Abstract: Technology for an Information Centric Networking gateway (ICN-GW) operable to modify an ICN message received from a user equipment (UE) in a Fifth Generation (5G) cellular network is disclosed. The ICN-GW can decode the ICN message received from the UE via a Next Generation NodeB (gNB) and an ICN point of attachment (ICN-PoA). The ICN-GW can modify the ICN message to produce a modified ICN message. The ICN-GW can encode the modified ICN message to route the modified ICN message to a data network.

Abstract: A network connection control system and method is provided. The network connection control system includes user equipments, base stations, a server and first and second processing units. Each user equipment transmits a network parameter between it and every base station to the server through the base station connected therewith. The first processing unit assigns CIO set values corresponding to the base station. The network connection control system is configured to perform an optimizing procedure. In the optimizing procedure, according to the CIO set values, the network parameters, the throughput objective function and connection and network resource constraints of all the user equipments and base stations, the first and second processing units processes based on classical algorithm and quantum annealing algorithm respectively to obtain the optimized connection configuration.

Abstract: Technology for an Information Centric Networking gateway (ICN-GW) operable to modify an ICN message received from a user equipment (UE) in a Fifth Generation (5G) cellular network is disclosed. The ICN-GW can decode the ICN message received from the UE via a Next Generation NodeB (gNB) and an ICN point of attachment (ICN-PoA). The ICN-GW can modify the ICN message to produce a modified ICN message. The ICN-GW can encode the modified ICN message to route the modified ICN message to a data network.

Abstract: A semiconductor device and a method of manufacturing the same are provided. The semiconductor device includes a first conductive pattern disposed within a first region from a top view perspective and extending along a first direction, a first phase shift circuit disposed within the first region, a first transmission circuit disposed within a second region from the top view perspective, and a first gate conductor extending from the first region to the second region along a second direction perpendicular to the first direction. The first phase shift circuit and the first transmission circuit are electrically connected with the first conductive pattern through the first gate conductor.

Abstract: An overlay mark includes a first feature extending in an X-direction, wherein the first feature is a first distance from a substrate. The overlay mark further includes a second feature extending in a Y-direction perpendicular to the X-direction, wherein the second feature is a second distance from the substrate, and the second distance is different from the first distance, wherein at least one of the first feature or the second feature comprises a conductive material. The overlay mark further includes a third feature extending in the X-direction and the Y-direction, wherein the third feature is a third distance from the substrate, and the third distance is different from the first distance and the second distance. The first distance, the second distance and the third distance from the substrate are along a Z-direction perpendicular to both the X-direction and the Y-direction.

Abstract: Systems and methods provide solutions for reliable data transfer in a mobile communication network. A user equipment (UE) may indicate to the mobile communication network a capability of the UE to support a reliable data service protocol. The UE may process non-access stratum (NAS) messages, for both mobile originated (MO) data transfer and mobile terminated (MT) data transfer, using the reliable data service protocol to determine whether protocol data units (PDUs) of the NAS messages require no acknowledgement, require acknowledgment, or include an acknowledgement, and to detect and eliminate duplicate PDUs received at the UE in the NAS messages.

Abstract: Relay service is enabled between a residential gateway and a remote user. For example, a 5G residential gateway (5G-RG) may include a relay user equipment (UE) to enable relay service for a 5G core (5GC)-capable UE behind the 5G-RG to connect to the 5GC. The relay UE of the 5G-RG may provide a trusted/untrusted non-3GPP access network for L2 or L3 transport connection to the 5GC-capable UE.

Abstract: Systems and methods are provided to control traffic accessing a public land mobile network service (PLMN) at a non-public network to perform local breakout for selected traffic.

Abstract: Methods, apparatus circuitry, and storage media are described for mobile-terminated packet transmissions. In one embodiment, an apparatus of a control plane device configured to operate within an evolved packet network core identifies a first service flow event trigger associated with a first packet data unit (PDU) session and processes a path reselection for a first PDU session in response to the first service flow event trigger, wherein the path reselection determines a new gateway for the first PDU session resulting from the path reselection. Transmission of a change notification to an application server controller associated with the first PDU session is initiated in response to the path reselection. Transmission of a routing update to the new gateway in response to the path reselection is also initiated. In various embodiments, the trigger may be a mobility event, a load balancing event, or operations in association with an application server controller.

Abstract: A semiconductor device includes first and second conductive layers, a first epitaxial structure and a first via structure. The first conductive layer extends along a first direction, and provides a first reference voltage signal. The second conductive layer extends along the first direction, and is separated from the first conductive layer along a second direction. The first epitaxial structure is disposed between the first conductive layer and the second conductive layer, and has a first width along the first direction. The first via structure is disposed between the first conductive layer and the second conductive layer, and transmits the first reference voltage signal from the first conductive layer through the second conductive layer to the first epitaxial structure. The first via structure has a second width along the first direction. The second width is approximately equal to or larger than twice of the first width.

