Patents by Inventor Christian Jäger
Christian Jäger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190273155Abstract: A power semiconductor device includes an active region surrounded by an inactive termination region each formed by part of a semiconductor body. The active region conducts load current between first and second load terminals. At least one power cell has trenches extending into the semiconductor body adjacent to each other along a first lateral direction and having a stripe configuration that extends along a second lateral direction into the active region. The trenches spatially confine a plurality of mesas each having at least one first type mesa electrically connected to the first load terminal and configured to conduct at least a part of the load current, and at least one second type mesa configured to not conduct the load current. A decoupling structure separates at least one of the second type mesas into a first section in the active region and a second section in the termination region.Type: ApplicationFiled: May 10, 2019Publication date: September 5, 2019Inventors: Matteo Dainese, Alexander Philippou, Markus Bina, Ingo Dirnstorfer, Erich Griebl, Christian Jaeger, Johannes Georg Laven, Caspar Leendertz, Frank Dieter Pfirsch
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Publication number: 20190226261Abstract: It is provided a carrier for a vehicle window lifter comprising a pane holder that comprises two opposed clamping parts between which a gap is provided for receiving a portion of a window pane and which are to be connected to each other via at least one fastening element when the window pane is inserted into the gap. The pane holder forms a bearing portion for one of the clamping parts, on which a swivel axis for the one clamping part is defined, and a swivel element protruding into the gap is provided, by means of which the one clamping part is pivotable in the direction of the other clamping part about the swivel axis by inserting the window pane into the gap.Type: ApplicationFiled: January 22, 2019Publication date: July 25, 2019Applicant: BROSE FAHRZEUGTEILE GMBH & CO. KOMMANDITGESELLSCHA FT, BAMBERGInventors: Udo TAUBMANN, Frank WAGNER, Christian SALM, Christian JAEGER
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Patent number: 10347754Abstract: A power semiconductor device is disclosed. In one example, the device comprises a semiconductor body coupled to a first load terminal and a second load terminal and comprising a drift region configured to conduct a load current between said terminals. The drift region comprises dopants of a first conductivity type. A source region is arranged in electrical contact with the first load terminal and comprises dopants of the first conductivity type. A channel region comprises dopants of a second conductivity. At least one power unit cell that includes at least one first type trench. The at least one power unit cell further includes a first mesa zone and a second mesa zone of the semiconductor body.Type: GrantFiled: September 14, 2017Date of Patent: July 9, 2019Assignee: Infineon Technologies AGInventors: Alexander Philippou, Christian Jaeger, Johannes Georg Laven, Max Christian Seifert, Antonio Vellei
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Patent number: 10304952Abstract: A power semiconductor device includes an active region surrounded by an inactive termination region each formed by part of a semiconductor body. The active region conducts load current between first and second load terminals. At least one power cell has trenches extending into the semiconductor body adjacent to each other along a first lateral direction and having a stripe configuration that extends along a second lateral direction into the active region. The trenches spatially confine a plurality of mesas each having at least one first type mesa electrically connected to the first load terminal and configured to conduct at least a part of the load current, and at least one second type mesa configured to not conduct the load current. A decoupling structure separates at least one of the second type mesas into a first section in the active region and a second section in the termination region.Type: GrantFiled: May 25, 2018Date of Patent: May 28, 2019Assignee: Infineon Technologies AGInventors: Matteo Dainese, Alexander Philippou, Markus Bina, Ingo Dirnstorfer, Erich Griebl, Christian Jaeger, Johannes Georg Laven, Caspar Leendertz, Frank Dieter Pfirsch
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Publication number: 20190123185Abstract: A method of processing a semiconductor device includes: providing a semiconductor body with a drift region; forming trenches extending into the semiconductor body along a vertical direction and arranged adjacent to each other along a first lateral direction; providing a mask arrangement having a lateral structure so that some of the trenches are exposed and at least one of the trenches is covered by the mask arrangement along the first lateral direction; subjecting the semiconductor body and the mask arrangement to a dopant material providing step to form a plurality of doping regions of a second conductivity type below bottoms of the exposed trenches; removing the mask arrangement; subjecting the semiconductor body to a temperature annealing step so that the doping regions extend in parallel to the first lateral direction and overlap to form a barrier region of the second conductivity type adjacent to the bottoms of the exposed trenches.Type: ApplicationFiled: October 23, 2018Publication date: April 25, 2019Inventors: Antonio Vellei, Markus Bina, Matteo Dainese, Christian Jaeger, Johannes Georg Laven, Alexander Philippou, Francisco Javier Santos Rodriguez
