Abstract: A semiconductor device including nanosheet field-effect transistors (NSFETs) in a first region and fin field-effect transistors (FinFETs) in a second region and methods of forming the same are disclosed. In an embodiment, a device includes a first memory cell, the first memory cell including a first transistor including a first channel region, the first channel region including a first plurality of semiconductor nanostructures; and a second transistor including a second channel region, the second channel region including a semiconductor fin.

Abstract: A health device provides cold compression and hot compression and comprises a device body, at least one temperature adjusting device, and a control module. The at least one temperature adjusting device comprises a thermoelectric cooling chip, a thermal conduction body and a heatsink. The thermoelectric cooling chip is electrically connected to the control module, and configured to convert electrical power into heating energy or cooling energy, and conduct the heating energy or cooling energy to the heatsink through the thermal conduction body, and the heatsink is in contact with the heat dissipation body to achieve effect of adjusting temperature.

Abstract: Embodiments of structure and methods for forming a memory device are provided. In an example, a memory device includes a substrate, a stack above the substrate, a channel structure, and a source contact structure each extending vertically through the memory stack. The source contact structure includes (i) a plurality of first source contact portions each extending vertically and laterally separated from one another and (ii) a second source contact portion extending vertically over and in contact with the plurality of first source contact portions, the second source contact portion being laterally continuous.

Abstract: Compositions and methods regarding guanidinium functionalized polycarbonates that provide potent antimicrobial activity against multidrug resistant (MDR) bacteria, including Klebsiella pneumoniae (K. pneumoniae) are provided. According to an embodiment, an antimicrobial guanidinium-functionalized polymer is provided that comprises a hydrophobic molecular backbone with cationic guanidinium moieties respectively bound to the hydrophobic molecular backbone via butyl spacer groups. The antimicrobial guanidinium-functionalized polymer self-assembles into a micelle structure with hydrophobic residuals of the antimicrobial guanidinium-functionalized polymer buried inside the micelle structure and the cationic guanidinium moieties exposed on an external surface of the micelle structure to target pathogens.

Abstract: Techniques regarding polymers with antimicrobial functionality are provided. For example, one or more embodiments described herein can regard a polymer, which can comprise a repeating ionene unit. The repeating ionene unit can comprise a cation distributed along a degradable backbone. The degradable backbone can comprise a terephthalamide structure. Further, the repeating ionene unit can have antimicrobial functionality.

Abstract: A semiconductor device includes a memory macro having first and second well pick-up (WPU) areas along first and second edges of the memory macro, respectively, and memory bit areas between the first and the second WPU areas. The first and second WPU areas are oriented lengthwise generally along a first direction. In each of the first and second WPU areas, the memory macro includes n-type wells and p-type wells arranged alternately along the first direction with a well boundary between each of the n-type wells and the adjacent p-type well. The memory macro further includes active regions; an isolation structure; gate structures, and a first dielectric layer that is disposed at each of the well boundaries. From a top view, the first dielectric layer extends generally along a second direction perpendicular to the first direction and through all the gate structures in the first and the second WPU areas.

Abstract: Techniques regarding guanidinium functionalized polylysine polymers that can have antimicrobial and/or anticancer activity are provided. For example, one or more embodiments described herein can comprise a chemical composition, which can comprise a polymer comprising a molecular backbone covalently bonded to a pendent guanidinium functional group, wherein the molecular backbone can comprise a polylysine structure.

Abstract: A semiconductor device includes a metal layer and a spacer arranged adjacent to the metal layer. The spacer includes a composite-dielectric layer including a composite-dielectric material. A composition of the composite-dielectric material is a mixture of a composition of a first dielectric material and a composition of a second dielectric material different from the first dielectric material.

Abstract: Techniques regarding enhancing antimicrobial activity of antirheumatic agents by combination therapy are provided. For example, one or more embodiments described herein can regard a chemical composition comprising a polycarbonate polymer functionalized with a guanidinium functional group. The chemical composition can also comprise an antirheumatic agent, and the polycarbonate polymer can enhance an antimicrobial activity of the antirheumatic agent.

Abstract: Compositions and methods regarding guanidinium functionalized polycarbonates that provide potent antimicrobial activity against multidrug resistant (MDR) bacteria, including Klebsiella pneumoniae (K. pneumoniae) are provided. According to an embodiment, an antimicrobial guanidinium-functionalized polymer is provided that comprises a hydrophobic molecular backbone with cationic guanidinium moieties respectively bound to the hydrophobic molecular backbone via butyl spacer groups. The antimicrobial guanidinium-functionalized polymer self-assembles into a micelle structure with hydrophobic residuals of the antimicrobial guanidinium-functionalized polymer buried inside the micelle structure and the cationic guanidinium moieties exposed on an external surface of the micelle structure to target pathogens.

Abstract: Techniques regarding treating one or more microbe infections with combination therapy are provided. For example, one or more embodiments described herein can comprise a method, which can comprise enhancing an antimicrobial activity of an antibiotic by a combination therapy. The combination therapy can comprise the antibiotic and a polycarbonate polymer functionalized with a guanidinium functional group.

