Abstract: The present invention relates to a semiconductor device and a method for manufacturing the same. According to the present invention, a method of manufacturing a semiconductor device includes: forming a recess on a semiconductor substrate; forming a first gate electrode material and a hard mask layer on an entire surface including the recess; etching the hard mask layer and the first gate electrode material to form the first gate electrode pattern on a lower portion of inside of the recess; forming a second gate electrode material on an entire surface including the recess; and etching the second gate electrode material and separating the second gate electrode material.

Abstract: The present invention provides flooring material which comprises a thermal conductive base material with a resin film including a carbon nano-tube; or a thermal conductive sheet. The flooring material of the present invention has high floor heating efficiency because thermal conduction is high and can save energy.

Abstract: Disclosed is a method for preparing an electrochemical device, comprising the steps of: charging an electrochemical device using an electrode active material having a gas generation plateau potential in a charging period to an extent exceeding the plateau potential; and degassing the electrochemical device. An electrochemical device, which comprises an electrode active material having a gas generation plateau potential in a charging period, and is charged to an extent exceeding the plateau potential and then degassed, is also disclosed.

Abstract: According to the present invention, a method of manufacturing a semiconductor device includes forming a recess on a semiconductor substrate, forming a first gate electrode material and a hard mask layer on an entire surface including the recess, etching the hard mask layer and the first gate electrode material to form the first gate electrode pattern on a lower portion of inside of the recess, forming a second gate electrode material on an entire surface including the recess, and etching the second gate electrode material and separating the second gate electrode material.

Abstract: A nonvolatile memory device includes a semiconductor substrate having a first well region of a first conductivity type, and at least one semiconductor layer formed on the semiconductor substrate. A first cell array is formed on the semiconductor substrate, and a second cell array formed on the semiconductor layer. The semiconductor layer includes a second well region of the first conductivity type having a doping concentration greater than a doping concentration of the first well region of the first conductivity type. As the doping concentration of the second well region is increased, a resistance difference may be reduced between the first and second well regions.

Abstract: Disclosed is a method for preparing an electrochemical device, comprising the steps of: charging an electrochemical device using an electrode active material having a gas generation plateau potential in a charging period to an extent exceeding the plateau potential; and degassing the electrochemical device. An electrochemical device, which comprises an electrode active material having a gas generation plateau potential in a charging period, and is charged to an extent exceeding the plateau potential and then degassed, is also disclosed. Some electrode active materials provide high capacity but cannot be applied to a high-capacity battery due to the gas generation. This is because a battery using such electrode active materials should be charged to an extent exceeding the gas generation plateau potential in order to realize a high capacity. To solve the problems caused by the gas generation, the battery is charged to an extent exceeding the plateau potential, and then degassed.

Abstract: Disclosed is a battery pack system to supply current necessary to operate an external device, including a battery module including battery cells which can be charged and discharged, a temperature sensor, an auxiliary power unit to supply a charge and discharge pulse current to the battery module, and a controller to connect the auxiliary power unit to the battery module so that the charge and discharge pulse current is supplied to the battery module when a measured temperature (Tbat) of the battery module is less than a set temperature (Tcrit) based on information detected by the temperature sensor before the battery module is electrically connected to the external device and to interrupt the supply of the charge and discharge pulse current to the battery module when the temperature of the battery module becomes equal to or greater than the set temperature (Tcrit) and an operating method of the same.

Abstract: The present invention relates to a microvesicle that is derived from nucleated mammalian cells, which are smaller than the nucleated cells. The microvesicles of the present invention can be used in the delivery of a therapeutic or diagnostic substance to specific tissues or cells, and more particularly, relates to microvesicles derived from monocytes, macrophages, dendritic cells, stem cells or the like, which can be used to deliver specific therapeutic or diagnostic substances for treating and/or diagnosing tissue associated with cancer, diseased blood vessels, inflammation, or the like.

Abstract: The present invention relates to a lithium-containing metal composite oxide comprising paramagnetic and diamagnetic metals, which satisfies any one of the following conditions: (a) the ratio of intensity between a main peak of 0±10 ppm (I0ppm) and a main peak of 240±140 ppm (I240ppm), (I0ppm/I240ppm), is less than 0.117·Z wherein z is the ratio of moles of the diamagnetic metal to moles of lithium; (b) the ratio of line width between the main peak of 0±10 ppm (I0ppm) and the main peak of 240±140 ppm (I240ppm), (W240ppm/W0ppm), is less than 21.45; and (c) both the conditions (a) and (b). The peaks of the lithium-containing metal composite oxide are obtained according to the 7Li—NMR measurement conditions and means disclosed herein.

Abstract: Provided are a secondary battery, a battery module, and a battery pack, which have improved safety. Particularly, since a bulletproof material is disposed on the inside and/or the outside of an exterior part, even when a conductive needle-shaped member penetrates a secondary battery, heating, burning, discharge of evaporated electrolyte, and electrical contact between the needle-shaped member and an electrode can be prevented, thereby improving safety of the secondary battery, the battery module, and the battery pack.