Abstract: A display module has a touch display area, a non-touch display area and a frame area surrounding them. The display module includes a cover plate, an ink layer, a touch display panel, a non-touch display panel and an optical matching layer. The ink layer is disposed on the cover plate and corresponds to the frame area. The touch display panel and the non-touch display panel are disposed on a side of the ink layer opposite to the cover plate and respectively correspond to the touch display area and the non-touch display area. The optical matching layer is disposed between the cover plate and one of the touch display panel and the non-touch display panel. A difference of average reflectance to external light between any two of the above areas is less than 1.5%, and a chromaticity difference between any two of the above areas is less than 1.5.

Abstract: A method of forming a semiconductor device includes forming a mask layer over a substrate and forming an opening in the mask layer. A gap-filling material is deposited in the opening. A plasma treatment is performed on the gap-filling material. The height of the gap-filling material is reduced. The mask layer is removed. The substrate is patterned using the gap-filling material as a mask.

Abstract: An embodiment is an apparatus, such as a plasma chamber. The apparatus includes chamber walls and a chamber window defining an enclosed space. A chamber window is disposed between a plasma antenna and a substrate support. A gas delivery source is mechanically coupled to the chamber window. The gas delivery source comprises a gas injector having a passageway, a window at a first end of the passageway, and a nozzle at a second end of the passageway. The nozzle of the gas delivery source is disposed in the enclosed space. A fastening device is mechanically coupled to the gas delivery source. The fastening device is adjustable to adjust a sealing force against the gas injector.

Abstract: Disclosed is a semiconductor device and a method for fabricating such semiconductor device, specifically a High Electron Mobility Transistor (HEMT) with a back barrier layer for blocking electron leakage and improve threshold voltage. In one embodiment, a semiconductor device, includes: a Gallium Nitride (GaN) layer; a front barrier layer over the GaN layer; a source electrode, a drain electrode and a gate electrode formed over the front barrier layer; a 2-Dimensional Electron Gas (2-DEG) in the GaN layer at a first interface between the GaN layer and the front barrier layer; and a back barrier layer in the GaN layer, wherein the back barrier layer comprises Aluminum Nitride (AlN).

Abstract: Systems and methods provide solutions for reliable data transfer in a mobile communication network. A user equipment (UE) may indicate to the mobile communication network a capability of the UE to support a reliable data service protocol. The UE may process non-access stratum (NAS) messages, for both mobile originated (MO) data transfer and mobile terminated (MT) data transfer, using the reliable data service protocol to determine whether protocol data units (PDUs) of the NAS messages require no acknowledgement, require acknowledgment, or include an acknowledgement, and to detect and eliminate duplicate PDUs received at the UE in the NAS messages.

Abstract: A method is provided, including following operations: identifying a first contact via, a second contact via, or a combination thereof in a first standard cell, wherein the first contact via is coupled between a first active region and a first conductive line on a first side, and the second contact via is coupled between a second active region and a second conductive line on a second side; calculating a first cell height according to a first width of the first and second active regions, and calculating a second cell height according to a second width of the first and second active regions; calculating multiple first available cell heights based on a ratio between the first and second cell heights; generating layout designs of multiple first cells; and manufacturing at least first one element in the integrated circuit based on the layout designs of the first cells.

Abstract: Structures and methods for controlling dopant diffusion and activation are disclosed. In one example, a semiconductor structure is disclosed. The semiconductor structure includes: a channel layer; a barrier layer over the channel layer; a gate electrode over the barrier layer; and a doped layer formed between the barrier layer and the gate electrode. The doped layer includes (a) an interface layer in contact with the barrier layer and (b) a main layer between the interface layer and the gate electrode. The doped layer comprises a dopant whose doping concentration in the interface layer is lower than that in the main layer.

Abstract: A method for manufacturing a semiconductor device includes forming a photoresist layer including a photoresist composition over a substrate. The photoresist layer is selectively exposed to actinic radiation to form a latent pattern and the latent pattern is developed by applying a developer to the selectively exposed photoresist layer to form a patterned photoresist. The photoresist composition includes a photoactive compound and a resin comprising a radical-active functional group and an acid labile group.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist underlayer over a semiconductor substrate. The underlayer includes a polymer having a photocleavable functional group. A photoresist layer is formed over the underlayer. The photoresist layer is selectively exposed to actinic radiation, and the selectively exposed photoresist layer is developed to form a photoresist pattern.

Abstract: A method of manufacturing a semiconductor device includes forming a photoresist underlayer including a photoresist underlayer composition over a semiconductor substrate and forming a photoresist layer comprising a photoresist composition over the photoresist underlayer. The photoresist layer is selectively exposed to actinic radiation, and the photoresist layer is developed to form a pattern in the photoresist layer. The photoresist underlayer composition includes: a first polymer having one or more of pendant acid-labile groups and pendant epoxy groups, a second polymer having one or more crosslinking groups, an acid generator, a quencher or photodecomposable base, and a solvent. The photoresist underlayer composition includes 0 wt. % to 10 wt. % of the quencher or photodecomposable base based on a total weight of the first and second polymers.