates to a method of operating a resistive random access memory (RRAM) array. The method includes applying a word-line voltage to a selected word-line during a read operation. A non-zero voltage is applied to a selected bit-line during the read operation. A first voltage is applied to a selected source-line during the read operation. The first voltage is smaller than a second voltage applied to an unselected source-line during the read operation.

Abstract: A semiconductor structure includes a memory region. A memory structure is disposed on the memory region. The memory structure includes a first electrode, a resistance variable layer, protection spacers and a second electrode. The first electrode has a top surface and a first outer sidewall surface on the memory region. The resistance variable layer has a first portion and a second portion. The first portion is disposed over the top surface of the first electrode and the second portion extends upwardly from the first portion. The protection spacers are disposed over a portion of the top surface of the first electrode and surround the second portion of the resistance variable layer. The protection spacers are configurable to protect at least one conductive path in the resistance variable layer. The protection spacers have a second outer sidewall surface substantially aligned with the first outer sidewall surface of the first electrode.

Abstract: A semiconductor structure includes a memory region. A memory structure is disposed on the memory region. The memory structure includes a first electrode, a resistance variable layer, protection spacers and a second electrode. The first electrode has a top surface and a first outer sidewall surface on the memory region. The resistance variable layer has a first portion and a second portion. The first portion is disposed over the top surface of the first electrode and the second portion extends upwardly from the first portion. The protection spacers are disposed over a portion of the top surface of the first electrode and surround the second portion of the resistance variable layer. The protection spacers are configurable to protect at least one conductive path in the resistance variable layer. The protection spacers have a second outer sidewall surface substantially aligned with the first outer sidewall surface of the first electrode.

Abstract: The present disclosure, in some embodiments, relates to a resistive random access memory (RRAM) cell. The RRAM cell has a bottom electrode disposed over a lower interconnect layer and a data storage layer having a first thickness over the bottom electrode. A capping layer is disposed over the data storage layer. The capping layer has a second thickness that is in a range of between approximately 2 and approximately 3 times thicker than the first thickness. A top electrode is disposed over the capping layer and an upper interconnect layer is disposed over the top electrode.

Abstract: The present disclosure, in some embodiments, relates to an integrated chip. The integrated chip includes a lower interconnect layer disposed within a first inter-level dielectric (ILD) layer over a substrate. A plurality of MIM (metal-insulator-metal) structures are disposed within a second inter-level dielectric (ILD) layer over the lower interconnect layer. An upper interconnect layer is coupled to the plurality of MIM structures at first locations that are directly over second locations at which the lower interconnect layer is coupled to the plurality of MIM structures. One or both of the lower interconnect layer and the upper interconnect layer are comprised within a conductive path that electrically couples the plurality of MIM structures in a series connection.

Abstract: Some embodiments relate to a device. The device includes a top electrode and a via disposed over the top electrode. A peripheral upper surface of the top electrode is above a central upper surface of the top electrode, and a tapered inner sidewall of the top electrode connects the peripheral upper surface to the central upper surface. The via establishes electrical contact with the tapered inner sidewall but is spaced apart from the central upper surface.

Abstract: In some embodiments, the present disclosure relates to a resistive random access memory (RRAM) memory circuit. The memory circuit has a word-line decoder operably coupled to a first RRAM device and a second RRAM device by a word-line. A bit-line decoder is coupled to the first RRAM device by a first bit-line and to the second RRAM device by a second bit-line. A bias element is configured to apply a first non-zero bias voltage to the second bit-line concurrent to the bit-line decoder applying a non-zero voltage to the first bit-line.

Abstract: The present disclosure relates to an integrated circuit configured to mitigate damage to MIM decoupling capacitors. In some embodiments, the integrated chip has a lower interconnect layer vertically separated from a substrate by a first inter-level dielectric (ILD) layer. A conductive contact extends from a transistor device within the substrate to an uppermost surface of the first ILD layer. A plurality of MIM (metal-insulator-metal) structures are arranged over the lower interconnect layer. An upper interconnect layer is over the plurality of MIM structures. One or both of the lower interconnect layer and the upper interconnect layer are comprised within a conductive path that electrically couples the plurality of MIM structures in a series connection.

