Patents by Inventor Choong-Ho Lee

Choong-Ho Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9953828
    Abstract: A frame and a mask assembly having the same. The frame supports both ends of each unit mask, each unit mask applying a tensile force in a first direction. The frame includes a frame main body part forming an opening exposing the unit mask, and a first through hole formed by passing through the frame main body part.
    Type: Grant
    Filed: June 14, 2013
    Date of Patent: April 24, 2018
    Assignee: Samsung Display Co., Ltd.
    Inventors: Yoon-Chan Oh, Choong-Ho Lee, Da-Hee Jeong
  • Patent number: 9893190
    Abstract: A fin field effect transistor (fin FET) is formed using a bulk silicon substrate and sufficiently guarantees a top channel length formed under a gate, by forming a recess having a predetermined depth in a fin active region and then by forming the gate in an upper part of the recess. A device isolation film is formed to define a non-active region and a fin active region in a predetermined region of the substrate. In a portion of the device isolation film a first recess is formed, and in a portion of the fin active region a second recess having a depth shallower than the first recess is formed. A gate insulation layer is formed within the second recess, and a gate is formed in an upper part of the second recess. A source/drain region is formed in the fin active region of both sides of a gate electrode.
    Type: Grant
    Filed: April 24, 2017
    Date of Patent: February 13, 2018
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Keun-Nam Kim, Hung-Mo Yang, Choong-Ho Lee
  • Patent number: 9873937
    Abstract: A thin film deposition apparatus used to produce large substrates on a mass scale and improve manufacturing yield. The thin film deposition apparatus includes a deposition source; a first nozzle disposed at a side of the deposition source and including a plurality of first slits arranged in a first direction; a second nozzle disposed opposite to the first nozzle and including a plurality of second slits arranged in the first direction; and a barrier wall assembly including a plurality of barrier walls arranged in the first direction so as to partition a space between the first nozzle and the second nozzle.
    Type: Grant
    Filed: August 27, 2015
    Date of Patent: January 23, 2018
    Assignee: Samsung Display Co., Ltd.
    Inventors: Choong-Ho Lee, Jung-Min Lee
  • Patent number: 9782861
    Abstract: A metal sheet holding device for manufacturing a pattern mask used in manufacturing processes of a flat panel displays include a first holder and second holder. The first holder includes an adhesive layer contacting edge portions of a metal sheet, and a first frame supporting the metal sheet using the adhesive layer. The second holder includes a second frame below the first frame, a supported plate positioned at the center of the second frame, and an adhered unit positioned between the central portion of a metal sheet and the supported plate. The adhered unit generates an electrostatic force or a magnetic force to hold the central portion of the metal sheet.
    Type: Grant
    Filed: October 1, 2013
    Date of Patent: October 10, 2017
    Assignee: Samsung Display Co., Ltd.
    Inventors: Choong-Ho Lee, Sung-Sik Yun, Tong-Jin Park, Doh-Hyoung Lee
  • Publication number: 20170229581
    Abstract: A fin field effect transistor (fin FET) is formed using a bulk silicon substrate and sufficiently guarantees a top channel length formed under a gate, by forming a recess having a predetermined depth in a fin active region and then by forming the gate in an upper part of the recess. A device isolation film is formed to define a non-active region and a fin active region in a predetermined region of the substrate. In a portion of the device isolation film a first recess is formed, and in a portion of the fin active region a second recess having a depth shallower than the first recess is formed. A gate insulation layer is formed within the second recess, and a gate is formed in an upper part of the second recess. A source/drain region is formed in the fin active region of both sides of a gate electrode.
