Patents by Inventor Ching-An Huang

Ching-An Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11948834
    Abstract: Integrated circuit devices and methods of forming the same are provided. A method according to the present disclosure includes providing a workpiece including a semiconductor substrate, a first ILD layer over the semiconductor substrate, and a first metal feature in the first ILD layer; depositing a second metal feature over the workpiece such that the second metal feature is electrically coupled to the first metal feature; patterning the second metal feature to form a first trench adjacent to the first metal feature; depositing a blocking layer over the workpiece, wherein the blocking layer selectively attaches to the first ILD layer; depositing a barrier layer over the workpiece, wherein the barrier layer selectively forms over the second metal feature relative to the first ILD layer; and depositing a second ILD layer over the workpiece.
    Type: Grant
    Filed: February 14, 2022
    Date of Patent: April 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsin-Yen Huang, Hai-Ching Chen, Shau-Lin Shue
  • Patent number: 11947831
    Abstract: A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including: receiving a request to perform a read operation on a segment of the memory device; determining a program erase cycle count associated with the segment of the memory device; determining a temperature offset value for the segment of the memory device based on a write temperature and a read temperature, determining whether the temperature offset value satisfies a threshold criterion associated with the program erase cycle count of the segment; and responsive to determining that the temperature offset value satisfies the threshold criterion, performing a corrective read operation on the segment of the memory device, wherein a sense time parameter of the corrective read operation is modified according to the temperature offset value and the program erase cycle count.
    Type: Grant
    Filed: June 2, 2022
    Date of Patent: April 2, 2024
    Assignee: Micron Technology, Inc.
    Inventors: Zhenming Zhou, Murong Lang, Ching-Huang Lu, Nagendra Prasad Ganesh Rao
  • Publication number: 20240105644
    Abstract: A semiconductor die package includes a high dielectric constant (high-k) dielectric layer over a device region of a first semiconductor die that is bonded with a second semiconductor die in a wafer on wafer (WoW) configuration. A through silicon via (TSV) structure may be formed through the device region. The high-k dielectric layer has an intrinsic negative charge polarity that provides a coupling voltage to modify the electric potential in the device region. In particular, the electron carriers in high-k dielectric layer attracts hole charge carriers in device region, which suppresses trap-assist tunnels that result from surface defects formed during etching of the recess for the TSV structure. Accordingly, the high-k dielectric layer described herein reduces the likelihood of (and/or the magnitude of) current leakage in semiconductor devices that are included in the device region of the first semiconductor die.
    Type: Application
    Filed: January 6, 2023
    Publication date: March 28, 2024
    Inventors: Tsung-Hao YEH, Chien Hung LIU, Hsien Jung CHEN, Hsin Heng WANG, Kuo-Ching HUANG
  • Publication number: 20240101784
    Abstract: A novel additive for recycling thermoset materials, its related recyclable thermoset composition and its application are disclosed. Specifically, the composition of the additive comprises at least one copolymer that has at least one carbamate group, at least one carbonate group and/or at least one urea group, and a number-average molecular weight of the copolymer is between 100 and 50,000 Da.
    Type: Application
    Filed: September 5, 2023
    Publication date: March 28, 2024
    Inventors: Chien-Hsin Wu, Ying-Chi Huang, Ying-Feng Lin, Wen-Chang Chen, Ho-Ching Huang, Ru-Jong Jeng
  • Patent number: 11942130
    Abstract: A bottom-pinned spin-orbit torque magnetic random access memory (SOT-MRAM) is provided in the present invention, including a substrate, a bottom electrode layer on the substrate, a magnetic tunnel junction (MTJ) on the bottom electrode layer, a spin-orbit torque (SOT) layer on the MTJ, a capping layer on the SOT layer, and an injection layer on the capping layer, wherein the injection layer is divided into individual first part and second part, and the first part and the second part are connected respectively with two ends of the capping layer.
    Type: Grant
    Filed: March 23, 2022
    Date of Patent: March 26, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Jian-Jhong Chen, Yi-Ting Wu, Jen-Yu Wang, Cheng-Tung Huang, Po-Chun Yang, Yung-Ching Hsieh
  • Patent number: 11942177
    Abstract: One aspect of this description relates to a memory array. In some embodiments, the memory array includes a first memory cell coupled between a first local select line and a first local bit line, a second memory cell coupled between a second local select line and a second local bit line, a first switch coupled to a global bit line, a second switch coupled between the first local bit line and the first switch, and a third switch coupled between the second local select line and the first switch.
    Type: Grant
    Filed: January 10, 2022
    Date of Patent: March 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chia-Ta Yu, Chia-En Huang, Sai-Hooi Yeong, Yih Wang, Yi-Ching Liu
  • Patent number: 11941210
    Abstract: A detection circuit is provided herein, which includes a first transistor, a second transistor, a third transistor, a light sensor, a capacitor, and a fourth transistor. The first transistor has a control terminal, a first terminal, and a second terminal. The second transistor is coupled to the control terminal. The third transistor is coupled to the control terminal and the second terminal. The light sensor is coupled to the control terminal. The capacitor is coupled to the control terminal. The fourth transistor is coupled to the second terminal.
