Abstract: A fin field effect transistor (fin FET) is formed using a bulk silicon substrate and sufficiently guarantees a top channel length formed under a gate, by forming a recess having a predetermined depth in a fin active region and then by forming the gate in an upper part of the recess. A device isolation film is formed to define a non-active region and a fin active region in a predetermined region of the substrate. In a portion of the device isolation film a first recess is formed, and in a portion of the fin active region a second recess having a depth shallower than the first recess is formed. A gate insulation layer is formed within the second recess, and a gate is formed in an upper part of the second recess. A source/drain region is formed in the fin active region of both sides of a gate electrode.

Abstract: A method of forming a pattern on a mask sheet using a laser beam includes determining a target scan line with respect to the mask sheet, which corresponds to a position of the pattern on a final mask sheet, determining a correction scan line with respect to the mask sheet, along which the laser beam is scanned to form the pattern of the final mask sheet, applying a counter force to the mask sheet, fixing the mask sheet onto a mask frame while the counter force is applied to the mask sheet, scanning the laser beam along the correction scan line, and releasing the counter force which is applied to the mask sheet.

Abstract: A laser processing apparatus includes a laser generator for generating laser beams, a diffraction optic element for dividing the laser beam generated by the laser generator into a plurality of sub-laser beams, and a beam number controller for controlling the number of the plurality of sub-laser beams. Accordingly, the diffractive optic element that splits a laser beam generated by the laser beam generator into a plurality of sub-laser beams and the beam number controller that controls the number of sub-laser beams are provided so that the processing speed of a processing target can be improved and, at the same time, the number of laser beams can be promptly controlled, thereby promptly forming various patterns of the processing target.

Abstract: A thin film deposition apparatus includes a deposition source that is disposed opposite to a substrate and holds a deposition material that is vaporized; a first nozzle unit disposed between the substrate and the deposition source and having first slit units arranged in a first direction of the substrate; a second nozzle unit disposed between the first nozzle unit and the substrate and having second slit units arranged in the first direction of the substrate; and at least one barrier member assembly disposed between the first nozzle unit and the second nozzle unit and partitioning the space between the first nozzle unit and the second nozzle unit. A deposition blade is optionally disposed in any space formed between the first nozzle unit and the second nozzle unit during a stand-by mode to prevent the deposition of the deposition material from being deposited onto undesirable regions of the chamber.

Abstract: A display device includes a substrate, a display unit formed on the substrate, a sealing substrate bonded to the substrate by a bonding layer surrounding the display unit, the sealing substrate comprising a complex member and an insulating member, wherein the complex member has a resin matrix and a plurality of carbon fibers and the insulator is connected to an edge of the complex member and comprises a penetration hole, a metal layer disposed at one side of the sealing substrate wherein the one side faces the substrate, and a conductive connection unit filling in the penetration hole and contacting the metal layer. The complex member and the insulator may be coupled by tongue and groove coupling along a thickness direction of the sealing substrate where the protrusion-groove coupling structure is top-to-bottom symmetric and the insulator may have a thickness identical to that of the complex member.

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a substrate including a first region and a second region, a first transistor and a second transistor formed on the first region and the second region, respectively, a first contact formed on the first transistor, and a second contact formed on the second transistor. The first contact includes a first work function control layer having a first thickness and a first conductive layer formed on the first work function control layer, the second contact includes a second work function control layer having a second thickness different from the first thickness and a second conductive layer formed on the second work function control layer, and the first contact and the second contact have different work functions.

Abstract: A laser processing apparatus includes a laser generator for generating laser beams, a diffraction optic element for dividing the laser beam generated by the laser generator into a plurality of sub-laser beams, and a beam number controller for controlling the number of the plurality of sub-laser beams. Accordingly, the diffractive optic element that splits a laser beam generated by the laser beam generator into a plurality of sub-laser beams and the beam number controller that controls the number of sub-laser beams are provided so that the processing speed of a processing target can be improved and, at the same time, the number of laser beams can be promptly controlled, thereby promptly forming various patterns of the processing target.

Abstract: A sheet cutting apparatus and a sheet cutting method using the same are disclosed. In one aspect, the sheet cutting apparatus includes a holder for rotatably supporting a sheet roll, a lamination unit for pulling and unwinding a front end of the sheet unwound from the sheet roll, a table on which the sheet unwound by the lamination parts is attached, and a tension unit for giving tension to the sheet attached on the table. Since the sheet cutting apparatus may cut the sheet consistently and stably, product quality and production efficiency should increase.

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a substrate including a first region and a second region, a first transistor and a second transistor formed on the first region and the second region, respectively, a first contact formed on the first transistor, and a second contact formed on the second transistor. The first contact includes a first work function control layer having a first thickness and a first conductive layer formed on the first work function control layer, the second contact includes a second work function control layer having a second thickness different from the first thickness and a second conductive layer formed on the second work function control layer, and the first contact and the second contact have different work functions.

Abstract: Provided are a semiconductor device including a high voltage transistor and a low voltage transistor and a method of manufacturing the same. The semiconductor device includes a semiconductor substrate including a high voltage region and a low voltage region; a high voltage transistor formed in the high voltage region and including a first active region, a first source/drain region, a first gate insulating layer, and a first gate electrode; and a low voltage transistor formed in the low voltage region and including a second active region, a second source/drain region, a second gate insulating layer, and a second gate electrode. The second source/drain region has a smaller thickness than a thickness of the first source/drain region.