Abstract: A method for forming a gate structure of a 3D memory device is provided. The method comprises: forming, on a substrate, an alternating dielectric stack including a plurality of dielectric layer pairs, each of the plurality of dielectric layer pairs comprising a first dielectric layer and a second dielectric layer different from the first dielectric layer; forming a slit penetrating vertically through the alternating dielectric stack and extending in a horizontal direction; removing the plurality of second dielectric layers in the alternating dielectric stack through the slit to form a plurality of horizontal trenches; forming a gate structure in each of the plurality of horizontal trenches; forming a spacer layer on sidewalls of the slit to cover the gate structures, wherein the spacer layer has a laminated structure; and forming a conductive wall in the slit, wherein the conductive wall is insulated from the gate structures by the spacer layer.

Abstract: A lens control method is applied to a camera module with an OIS motor. The module includes a lens, an OIS motor, an OIS motor driver module, and an imaging sensor. The method includes: obtaining a first speed and a first direction of a to-be-photographed object in a moving process, an object distance between the to-be-photographed object and the lens, and an image distance between the lens and the imaging sensor; calculating a second speed and a second direction based on the first speed, the first direction, the object distance, and the image distance; and sending a control signal to the OIS motor driver module, so that the OIS motor driver module drives the OIS motor to control the lens to move at the second speed and in the second direction.

Abstract: Embodiments of the present disclosure provide network live-broadcasting methods and devices. The method can include: obtaining live-broadcasting data from a server side; obtaining service data from the server side; determining whether the obtained live-broadcasting data contains key information, wherein the key information is inserted by a live-broadcasting side in the live-broadcasting data when predetermined content corresponding to the service data is included in the live-broadcasting data; and outputting, in response to receiving the key information, the service data on a playing interface of the live-broadcasting data, so that the service data is output synchronously with the predetermined content.

Abstract: Embodiments of a three-dimensional (3D) memory device with a corrosion-resistant composite spacer and method for forming the same are disclosed. In an example, a method for forming a 3D memory device is disclosed. A dielectric stack including a plurality of dielectric/sacrificial layer pairs is formed on a substrate. A memory string extending vertically through the dielectric stack is formed. A slit extending vertically through the dielectric stack is formed. A memory stack is formed on the substrate including a plurality of conductor/dielectric layer pairs by replacing, with a plurality of conductor layers, the sacrificial layers in the dielectric/sacrificial layer pairs through the slit. A composite spacer is formed along a sidewall of the slit. The composite spacer includes a first silicon oxide film, a second silicon oxide film, and a dielectric film formed laterally between the first silicon oxide film and the second silicon oxide film. A slit contact extending vertically in the slit is formed.

Abstract: A substrate includes a first doped region having a first type dopant, and a second doped region having a second type dopant and adjacent to the first doped region. A stack is formed that includes first layers and second layers alternating with each other. The first and second layers each have a first and second semiconductor material, respectively. The second semiconductor material is different than the first semiconductor material. A mask element is formed that has an opening in a channel region over the second doped region. A top portion of the stack not covered by the mask element is recessed. The stack is then processed to form a first and a second transistors. The first transistor has a first number of first layers. The second transistor has a second number of first layers. The first number is greater than the second number.

Abstract: A static random-access memory (SRAM) semiconductor device including a memory unit is provided. The memory unit includes a bit array arranged in rows and columns. The columns are defined by a plurality of bit line pairs connecting to a plurality of memory cells in the column. The memory unit also includes an edge area adjacent an edge row of the bit array, wherein the edge row includes a plurality of dummy memory cells. The memory unit further includes a plurality of bit line drivers adjacent the bit array and opposite the edge area. The bit line drivers are for driving the bit lines with data to the memory cells during a write operation. The dummy memory cells include a write assist circuit for each bit line pair. The write assist circuit is used for facilitating the writing of the data on the bit line pairs to the memory cells.

Abstract: Semiconductor devices and methods are provided. In an embodiment, a semiconductor device includes a bias source, a memory cell array including a first region adjacent to the bias source and a second region away from the bias source, and a conductive line electrically coupled to the bias source, a first memory cell in the first region and a second memory cell in the second region. The first memory cell is characterized by a first alpha ratio and the second memory cell is characterized by a second alpha ratio smaller than the first alpha ratio.

Abstract: A device includes a semiconductor substrate having a first region and a second region. The device further includes a first pair of fin structures within the first region. The device further includes a second pair of fin structures within the second region. A top surface of the semiconductor surface between fin structures within the first pair is higher than a top surface of the semiconductor surface between the first pair and the second pair.

Abstract: An integrated circuit device includes a FinFET disposed over a doped region of a first type dopant, wherein the FinFET includes a first fin structure and first source/drain (S/D) features, the first fin structure having a first width; and a fin-based well strap disposed over the doped region of the first type dopant, wherein the fin-based well strap includes a second fin structure and second S/D features, the second fin structure having a second width that is larger than the first width, wherein the fin-based well strap connects the doped region to a voltage.