Abstract: A semiconductor device includes a first electrode layer, a ferroelectric layer, a first alignment layer and a second electrode layer. A material of the first alignment layer includes rare-earth metal oxide. The ferroelectric layer and the first alignment layer are disposed between the first electrode layer and the second electrode layer, and the first alignment layer is disposed between the ferroelectric layer and the first electrode layer.

Abstract: Disclosed are compounds of formula (I): in which L1, L2, LD1, LD2, R5, and R6 are defined. Also provided are pharmaceutical compositions containing such a compound a method of treating cancer using the compound.

Abstract: A tumor neoantigen prediction method and a tumor neoantigen prediction system are provided. In the method, multiple amino acid sequences in genes of a person to be tested are extracted as multiple test peptides to be compared with multiple human protein sequences in a protein sequence database to find multiple similar peptides that match the human protein sequences. The similar peptides are filtered out from the test peptides and the filtered test peptides are input to multiple trained human leukocyte antigen (HLA) models to obtain multiple ranking results of the test peptides. A weighted sum of rankings of each test peptide in the ranking results is calculated as a score of the test peptide. At least one of the test peptides is selected as a neoantigen adapted for the person to be tested according to the score.

Abstract: A method for manufacturing a nitrile butadiene rubber includes: subjecting a material composition containing water, butadiene, acrylonitrile, an emulsifying agent, an initiator, and a molecular weight regulator to an emulsion polymerization reaction, so as to form an emulsion; and adding a reactive antioxidant and a non-reactive antioxidant to the emulsion to form a mixture, followed by subjecting the mixture to a coagulation process, so as to form the nitrile butadiene rubber.

Abstract: Disclosed herein is a specific crystalline forms of (S, E)-4-(dimethylamino)-N-(3-(4-(2-hydroxy-1-phenylethylamino)-6-phenylfuro[2,3-d]pyrimidin-5-yl)phenyl)but-2-enamide (ABT-101) free base, the pharmaceutical composition and capsule comprising the same, and the medical application thereof. Said crystalline forms of ABT-101 free base can exhibit unexpected stability and improved pharmacokinetic properties compared to other forms or salt thereof, thereby allowing said compound more suitable for drug development and satisfying the requirements for bioavailability and drug efficacy.

Abstract: The current disclosure describes a new vertical tunnel field-effect transistor (TFET). The TFET includes a source layer over a substrate. A first channel layer is formed over the source layer. A drain layer is stacked over the first channel layer with a second channel layer stacked therebetween. The drain layer and the second channel layer overlap a first surface portion of the first channel layer. A gate structure is positioned over the channel layer by a second surface portion of the channel layer and contacts a sidewall of the second channel layer.

Abstract: A device structure can be formed by forming a layer stack comprising a continuous bottom electrode material layer, a continuous dielectric layer, and a continuous dielectric metal oxide layer; increasing an oxygen-to-metal ratio in a top surface portion of the continuous dielectric metal oxide layer by incorporating oxygen atoms into the top surface portion of the continuous dielectric metal oxide layer; depositing a continuous semiconductor layer over the continuous dielectric metal oxide layer; and patterning the continuous semiconductor layer and the layer stack to form a patterned layer stack including a bottom electrode, a dielectric layer, a dielectric metal oxide layer, and a semiconductor layer.

Abstract: The present disclosure relates a ferroelectric field-effect transistor (FeFET) device. The FeFET device includes a ferroelectric structure having a first side and a second side. A gate structure is disposed along the first side of the ferroelectric structure, and an oxide semiconductor is disposed along the second side of the ferroelectric structure. The oxide semiconductor has a first semiconductor type. A source region and a drain region are disposed on the oxide semiconductor. The gate structure is laterally between the source region and the drain region. A polarization enhancement structure is arranged on the oxide semiconductor between the source region and the drain region. The polarization enhancement structure includes a semiconductor material or an oxide semiconductor material having a second semiconductor type that is different than the first semiconductor type.

Abstract: A field-effect transistor (FET), selectively switchable between first and second states, includes: source and drain regions and a channel region disposed therebetween; a gate arranged to selectively receive a bias voltage which switches the FET between the first and second states; a memory structure between the gate and the channel region, structure including a first portion which is anti-ferroelectric and a second portion which is ferroelectric, both portions being polarized in a first direction when the FET is in the first state; and a depolarization dielectric layer disposed proximate to the memory structure. When the FET is set to the first state, the depolarization dielectric layer destabilizes a polarization of the second portion of the memory structure while maintaining a polarization of the first portion.

Abstract: A semiconductor memory structure includes a gate structure, a ferroelectric layer over the gate structure, a channel layer over the ferroelectric layer, an intervening structure between the ferroelectric layer and the channel layer, and a source structure and a drain structure separated from each other over the channel layer. A thickness of the intervening structure is less than a thickness of the channel layer and less than a thickness of the ferroelectric layer. The channel layer and the intervening structure include different materials.