    Type: Grant
    Filed: November 21, 2022
    Date of Patent: March 26, 2024
    Assignee: INNOLUX CORPORATION
    Inventors: Ya-Li Tsai, Hui-Ching Yang, Yang-Jui Huang, Te-Yu Lee
  • Publication number: 20240096818
    Abstract: Devices and method for forming a shielding assembly including a first chip package structure sensitive to magnetic interference (MI), a second chip package structure sensitive to electromagnetic interference (EMI), and a shield surrounding sidewalls and top surfaces of the first chip package structure and the second chip package structure, in which the shield is a magnetic shielding material. In some embodiments, the shield may include silicon steel, in some embodiments, the shield may include Mu-metal. The silicon-steel-based or Mu-metal-based shield may provide both EMI and MI protection to multiple chip package structures with various susceptibilities to EMI and MI.
    Type: Application
    Filed: April 20, 2023
    Publication date: March 21, 2024
    Inventors: Harry-Hak-Lay Chuang, Yuan-Jen Lee, Kuo-An Liu, Ching-Huang Wang, C.T. Kuo, Tien-Wei Chiang
  • Publication number: 20240092665
    Abstract: A method for treating wastewater containing ertriazole compounds is provided. Hypochlorous acid (HOCl) having a neutral to slightly acidic pH value is added to the wastewater containing triazole compounds for reaction, thereby effectively reacting more than 90% of triazole compounds.
    Type: Application
    Filed: August 31, 2023
    Publication date: March 21, 2024
    Inventors: KUO-CHING LIN, YUNG-CHENG CHIANG, SHR-HAN SHIU, MENG-CHIH CHUNG, YI-SYUAN HUANG
  • Publication number: 20240096408
    Abstract: Control logic in a memory device receives a request to perform a read operation to read data from a memory array of a memory device, the request comprising an indication of a segment of the memory array where the data is stored, and performs a first coarse valley tracking calibration operation on the segment of the memory array. The control logic further configures a read voltage level and one or more parameters associated with the read operation based on a result of the first coarse valley tracking calibration operation and performs a second fine valley tracking calibration operation on the segment of the memory array using the configured read voltage level and the configured one or more parameters.
    Type: Application
    Filed: September 21, 2023
    Publication date: March 21, 2024
    Inventors: Ching-Huang Lu, Yingda Dong
  • Publication number: 20240096705
    Abstract: A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.
    Type: Application
    Filed: November 30, 2023
    Publication date: March 21, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuei-Yu Kao, Chen-Yui Yang, Hsien-Chung Huang, Chao-Cheng Chen, Shih-Yao Lin, Chih-Chung Chiu, Chih-Han Lin, Chen-Ping Chen, Ke-Chia Tseng, Ming-Ching Chang
  • Publication number: 20240096386
    Abstract: A memory circuit includes a first memory cell on a first layer, a second memory cell on a second layer different from the first layer, a first select transistor on a third layer different from the first layer and the second layer, and a first bit line extending in a first direction, and being coupled to the first memory cell and the second memory cell. The memory circuit further includes a first source line extending in the first direction, being coupled to the first memory cell, the second memory cell and the first select transistor, and being separated from the first bit line in a second direction different from the first direction. memory circuit includes a second source line extending in the first direction, and being coupled to the first select transistor.
    Type: Application
    Filed: November 28, 2023
    Publication date: March 21, 2024
    Inventors: Yi-Ching LIU, Chia-En HUANG, Yih WANG
  • Publication number: 20240099167
    Abstract: An embodiment phase change material (PCM) switch may include a PCM element having a first electrode and a second electrode, a heating element coupled to a first side of the PCM element, and a heat spreader formed on a second side of the PCM element opposite to the heating element. The PCM element may include a phase change material that switches from an electrically conducting phase to an electrically insulating phase by application of a heat pulse provided by the heating element. The first electrode, the second electrode, the PCM element, and the heat spreader may be configured as an RF switch that blocks RF signals when the phase change material element is the electrically insulating phase and conducts RF signals when the when the phase change material element is in the electrically conducting phase. The heat spreader may be electrically isolated from the heating element and the PCM element.
