Patents by Inventor Ching-Hua Hsieh
Ching-Hua Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20200176387Abstract: In an embodiment, a device includes: an integrated circuit die; an encapsulant at least partially encapsulating the integrated circuit die; a redistribution structure on the encapsulant, the redistribution structure being electrically connect to the integrated circuit die, the redistribution structure including a pad; a passive device including a conductive connector physically and electrically connected to the pad; and a protective structure disposed between the passive device and the redistribution structure, the protective structure surrounding the conductive connector, the protective structure including an epoxy flux, the protective structure having a void disposed therein.Type: ApplicationFiled: July 1, 2019Publication date: June 4, 2020Inventors: Jen-Jui Yu, Hao-Jan Pei, Wei-Yu Chen, Chia-Lun Chang, Hsiu-Jen Lin, Ching-Hua Hsieh
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Patent number: 10672729Abstract: A method of forming a package structure includes disposing a semiconductor device over a first dielectric layer, wherein a first redistribution line is in the first dielectric layer, forming a molding compound over the first dielectric layer and in contact with a sidewall of the semiconductor device, forming a second dielectric layer over the molding compound and the semiconductor device, forming a first opening in the second dielectric layer, the molding compound, and the first dielectric layer to expose the first redistribution line, and forming a first conductor in the first opening, wherein the first conductor is electrically connected to the first redistribution line.Type: GrantFiled: October 5, 2017Date of Patent: June 2, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chih-Hsuan Tai, Ting-Ting Kuo, Yu-Chih Huang, Chih-Wei Lin, Hsiu-Jen Lin, Chih-Hua Chen, Ming-Da Cheng, Ching-Hua Hsieh, Hao-Yi Tsai, Chung-Shi Liu
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Publication number: 20200168568Abstract: A package structure includes a semiconductor die, an insulating encapsulant, a first redistribution layer, a second redistribution layer, antenna elements and a first insulating film. The insulating encapsulant is encapsulating the at least one semiconductor die, the insulating encapsulant has a first surface and a second surface opposite to the first surface. The first redistribution layer is disposed on the first surface of the insulating encapsulant. The second redistribution layer is disposed on the second surface of the insulating encapsulant. The antenna elements are located over the second redistribution layer. The first insulating film is disposed in between the second redistribution layer and the antenna elements, wherein the first insulating film comprises a resin rich region and a filler rich region, the resin rich region is located in between the filler rich region and the second redistribution layer and separating the filler rich region from the second redistribution layer.Type: ApplicationFiled: June 14, 2019Publication date: May 28, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Cheng-Yu Kuo, Ching-Hua Hsieh, Chen-Hua Yu, Chung-Shi Liu, Yi-Yang Lei, Wei-Jie Huang
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Patent number: 10658323Abstract: A package structure is provided. The package structure includes a semiconductor die and a protective layer surrounding the semiconductor die. The package structure also includes a conductive structure and a warpage-control element over a same side of the protective layer. A bottom surface of the warpage-control element is higher than a bottom surface of the conductive structure. The bottom surface of the warpage-control element is lower than a top surface of the conductive bump.Type: GrantFiled: April 29, 2019Date of Patent: May 19, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hao-Jan Pei, Chih-Chiang Tsao, Wei-Yu Chen, Hsiu-Jen Lin, Ming-Da Cheng, Ching-Hua Hsieh, Chung-Shi Liu
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Publication number: 20200152599Abstract: A method of manufacturing a semiconductor structure is provided. The method includes providing a first substrate including a plurality of conductive bumps disposed over the first substrate; providing a second substrate; disposing a patterned adhesive over the first substrate, wherein at least a portion of the plurality of conductive bumps is exposed through the patterned adhesive; bonding the first substrate with the second substrate; and singulating a chip from the first substrate.Type: ApplicationFiled: January 14, 2020Publication date: May 14, 2020Inventors: ALEXANDER KALNITSKY, YI-YANG LEI, HSI-CHING WANG, CHENG-YU KUO, TSUNG LUNG HUANG, CHING-HUA HSIEH, CHUNG-SHI LIU, CHEN-HUA YU, CHIN-YU KU, DE-DUI LIAO, KUO-CHIO LIU, KAI-DI WU, KUO-PIN CHANG, SHENG-PIN YANG, ISAAC HUANG
