Abstract: Pellicle-mask systems for advanced lithography, such as extreme ultraviolet lithography, are disclosed herein. An exemplary pellicle-mask system includes a mask having an integrated circuit (IC) pattern, a pellicle membrane, and a pellicle frame. The pellicle frame has a first surface attached to the pellicle membrane and a second surface opposite the first surface attached to the mask, such that the IC pattern of the mask is positioned within an enclosed space defined by the mask, the pellicle membrane, and the pellicle frame. A void is defined between the pellicle frame and the mask, where the void is defined by a portion of the second surface of the pellicle membrane not attached to the mask. The void is not in communication with the enclosed space and is not in communication with an exterior space of the pellicle-mask system.

Abstract: A physical layer circuit at a transmitter includes an encoding chain and a plurality of flip-flops. The encoding chain, including encoding units coupled in series, is configured to encode a plurality of symbols to generate a plurality of first wire states. The encoding units are arranged to receive the symbols respectively, and convert respective symbol values of the symbols to the first wire states respectively. A first encoding unit is configured to convert a symbol value of a corresponding symbol according to a second wire state provided by a second encoding unit. The flip-flops are arranged to receive and output the first wire states according to a clock signal, respectively. One of the flip-flops is coupled between the first encoding unit and the second encoding unit. The second wire state provided by the second encoding unit is sent to the first encoding unit through the one of the flip-flops.

Abstract: A physical layer circuitry (PHY) includes: N signal pads, a four-signal physical medium attachment sublayer (PMA) and M shielding pads. The N signal pads include at least four signal pads. The four-signal PMA is coupled to the four signal pads. The M shielding pads include at least one first shielding pad that is coupled to the four-signal PMA. Additionally, the first shielding pin is located between a second signal pad of the four signal pads and a third signal pad of the four signal pads; and M and N are positive integers.

Abstract: A clock generation circuit arranged in a first system is disclosed. The clock generation circuit includes: a first dual-mode PLL, arranged for generating a first output clock in an integer-N mode or a fractional-N mode selectively, the first output clock being generated based on a first reference clock; and a second dual-mode PLL, arranged for generating a second output clock in an integer-N mode or a fractional-N mode selectively, the second output clock being generated based on the first output clock or a second reference clock selectively. Associated circuitries are also disclosed.

Abstract: A clock generation circuit arranged in a first system is disclosed. The clock generation circuit includes: a first dual-mode PLL, arranged for generating a first output clock in an integer-N mode or a fractional-N mode selectively, the first output clock being generated based on a first reference clock; and a second dual-mode PLL, arranged for generating a second output clock in an integer-N mode or a fractional-N mode selectively, the second output clock being generated based on the first output clock or a second reference clock selectively. Associated circuitries are also disclosed.

Abstract: A reconfigurable pin-to-pin interface includes lane circuits and a reconfiguration circuit. A first lane circuit of the lane circuits obtains a first received signal by receiving a first input signal transmitted via a first lane. A second lane circuit of the lane circuits obtains a second received signal by receiving a second input signal transmitted via a second lane. When the second lane is used as one data lane and the first lane is used as one clock lane, the reconfiguration circuit redirects the first received signal to the second lane circuit for acting as an clock input of the second lane circuit. When the first lane is used as one data lane, the reconfiguration circuit blocks the first received signal from being redirected to the second lane circuit for acting as the clock input of the second lane circuit.

Abstract: An integrated circuit in a physical layer of a receiver is provided. The integrated circuit includes a multi-lane interface, a lane selection circuit and N sampling circuits. The multi-lane interface has N lanes. N is an integer greater than one. The lane selection circuit, coupled to the multi-lane interface, is configured to select M of the N lanes as M clock lanes, and output M signals on the M clock lanes respectively. M is a positive integer less than N. Remaining (N?M) lanes serve as (N?M) data lanes. The N sampling circuits are coupled to the multi-lane interface and the lane selection circuit. (N?M) of the N sampling circuits are coupled to the (N?M) data lanes respectively. Each of the (N?M) sampling circuits is configured to sample a signal on one of the (N?M) data lanes according to one of the M signals on the M clock lanes.

Abstract: A method of forming an oxide layer includes the following steps. A substrate is provided. A surface of the substrate is treated to form an oxygen ion-rich surface. A spin-on-dielectric layer is formed on the oxygen ion-rich surface of the substrate. The present invention also provides a method of forming an oxide layer including the following steps. A substrate is provided. A surface of the substrate is treated with a hydrogen peroxide (H2O2) solution or a surface of the substrate is treated with oxygen containing gas, to form an oxygen ion-rich surface. A spin-on-dielectric layer is formed on the oxygen ion-rich surface of the substrate.

Abstract: A method of fabricating a DRAM includes providing a substrate. Later, a first mask layer is formed to cover the substrate. The first mask layer includes a hydrogen-containing silicon nitride layer and a silicon oxide layer. The hydrogen-containing silicon nitride layer has the chemical formula: SixNyHz, wherein x is between 4 and 8, y is between 3.5 and 9.5, and z equals 1. After that, the first mask layer is patterned to form a first patterned mask layer. Next, the substrate is etched by taking the first patterned mask layer as a mask to form a word line trench. Subsequently, the first patterned mask layer is removed entirely. Finally, a word line is formed in the word line trench.

