Patents by Inventor Ching-An Huang

Ching-An Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240130257
    Abstract: Devices and method for forming a switch including a heater layer including a first heater pad, a second heater pad, and a heater line connecting the first heater pad and the second heater pad, a phase change material (PCM) layer positioned in a same vertical plane as the heater line, and a floating spreader layer including a first portion positioned in the same vertical plane as the heater line and the PCM layer, in which the first portion has a first width that is less than or equal to a distance between proximate sidewalls of the first heater pad and the second heater pad.
    Type: Application
    Filed: April 21, 2023
    Publication date: April 18, 2024
    Inventors: Fu-Hai LI, Yi Ching ONG, Hsin Heng WANG, Tsung-Hao YEH, Yu-Wei TING, Kuo-Pin CHANG, Hung-Ju LI, Kuo-Ching HUANG
  • Publication number: 20240117297
    Abstract: A p-aminobenzoic acid-producing microorganism is provided. The p-aminobenzoic acid-producing microorganism is obtained by a method for preparing a p-aminobenzoic acid-producing microorganism. The method for preparing a p-aminobenzoic acid-producing microorganism includes (a) performing an acclimation process on a source microorganism with at least one sulfonamide antibiotic to obtain at least one acclimatized microorganism and (b) screening out at least one p-aminobenzoic acid-producing microorganism from the at least one acclimatized microorganism, wherein the at least one p-aminobenzoic acid-producing microorganism has a higher p-aminobenzoic acid titer than the source microorganism.
    Type: Application
    Filed: December 29, 2022
    Publication date: April 11, 2024
    Applicant: INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
    Inventors: Pei-Ching CHANG, Jhong-De LIN, Ya-Lin LIN, Hung-Yu LIAO, Hsiang Yuan CHU, Jie-Len HUANG
  • Publication number: 20240120010
    Abstract: Control logic in a memory device initiates a program operation on a memory array, the program operation comprising a seeding phase. During the seeding phase, the control logic causes a seeding voltage to be applied to a string of memory cells in a data block of the memory array during the seeding phase of the program operation and causes a first positive voltage to be applied to a first plurality of word lines of the data block during the seeding phase, wherein each of the first plurality of word lines is coupled to a corresponding memory cell of a first plurality of memory cells in the string of memory cells, the first plurality of word lines comprising a selected word line associated with the program operation.
    Type: Application
    Filed: December 19, 2023
    Publication date: April 11, 2024
    Inventors: Vinh Q. Diep, Ching-Huang Lu, Yingda Dong
  • Patent number: 11951637
    Abstract: A calibration apparatus includes a processor, an alignment device, and an arm. The alignment device captures images in a three-dimensional space, and a tool is arranged on a flange of the arm. The processor records a first matrix of transformation between an end-effector coordinate-system and a robot coordinate-system, and performs a tool calibration procedure according to the images captured by the alignment device for obtaining a second matrix of transformation between a tool coordinate-system and the end-effector coordinate-system. The processor calculates relative position of a tool center point of the tool in the robot coordinate-system based on the first and second matrixes, and controls the TCP to move in the three-dimensional space for performing a positioning procedure so as to regard points in an alignment device coordinate-system as points of the TCP, and calculates the relative positions of points in the alignment device coordinate-system and in the robot coordinate-system.
    Type: Grant
    Filed: June 4, 2021
    Date of Patent: April 9, 2024
    Assignee: DELTA ELECTRONICS, INC.
    Inventors: Cheng-Hao Huang, Shi-Yu Wang, Po-Chiao Huang, Han-Ching Lin, Meng-Zong Li
  • Patent number: 11953940
    Abstract: A display apparatus includes a light-transmitting structural plate, some optical microscopic structures, an optical film, a base plate and some light emitting elements. The light-transmitting structural plate has a first side and a second side opposite to each other. The optical microscopic structures are regularly arrayed and formed on the first side or the second side. The optical microscopic structure has an inclined surface connecting at a connecting line and forming an angle ranging between 30 degrees and 150 degrees with a corresponding inclined surface of an adjacent one of the optical microscopic structures. The optical film is located on the first side. The base plate is separated from the second side by a space. The light emitting elements are located inside the space and disposed on the base plate. The light emitting elements respectively emit a light ray to the light-transmitting structural plate.
