Abstract: An air compressor contains a piston actuated by a motor to move in a cylinder. The piston includes an air stop sheet mounted on a top support plate thereof. The air stop sheet includes a bending section having a positioning zone and an acting zone located opposite to the positioning zone and configured to cover an air channel of the piston. The bending section is a boundary axis of the acting area and the positioning zone of the air stop sheet so that a top of the air stop sheet facing the cylinder forms an obtuse angle less than 180 degrees, and a back surface of the acting zone of the air stop sheet backing a top of the cylinder turns on relative to a plane of a top of the top support plate at an open angle ?, thus producing an air flowing space.

Abstract: A system and method for efficiently reducing the latency of load operations. In various embodiments, logic of a processor accesses a prediction table after fetching instructions. For a prediction table hit, the logic executes a load instruction with a retrieved predicted address from the prediction table. For a prediction table miss, when the logic determines the address of the load instruction and hits in a learning table, the logic updates a level of confidence indication to indicate a higher level of confidence when a stored address matches the determined address. When the logic determines the level of confidence indication stored in a given table entry of the learning table meets a threshold, the logic allocates, in the prediction table, information stored in the given entry. Therefore, the predicted address is available during the next lookup of the prediction table.

Abstract: A method includes rotating a wafer, dispensing a liquid from a center of the wafer to a peripheral edge of the wafer to control a temperature of the wafer, and etching an etch layer of the wafer with an etchant during or after dispensing the liquid. The liquid is dispensed through a nozzle.

Abstract: A memory structure includes a first pull-up (PU) transistor and a first pull-down (PD) transistor sharing a first gate structure extending in a first direction, and a second PU transistor and a second PD transistor sharing a second gate structure extending in the first direction. The first gate structure has a first PU portion that corresponds with the first PU transistor and a first PD portion that corresponds with the first PD transistor. The second gate structure has a second PU portion that corresponds with the second PU transistor and a second PD portion that corresponds with the second PD transistor. The first and second PU portion each has a first dimension in a second direction perpendicular to the first direction, and the first and second PD portion each has a second dimension in the second direction. The first dimension is greater than the second dimension.

Abstract: A lamp and epitaxial processing apparatus are described herein. In one example, the lamp includes a bulb, a filament, and a plurality of filament supports disposed in spaced-apart relation to the filament, each of the filament supports having a hook support and a hook. The hook includes a connector configured to fasten the hook to the hook support, a first vertical portion extending from the connector toward the filament, and a rounded portion extending from an end of the first vertical portion distal from the connector and configured to wrap around the filament. A second vertical portion extends from an end of the rounded portion distal from the first vertical portion and the second vertical portion has a length between 60% and 100% of the length of the first vertical portion.

Abstract: A semiconductor cell structure includes a first complementary metal oxide silicon (CMOS) a second CMOS, a first conducting element, and a second conducting element. The first and second CMOSs are disposed on the substrate and a reference voltage is provided to the first CMOS and the second CMOS respectively through the first conducting element and the second conducting element. A product of a width of the first conducting element multiplied by a channel length of the first CMOS is positively related to a product of a width of the second conducting element multiplied by a channel length of the second CMOS.

Abstract: An aided design method for female underwear includes the following steps. The first is to receive at least one image associated with a profile of a female body. Then is to obtain a plurality of dynamic body parameters associated with the female body according to the at least one image. Then is to compare these dynamic body parameters with a content of a dynamic model database. Final is to generate an aided design parameter according to the comparison result, wherein the aided design parameter is a setting position, setting direction, shape, length, width, thickness, tensile strength, and combination thereof associated with at least one elastic support component on a female underwear.

Abstract: Various embodiments of the present application are directed towards a method for forming a semiconductor-on-insulator (SOI) substrate with a thick device layer and a thick insulator layer. In some embodiments, the method includes forming an insulator layer covering a handle substrate, and epitaxially forming a device layer on a sacrificial substrate. The sacrificial substrate is bonded to a handle substrate, such that the device layer and the insulator layer are between the sacrificial and handle substrates, and the sacrificial substrate is removed. The removal includes performing an etch into the sacrificial substrate until the device layer is reached. Because the device layer is formed by epitaxy and transferred to the handle substrate, the device layer may be formed with a large thickness. Further, because the epitaxy is not affected by the thickness of the insulator layer, the insulator layer may be formed with a large thickness.

Abstract: A method of operating a memory circuit includes generating a first current in response to a first voltage. The first current includes a first set of leakage currents and a first write current. The method further includes generating, by a tracking circuit, a second set of leakage currents configured to track the first set of leakage currents of the first column of memory cells, and mirroring the first current in a first path with a second current in a second path by a first current mirror. The second current includes the second set of leakage currents and a second write current. The first write current corresponds to the second write current. The first set of leakage currents corresponds to the second set of leakage currents.