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Publication number: 20190123186Abstract: A power semiconductor device includes an active cell region with a drift region, and IGBT cells at least partially arranged within the active cell region. Each IGBT cell includes at least one trench extending into the drift region along a vertical direction, an edge termination region surrounding the active cell region, and a transition region arranged between the active cell region and the edge termination region. The transition region has a width along a lateral direction from the active cell region towards the edge termination region. At least some of the IGBT cells are arranged within, or, respectively, extend into the transition region. An electrically floating barrier region of each IGBT cell is arranged within the active cell region and in contact with at least some of the trenches of the IGBT cells. The electrically floating barrier region does not extend into the transition region.Type: ApplicationFiled: October 23, 2018Publication date: April 25, 2019Inventors: Alexander Philippou, Markus Bina, Matteo Dainese, Christian Jaeger, Johannes Georg Laven, Francisco Javier Santos Rodriguez, Antonio Vellei, Caspar Leendertz, Christian Philipp Sandow
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Patent number: 10224206Abstract: Disclosed is a bipolar semiconductor device, comprising a semiconductor body having a first surface; and a base region of a first doping type and a first emitter region in the semiconductor body, wherein the first emitter region adjoins the first surface and comprises a plurality of first type emitter regions of a second doping type complementary to the first doping type, a plurality of second type emitter regions of the second doping type, a plurality of third type emitter regions of the first doping type, and a recombination region comprising recombination centers, wherein the first type emitter regions and the second type emitter regions extend from the first surface into the semiconductor body, wherein the first type emitter regions have a higher doping concentration and extend deeper into the semiconductor body from the first surface than the second type emitter regions, wherein the third type emitter regions adjoin the first type emitter regions and the second type emitter regions, and wherein the recomType: GrantFiled: June 28, 2017Date of Patent: March 5, 2019Assignee: INFINEON TECHNOLOGIES AGInventors: Roman Baburske, Christian Jaeger, Franz Josef Niedernostheide, Hans-Joachim Schulze, Antonio Vellei
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Publication number: 20180342605Abstract: A power semiconductor device includes an active region surrounded by an inactive termination region each formed by part of a semiconductor body. The active region conducts load current between first and second load terminals. At least one power cell has trenches extending into the semiconductor body adjacent to each other along a first lateral direction and having a stripe configuration that extends along a second lateral direction into the active region. The trenches spatially confine a plurality of mesas each having at least one first type mesa electrically connected to the first load terminal and configured to conduct at least a part of the load current, and at least one second type mesa configured to not conduct the load current. A decoupling structure separates at least one of the second type mesas into a first section in the active region and a second section in the termination region.Type: ApplicationFiled: May 25, 2018Publication date: November 29, 2018Inventors: Matteo Dainese, Alexander Philippou, Markus Bina, Ingo Dirnstorfer, Erich Griebl, Christian Jaeger, Johannes Georg Laven, Caspar Leendertz, Frank Dieter Pfirsch
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Patent number: 10096531Abstract: A semiconductor device includes semiconductor body region and a surface region, the semiconductor body region including a first conductivity type first semiconductor region type and a second conductivity type second semiconductor region.Type: GrantFiled: September 22, 2015Date of Patent: October 9, 2018Assignee: Infineon Technologies AGInventors: Christian Jaeger, Johannes Georg Laven, Frank Dieter Pfirsch, Alexander Philippou
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Publication number: 20180286971Abstract: An IGBT having a barrier region is presented. A power unit cell of the IGBT has at least two trenches that may both extend into the barrier region. The barrier region may be p-doped and vertically confined, i.e., in and against the extension direction, by means of the drift region. The barrier region can be electrically floating.Type: ApplicationFiled: March 29, 2018Publication date: October 4, 2018Inventors: Alexander Philippou, Christian Jaeger, Johannes Georg Laven, Antonio Vellei