    Type: Application
    Filed: April 24, 2017
    Publication date: August 10, 2017
    Inventors: Keun-Nam Kim, Hung-Mo YANG, Choong-Ho LEE
  • Patent number: 9660191
    Abstract: A thin film deposition apparatus including a deposition source having a crucible to contain a deposition material and a heater to heat and vaporize the deposition material; a nozzle unit disposed at a side of the deposition source along a first direction and having a plurality of nozzle slits to discharge the deposition material that was vaporized; a plurality of emission coefficient increasing units disposed toward the nozzle unit within the deposition source and increasing a quantity of motion of the deposition material that is discharged toward the nozzle unit; a patterning slit sheet disposed opposite to the nozzle unit and having a plurality of patterning slits arranged along the first direction; and a barrier plate assembly disposed between the nozzle unit and the patterning slit sheet along the first direction, and having a plurality of barrier plates that partition a space between the nozzle unit and the patterning slit sheet into a plurality of sub-deposition spaces.
    Type: Grant
    Filed: February 9, 2015
    Date of Patent: May 23, 2017
    Assignee: Samsung Display Co., Ltd.
    Inventors: Choong-Ho Lee, Jung-Min Lee, Jun-Sik Oh
  • Patent number: 9656291
    Abstract: Disclosed is a method of manufacturing a metal mask. A method of manufacturing a metal mask in accordance with an exemplary embodiment of the present invention includes forming through holes in a plate using a laser, by scanning the laser onto sequentially smaller overlapping portions of the plate.
    Type: Grant
    Filed: September 4, 2014
    Date of Patent: May 23, 2017
    Assignee: Samsung Display Co., Ltd.
    Inventors: Choong Ho Lee, Tong-Jin Park, Doh-Hyoung Lee, Sung Sik Yun, Da Hee Jeong, Jun Ho Jo
  • Patent number: 9643280
    Abstract: A laser processing apparatus includes: a laser generator that generates a laser beam, a diffractive optical element that divides the laser beam generated by the laser generator into a plurality of sub-laser beams, and a beam gap adjustor that adjusts a gap between neighboring ones of the plurality of sub-laser beams. Therefore, by installing a diffractive optical element that divides a laser beam that is generated by the laser generator into the plurality of sub-laser beams and a beam gap adjustor to adjust a gap between a plurality of sub-laser beams, the laser processing apparatus can form a processing pattern of various resolutions in a shadow mask while improving a processing speed of the shadow mask.
    Type: Grant
    Filed: November 20, 2013
    Date of Patent: May 9, 2017
    Assignees: Samsung Display Co., Ltd., FRAUNHOFER-GESELLSCHAFT ZUR FORDERUNG DER ANGEWANDTEN FORSCHUNG E.V.
    Inventors: Doh-Hyoung Lee, Choong-Ho Lee, Sung-Sik Yun, Tong-Jin Park, Arnold Gillner, Nelli Hambach, Stephan Eifel, Jens Holtkamp, Lasse Büsing, Alexander Gatej
  • Patent number: 9640665
    Abstract: A fin field effect transistor (fin FET) is formed using a bulk silicon substrate and sufficiently guarantees a top channel length formed under a gate, by forming a recess having a predetermined depth in a fin active region and then by forming the gate in an upper part of the recess. A device isolation film is formed to define a non-active region and a fin active region in a predetermined region of the substrate. In a portion of the device isolation film a first recess is formed, and in a portion of the fin active region a second recess having a depth shallower than the first recess is formed. A gate insulation layer is formed within the second recess, and a gate is formed in an upper part of the second recess. A source/drain region is formed in the fin active region of both sides of a gate electrode.
    Type: Grant
    Filed: November 3, 2015
    Date of Patent: May 2, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Keun-Nam Kim, Hung-Mo Yang, Choong-Ho Lee
  • Patent number: 9604314
    Abstract: A method of forming a pattern on a mask sheet using a laser beam includes determining a target scan line with respect to the mask sheet, which corresponds to a position of the pattern on a final mask sheet, determining a correction scan line with respect to the mask sheet, along which the laser beam is scanned to form the pattern of the final mask sheet, applying a counter force to the mask sheet, fixing the mask sheet onto a mask frame while the counter force is applied to the mask sheet, scanning the laser beam along the correction scan line, and releasing the counter force which is applied to the mask sheet.