Abstract: Disclosed herein is a specific crystalline forms of (S, E)-4-(dimethylamino)-N-(3-(4-(2-hydroxy-1-phenylethylamino)-6-phenylfuro[2,3-d]pyrimidin-5-yl)phenyl)but-2-enamide (ABT-101) free base, the pharmaceutical composition and capsule comprising the same, and the medical application thereof. Said crystalline forms of ABT-101 free base can exhibit unexpected stability and improved pharmacokinetic properties compared to other forms or salt thereof, thereby allowing said compound more suitable for drug development and satisfying the requirements for bioavailability and drug efficacy.

Abstract: Embodiments provide data in-flight (DIF) services to software applications such as virtual machines (VMs) at an application level without requiring modification to established storage protocols. In exemplary embodiments, a storage controller transmits an advertisement of one or more data in-flight (DIF) services supported by a storage container of the storage controller. One or more DIF services communication path is created with attributes corresponding to the DIF services supported by the storage container. The storage controller receives, over the DIF services communication path, tagged data that can include data transmitted by a virtual machine (VM) for storage in the storage container.

Abstract: This disclosure in general describes a pharmaceutical kit for treating colorectal cancer; the pharmaceutical kit comprises (E)-N-hydroxy-3-(1-(phenylsulfonyl)-indolin-5-yl)-acrylamide, and an anti-PD-1 or anti-PD-L1 antibody. Furthermore, this disclosure describes a method for treating colorectal cancer in a subject, comprising administering to the subject the aforementioned pharmaceutical kit, wherein the (E)-N-hydroxy-3-(1-(phenylsulfonyl)-indolin-5-yl)-acrylamide is given to the subject in a dosage ranging from about 10 ?g/kg to 1 g/kg; and the anti-PD-1 or anti-PD-L1 antibody is administered to the subject at a dosage ranging from about 1 ?g/kg to 100 mg/kg.

Abstract: An antiferroelectric field effect transistor (Anti-FeFET) of a memory cell includes an antiferroelectric layer instead of a ferroelectric layer. The antiferroelectric layer may operate based on a programmed state and an erased state in which the antiferroelectric layer is in a fully polarized alignment and a non-polarized alignment (or a random state of polarization), respectively. This enables the antiferroelectric layer in the FeFET to provide a sharper/larger voltage drop for an erase operation of the FeFET (e.g., in which the FeFET switches or transitions from the programmed state to the erased state) relative to a ferroelectric material layer that operates based on switching between two opposing fully polarized states.

Abstract: Provided are a ferroelectric memory device and a method of forming the same. The ferroelectric memory device includes: a gate electrode; a ferroelectric layer, disposed on the gate electrode; a channel layer, disposed on the ferroelectric layer; a pair of source/drain (S/D) electrodes, disposed on the channel layer; a first insertion layer, disposed between the gate electrode and the ferroelectric layer; and a second insertion layer, disposed between the ferroelectric layer and the channel layer, wherein the second insertion layer has a thickness less than a thickness of the first insertion layer.

Abstract: Compounds of Formula (I) shown below and a pharmaceutical composition containing one of the compounds: Each of the variables is defined herein. Also disclosed is a method of treating a condition associated with uncontrolled cell growth with a compound of Formula (I).

Abstract: Ultra near-field index modulated plasmonic nano-aperture label-free imaging methods and techniques are useful for imaging and detection of biological microparticles and nanoparticles such as circulating tumor exosomes (CTEs), bacteria and vimses. The methods and techniques utilize a high-density array of gold, silver, or gold/silver alloy nanodisks, in some cases on an undercut or invisible substrate. Given the relatively large nanodisk dimensions, the nanodisk array may feature a significantly blue-shifted LSPR extinction peak due to both far-field plasmonic coupling and substrate undercut. The ultra near-field imaging methods have the ability to image nanoparticles as small as 25 nm.

Abstract: A semiconductor device includes a first electrode layer, a ferroelectric layer, a first alignment layer and a second electrode layer. A material of the first alignment layer includes rare-earth metal oxide. The ferroelectric layer and the first alignment layer are disposed between the first electrode layer and the second electrode layer, and the first alignment layer is disposed between the ferroelectric layer and the first electrode layer.

Abstract: Aspects of a cloud service framework are described. In some examples, a noncompliance event is received. The noncompliance event is identified using parameters detected from a deployment of hardware resources and software resources provided by a cloud service according to a service level agreement (SLA). An application programming interface (API) associated with the noncompliance event is identified. The API is disabled by updating an API availability status. A request to invoke the API is received, and the API is prevented from being forwarded to a backend service that provides the API.

Abstract: An isolated antibody, comprising: a heavy chain variable domain (VH) that is at least 75% identical to the amino acid sequence of SEQ ID NO: 1; and a light chain variable domain (VL) that is at least 75% identical to the amino acid sequence of SEQ ID NO: 2; wherein the antibody binds specifically to human neurotensin receptor 1 (hNTSR1).