    Type: Grant
    Filed: October 7, 2020
    Date of Patent: April 9, 2024
    Assignee: DARWIN PRECISIONS CORPORATION
    Inventors: Yu-Cheng Chang, Shu-Ching Peng, Yu-Ming Huang
  • Patent number: 11955154
    Abstract: A sense amplifier circuit includes a sense amplifier, a switch and a temperature compensation circuit. The temperature compensation circuit provides a control signal having a positive temperature coefficient, based on which the switch provides reference impedance for temperature compensation. The sense amplifier includes a first input end coupled to a target bit and a second input end coupled to the switch. The sense amplifier outputs a sense amplifier signal based on the reference impedance and the impedance of the target bit.
    Type: Grant
    Filed: May 16, 2022
    Date of Patent: April 9, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Cheng-Tung Huang, Jen-Yu Wang, Po-Chun Yang, Yi-Ting Wu, Yung-Ching Hsieh, Jian-Jhong Chen, Chia-Wei Lee
  • Patent number: 11955201
    Abstract: A memory device includes a plurality of arrays coupled in parallel with each other. A first array of the plurality of arrays includes a first switch and a plurality of first memory cells that are arranged in a first column, a second switch and a plurality of second memory cells that are arranged in a second column, and at least one data line coupled to the plurality of first memory cells and the plurality of second memory cells. The second switch is configured to output a data signal from the at least one data line to a sense amplifier.
    Type: Grant
    Filed: July 26, 2022
    Date of Patent: April 9, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Meng-Sheng Chang, Chia-En Huang, Yi-Ching Liu, Yih Wang
  • Publication number: 20240114545
    Abstract: A method, a wireless modem and a mobile device for wireless communication are provided. The method for wireless communication includes: judging a plurality of service types for a plurality of cells; judging a plurality of gears for each of the service types; obtaining a customization favor setting; obtaining a plurality of weighted priority values for the plurality of cells according to the plurality of service types and the customization favor setting; obtaining a plurality of weighted signal quality values for the plurality of cells according to the plurality of service types, the plurality of gears for each of the plurality of service types and the customization favor setting; in an idle mode, triggering mobility via cell reselection which uses the weighted priority values or the weighted signal quality values; and in a connected mode, triggering mobility via measurement reports which are generated based on the weighted signal quality values.
    Type: Application
    Filed: October 2, 2023
    Publication date: April 4, 2024
    Inventors: Yu-Ting SUN, Wan-Ting HUANG, I-Ching HSIEH
  • Publication number: 20240114812
    Abstract: A switch includes a heater layer, a phase change material (PCM) layer on the heater layer, and a spreader layer formed in proximity to the PCM layer and including a central region with a first thermal conductivity and an edge region with a second thermal conductivity different than the first thermal conductivity. A method of forming a switch includes forming a heater layer, forming a phase change material (PCM) layer on the heater layer, and forming a spreader layer in proximity to the PCM layer, such that the spreader layer includes a central region with a first thermal conductivity and an edge region with a second thermal conductivity different than the first thermal conductivity.
    Type: Application
    Filed: April 21, 2023
    Publication date: April 4, 2024
    Inventors: Fu-Hai Li, Kuo-Ching Huang, Yi Ching Ong
  • Patent number: 11948834
    Abstract: Integrated circuit devices and methods of forming the same are provided. A method according to the present disclosure includes providing a workpiece including a semiconductor substrate, a first ILD layer over the semiconductor substrate, and a first metal feature in the first ILD layer; depositing a second metal feature over the workpiece such that the second metal feature is electrically coupled to the first metal feature; patterning the second metal feature to form a first trench adjacent to the first metal feature; depositing a blocking layer over the workpiece, wherein the blocking layer selectively attaches to the first ILD layer; depositing a barrier layer over the workpiece, wherein the barrier layer selectively forms over the second metal feature relative to the first ILD layer; and depositing a second ILD layer over the workpiece.
