Abstract: An active matrix organic light emitting display and a method of forming the same. The AM-OLED including a substrate with a plurality of thin film transistors serving as driver circuits, a dielectric layer formed conformally on the substrate and the thin film transistors, a first insulating layer formed on parts of the dielectric layer to define the exposed surface of the dielectric layer as a predetermined transparent electrode area, a transparent electrode formed conformally on the predetermined transparent electrode area, a second insulating layer formed on both sides of the transparent electrode to expose parts of surface of the transparent electrode, an organic electroluminescent layer formed on the transparent electrode, and a metal electrode formed on the organic electroluminescent layer. The insulating layer smoothes the transparent electrode surface enhancing the luminescent characteristics of the AM-OLED.

Abstract: Isolated polypeptides containing one of SEQ ID NOs: 1-11. Also disclosed are (i) isolated nucleic acids encoding the polypeptides and related expression vectors and host cells; (ii) purified antibodies that recognize the polypeptides; and (iii) methods of producing the polypeptides, diagnosing infection with a coronavirus, and producing the antibodies.

Abstract: The present disclosure relates generally to the manufacturing of semiconductor devices, and more particularly to an improved connection structure for semiconductor devices. A connection structure for a semiconductor device includes: a peanut-shaped opening comprising a narrow area and one or more wide areas, wherein the narrow area is between two of the one or more wide areas; and a conductive plug for filling at least partially the peanut-shaped opening.

Abstract: A thin film transistor for use in an active matrix liquid crystal display includes a substrate, a source and a drain regions, and at least a gate electrode. The substrate includes therein a plurality of intrinsic regions, at least one first doped region and two second doped regions. The first doped region is disposed between the plurality of intrinsic regions. The plurality of intrinsic regions are linked together to form a connection structure via the first doped region, and the two second doped regions are disposed at both ends of the connection structure, respectively. The source and the drain regions are coupled to the two second doped regions disposed at both ends of the connection structure, respectively. The gate electrode is disposed over the plurality of intrinsic regions, such that the periphery of each of the plurality of intrinsic regions and the periphery of a corresponding gate electrode are substantially aligned with each other.

Abstract: An FM demodulator has a differential output demodulator for receiving an FM signal and for outputting a positive differential signal and a negative differential signal of a demodulated signal of the FM signal, a DC offset detector electrically connected to the differential output demodulator for generating a DC offset signal according to peak signals of the positive differential signal and the negative differential signal, and a correction circuit electrically connected to the differential output demodulator and the DC offset detector to compensate for the demodulated signal according to the DC offset signal.

Abstract: A light-emitting device and the fabrication method thereof. A substrate is provided. A plurality of active elements are formed on the substrate, defining a plurality of pixel areas. A color filter is formed on the pixel areas. The surface of the color filter is planarized to reduce roughness. An electrode is formed on the color filter. An light-emitting layer is formed on the electrode. A second electrode is formed on the light-emitting layer.

Abstract: First, a substrate with at least one thin film transistor is provided. A protection layer and a planarization layer are sequentially formed on the substrate. Then, the planarization layer is patterned and an opening is formed in the planarization above the thin film transistor. An etching process is performed by using the planarization layer as a hard mask to form a first contact hole, which is extending through to the thin film transistor, in the protection layer. Then, the planarization layer surrounding the opening is partially removed to form a second contact hole in the planarization layer above the first contact hole. After that, a transparent conductive layer is formed on the surface of the planarization layer, the second contact hole, the first contact hole, partial contact plug and electrically connected to the thin film transistor via the first contact hole and the second contact hole.

Abstract: An FM demodulator has a differential output demodulator for receiving an FM signal and for outputting a positive differential signal and a negative differential signal of a demodulated signal of the FM signal, a DC offset detector electrically connected to the differential output demodulator for generating a DC offset signal according to peak signals of the positive differential signal and the negative differential signal, and a correction circuit electrically connected to the differential output demodulator and the DC offset detector to compensate for the demodulated signal according to the DC offset signal.

