Abstract: Embodiments disclosed herein relate to a pre-deposition treatment of materials utilized in metal gates of different transistors on a semiconductor substrate. In an embodiment, a method includes exposing a first metal-containing layer of a first device and a second metal-containing layer of a second device to a reactant to form respective monolayers on the first and second metal-containing layers. The first and second devices are on a substrate. The first device includes a first gate structure including the first metal-containing layer. The second device includes a second gate structure including the second metal-containing layer different from the second metal-containing layer. The monolayers on the first and second metal-containing layers are exposed to an oxidant to provide a hydroxyl group (—OH) terminated surface for the monolayers. Thereafter, a third metal-containing layer is formed on the —OH terminated surfaces of the monolayers on the first and second metal-containing layers.

Abstract: A method includes providing a structure having a substrate and a channel layer over the substrate; forming a high-k gate dielectric layer over the channel layer; forming a work function metal layer over the high-k gate dielectric layer; forming a silicide layer over the work function metal layer; annealing the structure such that a first portion of the work function metal layer that interfaces with the high-k gate dielectric layer is doped with silicon elements from the silicide layer; removing the silicide layer; and forming a bulk metal layer over the work function metal layer.

Abstract: Embodiments disclosed herein relate to a pre-deposition treatment of materials utilized in metal gates of different transistors on a semiconductor substrate. In an embodiment, a method includes exposing a first metal-containing layer of a first device and a second metal-containing layer of a second device to a reactant to form respective monolayers on the first and second metal-containing layers. The first and second devices are on a substrate. The first device includes a first gate structure including the first metal-containing layer. The second device includes a second gate structure including the second metal-containing layer different from the second metal-containing layer. The monolayers on the first and second metal-containing layers are exposed to an oxidant to provide a hydroxyl group (—OH) terminated surface for the monolayers. Thereafter, a third metal-containing layer is formed on the —OH terminated surfaces of the monolayers on the first and second metal-containing layers.

Abstract: Embodiments disclosed herein relate to a pre-deposition treatment of materials utilized in metal gates of different transistors on a semiconductor substrate. In an embodiment, a method includes exposing a first metal-containing layer of a first device and a second metal-containing layer of a second device to a reactant to form respective monolayers on the first and second metal-containing layers. The first and second devices are on a substrate. The first device includes a first gate structure including the first metal-containing layer. The second device includes a second gate structure including the second metal-containing layer different from the second metal-containing layer. The monolayers on the first and second metal-containing layers are exposed to an oxidant to provide a hydroxyl group (—OH) terminated surface for the monolayers. Thereafter, a third metal-containing layer is formed on the —OH terminated surfaces of the monolayers on the first and second metal-containing layers.

Abstract: An automotive ornament, including a circuit board, a substrate, a light-emitting element, a surface decoration layer, and a pressure sensing element, is provided. The substrate is disposed on the circuit board. The light-emitting element is disposed between the circuit board and the substrate, and the light-emitting element is electrically connected to the circuit board. The surface decoration layer wraps the substrate. The surface decoration layer covers the pressure sensing element. The pressure sensing element is electrically connected to the light-emitting element through the circuit board, and pressure sensing of the pressure sensing element causes the light-emitting element to emit light, vibrate, or feedback sound.

Abstract: An automotive ornament including a substrate, a texture layer and a transparent layer is provided. The substrate has a first surface and a second surface opposite to the first surface. The texture layer is located on the first surface, wherein the texture layer includes a texture pattern. The transparent layer extends from a top surface of the texture layer to cover a sidewall of the texture layer and a sidewall of the substrate. The transparent layer covers the texture pattern, and the texture layer has a degree of stretching less than the transparent layer. A manufacturing method of automotive ornament is also provided.

Abstract: The invention relates to a technical field of car roller shutter door production, in particular to a method for manufacturing a car roller shutter door. A single film piece is firstly vacuum formed into a desired shape, and then rubber is injected into the film piece after vacuum forming, so that the rubber and the film piece are integrally formed to form a single roller shutter strip, and then a required number of single roller shutter strips are placed and laminated on a flexible substrate in an integrated and orderly manner to form a car roller shutter door. Each of roller shutter strips is independent of each other and does not interfere or affect each other, which improves flexibility of the car roller shutter door. Compared with long strips of whole film sheet on the car roller shutter door in the prior art, each of film pieces of the present invention is independent of each other and does not have defect of easy fracture of the whole film sheet, which makes service life long.

Abstract: A method for manufacturing an automotive ornament is provided, and the method includes following steps. A light-transmitting element is provided. At least one opening running through at least part of the light-transmitting element is formed. A sputtering layer is formed by a sputtering process using a sputtering device, where the sputtering layer is located in the at least one opening to form an ornament unit.

Abstract: A computer program product, including a non-transitory, computer-readable medium containing instructions therein which, when executed by at least one processor, cause the at least one processor to perform a performance analysis of a network of interconnected nodes, the nodes configured to perform corresponding logic functions. The performance analysis includes, for a pipeline node in the network, calculating a pre-charging finish time of the pipeline node based on an evaluation finish time of a fanout node of the pipeline node and an acknowledge output time parameter of the fanout node. The performance analysis further includes, for the pipeline node in the network, calculating a cycle time of the pipeline node based on the calculated pre-charging finish time and an evaluation finish time of a fanin node of the pipeline node.

Abstract: A protection circuit, and related method, for an electronic device including a first power output interface and a second power output interface is disclosed. The protection circuit includes a first switch element, coupled between a first voltage source and the first power output interface. The detection circuit being operation to detect an output voltage value of the second power output interface to generate a detection result. The first switch element, according to the detection result, connects the first voltage source to the first power output interface to allow the first power output interface to output power to an external terminal, or disconnects the first voltage source from the first power output interface.