    Type: Grant
    Filed: February 14, 2022
    Date of Patent: April 2, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Hsin-Yen Huang, Hai-Ching Chen, Shau-Lin Shue
  • Patent number: 11947831
    Abstract: A system includes a memory device and a processing device, operatively coupled with the memory device, to perform operations including: receiving a request to perform a read operation on a segment of the memory device; determining a program erase cycle count associated with the segment of the memory device; determining a temperature offset value for the segment of the memory device based on a write temperature and a read temperature, determining whether the temperature offset value satisfies a threshold criterion associated with the program erase cycle count of the segment; and responsive to determining that the temperature offset value satisfies the threshold criterion, performing a corrective read operation on the segment of the memory device, wherein a sense time parameter of the corrective read operation is modified according to the temperature offset value and the program erase cycle count.
    Type: Grant
    Filed: June 2, 2022
    Date of Patent: April 2, 2024
    Assignee: Micron Technology, Inc.
    Inventors: Zhenming Zhou, Murong Lang, Ching-Huang Lu, Nagendra Prasad Ganesh Rao
  • Publication number: 20240101784
    Abstract: A novel additive for recycling thermoset materials, its related recyclable thermoset composition and its application are disclosed. Specifically, the composition of the additive comprises at least one copolymer that has at least one carbamate group, at least one carbonate group and/or at least one urea group, and a number-average molecular weight of the copolymer is between 100 and 50,000 Da.
    Type: Application
    Filed: September 5, 2023
    Publication date: March 28, 2024
    Inventors: Chien-Hsin Wu, Ying-Chi Huang, Ying-Feng Lin, Wen-Chang Chen, Ho-Ching Huang, Ru-Jong Jeng
  • Publication number: 20240105644
    Abstract: A semiconductor die package includes a high dielectric constant (high-k) dielectric layer over a device region of a first semiconductor die that is bonded with a second semiconductor die in a wafer on wafer (WoW) configuration. A through silicon via (TSV) structure may be formed through the device region. The high-k dielectric layer has an intrinsic negative charge polarity that provides a coupling voltage to modify the electric potential in the device region. In particular, the electron carriers in high-k dielectric layer attracts hole charge carriers in device region, which suppresses trap-assist tunnels that result from surface defects formed during etching of the recess for the TSV structure. Accordingly, the high-k dielectric layer described herein reduces the likelihood of (and/or the magnitude of) current leakage in semiconductor devices that are included in the device region of the first semiconductor die.
    Type: Application
    Filed: January 6, 2023
    Publication date: March 28, 2024
    Inventors: Tsung-Hao YEH, Chien Hung LIU, Hsien Jung CHEN, Hsin Heng WANG, Kuo-Ching HUANG
  • Patent number: 11942130
    Abstract: A bottom-pinned spin-orbit torque magnetic random access memory (SOT-MRAM) is provided in the present invention, including a substrate, a bottom electrode layer on the substrate, a magnetic tunnel junction (MTJ) on the bottom electrode layer, a spin-orbit torque (SOT) layer on the MTJ, a capping layer on the SOT layer, and an injection layer on the capping layer, wherein the injection layer is divided into individual first part and second part, and the first part and the second part are connected respectively with two ends of the capping layer.
    Type: Grant
    Filed: March 23, 2022
    Date of Patent: March 26, 2024
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Jian-Jhong Chen, Yi-Ting Wu, Jen-Yu Wang, Cheng-Tung Huang, Po-Chun Yang, Yung-Ching Hsieh
  • Patent number: 11942177
    Abstract: One aspect of this description relates to a memory array. In some embodiments, the memory array includes a first memory cell coupled between a first local select line and a first local bit line, a second memory cell coupled between a second local select line and a second local bit line, a first switch coupled to a global bit line, a second switch coupled between the first local bit line and the first switch, and a third switch coupled between the second local select line and the first switch.
