Abstract: Package structures and methods for forming the same are provided. A package structure includes a package layer. The package structure also includes an integrated circuit die and a first connector embedded in the package layer. The package structure further includes a redistribution layer over the package layer. The integrated circuit die is electrically connected to the redistribution layer through the first connector. In addition, the package structure includes a passivation layer over the redistribution layer. The package structure also includes a second connector over the passivation layer. A first portion of the redistribution layer and a second portion of the second connector extend into the passivation layer. The second portion of the second connector has a tapered profile along a direction from the integrated circuit die towards the first connector.

Abstract: A manufacturing method of a package on package structure includes the following steps. A first package is provided on a tape carrier, wherein the first package includes an encapsulated semiconductor device, a first redistribution structure disposed on a first side of the encapsulated semiconductor device, and a plurality of conductive bumps disposed on the first redistribution structure and attached to the tape carrier. A second package is mounted on the first package through a plurality of electrical terminals by a thermo-compression bonding process, which deforms the conductive bumps into a plurality of deformed conductive bumps. Each of the deformed conductive bumps comprises a base portion connecting the first redistribution structure and a tip portion connecting the base portion, and a curvature of the base portion is substantially smaller than a curvature of the tip portion.

Abstract: A manufacturing method of a package on package structure includes the following steps. A first package is provided on a tape carrier, wherein the first package includes an encapsulated semiconductor device, a first redistribution structure disposed on a first side of the encapsulated semiconductor device, and a plurality of conductive bumps disposed on the first redistribution structure and attached to the tape carrier. A second package is mounted on the first package through a plurality of electrical terminals by a thermo-compression bonding process, which deforms the conductive bumps into a plurality of deformed conductive bumps. Each of the deformed conductive bumps comprises a base portion connecting the first redistribution structure and a tip portion connecting the base portion, and a curvature of the base portion is substantially smaller than a curvature of the tip portion.

Abstract: A semiconductor structure includes a die embedded in a molding material, the die having die connectors on a first side; a first redistribution structure at the first side of the die, the first redistribution structure being electrically coupled to the die through the die connectors; a second redistribution structure at a second side of the die opposing the first side; and a thermally conductive material in the second redistribution structure, the die being interposed between the thermally conductive material and the first redistribution structure, the thermally conductive material extending through the second redistribution structure, and the thermally conductive material being electrically isolated.

Abstract: Physical vapor deposition systems are disclosed herein. An exemplary physical vapor deposition system includes a target, a collimator, a power source system, and a control system. The power source system is configured to supply power to the collimator and the target. The control system is configured to control the power source system, such that the collimator is bombarded with noble gas ions during a sputtering process and the target is bombarded with metal ions during a re-sputtering process, wherein the collimator functions as a sputtering target during the sputtering process and as the collimator during the re-sputtering process.

Abstract: A chip package is provided. The chip package includes a semiconductor die and a protection layer surrounding the semiconductor die. The chip package also includes a dielectric layer over the semiconductor die and the protection layer. The dielectric layer has an upper surface with cutting scratches. The chip package further includes a conductive layer over the dielectric layer and filling some of the cutting scratches.

Abstract: A polishing pad, a polishing apparatus and a method of manufacturing a semiconductor package using the same are provided. In some embodiments, a polishing pad includes a sub-pad portion and a top pad portion over the sub-pad portion. The top pad portion includes a plurality of grooves having a first width and a plurality of openings having a second width different from the first width, and the openings are located in a center zone of the polishing pad.

Abstract: A semiconductor package and a manufacturing method for the semiconductor package are provided. The semiconductor package has at least one chip, through interlayer vias aside the chip and a composite molding compound encapsulating the chip and the through interlayer vias. The semiconductor package may further include a redistribution layer and conductive elements disposed on the redistribution layer.

Abstract: A package structure including a semiconductor die, a warpage control layer, an insulating encapsulant and a redistribution layer is provided. The semiconductor die has an active surface and a backside surface opposite to the active surface. The warpage control layer is disposed on the backside surface of the semiconductor die, wherein the warpage control layer comprises a material having a Young's Modulus of 100 GPa or more. The insulating encapsulant is encapsulating the semiconductor die and the warpage control layer. The redistribution layer is located on the insulating encapsulant and over the active surface of the semiconductor die.