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Publication number: 20200152616Abstract: A manufacturing method of a package-on-package structure includes at least the following steps. A plurality of conductive bumps of a first package is attached to a tape carrier. A second package is coupled to the first package opposite to the plurality of conductive bumps. When coupling the second package, the plurality of conductive bumps are deformed to form a plurality of deformed conductive bumps, and a contact area between the tape carrier and the respective deformed conductive bump increases.Type: ApplicationFiled: January 12, 2020Publication date: May 14, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Hsuan-Ting Kuo, Ching-Hua Hsieh, Cheng-Ting Chen, Hsiu-Jen Lin, Hao-Jan Pei, Yu-Peng Tsai, Chia-Lun Chang, Chih-Chiang Tsao, Philip Yu-Shuan Chung
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Publication number: 20200152576Abstract: Package structures and methods for forming the same are provided. The method includes forming a redistribution structure embedded in a passivation layer over a carrier substrate and bonding an integrated circuit die to the redistribution structure through first connectors. The method further includes removing the carrier substrate to expose a bottom portion of the redistribution structure and removing the bottom portion of the redistribution structure to form an opening in the passivation layer. The method further includes forming a second connector over the redistribution structure. In addition, the second connector includes an extending portion extending into the opening in the passivation layer.Type: ApplicationFiled: January 13, 2020Publication date: May 14, 2020Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Yi-Da TSAI, Cheng-Ping LIN, Wei-Hung LIN, Chih-Wei LIN, Ming-Da CHENG, Ching-Hua HSIEH, Chung-Shi LIU
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Publication number: 20200135652Abstract: A chip package is provided. The chip package includes a semiconductor die and a protection layer surrounding the semiconductor die. The chip package also includes a first dielectric layer over the semiconductor die and the protection layer. The first dielectric layer has an upper surface with cutting scratches. The chip package further includes a conductive layer over the first dielectric layer. In addition, the chip package includes a second dielectric layer over the conductive layer and filling some of the cutting scratches. Bottoms of the cutting scratches are positioned at height levels that are lower than a topmost surface of the first dielectric layer and higher than a topmost surface of the semiconductor die.Type: ApplicationFiled: December 23, 2019Publication date: April 30, 2020Inventors: Shing-Chao CHEN, Chih-Wei LIN, Tsung-Hsien CHIANG, Ming-Da CHENG, Ching-Hua HSIEH
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Patent number: 10636715Abstract: A semiconductor package including a circuit substrate, an interposer structure, a plurality of dies, and an insulating encapsulant is provided. The interposer structure is disposed on the circuit substrate. The plurality of dies is disposed on the interposer structure, wherein the plurality of dies is electrically connected to the circuit substrate through the interposer structure. The insulating encapsulant is disposed on the circuit substrate, wherein the insulating encapsulant surrounds the plurality of dies and the interposer structure and encapsulates at least the interposer structure, the insulating encapsulant has a groove that surrounds the interposer structure and the plurality of dies, and the interposer structure and the plurality of dies are confined to be located within the groove.Type: GrantFiled: January 19, 2018Date of Patent: April 28, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Cheng Lin, Ching-Hua Hsieh, Chen-Hua Yu, Chung-Shi Liu, Chih-Wei Lin
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Publication number: 20200118962Abstract: A manufacturing method for semiconductor packages is provided. Chips are provided on a carrier. Through interlayer vias are formed over the carrier to surround the chips. A molding compound is formed over the carrier to partially and laterally encapsulate the chip and the through interlayer vias. The molding compound comprises pits on a top surface thereof. A polymeric molding compound is formed on the molding compound to fill the pits of the molding compound.Type: ApplicationFiled: December 16, 2019Publication date: April 16, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Meng-Tse Chen, Ching-Hua Hsieh, Chung-Shi Liu, Chih-Wei Lin