    Type: Application
    Filed: April 20, 2023
    Publication date: March 21, 2024
    Inventors: Fu-Hai Li, Yi Ching Ong, Kuo-Ching Huang
  • Patent number: 11935783
    Abstract: Examples of an integrated circuit with an interconnect structure and a method for forming the integrated circuit are provided herein. In some examples, the method includes receiving a workpiece that includes a substrate and an interconnect structure. The interconnect structure includes a first conductive feature disposed within a first inter-level dielectric layer. A blocking layer is selectively formed on the first conductive feature without forming the blocking layer on the first inter-level dielectric layer. An alignment feature is selectively formed on the first inter-level dielectric layer without forming the alignment feature on the blocking layer. The blocking layer is removed from the first conductive feature, and a second inter-level dielectric layer is formed on the alignment feature and on the first conductive feature. The second inter-level dielectric layer is patterned to define a recess for a second conductive feature, and the second conductive feature is formed within the recess.
    Type: Grant
    Filed: May 16, 2022
    Date of Patent: March 19, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsin-Yen Huang, Shao-Kuan Lee, Cheng-Chin Lee, Hai-Ching Chen, Shau-Lin Shue
  • Publication number: 20240087933
    Abstract: A wafer transporting method includes following operations. A plurality of wafers are received in a semiconductor container attached to a mobile vehicle. An air processing system is coupled to a wall of the semiconductor container. The air processing system includes an inlet valve, an outlet valve, a pump between the inlet valve and the outlet valve, and a desiccant coupled to the pump. The semiconductor container is moved. The pump of the air processing system is turned on to extract air from inside the semiconductor container into the air processing system through the inlet valve. Humidity of the air is reduced when the air passes through the desiccant of the air processing system. The air is returned back to the semiconductor container through the outlet valve.
    Type: Application
    Filed: November 22, 2023
    Publication date: March 14, 2024
    Inventors: YOU-CHENG YEH, MAO-CHIH HUANG, YEN-CHING HUANG, YU HSUAN CHUANG, TAI-HSIANG LIN, JIAN-SHIAN LIN
  • Publication number: 20240088025
    Abstract: The present disclosure provides a method for forming an integrated circuit (IC) structure. The method comprises providing a substrate including a conductive feature; forming aluminum (Al)-containing dielectric layer on the conductive feature; forming a low-k dielectric layer on the Al-containing dielectric layer; and etching the low-k dielectric layer to form a contact trench aligned with the conductive feature. A bottom of the contact trench is on a surface of the Al-containing dielectric layer.
    Type: Application
    Filed: November 27, 2023
    Publication date: March 14, 2024
    Inventors: Hsin-Yen Huang, Kai-Fang Cheng, Chi-Lin Teng, Hai-Ching Chen, Tien-I Bao
  • Publication number: 20240088026
    Abstract: A semiconductor device according to embodiments of the present disclosure includes a first die including a first bonding layer and a second die including a second hybrid bonding layer. The first bonding layer includes a first dielectric layer and a first metal coil embedded in the first dielectric layer. The second bonding layer includes a second dielectric layer and a second metal coil embedded in the second dielectric layer. The second hybrid bonding layer is bonded to the first hybrid bonding layer such that the first dielectric layer is bonded to the second dielectric layer and the first metal coil is bonded to the second metal coil.
    Type: Application
    Filed: January 17, 2023
    Publication date: March 14, 2024
    Inventors: Yi Ching Ong, Wei-Cheng Wu, Chien Hung Liu, Harry-Haklay Chuang, Yu-Sheng Chen, Yu-Jen Wang, Kuo-Ching Huang
  • Patent number: 11929681
    Abstract: A scalable multi-phase switching converter includes: converter modules, each including: a loop control unit, which generates a basic trigger pulse according to a feedback signal in master operation mode; and a switching control unit, which determines an operation mode and a corresponding phase serial order according to a setting signal received by a setting pin in a setting mode, and generates a multi-phase trigger pulse signal at a trigger pin according to the basic trigger pulse in master operation mode. The switching control unit receives the multi-phase trigger pulse signal at the trigger pin in slave operation mode. The switching control unit generates an ON-trigger pulse according to the multi-phase trigger pulse signal and the corresponding phase serial order. An ON-period determination unit generates a conduction control pulse according to the ON-trigger pulse to control a corresponding inductor. The trigger pins of the converter modules are coupled to each other.
    Type: Grant
    Filed: February 11, 2022
    Date of Patent: March 12, 2024
    Assignee: RICHTEK TECHNOLOGY CORPORATION
    Inventors: Chih-Wen Hsiao, Ping-Ching Huang, Li-Wen Fang
  • Patent number: D1017596
    Type: Grant
    Filed: June 23, 2021
    Date of Patent: March 12, 2024
    Assignee: Acer Incorporated
    Inventors: Yun-Ju Chou, Pao-Ching Huang, Hsueh-Wei Chung
  • Patent number: D1018907
    Type: Grant
    Filed: November 15, 2021
    Date of Patent: March 19, 2024
    Assignee: CHENG UEI PRECISION INDUSTRY CO., LTD.
    Inventors: Yun-Chien Lee, Yi-Ching Hsu, Pei-Yi Lin, Yu-Hung Su, Sheng-Yuan Huang, Chun-Fu Lin