    Type: Grant
    Filed: May 30, 2014
    Date of Patent: March 28, 2017
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Yoon-Chan Oh, Choong-Ho Lee
  • Patent number: 9593408
    Abstract: A thin film deposition apparatus includes a deposition source that is disposed opposite to a substrate and holds a deposition material that is vaporized; a first nozzle unit disposed between the substrate and the deposition source and having first slit units arranged in a first direction of the substrate; a second nozzle unit disposed between the first nozzle unit and the substrate and having second slit units arranged in the first direction of the substrate; and at least one barrier member assembly disposed between the first nozzle unit and the second nozzle unit and partitioning the space between the first nozzle unit and the second nozzle unit. A deposition blade is optionally disposed in any space formed between the first nozzle unit and the second nozzle unit during a stand-by mode to prevent the deposition of the deposition material from being deposited onto undesirable regions of the chamber.
    Type: Grant
    Filed: June 15, 2010
    Date of Patent: March 14, 2017
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jung-Min Lee, Choong-Ho Lee
  • Patent number: 9592570
    Abstract: A laser processing apparatus includes a laser generator for generating laser beams, a diffraction optic element for dividing the laser beam generated by the laser generator into a plurality of sub-laser beams, and a beam number controller for controlling the number of the plurality of sub-laser beams. Accordingly, the diffractive optic element that splits a laser beam generated by the laser beam generator into a plurality of sub-laser beams and the beam number controller that controls the number of sub-laser beams are provided so that the processing speed of a processing target can be improved and, at the same time, the number of laser beams can be promptly controlled, thereby promptly forming various patterns of the processing target.
    Type: Grant
    Filed: June 17, 2013
    Date of Patent: March 14, 2017
    Assignees: Samsung Display Co., Ltd., FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.
    Inventors: Doh-Hyoung Lee, Choong-Ho Lee, Sung-Sik Yun, Tong-Jin Park, Arnold Gillner, Nelli Hambach, Stephan Eifel, Jens Holtkamp, Lasse Büsing, Alexander Gatej
  • Patent number: 9577212
    Abstract: A display device includes a substrate, a display unit formed on the substrate, a sealing substrate bonded to the substrate by a bonding layer surrounding the display unit, the sealing substrate comprising a complex member and an insulating member, wherein the complex member has a resin matrix and a plurality of carbon fibers and the insulator is connected to an edge of the complex member and comprises a penetration hole, a metal layer disposed at one side of the sealing substrate wherein the one side faces the substrate, and a conductive connection unit filling in the penetration hole and contacting the metal layer. The complex member and the insulator may be coupled by tongue and groove coupling along a thickness direction of the sealing substrate where the protrusion-groove coupling structure is top-to-bottom symmetric and the insulator may have a thickness identical to that of the complex member.
    Type: Grant
    Filed: April 16, 2015
    Date of Patent: February 21, 2017
    Assignee: Samsung Display Co., Ltd.
    Inventors: Jung-Min Lee, Choong-Ho Lee, Kie Hyun Nam
  • Patent number: 9536825
    Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a substrate including a first region and a second region, a first transistor and a second transistor formed on the first region and the second region, respectively, a first contact formed on the first transistor, and a second contact formed on the second transistor. The first contact includes a first work function control layer having a first thickness and a first conductive layer formed on the first work function control layer, the second contact includes a second work function control layer having a second thickness different from the first thickness and a second conductive layer formed on the second work function control layer, and the first contact and the second contact have different work functions.
    Type: Grant
    Filed: May 14, 2015
    Date of Patent: January 3, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jung-Gun You, Wei-Hua Hsu, Choong-Ho Lee, Hyung-Jong Lee
  • Patent number: 9452493
    Abstract: A laser processing apparatus includes a laser generator for generating laser beams, a diffraction optic element for dividing the laser beam generated by the laser generator into a plurality of sub-laser beams, and a beam number controller for controlling the number of the plurality of sub-laser beams. Accordingly, the diffractive optic element that splits a laser beam generated by the laser beam generator into a plurality of sub-laser beams and the beam number controller that controls the number of sub-laser beams are provided so that the processing speed of a processing target can be improved and, at the same time, the number of laser beams can be promptly controlled, thereby promptly forming various patterns of the processing target.