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Publication number: 20200106156Abstract: An electronic device and a manufacturing method thereof are provided. The electronic device includes a chip package, an antenna pattern, and an insulating layer. The chip package includes a semiconductor die and an insulating encapsulation enclosing the semiconductor die. The antenna pattern is electrically coupled to the chip package, where a material of the antenna pattern comprises a conductive powder having fused metal particles. The insulating layer disposed between the chip package and the antenna pattern, where the antenna pattern includes a first surface in contact with the insulating layer, and a second surface opposite to the first surface, and a surface roughness of the second surface is greater than a surface roughness of the first surface.Type: ApplicationFiled: April 18, 2019Publication date: April 2, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chun-Lin Lu, Hsiu-Jen Lin, Hsuan-Ting Kuo, Kai-Chiang Wu, Ming-Che Ho, Wei-Yu Chen, Yu-Peng Tsai, Chia-Lun Chang, Chia-Shen Cheng, Chih-Chiang Tsao, Tzu-Chun Tang, Ching-Hua Hsieh, Tuan-Yu Hung, Cheng-Shiuan Wong
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Publication number: 20200105689Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a first semiconductor die, at least one first conductive connector disposed beside the first semiconductor die and electrically coupled to the first semiconductor die, an insulating encapsulation laterally encapsulating the first semiconductor die and the at least one first conductive connector, and a redistribution structure disposed on the insulating encapsulation and being in contact with the first semiconductor die and the at least one first conductive connector. A thickness of the at least one first conductive connector is less than a thickness of the insulating encapsulation.Type: ApplicationFiled: March 5, 2019Publication date: April 2, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Chien-Ling Hwang, Ching-Hua Hsieh, Hsin-Hung Liao, Sung-Yueh Wu
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Publication number: 20200091090Abstract: A package structure including a semiconductor die, a warpage control layer, an insulating encapsulant and a redistribution layer is provided. The semiconductor die has an active surface and a backside surface opposite to the active surface. The warpage control layer is disposed on the backside surface of the semiconductor die, wherein the warpage control layer comprises a material having a Young's Modulus of 100 GPa or more. The insulating encapsulant is encapsulating the semiconductor die and the warpage control layer. The redistribution layer is located on the insulating encapsulant and over the active surface of the semiconductor die.Type: ApplicationFiled: November 21, 2019Publication date: March 19, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Meng-Tse Chen, Ching-Hua Hsieh, Chung-Shi Liu, Chih-Wei Lin, Hao-Cheng Hou, Jung-Wei Cheng
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Publication number: 20200075562Abstract: A method includes forming a composite material layer over a carrier, the composite material layer including particles of a filler material incorporated into a base material, forming a set of through vias over a first side of the composite material layer, attaching a die over the first side of the composite material layer, the die being spaced apart from the set of through vias, forming a molding material over the first side of the composite material layer, the molding material least laterally encapsulating the die and the through vias of the set of through vias, forming a redistribution structure over the die and the molding material, the redistribution structure electrically connected to the through vias, forming openings in a second side of the composite material layer opposite the first side, and forming conductive connectors in the openings, the conductive connectors electrically connected to the through vias.Type: ApplicationFiled: August 2, 2019Publication date: March 5, 2020Inventors: Chen-Hua Yu, Kuo Lung Pan, Tin-Hao Kuo, Hao-Yi Tsai, Hsiu-Jen Lin, Hao-Jan Pei, Ching-Hua Hsieh
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Publication number: 20200075488Abstract: A method includes forming a device structure, the method including forming a first redistribution structure over and electrically connected to a semiconductor device, forming a molding material surrounding the first redistribution structure and the semiconductor device, forming a second redistribution structure over the molding material and the first redistribution structure, the second redistribution structure electrically connected to the first redistribution structure, attaching an interconnect structure to the second redistribution structure, the interconnect structure including a core substrate, the interconnect structure electrically connected to the second redistribution structure, forming an underfill material on sidewalls of the interconnect structure and between the second redistribution structure and the interconnect structure.Type: ApplicationFiled: May 14, 2019Publication date: March 5, 2020Inventors: Jiun Yi Wu, Ching-Hua Hsieh, Chen-Hua Yu, Chung-Shi Liu, Shou-Yi Wang, Chien-Hsun Chen