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Publication number: 20180277642Abstract: A semiconductor device includes transistor cells and enhancement cells. Each transistor cell includes a body zone that forms a first pn junction with a drift structure. The transistor cells may form, in the body zones, inversion channels when a first control signal exceeds a first threshold. The inversion channels form part of a connection between the drift structure and a first load electrode. A delay unit generates a second control signal which trailing edge is delayed with respect to a trailing edge of the first control signal. The enhancement cells form inversion layers in the drift structure when the second control signal falls below a second threshold lower than the first threshold. The inversion layers are effective as minority charge carrier emitters.Type: ApplicationFiled: May 22, 2018Publication date: September 27, 2018Inventors: Johannes Georg Laven, Roman Baburske, Matteo Dainese, Christian Jaeger
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Patent number: 10028506Abstract: The present invention relates to a plant strengthener in the form of a formulation comprising tocopherol or a derivative of a tocopherol, and to the use thereof for increasing the tolerance of crop plants to stress events, in particular to chemically induced stress, cold-induced stress, drought-induced stress or light-induced stress. The plant strengtheners are present in the form of formulations which comprise the following components A, B and C: a) at least one tocopherol or derivative of a tocopherol (component A); b) at least one nonionic emulsifier (component B); and c) at least one water-soluble boron compound (component C), and, if appropriate, d) one or more UV absorbers (component D) and e) one or more organic solvents.Type: GrantFiled: May 16, 2014Date of Patent: July 24, 2018Assignee: COMPO EXPERT GMBHInventors: Georg Ebert, Christian Jaeger
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Patent number: 10033370Abstract: A drive circuit for driving a semiconductor switch includes an overload detector circuit connected to the semiconductor switch and designed to detect an overload state of the semiconductor switch. The drive circuit further includes a driver circuit connected to a control terminal of the semiconductor switch and designed to generate, upon detection of an overload state, a driver signal having a level such that the semiconductor switch is switched off or switch-on is prevented. The driver circuit is further designed to generate a driver signal for driving the semiconductor switch according to a control signal, wherein for switching on the transistor at a first instant a driver signal is generated at a first level and, if no overload state is detected up to a predefined time period having elapsed, the level of the driver signal is increased to a second level.Type: GrantFiled: June 12, 2015Date of Patent: July 24, 2018Assignee: Infineon Technologies AGInventors: Christian Jaeger, Johannes Georg Laven
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Patent number: 9997602Abstract: A semiconductor device includes transistor cells and enhancement cells. Each transistor cell includes a body zone that forms a first pn junction with a drift structure. The transistor cells may form, in the body zones, inversion channels when a first control signal exceeds a first threshold. The inversion channels form part of a connection between the drift structure and a first load electrode. A delay unit generates a second control signal which trailing edge is delayed with respect to a trailing edge of the first control signal. The enhancement cells form inversion layers in the drift structure when the second control signal falls below a second threshold lower than the first threshold. The inversion layers are effective as minority charge carrier emitters.Type: GrantFiled: December 19, 2015Date of Patent: June 12, 2018Assignee: Infineon Technologies AGInventors: Johannes Georg Laven, Roman Baburske, Matteo Dainese, Christian Jaeger
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Publication number: 20180076309Abstract: A power semiconductor device is disclosed. In one example, the device comprises a semiconductor body coupled to a first load terminal and a second load terminal and comprising a drift region configured to conduct a load current between said terminals. The drift region comprises dopants of a first conductivity type. A source region is arranged in electrical contact with the first load terminal and comprises dopants of the first conductivity type. A channel region comprises dopants of a second conductivity. At least one power unit cell that includes at least one first type trench. The at least one power unit cell further includes a first mesa zone and a second mesa zone of the semiconductor body.Type: ApplicationFiled: September 14, 2017Publication date: March 15, 2018Applicant: Infineon Technologies AGInventors: Alexander Philippou, Christian Jaeger, Johannes Georg Laven, Max Christian Seifert, Antonio Vellei
