Abstract: A method for forming a high electron mobility transistor (HEMT) includes forming a buffer layer on a transparent substrate. The method further includes forming a barrier layer on the buffer layer. A channel region is formed in the buffer layer adjacent to the interface between the buffer layer and the barrier layer. The method further includes forming a dielectric layer on the barrier layer. The method further includes forming source/drain electrodes through the dielectric layer and the barrier layer and disposed on the buffer layer. The method further includes forming a shielding layer conformally covering the dielectric layer and the source/drain electrodes. The method further includes performing a thermal process on the source/drain electrodes.

Abstract: Described are methods, systems, devices for facilitation of intraluminal medical procedures within the neurovasculature. A catheter advancement device includes a flexible elongate body having a proximal end, a distal end, and a single lumen extending therebetween. The flexible elongate body has a proximal segment, an intermediate segment, and a tip segment. The proximal segment includes a hypotube coated with a polymer. The intermediate segment includes an unreinforced polymer having a durometer of no more than 72 D. The tip segment is formed of a polymer different from the intermediate segment and has a durometer of no more than about 35 D and a length of at least 5 cm. The tip segment has a tapered portion that tapers distally from a first outer diameter to a second outer diameter over a length of between 1 and 3 cm.

Abstract: A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, a top electrode layer on the magnetic tunnel junction stack, and a hard mask layer on said top electrode layer, wherein the material of top electrode layer is titanium nitride, a material of said hard mask layer is tantalum or tantalum nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.

Abstract: A material dispensing device for dispensing liquid material whose viscosity is higher than water, and a related material output volume detecting device and a related damper device are disclosed. The material output volume detecting device includes: a damper device arranged to operably buffer liquid material flowing therethrough; and a flowmeter arranged to operably measure the flow of liquid material outputted from the damper device. The damper device includes: a damper base having a material buffer chamber; a diaphragm covered on the material buffer chamber; a fastening element positioned on the diaphragm and having a hollow portion; and a restriction element, positioned on the fastening element, and arranged to operably restrain a degree of deformation of the diaphragm.

Abstract: A semiconductor device includes a buried metal line disposed in a semiconductor substrate, a first dielectric material on a first sidewall of the buried metal line and a second dielectric material on a second sidewall of the buried metal line, a first multiple fins disposed proximate the first sidewall of the buried metal line, a second multiple fins disposed proximate the second sidewall of the buried metal line, a first metal gate structure over the first multiple fins and over the buried metal line, wherein the first metal gate structure extends through the first dielectric material to contact the buried metal line, and a second metal gate structure over the second multiple fins and over the buried metal line.

Abstract: Some implementations described herein provide a nanostructure transistor including inner spacers between a gate structure and a source/drain region. The inner spacers, formed in cavities at end regions of sacrificial nanosheets during fabrication of the nanostructure transistor, include concave-regions that face the source/drain region. Formation techniques include forming the sacrificial nanosheets and inner spacers to include certain geometric and/or dimensional properties, such that a likelihood of defects and/or voids within the inner spacers and/or the gate structure are reduced.

Abstract: Methods and devices are provided herein for enhancing robustness of a bipolar electrostatic discharge (ESD) device. The robustness of a bipolar ESD device includes providing an emitter region and a collector region adjacent to the emitter region. An isolation structure is provided between the emitter region and the collector region. A ballasting characteristic at the isolation structure is modified by inserting at least one partition structure therein. Each partition structure extends substantially abreast at least one of the emitter and the collector regions.

Abstract: An optical keyswitch includes a keycap, a support mechanism, and a switch module. The support mechanism is disposed below the keycap and configured to support the keycap moving upward and downward, the support mechanism comprising a first frame and a second frame, the first frame having a sliding end. The switch module includes a circuit board, an emitter, and a receiver, the emitter and the receiver are electrically connected to the circuit board, and the emitter emitting an optical signal to the receiver. When the keycap is pressed, the first frame is driven by the keycap to slide substantially parallel to the circuit board and block the optical signal with the sliding end, so the switch module is triggered to generate a triggering signal.

Abstract: A semiconductor structure includes: a semiconductor substrate arranged over a back end of line (BEOL) metallization stack, and including a scribe line opening; a conductive pad having an upper surface that is substantially flush with an upper surface of the semiconductor substrate, the conductive pad including an upper conductive region and a lower conductive region, the upper conductive region being confined to the scribe line opening substantially from the upper surface of the semiconductor substrate to a bottom of the scribe line opening, and the lower conductive region protruding downward from the upper conductive region, through the BEOL metallization stack; a passivation layer arranged over the semiconductor substrate; and an array of pixel sensors arranged in the semiconductor substrate adjacent to the conductive pad.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes one or more semiconductor layers, an interfacial layer surrounding at least one semiconductor layer of the one or more semiconductor layers, a work function metal disposed over the interfacial layer, and a high-K (HK) dielectric layer disposed between the interfacial layer and the work function metal. The HK dielectric layer includes a first dopant region adjacent to a first interface of the HK dielectric layer and the interfacial layer, wherein the first dopant region comprises first dopants having a first polarity. The HK dielectric layer also includes a second dopant region adjacent to a second interface of the HK dielectric layer and the work function metal, wherein the second dopant region comprises second dopants having a second polarity opposite the first polarity.

Abstract: An integrated circuit includes a ramp signal generator circuit, a comparator, a counter and a control circuit. The ramp signal generator circuit is configured to generate a ramp reference signal. The comparator configured to compare a pixel output signal and the ramp reference signal thereby generating a comparator output signal. The counter is coupled to the comparator, and configured to be enabled or disabled in response to the comparator output signal. The control circuit coupled to the comparator, and configured to enable or disable the comparator by a first enable signal, the first enable signal generated in response to at least the comparator output signal.