    Type: Grant
    Filed: June 17, 2013
    Date of Patent: September 27, 2016
    Assignees: Samsung Display Co., Ltd., FRAUNHOFER-GESELLSCHAFT ZUR FÖRDERUNG DER ANGEWANDTEN FORSCHUNG E.V.
    Inventors: Doh-Hyoung Lee, Choong-Ho Lee, Sung-Sik Yun, Tong-Jin Park
  • Patent number: 9399305
    Abstract: A sheet cutting apparatus and a sheet cutting method using the same are disclosed. In one aspect, the sheet cutting apparatus includes a holder for rotatably supporting a sheet roll, a lamination unit for pulling and unwinding a front end of the sheet unwound from the sheet roll, a table on which the sheet unwound by the lamination parts is attached, and a tension unit for giving tension to the sheet attached on the table. Since the sheet cutting apparatus may cut the sheet consistently and stably, product quality and production efficiency should increase.
    Type: Grant
    Filed: August 27, 2013
    Date of Patent: July 26, 2016
    Assignee: Samsung Display Co., Ltd.
    Inventors: Sung-Sik Yun, Choong-Ho Lee, Tong-Jin Park, Doh-Hyoung Lee
  • Publication number: 20160141243
    Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a substrate including a first region and a second region, a first transistor and a second transistor formed on the first region and the second region, respectively, a first contact formed on the first transistor, and a second contact formed on the second transistor. The first contact includes a first work function control layer having a first thickness and a first conductive layer formed on the first work function control layer, the second contact includes a second work function control layer having a second thickness different from the first thickness and a second conductive layer formed on the second work function control layer, and the first contact and the second contact have different work functions.
    Type: Application
    Filed: May 14, 2015
    Publication date: May 19, 2016
    Inventors: Jung-Gun YOU, Wei-Hua HSU, Choong-Ho LEE, Hyung-Jong LEE
  • Patent number: 9330981
    Abstract: Provided are a semiconductor device including a high voltage transistor and a low voltage transistor and a method of manufacturing the same. The semiconductor device includes a semiconductor substrate including a high voltage region and a low voltage region; a high voltage transistor formed in the high voltage region and including a first active region, a first source/drain region, a first gate insulating layer, and a first gate electrode; and a low voltage transistor formed in the low voltage region and including a second active region, a second source/drain region, a second gate insulating layer, and a second gate electrode. The second source/drain region has a smaller thickness than a thickness of the first source/drain region.
    Type: Grant
    Filed: August 14, 2014
    Date of Patent: May 3, 2016
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Shigenobu Maeda, Hyun-pil Noh, Choong-ho Lee, Seog-heon Ham
  • Patent number: 9281494
    Abstract: A display device includes: a display substrate; a display unit formed on the display substrate and a sealing substrate affixed to the display substrate by an adhering layer that surrounds the display unit. The sealing substrate includes a composite member including a resin and a plurality of carbon fibers and an insulating member attached to the composite member. The insulating member includes a through hole. A metal film is disposed at one side of the sealing substrate, facing the display substrate; and a conductive connection portion contact the metal film through the through hole.
    Type: Grant
    Filed: April 11, 2011
    Date of Patent: March 8, 2016
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Choong-Ho Lee, Kie Hyun Nam, Jung-Min Lee
  • Publication number: 20160056296
    Abstract: A fin field effect transistor (fin FET) is formed using a bulk silicon substrate and sufficiently guarantees a top channel length formed under a gate, by forming a recess having a predetermined depth in a fin active region and then by forming the gate in an upper part of the recess. A device isolation film is formed to define a non-active region and a fin active region in a predetermined region of the substrate. In a portion of the device isolation film a first recess is formed, and in a portion of the fin active region a second recess having a depth shallower than the first recess is formed. A gate insulation layer is formed within the second recess, and a gate is formed in an upper part of the second recess. A source/drain region is formed in the fin active region of both sides of a gate electrode.
    Type: Application
    Filed: November 3, 2015
    Publication date: February 25, 2016
    Inventors: Keun-Nam Kim, Hung-Mo YANG, Choong-Ho LEE