Abstract: A semiconductor structure includes a die embedded in a molding material, the die having die connectors on a first side; a first redistribution structure at the first side of the die, the first redistribution structure being electrically coupled to the die through the die connectors; a second redistribution structure at a second side of the die opposing the first side; and a thermally conductive material in the second redistribution structure, the die being interposed between the thermally conductive material and the first redistribution structure, the thermally conductive material extending through the second redistribution structure, and the thermally conductive material being electrically isolated.

Abstract: A semiconductor package structure includes a plurality of first dies spaced from each other, a molding layer between the first dies, a second die over the plurality of first dies and the molding layer, and an adhesive layer between the plurality of first dies and the second die, and between the molding layer and the second die. A first interface between the adhesive layer and the molding layer and a second interface between the adhesive layer and the plurality of first dies are at different levels.

Abstract: A method of manufacturing an integrated fan-out (InFO) package includes at least the following steps. A package array is formed. A dielectric layer having a core layer formed thereon is provided. The core layer includes a plurality of cavities penetrating through the core layer. The dielectric layer and the core layer are attached onto the package array such that the core layer is located between the dielectric layer and the package array. A plurality of first conductive patches is formed on the dielectric layer above the cavities.

Abstract: A semiconductor device including a chip package, a dielectric structure and a first antenna pattern is provided. The dielectric structure disposed on the chip package and includes a cavity and a vent in communication with the cavity. The first antenna pattern disposed on the dielectric structure, wherein the chip package is electrically coupled to the first antenna pattern, and the cavity of the dielectric structure is disposed between the chip package and the first antenna pattern. A manufacturing method of a semiconductor device is also provided.

Abstract: A package structure including a semiconductor die, a warpage control layer, an insulating encapsulant and a redistribution layer is provided. The semiconductor die has an active surface and a backside surface opposite to the active surface. The warpage control layer is disposed on the backside surface of the semiconductor die, wherein the warpage control layer comprises a material having a Young's Modulus of 100 GPa or more. The insulating encapsulant is encapsulating the semiconductor die and the warpage control layer. The redistribution layer is located on the insulating encapsulant and over the active surface of the semiconductor die.

Abstract: A method includes picking up a first package component, removing an oxide layer on an electrical connector of the first package component, placing the first package component on a second package component after the oxide layer is removed, and bonding the first package component to the second package component.

Abstract: A method for mounting components on a substrate is provided. The method includes providing a positioning plate which has a plurality of through holes. The method further includes supplying components each having a longitudinal portion on the positioning plate. The method also includes performing a component alignment process to put the longitudinal portions of the components in the through holes. In addition, the method includes connecting a substrate to the components which have their longitudinal portions in the through holes and removing the positioning plate.

Abstract: In an embodiment, a method includes: aligning a first package component with a second package component, the first package component having a first region and a second region, the first region including a first conductive connector, the second region including a second conductive connector; performing a first laser shot on a first portion of a top surface of the first package component, the first laser shot reflowing the first conductive connector of the first region, the first portion of the top surface of the first package component completely overlapping the first region; and after performing the first laser shot, performing a second laser shot on a second portion of the top surface of the first package component, the second laser shot reflowing the second conductive connector of the second region, the second portion of the top surface of the first package component completely overlapping the second region.

Abstract: A method includes performing a first laser shot on a first portion of a top surface of a first package component. The first package component is over a second package component, and a first solder region between the first package component and the second package component is reflowed by the first laser shot. After the first laser shot, a second laser shot is performed on a second portion of the top surface of the first package component. A second solder region between the first package component and the second package component is reflowed by the second laser shot.

Abstract: A package structure is provided. The package structure includes a semiconductor die and a protective layer surrounding the semiconductor die. The package structure also includes a conductive structure and a warpage-control element over a same side of the protective layer. A bottom surface of the warpage-control element is higher than a bottom surface of the conductive structure. The bottom surface of the warpage-control element is lower than a top surface of the conductive bump.

Abstract: A manufacturing method of integrated fan-out package includes following steps. First and second dies are provided on adhesive layer formed on carrier. Heights of first and second dies are different. First and second dies respectively has first and second conductive posts each having substantially a same height. The dies are pressed against adhesive layer to make active surfaces thereof be in direct contact with adhesive layer and conductive posts thereof be submerged into adhesive layer. Adhesive layer is cured. Encapsulant is formed to encapsulate the dies. Carrier is removed from adhesive layer. Heights of first and second conductive posts are reduced and portions of the adhesive layer is removed. First and second conductive posts are laterally wrapped by and exposed from adhesive layer. Top surfaces of first and second conductive posts are leveled. Redistribution structure is formed over adhesive layer and is electrically connected to first and second conductive posts.