Abstract: A wearable device with heart rate detection includes a heart rate detection assembly and a processor. The heart rate detection assembly is configured to obtain a plurality of dynamic heart rate signals according to a default frequency. The processor includes a finite state machine and a storage. The storage is configured to store the plurality of dynamic heart rate signals, and the finite state machine determines a heart rate state according to a sampling parameter and the plurality of dynamic heart rate signals. The processor obtains a weight according to the heart rate state, and obtains a dynamic heart rate value according to the weight.

Abstract: An air purification equipment and an air purification method are provided, including a housing, a purification device, a guiding assembly, and an air driving device. The housing defines an air inlet and an air outlet, the air inlet imports air into the housing, the air outlet exports air out of the housing. The purification device purifies the air in the housing. The guiding assembly guides the air from the air inlet to the purification device. The air driving device drives the air from the air inlet to the purification device, and drives the air to the air outlet. The guiding assembly forms a first channel and a second channel, the first channel is corresponding to the air inlet, the first channel guides the air to flow into the second channel, at least a part of the purification device is positioned in the second channel.

Abstract: An image sensor includes a photosensitive sensor, a floating diffusion node, a reset transistor, and a source follower transistor. The reset transistor comprises a first source/drain coupled to the floating diffusion node and a second source/drain coupled to a first voltage source. The source follower transistor comprises a gate coupled to the floating diffusion node and a first source/drain coupled to the second source/drain of the reset transistor. A first elongated contact contacts the second source/drain of the reset transistor and the first source/drain of the source follower transistor. The first elongated contact has a first dimension in a horizontal cross-section and a second dimension in the horizontal cross-section. The second dimension is perpendicular to the first dimension, and the second dimension is less than the first dimension.

Abstract: An electrical connection plug includes an insulating base, a metal housing, and a fitting portion. The left and right sides of the metal housing are shaped to have semi-circular arc structures. The upper and lower surface and the left and right sides of the metal housing that perpendicularly correspond the fitting space are formed to have hole-free structures. The height of the two contact interface substrates is smaller than the height 0.9 mm of a fitting interface substrate of a biased electrical connection plug having the minimum height specification specified by USB Association and larger than 0.28 mm. The height of the two contact interface substrates enables the two contact interface substrates to tightly fit the two spaces.

Abstract: A lenticular display may be formed with convex curvature. The lenticular display may have a lenticular lens film with lenticular lenses that extend across the length of the display. The lenticular lenses may be configured to enable stereoscopic viewing of the display. To enable more curvature in the display while ensuring satisfactory stereoscopic display performance, the display may have stereoscopic zones and non-stereoscopic zones. A central stereoscopic zone may be interposed between first and second non-stereoscopic zones. The non-stereoscopic zones may have more curvature than the stereoscopic zone. To prevent crosstalk within the lenticular display, a louver film may be incorporated into the display. The pixel array may have a diagonal layout and may be covered by vertically oriented lenticular lenses.

Abstract: A retrofitting method for a beam with an opening is disclosed. The retrofitting method provides a hoop cooperated with an inclined stirrup to form a reinforcement set. The hoop is used to enclose the opening; and the reinforcement set may be selectively adjusted according to the distance between the edge of opening and a column face. The retrofitting method and reinforcement set are not only suitable for openings located in the non-plastic hinge zone of the beam, but also suitable for the openings located in the plastic hinge zone.

Abstract: An imaging lens system has an optical axis and an image surface through which the optical axis passes. The imaging lens system includes a plastic lens barrel surrounding the optical axis. The plastic lens barrel includes an image-side portion and an object-side aperture through which the optical axis passes, and the image-side portion is located between the image surface and the object-side aperture. The image-side portion includes a protrusive structure surrounding the optical axis and extending towards the image surface. The protrusive structure has an inner surface facing the optical axis, an outer surface disposed opposite to the inner surface and located farther away from the optical axis than the inner surface and a reflection-reducing surface extending towards the image surface and connected to and located between the inner surface and the outer surface. The protrusive structure includes a reflection-reducing structure disposed on the reflection-reducing surface.

Abstract: An imaging lens assembly module includes an imaging lens assembly, a light path folding element, a first lens barrel, a second lens barrel, a base and a plurality of rolling bearings. The imaging lens assembly includes a plurality of plastic lens elements, and defines a first optical axis passing through the plastic lens elements. The first lens barrel contains one or more of the plastic lens elements. The second lens barrel contains another one or more of the plastic lens elements. The base includes a guiding groove structure, and the guiding groove structure extends continuously along a direction parallel to the first optical axis. The rolling bearings interposed between the first lens barrel and the base and the rolling bearings interposed between the second lens barrel and the base are interposed in the guiding groove structure.

Abstract: A mixed reality system that includes a device and a base station that communicate via a wireless connection The device may include sensors that collect information about the user’s environment and about the user. The information collected by the sensors may be transmitted to the base station via the wireless connection. The base station renders frames or slices based at least in part on the sensor information received from the device, encodes the frames or slices, and transmits the compressed frames or slices to the device for decoding and display. The base station may provide more computing power than conventional stand-alone systems, and the wireless connection does not tether the device to the base station as in conventional tethered systems. The system may implement methods and apparatus to maintain a target frame rate through the wireless link and to minimize latency in frame rendering, transmittal, and display.