Abstract: An orthodontic appliance for movably disposed inside dental patient's mouth. The dental patient's mouth has a maxillary dental arch, a mandibular dental arch, and defines a lingual side, a labial side, and a buccal side. The orthodontic appliance has a hard maxillary retainer corresponding to patient's upper jaw, a hard mandibular retainer corresponding to patient's lower jaw, and a soft retainer rigidly attached to the hard maxillary retainer and hard mandibular retainer. The hard maxillary retainer and hard mandibular retainer can be prefabricated according to expected Cusp-to-Fossa Relationship of dental patient, and then be manufactured in an injection mold. The orthodontic appliance can have function to treat teeth deviation, dislocation, malocclusion, or teeth unmatch.

Abstract: A memory device is provided in various embodiments. The memory device, in those embodiments, has an ovonic threshold switching (OTS) selector comprising multiple layers of OTS materials to achieve a low leakage current and as well as relatively low threshold voltage for the OTS selector. The multiple layers can have at least one layer of low bandgap OTS material and at least one layer of high bandgap OTS material.

Abstract: Various embodiments of the present disclosure are directed towards an integrated circuit (IC) including a first semiconductor device and second semiconductor device disposed on a semiconductor substrate. The first semiconductor device comprises a first gate structure, a first source region, and a first drain region. The first source and drain regions and are disposed in a first well region. The second semiconductor device comprises a second gate structure, a second source region, and a second drain region. The second source and drain regions are disposed in a second well region. The first and second well regions comprise a first doping type. The first well region is laterally offset from the second well region by a first distance. A third well region is disposed in the semiconductor substrate and laterally between the first and second well regions. The third well region comprises a second doping type opposite the first doping type.

Abstract: A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including: receiving a request to perform a read operation on a segment of the memory device; determining a program erase cycle count associated with the segment of the memory device; determining a temperature offset value for the segment of the memory device based on a write temperature and a read temperature, determining whether the temperature offset value satisfies a threshold criterion associated with the program erase cycle count of the segment; and responsive to determining that the temperature offset value satisfies the threshold criterion, performing a corrective read operation on the segment of the memory device, wherein a sense time parameter of the corrective read operation is modified according to the temperature offset value and the program erase cycle count.

Abstract: A method of forming a memory device according to the present disclosure includes forming a trench in a first substrate of a first wafer, depositing a data-storage element in the trench, performing a thermal treatment to the first wafer to improve a crystallization in the data-storage element, forming a first redistribution layer over the first substrate, forming a transistor in a second substrate of a second wafer, forming a second redistribution layer over the second substrate, and bonding the first wafer with the second wafer after the performing of the thermal treatment. The data-storage element is electrically coupled to the transistor through the first and second redistribution layers.

Abstract: The present disclosure relates to an integrated chip including a first dielectric layer overlying a substrate and a first conductive interconnect within the first dielectric layer. A bonding layer is over the first dielectric layer. The bonding layer includes a bonding dielectric layer and a bonding interconnect in the bonding dielectric layer. A first charged dielectric layer is along a bottom of the first dielectric layer. A second charged dielectric layer is along a top of the first dielectric layer. The first charged dielectric layer and the second charged dielectric layer have a same polarity.

Abstract: A modified electrode, manufacturing method thereof and use thereof are provided. The manufacturing method includes steps of: mixing a carbon nanomaterial with 2,2?-azino-bis(3-ethylbenzothiazoline-6-sulfonic acid), followed by drop-casting on a screen-printed carbon electrode, to obtain carbon material modified electrodes; and electrochemically pre-treating the carbon material modified electrodes by cyclic voltammetry technique, constant potential technique, or constant current technique to obtain a modified electrode. 3-Ethyl-6-sulfonate benzothiazolinone imine and 3-ethyl-6-sulfonate benzothiazolone compound are formed on a surface of the modified electrode, and the modified electrode is used for protein analysis, protein immobilization and related biosensor, electrochemical catalysis or biofuel cells.

Abstract: The invention provides a chip structure of a micro light-emitting diode display, comprising a package substrate, at least one light-emitting diode (LED) element, at least one metal oxide semiconductor field effect transistor (MOSFET), and a connection line. The LED element and the MOSFET are positioned on the package substrate, and each MOSFET comprises a source connected with the input voltage in common, a gate connected with a main control circuit, and a drain. An end of the LED element is connected with the drain of the MOSFET through the connection line, and the other end of the LED element is independently connected with a source drive circuit. Therefore, the MOSFET is provided on the package substrate and integrated in a chip structure, so as to achieve a better heat dissipation effect and requirements of high density and brightness.

Abstract: A portable electronic apparatus with multiple screens includes a first screen and a second screen movably coupled to the first screen along an arcuate path to be received in the first screen or moved out of the first screen. The first screen and the second screen face a same side of the portable electronic apparatus. The second screen includes a base, a lifting mechanism disposed on the base, and a display unit. The display unit is disposed on the lifting mechanism to be driven by the lifting mechanism to be lifted or lowered relative to the base. When the second screen is moved out of the first screen and a step is provided between a display surface of the display unit and a display surface of the first screen, the display unit is adapted to be lifted relative to the base through the lifting mechanism to compensate the step.