Abstract: A display device includes: a display substrate; a display unit formed on the display substrate and a sealing substrate affixed to the display substrate by an adhering layer that surrounds the display unit. The sealing substrate includes a composite member including a resin and a plurality of carbon fibers and an insulating member attached to the composite member. The insulating member includes a through hole. A metal film is disposed at one side of the sealing substrate, facing the display substrate; and a conductive connection portion contact the metal film through the through hole.

Abstract: A fin field effect transistor (fin FET) is formed using a bulk silicon substrate and sufficiently guarantees a top channel length formed under a gate, by forming a recess having a predetermined depth in a fin active region and then by forming the gate in an upper part of the recess. A device isolation film is formed to define a non-active region and a fin active region in a predetermined region of the substrate. In a portion of the device isolation film a first recess is formed, and in a portion of the fin active region a second recess having a depth shallower than the first recess is formed. A gate insulation layer is formed within the second recess, and a gate is formed in an upper part of the second recess. A source/drain region is formed in the fin active region of both sides of a gate electrode.

Abstract: A thin film deposition apparatus used to produce large substrates on a mass scale and improve manufacturing yield. The thin film deposition apparatus includes a deposition source; a first nozzle disposed at a side of the deposition source and including a plurality of first slits arranged in a first direction; a second nozzle disposed opposite to the first nozzle and including a plurality of second slits arranged in the first direction; and a barrier wall assembly including a plurality of barrier walls arranged in the first direction so as to partition a space between the first nozzle and the second nozzle.

Abstract: A fin field effect transistor (fin FET) is formed using a bulk silicon substrate and sufficiently guarantees a top channel length formed under a gate, by forming a recess having a predetermined depth in a fin active region and then by forming the gate in an upper part of the recess. A device isolation film is formed to define a non-active region and a fin active region in a predetermined region of the substrate. In a portion of the device isolation film a first recess is formed, and in a portion of the fin active region a second recess having a depth shallower than the first recess is formed. A gate insulation layer is formed within the second recess, and a gate is formed in an upper part of the second recess. A source/drain region is formed in the fin active region of both sides of a gate electrode.

Abstract: A method of cleaning off organic deposition material accumulated on a mask includes forming an organic deposition material pattern on a substrate using the mask, which includes a plurality of slots, in a deposition chamber including a deposition source; transporting the mask to a stock chamber that is maintained at a vacuum and adjacent to the deposition chamber; and partially cleaning off the organic deposition material accumulated along the boundaries of the slots of the mask in the stock chamber. A system to clean off an organic deposition material accumulated on a mask having a plurality of slots, includes a deposition chamber including a deposition source; and a stock chamber that is maintained at substantially the same vacuum as the deposition chamber and includes a cleaning device that cleans off the organic deposition material accumulated on the mask.

Abstract: A deposition mask for forming an organic layer pattern of an organic light emitting diode (OLED) display includes a base member having a first surface facing a substrate of the OLED display, and a second surface facing a side opposite to the first surface, and including a plurality of openings passing through the first surface and the second surface for forming the organic layer pattern. The opening has a pair of first side walls and a pair of second side walls. Each side wall of the openings has an inclination surface inclined with respect to a thickness direction of the base member, and when measuring an inclination angle of the inclination surface with reference to the first surface of the base member, the inclination angle of the first side wall and the inclination angle of the second side wall are different from each other.

Abstract: Provided are field effect transistors and methods of fabricating the same. The transistor may include a substrate with an active pattern, the active pattern having a top surface and two sidewalls, a gate electrode proximal to the top surface and the sidewalls of the active pattern and crossing the active pattern, a gate spacer covering a sidewall of the gate electrode, a gate dielectric pattern at a bottom surface of the gate electrode, a source electrode on the active pattern at one side of the gate electrode, a drain electrode on the active pattern at another side of the gate electrode, and silicide patterns on surfaces of the source and drain electrodes, respectively. The gate dielectric pattern includes at least one high-k layer and the gate spacer has a dielectric constant that is smaller than that of the gate dielectric pattern.

Abstract: A thin film deposition apparatus used to produce large substrates on a mass scale and improve manufacturing yield. The thin film deposition apparatus includes a deposition source; a first nozzle disposed at a side of the deposition source and including a plurality of first slits arranged in a first direction; a second nozzle disposed opposite to the first nozzle and including a plurality of second slits arranged in the first direction; and a barrier wall assembly including a plurality of barrier walls arranged in the first direction so as to partition a space between the first nozzle and the second nozzle.

Abstract: A fin field effect transistor (fin FET) is formed using a bulk silicon substrate and sufficiently guarantees a top channel length formed under a gate, by forming a recess having a predetermined depth in a fin active region and then by forming the gate in an upper part of the recess. A device isolation film is formed to define a non-active region and a fin active region in a predetermined region of the substrate. In a portion of the device isolation film a first recess is formed, and in a portion of the fin active region a second recess having a depth shallower than the first recess is formed. A gate insulation layer is formed within the second recess, and a gate is formed in an upper part of the second recess. A source/drain region is formed in the fin active region of both sides of a gate electrode.

Abstract: A display device includes a substrate, a display unit formed on the substrate, a sealing substrate bonded to the substrate by a bonding layer surrounding the display unit, the sealing substrate comprising a complex member and an insulating member, wherein the complex member has a resin matrix and a plurality of carbon fibers and the insulator is connected to an edge of the complex member and comprises a penetration hole, a metal layer disposed at one side of the sealing substrate wherein the one side faces the substrate, and a conductive connection unit filling in the penetration hole and contacting the metal layer. The complex member and the insulator may be coupled by tongue and groovecoupling along a thickness direction of the sealing substrate where the protrusion-groove coupling structure is top-to-bottom symmetric and the insulator may have a thickness identical to that of the complex member.