Abstract: A system on chip includes a plurality of master devices, a plurality of slave devices that supply data in response to requests of the plurality of master devices and pointer update logic configured to process the requests from the plurality of master devices sequentially in a pipeline manner.

Abstract: A semiconductor device may comprise a first bit line, a second bit line, a memory cell connected to the first bit line, a bit line sense amplifier circuit and a control circuit. The bit line sense amplifier circuit may be coupled to the memory cell. The bit line sense amplifier circuit may include a first inverter having an input node coupled to the first bit line and an output node coupled to the second bit line, and a second inverter having an input node coupled to the second bit line and an output node coupled to the first bit line. The control circuit may be configured to activate the first inverter without activating the second inverter during a first time period and to activate the first inverter and the second inverter at the same time during a second time period after the first time period.

Abstract: A system on chip (SOC) includes a slave device, a plurality of master devices, an interconnect device and a plurality of service controllers. The master devices generate requests to demand services from the slave device. The interconnect device is coupled to the slave device and the master devices through respective channels, and the interconnect device performs an arbitrating operation on the requests. The service controllers control request flows from the master devices adaptively depending on an operational environment change of the SOC.

Abstract: A redundancy circuit includes a redundancy decoder, a fuse array, and a decoder. The redundancy decoder decodes a redundancy enable signal generated when an address of a defective cell matches an input address. The decoded redundancy enable signal is used to activate a spare column select line connected with a redundancy block to be substituted for the defective cell designated by the defective cell address. The fuse array includes fuse elements to designate segments in the redundancy block based on availability of the segments. The decoder decodes coding signals from the fuse array to connect at least one of the fuse elements with the spare column select line.

Abstract: The present invention relates to a conductive polymer composition having high viscosity and high conductivity, and more particularly, to a conductive polymer composition having excellent electrical conductivity and stability by adding a thixotropic agent, which is dissociated in an aqueous solution to generate negative charges, to PEDOT.

Abstract: A system-on-chip bus system and an operating method of the same are provided. The bus system includes a master device, a slave device and an interconnector coupled between the master device and the slave device. The interconnector includes a synchronization/compaction block to control traffic provided from a master device to a slave device. When a write request traffic and a corresponding write data traffic are all provided from the master device, the synchronization/compaction block may transfer the two traffics to the slave device.

Abstract: There are provided a ceramic electronic component and a method of manufacturing the same. The ceramic electronic component includes: a ceramic element; and an internal electrode layer formed within the ceramic element, having a thickness of 0.5 ?m or less, and including a non-electrode region formed therein, wherein an area ratio of the non-electrode region to an electrode region of the internal electrode layer, in a cross section of the internal electrode layer is between 0.1% and 10%, and the non-electrode region includes a ceramic component.

Abstract: A backbone channel transmits first through third channel packets among Advanced eXtensible Interface (AXI) 5 channel packets. The backbone channel is managed by dividing the backbone channel into a first sub-channel and a second sub-channel, transmitting the first channel packet through the first sub-channel, transmitting the second channel packet through the second sub-channel, and transmitting the third channel packet through both the first sub-channel and the second sub-channel.

Abstract: A system-on-chip bus system and an operating method of the same are provided. The bus system includes a master device, a slave device and an interconnector coupled between the master device and the slave device. The interconnector includes a synchronization/compaction block to control traffic provided from a master device to a slave device. When a write request traffic and a corresponding write data traffic are all provided from the master device, the synchronization/compaction block may transfer the two traffics to the salve device.

Abstract: There are provided a ceramic electronic component and a method of manufacturing the same. The ceramic electronic component includes: a ceramic element; and an internal electrode layer formed within the ceramic element, having a thickness of 0.5 ?m or less, and including a non-electrode region formed therein, wherein an area ratio of the non-electrode region to an electrode region of the internal electrode layer, in a cross section of the internal electrode layer is between 0.1% and 10%, and the non-electrode region includes a ceramic component.

Abstract: A semiconductor memory device includes a sense amplifier circuit region including first wells disposed in a first direction, a driving circuit region including second wells disposed in a second direction, and a conjunction region disposed at an intersection region of the sense amplifier circuit region and the driving circuit region, a part of each of the first wells extending from the sense amplifier circuit region into the conjunction region, and the second wells being outside of the conjunction region.