Abstract: A first die includes a first substrate and a first interconnect structure. A second die is bonded to the first die and includes a second substrate and a second interconnect structure, such that the first and second interconnect structures are arranged between the first and second substrates. A redistribution layer (RDL) stack is arranged on an outer side of the first die opposite the first interconnect structure. A heat path includes a through substrate via (TSV) extending from a conductive layer in the first interconnect structure, through the first substrate, and into the RDL stack. An RDL dielectric material is included in the RDL stack and separates the heat path from an ambient environment. A thermal conductivity of the RDL dielectric is over twenty times a thermal conductivity of an interconnect dielectric material of the first interconnect structure or of the second interconnect structure.

Abstract: A semiconductor device structure and a formation method are provided. The method includes forming a protruding structure over a substrate. The protruding structure has multiple sacrificial layers and multiple semiconductor layers, and the sacrificial layers and the semiconductor layers have an alternating configuration. The method also includes forming a gate stack to wrap a portion of the protruding structure. The method further includes forming an epitaxial structure abutting edges of the semiconductor layers. The formation of the epitaxial structure includes forming a lower semiconductor portion on a bottom of the recess and forming an upper semiconductor portion over the lower semiconductor portion. The upper semiconductor portion and the lower semiconductor portion are oppositely doped.

Abstract: A cell array of a memory device includes: a first deck of memory cells arranged in a first row and a second row extending in a first horizontal direction and a plurality of columns extending in a second horizontal direction, wherein the memory cells in the second row in the first deck is displaced in the first horizontal direction with respect to the memory cells in the first row in the first deck; a first common word line metal track extending in the first horizontal direction, wherein both the memory cells in the first row and the memory cells in the second row are disposed on the first common word line metal track; and a plurality of first bit line metal tracks extending in the second horizontal direction, wherein each of the plurality of first bit line metal tracks is disposed on one of the first deck of memory cells.

Abstract: Disclosed herein is a method for alleviating dry eye syndrome using a composition containing a polylysine nanoparticle. The polylysine nanoparticle is produced by subjecting lysine hydrochloride to a pyrolysis treatment at a temperature ranging from 240° C. to 280° C.

Abstract: A method for fabricating orthodontic appliance using bone expansion for dental alignment is provided.

Abstract: A semiconductor device according to the present disclosure includes a first conductive feature and a second conductive feature in a first dielectric layer, a buffer layer over the first dielectric layer, a second dielectric layer over the buffer layer, a first bottom via extending through the buffer layer and the second dielectric layer, a second bottom via extending through the buffer layer and the second dielectric layer, a first bottom electrode disposed on the first bottom via, a second bottom electrode disposed on the second bottom via, a first magnetic tunnel junction (MTJ) stack over the first bottom electrode, and a second MTJ stack over the second bottom electrode. The first MTJ stack and the second MTJ stack have a same thickness. The first MTJ stack has a first width and the second MTJ stack has a second width greater than the first width.

Abstract: A joint and a connector including the same are provided, and the joint including: a seat body, a movable member, an elastic cushioning member and a sleeve member. The seat body includes a moving space and a barrel defining the moving space, and the barrel is insulated and having a radial cross-section contour which is round. The movable member is movably disposed within the moving space, and the movable member includes an insertion slot and two engaging recesses. The insertion slot extends in an axial direction of the movable member. The elastic cushioning member includes two clamping portions, two cushioning portions and a connecting portion connected between the two clamping portions and the two cushioning portions. Each of the two clamping portions includes a first inclined segment which is at least partially exposed from the end opening of the insertion slot.

Abstract: A one-time programmable (OTP) memory includes a plurality of bit lines, a plurality of word lines, and a plurality of memory cells, each memory cell of the plurality of memory cells including a first terminal coupled to a bit line of the plurality of bit lines, a second terminal coupled to a word line of the plurality of word lines, and a selector coupled between the first terminal and the second terminal and having a threshold voltage that is alterable by an electric current.

Abstract: A package structure includes a mounting pad having a mounting surface; a semiconductor chip having a magnetic device, a first magnetic field shielding, and a molding. The semiconductor chip comprises a first surface perpendicular to a thickness direction of the semiconductor chip, a second surface opposite to the first surface, wherein the second surface is attached to the mounting surface of the mounting pad, and a third surface connecting the first surface and the second surface. The first magnetic field shielding including a plurality of segments laterally at least partially surrounding the semiconductor chip, wherein a bottom surface of the first magnetic field shielding is attached to the mounting surface of the mounting pad, wherein the mounting surface comprises first portion free from overlapping with the first magnetic field shielding from a top view perspective. The molding surrounding the mounting pad and in direct contact with the mounting surface.

Abstract: Memory systems with flexible erase suspend-resume operations are described herein. In one embodiment, a memory device is configured to receive an erase suspend command while a first erase pulse of an erase operation is at a flattop voltage. In response, the memory device suspends the erase operation. The memory device further resumes the erase operation such that a second erase pulse of the erase operation is ramped to the flattop voltage. Absent intervening erase suspend operations, erase operations of the memory device can include a single erase pulse that remains at the flattop voltage for a total duration. A first total duration plus a second total duration the first and second erase pulses, respectively, remain at the flattop voltage remains less than or equal to the total duration the single erase pulse remains at the flattop voltage.

Abstract: A read is initiated with respect to a target cell. A pair of adjacent cells includes a first cell and a second cell each adjacent to the target cell. First cell state information is obtained for the first cell and second cell state information is obtained for the second cell. A state information bin is determined by applying a pre-defined operation to the first cell state information and the second cell state information of the respective pair of adjacent cells. The target cell is assigned to the state information bin. Each state information bin defines a read level offset for reading the target cell.