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Publication number: 20200058627Abstract: A package includes a first redistribution structure, a bridge structure, an adhesive layer, a plurality of conductive pillars, an encapsulant, a first die, and a second die. The bridge structure is disposed on the first redistribution structure. The adhesive layer is disposed between the bridge structure and the first redistribution structure. The conductive pillars surround the bridge structure. A height of the conductive pillars is substantially equal to a sum of a height of the adhesive layer and a height of the bridge structure. The encapsulant encapsulates the bridge structure, the adhesive layer, and the conductive pillars. The first die and the second die are disposed over the bridge structure. The first die is electrically connected to the second die through the bridge structure. The first die and the second die are electrically connected to the first redistribution structure through the conductive pillars.Type: ApplicationFiled: August 14, 2018Publication date: February 20, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Shing-Chao Chen, Ching-Hua Hsieh, Chih-Wei Lin, Sheng-Chieh Yang
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Patent number: 10566261Abstract: A semiconductor structure includes a die embedded in a molding material, the die having die connectors on a first side; a first redistribution structure at the first side of the die, the first redistribution structure being electrically coupled to the die through the die connectors; a second redistribution structure at a second side of the die opposing the first side; and a thermally conductive material in the second redistribution structure, the die being interposed between the thermally conductive material and the first redistribution structure, the thermally conductive material extending through the second redistribution structure, and the thermally conductive material being electrically isolated.Type: GrantFiled: March 29, 2018Date of Patent: February 18, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Hao-Jan Pei, Wei-Yu Chen, Chia-Shen Cheng, Chih-Chiang Tsao, Cheng-Ting Chen, Chia-Lun Chang, Chih-Wei Lin, Hsiu-Jen Lin, Ching-Hua Hsieh, Chung-Shi Liu
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Publication number: 20200044306Abstract: An electronic device and a manufacturing method thereof are provided. The electronic device includes a chip package, a core dielectric layer disposed on the chip package, and an antenna pattern disposed on the core dielectric layer opposite to the chip package. The chip package includes a semiconductor chip, an insulating encapsulation encapsulating the semiconductor chip, and a redistribution structure electrically coupled to the semiconductor chip. The redistribution structure includes a first circuit pattern located at an outermost side of the chip package, and a patterned dielectric layer disposed between the first circuit pattern and the insulating encapsulation. The core dielectric layer is in contact with the first circuit pattern. The core dielectric layer and the patterned dielectric layer are of different materials. The antenna pattern is electrically coupled to the chip package.Type: ApplicationFiled: April 10, 2019Publication date: February 6, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Pei-Hsuan Lee, Ching-Hua Hsieh, Chien-Ling Hwang, Yu-Ting Chiu, Jui-Chang Kuo
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Publication number: 20200020634Abstract: A package and a method of manufacturing the same are provided. The package includes a first die, a second die, a third die, an encapsulant, and a redistribution layer (RDL) structure. The first die and the second die are disposed side by side. The third die is disposed on the first die and the second die to electrically connect the first die and the second die. The encapsulant laterally encapsulates the first die, the second die, and the third die and fills in a gap between the first die, the second die, and the third die. The RDL structure is disposed on the third die and the encapsulant.Type: ApplicationFiled: July 16, 2018Publication date: January 16, 2020Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tsai-Tsung Tsai, Ching-Hua Hsieh, Chih-Wei Lin, Sheng-Hsiang Chiu, Yi-Da Tsai
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Patent number: 10535629Abstract: A method of manufacturing a semiconductor structure includes receiving a first substrate including an IMD layer disposed over the first substrate and a plurality of conductive bumps disposed in the IMD layer; receiving a second substrate; disposing a patterned adhesive over the first substrate, wherein at least a portion of the IMD layer is exposed through the patterned adhesive; and bonding the first substrate with the second substrate, wherein a top surface of the at least portion of the IMD layer is exposed through the patterned adhesive after bonding the first substrate with the second substrate.Type: GrantFiled: December 21, 2018Date of Patent: January 14, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Alexander Kalnitsky, Yi-Yang Lei, Hsi-Ching Wang, Cheng-Yu Kuo, Tsung Lung Huang, Ching-Hua Hsieh, Chung-Shi Liu, Chen-Hua Yu, Chin-Yu Ku, De-Dui Liao, Kuo-Chio Liu, Kai-Di Wu, Kuo-Pin Chang, Sheng-Pin Yang, Isaac Huang