Abstract: Methods and semiconductor devices are provided. A method includes determining a location of a polyimide opening (PIO) corresponding to an under-bump metallization (UBM) feature in a die. The die includes a substrate and an interconnect structure over the substrate. The method also includes determining a location of a stacked via structure in the interconnect structure based on the location of the PIO. The method further includes forming, in the interconnect structure, the stacked via structure comprising at most three stacked contact vias at the location of the PIO.

Abstract: A photoresist developer includes a solvent having Hansen solubility parameters of 15<?d<25, 10<?p<25, and 6<?p<30; an acid having an acid dissociation constant, pKa, of ?15<pKa<4, or a base having a pKa of 40>pKa>9.5; and a chelate.

Abstract: A photoresist composition includes a conjugated resist additive, a photoactive compound, and a polymer resin. The conjugated resist additive is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline. The polyacetylene, polythiophene, polyphenylenevinylene, polyfluorene, polypryrrole, the polyphenylene, and polyaniline includes a substituent selected from the group consisting of an alkyl group, an ether group, an ester group, an alkene group, an aromatic group, an anthracene group, an alcohol group, an amine group, a carboxylic acid group, and an amide group. Another photoresist composition includes a polymer resin having a conjugated moiety and a photoactive compound. The conjugated moiety is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline.

Abstract: A method of forming a semiconductor device includes forming a first interconnect structure over a carrier; forming a thermal dissipation block over the carrier; forming metal posts over the first interconnect structure; attaching a first integrated circuit die over the first interconnect structure and the thermal dissipation block; removing the carrier; attaching a semiconductor package to the first interconnect structure and the thermal dissipation block using first electrical connectors and thermal dissipation connectors; and forming external electrical connectors, the external electrical connectors being configured to transmit each external electrical connection into the semiconductor device, the thermal dissipation block being electrically isolated from each external electrical connection.

Abstract: A photoresist composition includes a photoactive compound and a polymer. The polymer has a polymer backbone including one or more groups selected from: The polymer backbone includes at least one group selected from B, C-1, or C-2, wherein ALG is an acid labile group, and X is a linking group.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation, the selectively exposed photoresist layer is developed to form a pattern in the photoresist layer. The photoresist composition includes a polymer including monomer units with photocleaving promoters, wherein the photocleaving promoters are one or more selected from the group consisting of living free radical polymerization chain transfer agents, electron withdrawing groups, bulky two dimensional (2-D) or three dimensional (3-D) organic groups, N-(acyloxy)phthalimides, and electron stimulated radical generators.

Abstract: A method of manufacturing a semiconductor device includes forming a first layer having an organic material over a substrate. A second layer is formed over the first layer, wherein the second layer includes a silicon-containing polymer having pendant acid groups or pendant photoacid generator groups. The forming a second layer includes: forming a layer of a composition including a silicon-based polymer and a material containing an acid group or photoacid generator group over the first layer, floating the material containing an acid group or photoacid generator group over the silicon-based polymer, and reacting the material containing an acid group or photoacid generator group with the silicon-based polymer to form an upper second layer including a silicon-based polymer having pendant acid groups or pendant photoacid generator groups overlying a lower second layer comprising the silicon-based polymer. A photosensitive layer is formed over the second layer, and the photosensitive layer is patterned.

Abstract: A method of forming a patterned photoresist layer includes the following operations: (i) forming a patterned photoresist on a substrate; (ii) forming a molding layer covering the patterned photoresist; (iii) reflowing the patterned photoresist in the molding layer; and (iv) removing the molding layer from the reflowed patterned photoresist. In some embodiments, the molding layer has a glass transition temperature that is greater than or equal to the glass transition temperature of the patterned photoresist. In yet some embodiments, the molding layer has a glass transition temperature that is 3° C.-30° C. less than the glass transition temperature of the patterned photoresist.

Abstract: A method of manufacturing a semiconductor device includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a second layer of a second planarizing material over the first planarizing layer, crosslinking a portion of the first planarizing material and a portion of the second planarizing material, and removing a portion of the second planarizing material that is not crosslinked. In an embodiment, the method further includes forming a third layer of a third planarizing material over the second planarizing material after removing the portion of the second planarizing material that is not crosslinked. The third planarizing material can include a bottom anti-reflective coating or a spin-on carbon, and an acid or an acid generator. The first planarizing material can include a spin-on carbon, and an acid, a thermal acid generator or a photoacid generator.

Abstract: A current transmission assembly and a current transmission system are provided. The current transmission system includes the current transmission assembly and a circuit board structure. The current transmission assembly includes a pluggable component, at least one conductor component, and at least one electrically connecting component. The pluggable component includes a housing, two sets of electrically conductive arms, and two connecting members. Each of the two sets of electrically conductive arms is disposed inside the housing. Each of the conductor components includes an electrical insulator and a wire main body. The electrical insulator encircles the wire main body, so that a first terminal and a second terminal are exposed from the wire main body, and the first terminal is connected to one of the two connecting members. Each of the electrically connecting components includes a connecting portion, to which the second terminal of the wire main body is fixed.

Abstract: The invention relates to an expression system for controlling a network in a cell, wherein the network comprises an actuator molecule and an output molecule, wherein the output molecule is positively or negatively regulated by the actuator molecule, wherein the expression system comprises a recombinant gene encoding a first controller molecule, wherein the first controller molecule positively or negatively regulates the actuator molecule. The invention further relates to a cell comprising the expression system, to a cell for use as a medicament and to a method for controlling a network in a cell.