Abstract: In one aspect, a memory device includes a memory cell array, parallel internal data paths which transmit internal data to and from the memory cell array, a data driver which transmits and receives external data, and a data buffer which delays and transfers the external data received by the data driver to the internal data paths, and which delays and transfers the internal data transmitted from the memory cell array to the data driver. The memory device further includes an error correction code generator which generates an error correction code (EC) based on the internal data transmitted on the internal data paths, an EC buffer which delays the error correction code generated by the error correction code generator, an EC driver which transmits the error correction codes delayed by the EC buffer, and a latency controller which variably controls a delay time of at least one of the data buffer and the EC buffer.

Abstract: A method of repairing a word line of a memory device includes receiving a row address, comparing a received row address with a row address of a defective cell, enabling a normal word line and a redundant word line, which correspond to the row address, according to a result of the row address comparison, receiving a column address, comparing a received column address with a column address of the defective cell, and performing a memory access operation on one of the normal word line and the redundant word line according to a result of the column address comparison.

Abstract: A memory refresh method includes selecting at least one bank from among N banks of a memory device, and activating K word lines from among a plurality of word lines included in the at least one bank during one of L refresh cycles of a refresh period. Each of the N banks comprises M word lines, N, K and M are each a natural number greater than or equal to two, L is a natural number less than or equal to M, and K is equal to M*N/L.

Abstract: A semiconductor memory device includes a memory cell array, a refresh control circuit, an address counter and an address converter. The memory cell array includes a plurality of memory cells. The refresh control circuit is configured to receive a refresh command and output m refresh control signals during one refresh cycle for refreshing all the memory cells of the semiconductor memory device. The address counter is configured to generate counting signals for refreshing memory cells in response to the m refresh control signals. The address converter is configured to receive the counting signals and output refresh addresses by converting the counting signals in response to a cycle select signal. The address converter is configured to output refresh addresses such that the number of m refresh control signals during one refresh cycle is variable.

Abstract: Example embodiments are directed to a bandwidth synchronization circuit and a bandwidth synchronization method. The bandwidth synchronization circuit includes an upsizer and a syncdown unit. The upsizer includes a sync packer and a sync unpacker operating according to a first clock. The syncdown unit is connected to the upsizer and performs a syncdown operation on data of the upsizer in response to a second clock of a frequency lower than a frequency of the first clock.

Abstract: There is provided multilayered ceramic electronic component having a 0603 size or less, the multilayered ceramic electronic component including: a ceramic body including a plurality of internal electrodes and dielectric layers disposed between the internal electrodes; and external electrodes disposed on outer surfaces of the ceramic body and electrically connected to the internal electrodes, wherein when a region in which the internal electrodes are overlapped is defined as an active region in a cross section of a central portion in a length direction of the ceramic body, taken in width and thickness directions thereof, the entire area of the cross section taken in the width and thickness directions is defined as At, and an area of the active region is defined as Aa, the following equation is satisfied: 65%?Aa/At?90%.

Abstract: A semiconductor memory device is provided. The semiconductor memory device includes a memory block including a plurality of memory cells; a default refresh controller configured to receive a refresh command from a host, to generate a default refresh signal, and to control the memory cells to be refreshed; and a weak cell refresh controller configured to receive the default refresh signal, to generate a weak cell refresh signal, and to control a weak cell among the memory cells to be refreshed. The weak cell may be refreshed at least one more time during a refresh period during which all of the memory cells are refreshed by the default refresh controller. The semiconductor memory device performs at least one more refresh on a weak cell having a data retention time shorter than a refresh period apart from a normal default refresh, thereby preventing data loss.

Abstract: An adhesive composition for semiconductor devices, an adhesive film, and a dicing die bonding film, the adhesive composition including an elastomer resin, an epoxy resin, a curable phenolic resin, a curing accelerator, a silane coupling agent, and a filler, wherein the silane coupling agent includes an epoxy group-containing silane coupling agent and a transition metal scavenging functional group-containing silane coupling agent.

Abstract: A system on chip (SOC) include at least one slave device, a plurality of master devices, a plurality of service controllers and an interconnect device. The master devices generate requests to demand services from the slave device, respectively. The service controllers generate urgent information signals and priority information signals for each of the master devices. The interconnect device is coupled to the slave device and the master devices through respective channels. The interconnect device performs an arbitrating operation on the requests based on the priority information signals and controls request flows between the slave device and the master devices based on the urgent information signals.