Abstract: A semiconductor device includes a semiconductor substrate including a first region having a cell region and a second region having a peripheral circuit region, first transistors on the semiconductor substrate, a first protective layer covering the first transistors, a first insulation layer on the first protective layer, a semiconductor pattern on the first insulation layer in the first region, second transistors on the semiconductor pattern, a second protective layer covering the second transistors, the second protective layer having a thickness greater than that of the first protective layer, and a second insulation layer on the second protective layer and the first insulation layer of the second region.

Abstract: A circuit board having a board body includes a via structure. The via structure includes a conductive connector passing through the board body and a conductive shield member surrounding at least a portion of the conductive connector. The shield member prevents distortion of a data signal applied to the conductive connector, and also intercepts electromagnetic waves generated by the conductive connector.

Abstract: On embodiment of a contact structure may include a lower insulation layer on a lower substrate, an upper substrate on the lower insulation layer, a groove penetrating the upper substrate to extend into the lower insulation layer, the groove below an interface between the upper substrate and the lower insulation layer, an upper insulation layer in the groove, and a contact plug penetrating the upper insulation layer in the groove to extend into the lower insulation layer.

Abstract: Disclosed is a battery safety device having a first metal plate, a second metal plate, and a pressure-sensitive conducting film interposed between both metal plates and adapted to exhibit electrical conductivity when a predetermined pressure or higher is applied. The first and second metal plates are electrically connected to the positive and negative electrodes of the battery, respectively. The safety device connected to a battery prevents the battery from being damaged or at least from igniting or exploding, even when an external impact caused by pressure, a nail, or a nipper or an external pressure is applied to the battery, by conducting the current of the battery to the safety device and discharging the battery before the battery is damaged by the external impact or external pressure.

Abstract: Provided are a transistor of a semiconductor device and a method for manufacturing the same. A gate induced drain leakage (GIDL) current is reduced by decreasing a work function at an upper portion of a gate electrode, and a threshold voltage of the transistor is maintained by maintaining a work function at a lower portion of the gate electrode at a high level, thereby reducing a leakage current of the transistor and reducing a read time and a write time of the semiconductor device. The transistor of the semiconductor device includes: a recess with a predetermined depth in a semiconductor substrate; a first gate electrode disposed within the recess; and a second gate electrode disposed on the first gate electrode into which ions of one or more of nitrogen (N), oxygen (O), arsenic (As), aluminum (Al), and hydrogen (H) are doped.

Abstract: A semiconductor device includes a semiconductor substrate including a first region having a cell region and a second region having a peripheral circuit region, first transistors on the semiconductor substrate, a first protective layer covering the first transistors, a first insulation layer on the first protective layer, a semiconductor pattern on the first insulation layer in the first region, second transistors on the semiconductor pattern, a second protective layer covering the second transistors, the second protective layer having a thickness greater than that of the first protective layer, and a second insulation layer on the second protective layer and the first insulation layer of the second region.

Abstract: The present invention relates to an upstream ozone contact tank for removing residual ozone. The upstream ozone contact tank comprises an inlet through which purified raw water flows, at least one contact chamber, at least one reaction chamber, an upstream contact chamber, and an outlet that discharges ozone-treated raw water. Especially, the invention provides an upstream contact chamber between the reaction chamber and outlet, wherein the upstream contact chamber includes carbonaceous filter media mounted on a porous plate. An openable gate unit is installed at the lower part of a panel partitioning a final reaction chamber and the upstream contact chamber and controls flow rate. Additionally, the invention enables upstream flow of the raw water flowing into the upstream contact chamber from the final reaction chamber so that the raw water may pass through the carbonaceous filter media upwardly.

Abstract: The present invention relates to a semiconductor device and a method for manufacturing the same. According to the present invention, a method of manufacturing a semiconductor device includes: forming a recess on a semiconductor substrate; forming a first gate electrode material and a hard mask layer on an entire surface including the recess; etching the hard mask layer and the first gate electrode material to form the first gate electrode pattern on a lower portion of inside of the recess; forming a second gate electrode material on an entire surface including the recess; and etching the second gate electrode material and separating the second gate electrode material.

Abstract: A mobile terminal is provided. The mobile terminal includes a shot setting part, an image input part, a meta information extractor, and a meta information inserting part. The shot setting part sets shooting conditions and the image input part photographs an image using an optical zoom lens under the set shooting conditions and processes the photographed image. The meta information extractor extracts the shooting conditions set by the shot setting part as meta information and the meta information inserting part inserts the meta information extracted from the meta information extractor into the image processed by the image input part.

Abstract: A nonvolatile memory device includes a semiconductor substrate having a first well region of a first conductivity type, and at least one semiconductor layer formed on the semiconductor substrate. A first cell array is formed on the semiconductor substrate, and a second cell array formed on the semiconductor layer. The semiconductor layer includes a second well region of the first conductivity type having a doping concentration greater than a doping concentration of the first well region of the first conductivity type. As the doping concentration of the second well region is increased, a resistance difference may be reduced between the first and second well regions.