Abstract: Provided is an integrated fan-out package including a die, a first redistribution circuit structure, a second redistribution circuit structure, a plurality of solder joints, a plurality of conductive posts, and an insulating encapsulation. The first redistribution circuit structure and the second redistribution circuit structure are formed respectively over a back surface and an active surface of the die to sandwich the die. The solder joints are formed aside the die and connected to the first redistribution circuit structure. The conductive posts are formed on the solder joints and connected to the second redistribution circuit structure, and connected to the first redistribution circuit structure through the solder joints. A plurality of sidewalls of the die, a plurality of sidewalls of the conductive posts, and a plurality of sidewalls of the solder joints are encapsulated by the insulating encapsulation. A fabricating process of the integrated fan-out package is also provided.

Abstract: Before depositing a metal capping layer on a metal interconnect in a damascene structure, a remote plasma is used to reduce native oxide formed on the metal interconnect. Accordingly, a remote plasma reducing chamber is integrated in a processing platform for depositing a metal capping layer.

Abstract: Package structures and methods for forming the same are provided. The package structure includes an integrated circuit die and a first shielding feature over a base layer. The package structure also includes a package layer encapsulating the integrated circuit die and the first shielding feature. The package structure further includes a second shielding feature extending from the side surface of the base layer towards the first shielding feature to electrically connect to the first shielding feature. The side surface of the second shielding feature faces away from the side surface of the base layer and is substantially coplanar with the side surface of the package layer.

Abstract: A method for mounting components on a substrate is provided. The method includes providing a positioning plate which has a plurality of through holes. The method further includes supplying components each having a longitudinal portion on the positioning plate. The method also includes performing a component alignment process to put the longitudinal portions of the components in the through holes. In addition, the method includes connecting a substrate to the components which have their longitudinal portions in the through holes and removing the positioning plate.

Abstract: A structure includes a first package and a second package. The second package is coupled to the first package by one or more connectors. Epoxy flux residue is disposed around the connectors and in contact with the connectors. A method includes providing a first package having first connector pads and providing a second package having corresponding second connector pads. Solder paste is printed on each of the first connector pads. Epoxy flux is printed on each of the solder paste. The first and second connector pads are aligned and the packages are pressed together. The solder paste is reflowed to connect the first connector pads to the second connector pads while leaving an epoxy flux residue around each of the connections.

Abstract: In accordance with some embodiments, a package-on-package (PoP) structure includes a first semiconductor package having a first side and a second side opposing the first side, a second semiconductor package having a first side and a second side opposing the first side, and a plurality of inter-package connector coupled between the first side of the first semiconductor package and the first side of the second semiconductor package. The PoP structure further includes a first molding material on the second side of the first semiconductor package. The second side of the second semiconductor package is substantially free of the first molding material.

Abstract: A method includes attaching a first semiconductor package on a carrier, wherein the first semiconductor package comprises a plurality of stacked semiconductor dies and a plurality of contact pads, depositing a first molding compound layer over the carrier, wherein the first semiconductor package is embedded in the first molding compound layer, forming a plurality of vias over the plurality of contact pads, attaching a semiconductor die on the first molding compound layer, depositing a second molding compound layer over the carrier, wherein the semiconductor die and the plurality of vias are embedded in the second molding compound layer, forming an interconnect structure over the second molding compound layer and forming a plurality of bumps over the interconnect structure.

Abstract: A package structure includes a molding material, at least one through-via, at least one conductor, at least one dummy structure and an underfill. The through-via extends through the molding material. The conductor is present on the through-via. The dummy structure is present on the molding material and includes a dielectric material. The underfill is at least partially present between the conductor and the dummy structure.

Abstract: Package structures and methods for forming the same are provided. The package structure includes an integrated circuit die and a first shielding feature over a base layer. The package structure also includes a package layer encapsulating the integrated circuit die and the first shielding feature. The package structure further includes a second shielding feature extending from the side surface of the base layer towards the first shielding feature to electrically connect to the first shielding feature. The side surface of the second shielding feature faces away from the side surface of the base layer and is substantially coplanar with the side surface of the package layer.