Abstract: The present invention provides use of a compound represented by formula (1), and the use is manufacturing a medicine for treating or preventing ischemic optic neuropathy, wherein the formula (1) is as below:

Abstract: A method includes following steps. First transistors are formed over a substrate. An interconnect structure is formed over the plurality of first transistors. A dielectric layer is formed over the interconnect structure. 2D semiconductor seeds are formed over the dielectric layer. The 2D semiconductor seeds are annealed. An epitaxy process is performed to laterally grow a plurality of 2D semiconductor films respectively from the plurality of 2D semiconductor seeds. Second transistors are formed on the plurality of 2D semiconductor films.

Abstract: A method for forming a memory device is provided. The method including forming a memory cell stack over a substrate. The memory cell stack includes a bottom metal layer, a top metal layer, and a data storage layer disposed between the bottom metal layer and the top metal layer. The memory cell stack is patterned such that sidewalls of the data storage layer, sidewalls of the top metal layer, and sidewalls of the bottom metal layer are substantially aligned and are slanted at a non-zero angle. A top electrode is formed over the top metal layer.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a gate dielectric structure over a substrate. A metal layer overlies the gate dielectric structure. A conductive layer overlies the metal layer. A polysilicon layer contacts opposing sides of the conductive layer. A bottom surface of the polysilicon layer is aligned with a bottom surface of the conductive layer. A dielectric layer overlies the polysilicon layer. The dielectric layer continuously extends from sidewalls of the polysilicon layer to an upper surface of the conductive layer.

Abstract: A p-GaN high-electron-mobility transistor, includes a substrate, a channel layer stacked on the substrate, a supply layer stacked on the channel layer, a first doped layer stacked on the supply layer, a second doped layer stacked on the first doped layer, and a third doped layer stacked on the second doped layer. A doping concentration of the first doped layer and the doping concentration of the third doped layer are lower than a doping concentration of the second doped layer. A gate is located on the third doped layer, and a source and a drain are electrically connected to the channel layer and the supply layer, respectively.

Abstract: An information handling system stylus transmits a wireless signal at a writing tip to enhance touch detection of the writing tip by a touchscreen display and receives wireless signals from the touchscreen display at a receiving antenna. To enhance control of wireless energy distributed at the writing tip, the receiving antenna is selectively coupled to the writing tip, such as by transitioning from a float of the receiving antenna to an interface with the stylus power source at transmit by the writing tip. Charge at the receiving antenna helps to shape the energy distribution from the writing tip, such as to match the energy distribution of other styluses in use at the touchscreen display.

Abstract: Trench isolation connectors are disclosed herein for stacked semiconductor structures, and particularly, for stacked semiconductor structures having high voltage devices. An exemplary stacked device arrangement includes a first device substrate having a first device and a second device substrate having a second device. An isolation structure disposed in the second device substrate surrounds the second device. The isolation structure extends through the second device substrate from a first surface of the second device substrate to a second surface of the second device substrate. A conductive connector is disposed in the isolation structure. The conductive connector is connected to the second device and the first device. The conductive connector extends from the first surface of the second device substrate to the second surface of the second device substrate. The first device and the second device may be a first high voltage device and a second high voltage device, respectively.

Abstract: An electronic device is disclosed. The electronic device includes a circuit structure. The circuit structure includes a metal member and an insulating layer. The insulating layer surrounds the metal member and includes at least one recess. The metal member corresponds to the recess, the recess exposes a surface of the metal member, and a width of the recess is greater than a width of the metal member in a cross-sectional view of the metal member and the insulating layer.

Abstract: A semiconductor device includes a buried metal line disposed in a semiconductor substrate, a first dielectric material on a first sidewall of the buried metal line and a second dielectric material on a second sidewall of the buried metal line, a first multiple fins disposed proximate the first sidewall of the buried metal line, a second multiple fins disposed proximate the second sidewall of the buried metal line, a first metal gate structure over the first multiple fins and over the buried metal line, wherein the first metal gate structure extends through the first dielectric material to contact the buried metal line, and a second metal gate structure over the second multiple fins and over the buried metal line.

Abstract: The present disclosure is directed to a transfer blade including a first end segment, a second end segment opposite to the first end segment, and an intermediate segment extending from the first end segment to the second end segment. The first end segment includes a first contact region and the second end segment includes a second contact region. The first and second contact regions are configured to contact locations of a surface of a workpiece that do not overlap or are not aligned with a sensitive area of the workpiece. The sensitive area of the workpiece may be an EUV frame or a reticle of the workpiece. A non-contact region extends continuously along the first end segment, the intermediate segment, and the second end segment, and the non-contact region overlaps the sensitive area of the workpiece and is spaced apart from the sensitive area of the workpiece.

Abstract: The present disclosure provides a semiconductor structure with a single side capacitor. The semiconductor structure includes a substrate having a first landing pad therein, and a first capacitor disposed over the substrate. The first capacitor includes: a first electrode, disposed over and extending vertically away from the first landing pad; a first dielectric layer, at least partially surrounding the first electrode, wherein the first electrode is shorter than the first dielectric layer; and a second electrode, surrounding the first dielectric layer and the first electrode.