    Type: Grant
    Filed: January 10, 2022
    Date of Patent: March 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chia-Ta Yu, Chia-En Huang, Sai-Hooi Yeong, Yih Wang, Yi-Ching Liu
  • Patent number: 11941210
    Abstract: A detection circuit is provided herein, which includes a first transistor, a second transistor, a third transistor, a light sensor, a capacitor, and a fourth transistor. The first transistor has a control terminal, a first terminal, and a second terminal. The second transistor is coupled to the control terminal. The third transistor is coupled to the control terminal and the second terminal. The light sensor is coupled to the control terminal. The capacitor is coupled to the control terminal. The fourth transistor is coupled to the second terminal.
    Type: Grant
    Filed: November 21, 2022
    Date of Patent: March 26, 2024
    Assignee: INNOLUX CORPORATION
    Inventors: Ya-Li Tsai, Hui-Ching Yang, Yang-Jui Huang, Te-Yu Lee
  • Publication number: 20240092665
    Abstract: A method for treating wastewater containing ertriazole compounds is provided. Hypochlorous acid (HOCl) having a neutral to slightly acidic pH value is added to the wastewater containing triazole compounds for reaction, thereby effectively reacting more than 90% of triazole compounds.
    Type: Application
    Filed: August 31, 2023
    Publication date: March 21, 2024
    Inventors: KUO-CHING LIN, YUNG-CHENG CHIANG, SHR-HAN SHIU, MENG-CHIH CHUNG, YI-SYUAN HUANG
  • Publication number: 20240096818
    Abstract: Devices and method for forming a shielding assembly including a first chip package structure sensitive to magnetic interference (MI), a second chip package structure sensitive to electromagnetic interference (EMI), and a shield surrounding sidewalls and top surfaces of the first chip package structure and the second chip package structure, in which the shield is a magnetic shielding material. In some embodiments, the shield may include silicon steel, in some embodiments, the shield may include Mu-metal. The silicon-steel-based or Mu-metal-based shield may provide both EMI and MI protection to multiple chip package structures with various susceptibilities to EMI and MI.
    Type: Application
    Filed: April 20, 2023
    Publication date: March 21, 2024
    Inventors: Harry-Hak-Lay Chuang, Yuan-Jen Lee, Kuo-An Liu, Ching-Huang Wang, C.T. Kuo, Tien-Wei Chiang
  • Publication number: 20240096408
    Abstract: Control logic in a memory device receives a request to perform a read operation to read data from a memory array of a memory device, the request comprising an indication of a segment of the memory array where the data is stored, and performs a first coarse valley tracking calibration operation on the segment of the memory array. The control logic further configures a read voltage level and one or more parameters associated with the read operation based on a result of the first coarse valley tracking calibration operation and performs a second fine valley tracking calibration operation on the segment of the memory array using the configured read voltage level and the configured one or more parameters.
    Type: Application
    Filed: September 21, 2023
    Publication date: March 21, 2024
    Inventors: Ching-Huang Lu, Yingda Dong
  • Publication number: 20240096705
    Abstract: A semiconductor device includes a plurality of channel layers vertically separated from one another. The semiconductor device also includes an active gate structure comprising a lower portion and an upper portion. The lower portion wraps around each of the plurality of channel layers. The semiconductor device further includes a gate spacer extending along a sidewall of the upper portion of the active gate structure. The gate spacer has a bottom surface. Moreover, a dummy gate dielectric layer is disposed between the gate spacer and a topmost channel layer of plurality of channel layers. The dummy gate dielectric layer is in contact with a top surface of the topmost channel layer, the bottom surface of the gate spacer, and the sidewall of the gate structure.
    Type: Application
    Filed: November 30, 2023
    Publication date: March 21, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Kuei-Yu Kao, Chen-Yui Yang, Hsien-Chung Huang, Chao-Cheng Chen, Shih-Yao Lin, Chih-Chung Chiu, Chih-Han Lin, Chen-Ping Chen, Ke-Chia Tseng, Ming-Ching Chang