Abstract: Some embodiments relate to an integrated circuit device, which includes a bottom electrode, a dielectric layer, and top electrode. The dielectric layer is disposed over the bottom electrode. The top electrode is disposed over the dielectric layer, and an upper surface of the top electrode exhibits a recess. A via is disposed over the top electrode. The via makes electrical contact with only a tapered sidewall of the recess without contacting a bottom surface of the recess.

Abstract: The present disclosure, in some embodiments, relates to a memory device. The memory device includes a bottom electrode via and a bottom electrode over a top of the bottom electrode via. A data storage layer is over the bottom electrode and a top electrode is over the data storage layer. A top electrode via is on an upper surface of the top electrode and is centered along a first line that is laterally offset from a second line centered upon a bottommost surface of the bottom electrode via. The first line is perpendicular to the upper surface of the top electrode and parallel to the second line.

Abstract: A memory cell and method including a first electrode formed through a first opening in a first dielectric layer, a resistive layer formed on the first electrode, a spacing layer formed on the resistive layer, a second electrode formed on the resistive layer, and a second dielectric layer formed on the second electrode, the second dielectric layer including a second opening. The first dielectric layer formed on a substrate including a first metal layer. The first electrode and the resistive layer collectively include a first lip region that extends a first distance beyond the first opening. The second electrode and the second dielectric layer collectively include a second lip region that extends a second distance beyond the first opening. The spacing layer extends from the second distance to the first distance. The second electrode is coupled to a second metal layer using a via that extends through the second opening.

Abstract: In some embodiments, the present disclosure relates to a method of forming a memory circuit. The method may be performed by forming an interconnect wire within an inter-level dielectric (ILD) layer over a substrate. A conjunct electrode structure is formed over the interconnect wire, a data storage film is formed over the conjunct electrode structure, and a disjunct electrode structure is formed over the data storage film. The data storage film, the disjunct electrode structure, and the conjunct electrode structure are patterned to form a first data storage layer between the interconnect wire and a first disjunct electrode and to form a second data storage layer between the interconnect wire and a second disjunct electrode.

Abstract: In some embodiments, the present disclosure relates to a memory circuit having a first resistive random access memory (RRAM) element and a second RRAM element arranged within a dielectric structure over a substrate. The first RRAM element has a first conjunct electrode separated from a first disjunct electrode by a first data storage layer. The second RRAM element has a second conjunct electrode separated from a second disjunct electrode by a second data storage layer. A control device is disposed within the substrate and has first terminal coupled to the first conjunct electrode and the second conjunct electrode and a second terminal coupled to a word-line.

Abstract: Various embodiments of the present application are directed towards a method for forming a flat via top surface for memory, as well as an integrated circuit (IC) resulting from the method. In some embodiments, an etch is performed into a dielectric layer to form an opening. A liner layer is formed covering the dielectric layer and lining the opening. A lower body layer is formed covering the dielectric layer and filling a remainder of the opening over the liner layer. A top surface of the lower body layer and a top surface of the liner layer are recessed to below a top surface of the dielectric layer to partially clear the opening. A homogeneous upper body layer is formed covering the dielectric layer and partially filling the opening. A planarization is performed into the homogeneous upper body layer until the dielectric layer is reached.

Abstract: A resistive random access memory (RRAM) structure includes a resistive memory element formed on a semiconductor substrate. The resistive element includes a top electrode, a bottom electrode, and a resistive material layer positioned between the top electrode and the bottom electrode. The RRAM structure further includes a field effect transistor (FET) formed on the semiconductor substrate, the FET having a source and a drain. The drain of the FET has a higher doping concentration than the source of the FET. The resistive memory element is coupled with the drain via a portion of an interconnect structure.