Abstract: Disclosed herein is a sustained-release formulation that includes, based on the total weight of the sustained-release formulation, 5 wt % to 40 wt % of pregabalin, or a pharmaceutically acceptable salt, solvate or hydrate thereof, 0.1 wt % to 5 wt % of carbomer, and 20 wt % to 60 wt % of polyethylene oxide, wherein the formulation is free from polyvinyl acetate. The formulation can release pregabalin consistently over a time period of 24 hours, and is suitable for once-daily administration.

Abstract: A protection circuit for an electronic device including a first power output interface and a second power output interface is disclosed. The protection circuit includes a first switch element and a detection circuit. The first switch element is coupled between a first voltage source and the first power output interface. In an operation of the protection circuit, the detection circuit detects an output voltage value of the second power output interface to generate a detection result, and the first switch element, according to the detection result, connects the first voltage source to the first power output interface to allow the first power output interface to output power to an external terminal, or disconnects the first voltage source from the first power output interface.

Abstract: The present invention disclosed a method for preparing of collagen having regeneration and repair effects from Wharton's Jelly mesenchymal stein cells, comprising steps of culturing the Wharton's Jelly mesenchymal stein cells in a first medium for 16 to 24 hours; replacing the first medium with a second medium for culturing the Wharton's Jelly mesenchymal stein cells for 36 to 48 hours; collecting the Wharton's Jelly mesenchymal stein cells and adding a cell lysis solution to lyse the Wharton's Jelly mesenchymal stein cells for 0.5 to 2 hours, adding an inorganic salt solution to the cell lysis solution to obtain a mixing solution for further incubation at 4° C. for 24 to 48 hours; centrifuging the mixing solution and collecting a sediment, dissolving the sediment by a preservation solution to obtain a collage.

Abstract: Disclosed herein is a process for producing a recombinant Candida cell, which involves genetically engineering a parent Candida cell using a Clustered Regularly Interspaced Short Palindromic Repeats (CRISPR)/CRISPR-associated (Cas)(CRISPR/Cas) system. A recombinant Candida cell obtained using the process and a method for producing D-lactic acid from a biomass using the recombinant Candida cell are also disclosed.

Abstract: An encapsulation method of electronic components comprises steps as follows: preparing electronic components with cylindrical bodies wherein a cylindrical body has front and rear ends made of metals and a middle end made of ceramics and the front end or the rear end features an outer diameter greater than the middle end of the cylindrical body; preparing a mould consisting of upper and lower moulds; encasing the cylindrical bodies inside the upper and lower moulds, injecting heated and softened protective materials into the mould in which protective materials as protective layers are coated on the cylindrical bodies; injecting the cylindrical bodies removed from the upper and lower moulds into a roller in which excessive protective layers on the front and rear ends of the cylindrical bodies are de-coated.

Abstract: The present invention relates to a method for avoidance of blue light damage by using a stem cell composition. The stem cell composition comprises 10% (v/v) to 50% (v/v) of the conditioned medium of Wharton's Jelly mesenchymal stem cells. The conditioned medium of Wharton's Jelly mesenchymal stem cells is prepared by culturing Wharton's Jelly mesenchymal stem cells in a medium containing human basic fibroblast growth factors for 2 to 5 days, and collecting the medium for centrifugation and filtration.

Abstract: A computer program product, including a non-transitory, computer-readable medium containing instructions therein which, when executed by at least one processor, cause the at least one processor to perform a performance analysis of a network of interconnected nodes, the nodes configured to perform corresponding logic functions. The performance analysis includes, for a pipeline node in the network, calculating a pre-charging finish time of the pipeline node based on an evaluation finish time of a fanout node of the pipeline node and an acknowledge output time parameter of the fanout node. The performance analysis further includes, for the pipeline node in the network, calculating a cycle time of the pipeline node based on the calculated pre-charging finish time and an evaluation finish time of a fanin node of the pipeline node.

Abstract: Embodiments disclosed herein relate to a pre-deposition treatment of materials utilized in metal gates of different transistors on a semiconductor substrate. In an embodiment, a method includes exposing a first metal-containing layer of a first device and a second metal-containing layer of a second device to a reactant to form respective monolayers on the first and second metal-containing layers. The first and second devices are on a substrate. The first device includes a first gate structure including the first metal-containing layer. The second device includes a second gate structure including the second metal-containing layer different from the second metal-containing layer. The monolayers on the first and second metal-containing layers are exposed to an oxidant to provide a hydroxyl group (—OH) terminated surface for the monolayers. Thereafter, a third metal-containing layer is formed on the —OH terminated surfaces of the monolayers on the first and second metal-containing layers.

Abstract: Embodiments disclosed herein relate to a pre-deposition treatment of materials utilized in metal gates of different transistors on a semiconductor substrate. In an embodiment, a method includes exposing a first metal-containing layer of a first device and a second metal-containing layer of a second device to a reactant to form respective monolayers on the first and second metal-containing layers. The first and second devices are on a substrate. The first device includes a first gate structure including the first metal-containing layer. The second device includes a second gate structure including the second metal-containing layer different from the second metal-containing layer. The monolayers on the first and second metal-containing layers are exposed to an oxidant to provide a hydroxyl group (—OH) terminated surface for the monolayers. Thereafter, a third metal-containing layer is formed on the —OH terminated surfaces of the monolayers on the first and second metal-containing layers.

Abstract: Disclosed herein are Bacillus coagulans strain RBE4-4, which is deposited at the China Center for Type Culture Collection (CCTCC) under accession number CCTCC M 2018310, and a method for producing lactic acid using such strain. The method comprises subjecting a fermentable sugar-containing substrate to a fermentation process with Bacillus coagulans strain RBE4-4.