Abstract: A method of manufacturing a semiconductor structure, comprising: receiving a first substrate including a first surface, a second surface opposite to the first surface and a plurality of conductive bumps disposed over the first surface; receiving a second substrate; disposing an adhesive over the first substrate or the second substrate; heating the adhesive in a first ambiance; bonding the first substrate with the second substrate by applying a force of less than about 10,000N upon the first substrate or the second substrate and heating the adhesive in a second ambiance; and thinning down a thickness of the first substrate from the second surface.

Abstract: A system and method for manufacturing a semiconductor device are provided. In an embodiment a first semiconductor device and a second semiconductor device are encapsulated with an encapsulant. A dielectric layer is formed over the encapsulant, the first semiconductor device, and the second semiconductor device. The dielectric layer is planarized in order to reset the planarity of the dielectric layer.

Abstract: A system and method for manufacturing a semiconductor device are provided. In an embodiment a first semiconductor device and a second semiconductor device are encapsulated with an encapsulant. A dielectric layer is formed over the encapsulant, the first semiconductor device, and the second semiconductor device. The dielectric layer is planarized in order to reset the planarity of the dielectric layer.

Abstract: An embodiment is a method including bonding a first package to a first set of conductive pads of a second package with a first set of solder joints, testing the first package for defects, heating the first set of solder joints by directing a laser beam at a surface of the first package based on testing the first package for defects, after the first set of solder joints are heated, removing the first package, and bonding a third package to the first set of conductive pads of the second package.

Abstract: A device includes a conductive layer including a bottom portion, and a sidewall portion over the bottom portion, wherein the sidewall portion is connected to an end of the bottom portion. An aluminum-containing layer overlaps the bottom portion of the conductive layer, wherein a top surface of the aluminum-containing layer is substantially level with a top edge of the sidewall portion of the conductive layer. An aluminum oxide layer is overlying the aluminum-containing layer. A copper-containing region is over the aluminum oxide layer, and is spaced apart from the aluminum-containing layer by the aluminum oxide layer. The copper-containing region is electrically coupled to the aluminum-containing layer through the top edge of the sidewall portion of the conductive layer.

Abstract: Embodiments of the present disclosure include a semiconductor device and methods of forming the same. A representative embodiment includes a method of forming a semiconductor device that includes a first conductive feature over a substrate, a dielectric layer over the conductive feature, and an opening through the dielectric layer to the first conductive feature. The method further includes selectively forming a first capping layer over the first conductive feature in the opening, and a second conductive feature on the first capping layer.

Abstract: A self-aligned repairing process for a barrier layer is provided. A repair layer is formed by chemical vapor deposition using an organometallic compound as a precursor gas. The precursor gas adsorbed on a dielectric layer exposed by defects in a barrier layer is transformed to an insulating metal oxide layer, and the precursor gas adsorbed on the barrier layer is transformed to a metal layer.

Abstract: A device includes a conductive layer including a bottom portion, and a sidewall portion over the bottom portion, wherein the sidewall portion is connected to an end of the bottom portion. An aluminum-containing layer overlaps the bottom portion of the conductive layer, wherein a top surface of the aluminum-containing layer is substantially level with a top edge of the sidewall portion of the conductive layer. An aluminum oxide layer is overlying the aluminum-containing layer. A copper-containing region is over the aluminum oxide layer, and is spaced apart from the aluminum-containing layer by the aluminum oxide layer. The copper-containing region is electrically coupled to the aluminum-containing layer through the top edge of the sidewall portion of the conductive layer.

Abstract: A method of forming a target pattern includes forming a plurality of lines over a substrate and forming spacer features on sidewalls of the lines. The method further includes shrinking the spacer features using a wet process. After the shrinking of the spacer features, the method further includes removing the lines thereby providing the shrunk spacer features over the substrate.

Abstract: Embodiments of the present disclosure include a semiconductor device and methods of forming the same. An embodiment is a method for of forming a semiconductor device, the method including forming a first conductive feature over a substrate, forming a dielectric layer over the conductive feature, and forming an opening through the dielectric layer to the first conductive feature. The method further includes selectively forming a first capping layer over the first conductive feature in the opening, and forming a second conductive feature on the first capping layer.

Abstract: Before depositing a metal capping layer on a metal interconnect in a damascene structure, a remote plasma is used to reduce native oxide formed on the metal interconnect. Accordingly, a remote plasma reducing chamber is integrated in a processing platform for depositing a metal capping layer.