Abstract: A filter circuit includes an amplifier circuit, a resistor-capacitor (RC) network and a first voltage follower. The amplifier circuit has a first input terminal, a second input terminal and an output terminal. The amplifier circuit is configured to output a first output signal from the output terminal according to a first voltage signal at the first input terminal and a second voltage signal at the second input terminal. The RC network, coupled to the first input terminal, is configured to produce the first voltage signal at least in response to a first current signal applied to the first input terminal. The first voltage follower, coupled to the output terminal, is configured to receive the first output signal, and generate a first filtered signal in response to the first output signal.

Abstract: An integrated circuit includes a first multi-lane interface having a plurality of first lanes, a second multi-lane interface having a plurality of second lanes; a first layer of clock lane selection units arranged to select one or two of the first and second lanes and output signals on the one or two selected lanes; a second layer of clock lane selection units arranged to select the one or two selected lanes as one or two clock lane and output signals on the one or two selected clock lane; and a plurality of sampling units, each coupled to second layer of clock lane selection units, each arranged to sample one of the first and second lanes according to the signal on the selected clock lane.

Abstract: The present invention provides a method for forming an amorphous silicon multiple layer structure, the method comprises the flowing steps: first, a substrate material layer is provided, next, a first amorphous silicon layer is formed on the substrate material layer, wherein the first amorphous silicon layer includes a plurality of hydrogen atoms disposed therein, afterwards, an UV curing process is performed to the first amorphous silicon layer, so as to remove the hydrogen atoms from the first amorphous silicon layer, finally, a second amorphous silicon layer is formed on the first amorphous silicon layer.

Abstract: A physical layer circuitry (PHY) includes: N signal pads, a four-signal physical medium attachment sublayer (PMA) and M shielding pads. The N signal pads include at least four signal pads. The four-signal PMA is coupled to the four signal pads. The M shielding pads include at least one first shielding pad that is coupled to the four-signal PMA. Additionally, the first shielding pin is located between a second signal pad of the four signal pads and a third signal pad of the four signal pads; and M and N are positive integers.

Abstract: An integrated circuit includes a first multi-lane interface having a plurality of first lanes, a second multi-lane interface having a plurality of second lanes; a first layer of clock lane selection units arranged to select one or two of the first and second lanes and output signals on the one or two selected lanes; a second layer of clock lane selection units arranged to select the one or two selected lanes as one or two clock lane and output signals on the one or two selected clock lane; and a plurality of sampling units, each coupled to second layer of clock lane selection units, each arranged to sample one of the first and second lanes according to the signal on the selected clock lane.

Abstract: The present invention provides a method for fabricating a semiconductor device, comprising at least the steps of: providing a substrate in which a memory region and a peripheral region are defined, the memory region includes a plurality of memory cells, each memory cell includes at least a first transistor and a capacitor, the peripheral region compress a second transistor, a first insulating layer is formed within the memory region and the peripheral region by an atomic layer deposition process, covering the capacitor of the memory cells in the memory region and the second transistor in the peripheral region, and a second insulating layer is formed, overlying the first insulating layer and the peripheral region. Finally, a contact structure is formed within the second insulating layer, and electrically connecting the second transistor.

Abstract: The present invention provides pad arrangements, termination circuits, clock/data recovery circuits, and deserialization architecture for a physical layer circuitry including a four-signal or six-signal physical medium attachment sublayer (PMA).

Abstract: A method of fabricating a DRAM includes providing a substrate. Later, a first mask layer is formed to cover the substrate. The first mask layer includes a hydrogen-containing silicon nitride layer and a silicon oxide layer. The hydrogen-containing silicon nitride layer has the chemical formula: SixNyHz, wherein x is between 4 and 8, y is between 3.5 and 9.5, and z equals 1. After that, the first mask layer is patterned to form a first patterned mask layer. Next, the substrate is etched by taking the first patterned mask layer as a mask to form a word line trench. Subsequently, the first patterned mask layer is removed entirely. Finally, a word line is formed in the word line trench.

Abstract: Pellicle-mask systems for advanced lithography, such as extreme ultraviolet lithography, are disclosed herein. An exemplary pellicle-mask system includes a mask having an integrated circuit (IC) pattern, a pellicle membrane, and a pellicle frame. The pellicle frame has a first surface attached to the pellicle membrane and a second surface opposite the first surface attached to the mask, such that the IC pattern of the mask is positioned within an enclosed space defined by the mask, the pellicle membrane, and the pellicle frame. A void is defined between the pellicle frame and the mask, where the void is defined by a portion of the second surface of the pellicle membrane not attached to the mask. The void is not in communication with the enclosed space and is not in communication with an exterior space of the pellicle-mask system.

Abstract: A spin-on-dielectric process includes the following steps. A substrate is provided. A flowable material is spread on a surface of the substrate to forma spin-on-dielectric layer on the substrate, wherein the flowable material is heated to a temperature higher than 25° C.

Abstract: A method of forming an oxide layer includes the following steps. A substrate is provided. A surface of the substrate is treated to form an oxygen ion-rich surface. A spin-on-dielectric layer is formed on the oxygen ion-rich surface of the substrate. The present invention also provides a method of forming an oxide layer including the following steps. A substrate is provided. A surface of the substrate is treated with a hydrogen peroxide (H2O2) solution or a surface of the substrate is treated with oxygen containing gas, to form an oxygen ion-rich surface. A spin-on-dielectric layer is formed on the oxygen ion-rich surface of the substrate.