Abstract: A voltage regulator circuit includes a first amplifier, a second amplifier and a transistor. Respective first input terminals of the first and second amplifiers are coupled to a first reference voltage and a second reference voltage, respectively. A connection terminal of the transistor is coupled to a supply voltage. A control terminal of the transistor is selectively coupled to one of respective output terminals of the first and second amplifiers. When the control terminal of the transistor is coupled to the output terminal of the first amplifier, another connection terminal of the transistor is coupled to a second input terminal of the first amplifier to output a regulated voltage. When the control terminal of the transistor is coupled to the output terminal of the second amplifier, the another connection terminal of the transistor is coupled to a second input terminal of the second amplifier to output the regulated voltage.

Abstract: A driver circuit includes a first output terminal, a first switch, a second switch, a third switch and a power source. The first output terminal is arranged for outputting a data output. The first switch is selectively coupled between the first output terminal and a power supply node according to a data input. The second switch is selectively coupled between the first output terminal and a first reference node according to the data input. The third switch is selectively coupled between the first reference node and a reference voltage. The power source is configured to selectively provide one of a supply voltage signal and a supply current signal to the power supply node. When the power source is configured to provide the supply voltage signal, the third switch is switched on. When the power source is configured to provide the supply current signal, the third switch is switched off.

Abstract: A voltage regulator circuit includes a first amplifier, a second amplifier and a transistor. Respective first input terminals of the first and second amplifiers are coupled to a first reference voltage and a second reference voltage, respectively. A connection terminal of the transistor is coupled to a supply voltage. A control terminal of the transistor is selectively coupled to one of respective output terminals of the first and second amplifiers. When the control terminal of the transistor is coupled to the output terminal of the first amplifier, another connection terminal of the transistor is coupled to a second input terminal of the first amplifier to output a regulated voltage. When the control terminal of the transistor is coupled to the output terminal of the second amplifier, the another connection terminal of the transistor is coupled to a second input terminal of the second amplifier to output the regulated voltage.

Abstract: An integrated circuit in a transmitter includes a multi-lane interface, N signal generating circuits, a lane selection circuit and a control circuit. The multi-lane interface has N lanes. M of the N signal generating circuits are configured to generate M clock signals respectively. (N-M) of the N signal generating circuits are configured to generate (N-M) data signals respectively. The lane selection circuit is configured to select M of the N lanes as M clock lanes by coupling the M clock signals to the M clock lanes respectively, and couple one of the (N-M) data signals to one of remaining (N-M) lanes, serving as (N-M) data lanes, according to a data select signal. The control circuit is configured to generate a data select signal according to a lane identifier of the one of the (N-M) lanes. The data select signal has a signal value mapping to the lane identifier.

Abstract: An electrical connector includes: a longitudinal housing defining a longitudinal direction and a front-rear direction perpendicular to the longitudinal direction; a row of terminals including signal terminals and grounding terminals; and a grounding member retained in the housing and having plural first fingers and plural second fingers, wherein each of the first fingers extends in the longitudinal direction, each of the second fingers extends in the front-rear direction, and each grounding terminal is mechanically and electrically connected with a corresponding first finger and a corresponding second finger.

Abstract: The present disclosure discloses a tire pressure sensor burning device for burning at least one tire pressure sensor having or being externally inputted an exclusive code and a joint code. The tire pressure sensor burning device includes a burning tool in which a communication protocol is stored, and the burning tool includes a transmitting unit connected with the tire pressure sensor and sending a switch command thereto for switching the mode of the tire pressure sensor from the exclusive code to the joint code. The burning tool sends a burning command to the tire pressure sensor with the transmitting unit, and unilaterally burns the communication protocol into the tire pressure sensor via the joint code.

Abstract: A power management circuit includes an inverter circuit and a latch circuit. The inverter circuit is configured to receive a first control signal from an inverter input terminal and generate a second control signal at an inverter output terminal. The first control signal carries power status information of a first supply voltage. The latch circuit has a latch supply terminal, a first latch input terminal and a second latch input terminal. The latch supply terminal is coupled to a second supply voltage becoming ready before the first supply voltage. The first latch input terminal and the second latch input terminal are coupled to the inverter output terminal and the inverter input terminal respectively. The latch circuit is configured to generate a third control signal according to respective signal levels of the first control signal and the second control signal, and accordingly perform power control of an integrated circuit.

Abstract: An integrated circuit in a transmitter includes a multi-lane interface, N signal generating circuits, a lane selection circuit and a control circuit. The multi-lane interface has N lanes. M of the N signal generating circuits are configured to generate M clock signals respectively. (N-M) of the N signal generating circuits are configured to generate (N-M) data signals respectively. The lane selection circuit is configured to select M of the N lanes as M clock lanes by coupling the M clock signals to the M clock lanes respectively, and couple one of the (N-M) data signals to one of remaining (N-M) lanes, serving as (N-M) data lanes, according to a data select signal. The control circuit is configured to generate a data select signal according to a lane identifier of the one of the (N-M) lanes. The data select signal has a signal value mapping to the lane identifier.

Abstract: A power management circuit includes an inverter circuit and a latch circuit. The inverter circuit is configured to receive a first control signal from an inverter input terminal and generate a second control signal at an inverter output terminal. The first control signal carries power status information of a first supply voltage. The latch circuit has a latch supply terminal, a first latch input terminal and a second latch input terminal. The latch supply terminal is coupled to a second supply voltage becoming ready before the first supply voltage. The first latch input terminal and the second latch input terminal are coupled to the inverter output terminal and the inverter input terminal respectively. The latch circuit is configured to generate a third control signal according to respective signal levels of the first control signal and the second control signal, and accordingly perform power control of an integrated circuit.