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Publication number: 20180012764Abstract: Disclosed is a bipolar semiconductor device, comprising a semiconductor body having a first surface; and a base region of a first doping type and a first emitter region in the semiconductor body, wherein the first emitter region adjoins the first surface and comprises a plurality of first type emitter regions of a second doping type complementary to the first doping type, a plurality of second type emitter regions of the second doping type, a plurality of third type emitter regions of the first doping type, and a recombination region comprising recombination centers, wherein the first type emitter regions and the second type emitter regions extend from the first surface into the semiconductor body, wherein the first type emitter regions have a higher doping concentration and extend deeper into the semiconductor body from the first surface than the second type emitter regions, wherein the third type emitter regions adjoin the first type emitter regions and the second type emitter regions, and wherein the recomType: ApplicationFiled: June 28, 2017Publication date: January 11, 2018Inventors: Roman Baburske, Christian Jaeger, Franz Josef Niedernostheide, Hans-Joachim Schulze, Antonio Vellei
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Patent number: 9741571Abstract: Disclosed is a bipolar semiconductor device, comprising a semiconductor body having a first surface; and a base region of a first doping type and a first emitter region in the semiconductor body, wherein the first emitter region adjoins the first surface and comprises a plurality of first type emitter regions of a second doping type complementary to the first doping type, a plurality of second type emitter regions of the second doping type, a plurality of third type emitter regions of the first doping type, and a recombination region comprising recombination centers, wherein the first type emitter regions and the second type emitter regions extend from the first surface into the semiconductor body, wherein the first type emitter regions have a higher doping concentration and extend deeper into the semiconductor body from the first surface than the second type emitter regions, wherein the third type emitter regions adjoin the first type emitter regions and the second type emitter regions, and wherein the recomType: GrantFiled: March 25, 2016Date of Patent: August 22, 2017Assignee: Infineon Technologies AGInventors: Roman Baburske, Christian Jaeger, Franz-Josef Niedernostheide, Hans-Joachim Schulze, Antonio Vellei
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Patent number: 9691887Abstract: A semiconductor device includes a semiconductor body including a drift zone that forms a pn junction with an emitter region. A first load electrode is at a front side of the semiconductor body. A second load electrode is at a rear side of the semiconductor body opposite to the front side. One or more variable resistive elements are electrically connected in a controlled path between the drift zone and one of the first and second load electrodes. The variable resistive elements activate and deactivate electronic elements of the semiconductor device in response to a change of the operational state of the semiconductor device.Type: GrantFiled: September 17, 2015Date of Patent: June 27, 2017Assignee: Infineon Technologies AGInventors: Alexander Philippou, Christian Jaeger, Johannes Georg Laven, Frank Dieter Pfirsch
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Patent number: 9679892Abstract: A reverse blocking semiconductor device is manufactured by introducing impurities of a first conductivity type into a semiconductor substrate of the first conductivity type through a process surface to obtain a process layer extending into the semiconductor substrate up to a first depth, and introducing impurities of a second, complementary conductivity type into the semiconductor substrate through openings of an impurity mask provided on the process surface to obtain emitter zones of the second conductivity type extending up to a second depth deeper than the first depth and channels of the first conductivity type between the emitter zones. Exposed portions of the process layer are removed above the emitter zones.Type: GrantFiled: December 31, 2015Date of Patent: June 13, 2017Assignee: Infineon Technologies AGInventors: Johannes Georg Laven, Roman Baburske, Christian Jaeger, Hans-Joachim Schulze
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Patent number: 9653568Abstract: A method of manufacturing an insulated gate bipolar transistor includes providing trenches extending from a first surface to a layer section in a semiconductor portion, introducing impurities into mesa sections between the trenches, and forming, from the introduced impurities, second portions of doped regions separated from source regions by body regions. The source regions are electrically connected to an emitter electrode. The second portions have a second mean net impurity concentration exceeding at least ten times a first mean net impurity concentration in first portions of the doped layer. The first portions extend from the body regions to the layer section, respectively.Type: GrantFiled: June 9, 2015Date of Patent: May 16, 2017Assignee: Infineon Technologies AGInventors: Johannes Georg Laven, Alexander Philippou, Hans-Joachim Schulze, Christian Jaeger, Roman Baburske, Antonio Vellei