Abstract: An operation method of a buffer chip may include receiving first control signals for setting a first memory chip; buffering the first control signals and transmitting the buffered signals to the first memory chip; storing a setting value of the first memory chip in response to the first control signals; receiving second control signals for setting a second memory chip; buffering the second control signals and transmitting the buffered second control signals to the second memory chip; storing a setting value of the second memory chip in response to the second control signals; receiving third control signals for applying the setting value of the first memory chip; buffering the third control signals and transmitting the buffered third control signals to the first memory chip; and applying the stored setting value of the first memory chip as a setting value of a buffer chip in response to the third control signals.

Abstract: An electronic system includes a control system configured to transmit an encrypted bit stream, an electronic device configured to extract a security key by decrypting the encrypted bit stream and to compare the security key with a check security key to extract programming data for a programming operation by decrypting the encrypted bit stream when the security key and the check security key are the same as each other.

Abstract: A processing-in-memory (PIM) device includes a first memory region, a second memory region, a third memory region, and a multiplication-and-accumulation MAC circuit. The first memory region is configured to store weight data comprised of elements of a weight matrix. The second memory region is configured to store vector data comprised of elements of a vector matrix. The third memory region is configured to store constant data. The MAC circuit is configured to selectively perform a MAC arithmetic operation of the weight data and the vector data or an element-wise multiplication (EWM) arithmetic operation of the weight data and the constant data.

Abstract: A memory module includes a clock driver configured to receive an external clock through a module pin and configured to generate an internal clock that is transmitted to memory chips by delaying a division clock that is generated from the external clock by a clock delay interval. The clock driver adjusts the clock delay interval by comparing the phase of the division clock and the phase of a feedback division clock that is generated from the internal clock.

Abstract: A processing-in-memory (PIM) device includes a data register configured to store reference value data, and a multiplication/accumulation (MAC) operator configured to perform a comparison operation, a multiplication operation, and an addition operation on first data and second data, based on the reference value data to generate MAC operation result data when a MAC operation is performed.

Abstract: A memory controller includes a scheduler configured to generate an active command and an active address, and determine whether to issue the active command and the active address according to an output control signal; a row-hammer detector configured to generate the output control signal by checking a row-hammer possibility based on the active command and the active address; and a memory interface configured to provide the active command and the active address issued by the scheduler to a memory device.

Abstract: A semiconductor device includes a memory circuit including first and second banks and configured to count the numbers of inputs of first and second active signals for executing active operations on the first and second banks to generate a counting signal and to generate first and second hammering detection signals when the numbers of inputs of the first and second active signals are equal to or greater than a set number, and an active control circuit configured to store an active address as a target address when at least one of the first and second hammering detection signals is enabled, and to execute addition and subtraction operations on the target address to output a result of the addition and subtraction operations as an internal address for at least one of the first and second banks for executing a smart refresh operation, based on the counting signal in a refresh operation.

Abstract: A semiconductor system including: an operation period adjusting circuit configured to generate operation information for adjusting an operation period, when an input count of an active command during a test mode period is equal to or more than a preset count; and a command generation circuit configured to adjust the input count of the active command applied to a semiconductor device during a preset period, by adjusting the operation period on the basis of the operation information.

Abstract: A semiconductor system including: an operation period adjusting circuit configured to generate operation information for adjusting an operation period, when an input count of an active command during a test mode period is equal to or more than a preset count; and a command generation circuit configured to adjust the input count of the active command applied to a semiconductor device during a preset period, by adjusting the operation period on the basis of the operation information.

Abstract: A semiconductor system including: an operation period adjusting circuit configured to generate operation information for adjusting an operation period, when an input count of an active command during a test mode period is equal to or more than a preset count; and a command generation circuit configured to adjust the input count of the active command applied to a semiconductor device during a preset period, by adjusting the operation period on the basis of the operation information.

Abstract: A processing-in-memory (PIM) device includes an CRC logic circuit configured to generate write data and a write fail check signal from write input data when a write operation in an operation mode is performed, and generate a fail flag signal and converted data from read data and a read fail check signal when a read operation in the operation mode is performed; and a MAC operator configured to perform a MAC arithmetic operation for the converted data and buffer data, based on the fail flag signal to generate MAC operation result data.

Abstract: A memory may include a data transmission/reception circuit and a memory bank including a plurality of cell arrays. When a metadata mode is activated, data and metadata received through the data transmission/reception circuit may be distributed to and stored in the plurality of cell arrays. When the metadata mode is deactivated, the data received through the data transmission/reception circuit may be distributed to and stored in cell arrays except one or more no-access cell arrays, among the plurality of cell arrays.

Abstract: A memory module may include a management bus and a plurality of memories connected in series and connected to the management bus, each of the plurality of memories including an identification (ID) input terminal and an ID output terminal. Among the plurality of memories, a memory, for which an activation signal is applied to an ID input terminal of the memory, may set an ID for the memory in response to ID setting information transmitted on the management bus.

Abstract: A processing-in-memory (PIM) system includes a PIM device and a controller. The PIM device includes a data storage region and an arithmetic circuit for performing an arithmetic operation for data outputted from the data storage region. The controller is configured to control the PIM device. The PIM device is configured to transmit arithmetic quantity data of the arithmetic circuit to the controller in response to a request of the controller.

Abstract: A processing-in-memory (PIM) system includes a host and a PIM controller. The host is configured to generate a request for a memory access operation or a multiplication/accumulation (MAC) operation of a PIM device and also to generate a mode definition signal defining an operation mode of the PIM device. The PIM controller is configured to generate a command corresponding to the request to control the memory access operation or the MAC operation of the PIM device. When the operation mode of the PIM device is inconsistent with a mode set defined by the mode definition signal, the PIM controller controls the memory access operation or the MAC operation of the PIM device after changing the operation mode of the PIM device.

Abstract: An arithmetic device includes a multiplying-accumulating (MAC) operator and an activation function (AF) circuit. The MAC operator performs a MAC arithmetic operation for weight data and vector data to generate an arithmetic result signal. The AF circuit extracts a first bit group and a second bit group from the arithmetic result signal. In addition, the AF circuit generates an input distribution signal based on the first bit group and the second bit group. Moreover, the AF circuit selects and outputs an output distribution signal that corresponds to the input distribution signal based on an activation function.

Abstract: A processing-in-memory (PIM) device including a data storage region, a global buffer and an arithmetic circuit. The data storage region configured to store vector data and weight data. The global buffer configured to store vector data read from the data storage region. The arithmetic circuit configured to generate a calculation result by performing a calculation on vector data read from the global buffer and weight data read from the data storage region.

Abstract: A buffer chip may include: a chip select signal reception circuit configured to receive system chip select signals transmitted from a memory controller; a chip select signal mapping circuit configured to generate memory chip select signals by mapping the system chip select signals by using failed memory chip information; and a chip select signal transmission circuit configured to transmit the memory chip select signals to a plurality of memory chips.

Abstract: A processing-in-memory (PIM) device includes an ECC logic circuit configured to generate write data and write parity from write input data when a write operation in an operation mode is performed, and generate converted data from read data and read parity when a read operation in an operation mode is performed; and a MAC operator configured to perform a MAC arithmetic operation for the converted data and buffer data to generate MAC operation result data.

Abstract: A semiconductor system including: an operation period adjusting circuit configured to generate operation information for adjusting an operation period, when an input count of an active command during a test mode period is equal to or more than a preset count; and a command generation circuit configured to adjust the input count of the active command applied to a semiconductor device during a preset period, by adjusting the operation period on the basis of the operation information.