Abstract: There is disclosed a semiconductor sensor for measuring the contact shear stress distribution between the socket of an above-knee (AK) prostheses and the soft tissue of an amputee's stump. The sensor is fabricated by the micro-electro-mechanical system (MEMS) technology, and its main sensing part is 2-X shaped with a flange structure. The sensor is prepared by anisotropic wet etching of bulk silicon in KOH solution and a square flange above the sensing diaphragm is formed through surface micromachining of deposited SiO2 thin film. This invention has the following characteristics: piezo-resistivity of the monolithic silicon will be utilized to convert shear deformation of the sensor into an electrical signal and a micro sensor which can measure the shear force vector acting on the sensing flange.

Abstract: A thin film transistor for use in an active matrix liquid crystal display includes a substrate, a source and a drain regions, and at least a gate electrode. The substrate includes therein a plurality of intrinsic regions, at least one first doped region and two second doped regions. The first doped region is disposed between the plurality of intrinsic regions. The plurality of intrinsic regions are linked together to form a connection structure via the first doped region, and the two second doped regions are disposed at both ends of the connection structure, respectively. The source and the drain regions are coupled to the two second doped regions disposed at both ends of the connection structure, respectively. The gate electrode is disposed over the plurality of intrinsic regions, such that the periphery of each of the plurality of intrinsic regions and the periphery of a corresponding gate electrode are substantially aligned with each other.

Abstract: A method for generating a user's favorite logo of an image display system includes the following steps: (a) providing a plurality of images in the image display system, (b) selecting an image from the plurality of images, (c) encoding the selected image, (d) storing the encoded image in a memory, (e) retrieving the encoded image from the memory when restarting the display system, (f) decoding the encoded image, (g) and displaying the decoded image on the display system.

Abstract: A method and a system for accessing memory data are provided. When an interface unit receives a memory accessing request from a processing unit, a non-cacheable memory buffer unit determines if a memory address corresponds to that in the memory accessing request; if yes, retrieving the memory address; if no, forwarding the memory accessing request to an arbitration unit for accessing data in a memory unit. During transmission of data from the memory unit to the interface unit, the non-cacheable memory buffer unit retrieves the data to simultaneously update stored data. The non-cacheable memory buffer unit pre-reads memory address data following the retrieved data to enhance a data reading speed for the processing unit. During writing data into the memory unit, the non-cacheable memory buffer unit updates the stored data by the written data if a memory address of the written data is identical to that of the stored data.

Abstract: An active matrix organic light emitting display and a method of forming the same. The AM-OLED including a substrate with a plurality of thin film transistors serving as driver circuits, a dielectric layer formed conformally on the substrate and the thin film. transistors, a first insulating layer formed on parts of the dielectric layer to define the exposed surface of the dielectric layer as a predetermined transparent electrode area, a transparent electrode formed conformally on the predetermined transparent electrode area, a second insulating layer formed on both sides of the transparent electrode to expose parts of surface of the transparent electrode, an organic electroluminescent layer formed on the transparent electrode, and a metal electrode formed on the organic electroluminescent layer. The insulating layer smoothes the transparent electrode surface enhancing the luminescent characteristics of the AM-OLED.

Abstract: A fertilizer dispensing device includes a tubular body which confines a chamber for receiving granular fertilizers having a first dimension, and which is adapted to be inserted into and buried by soil. The fertilizer dispensing device has a dispensing port formed through the tubular body. The dispensing port has a second dimension smaller than the first dimension so that the granular fertilizers could be carried through the port and into the soil when dissolved.

Abstract: In this invention, a contact type micro piezoresistive shear-stress sensor is fabricated by the micro-electro-mechanical (MEMS) technology, and its main sensing part is a 2-X shaped with a flange structure, for measuring the shear stress distribution between socket of above-knee (AK) prostheses and the soft tissue of amputee's stump. Comparing with a conventional shear stress sensor, this invention owns the following characteristics: piezo-resistivity of the monolithic silicon will be utilized to convert shear deformation of the sensor into electrical signal and a micro sensor which can measure the shear force vector acting the sensing flange.

Abstract: The present invention relates to a method for transferring one or more active ingredients between different phase carriers, which includes: (a) providing a solid, semi-solid, or nonaqueous liquid drug which contains at least one active ingredient; (b) admixing said drug with water or water solution to form an admixture; and (c) nebulizing said admixture to form liquid fine drops containing said active ingredient. This method enables the active ingredient stored in a solid phase carrier to transfer into an aqueous phase carrier, or enables the active ingredient stored in a non-aqueous liquid carrier to transfer into an aqueous phase carrier. The aqueous phase carrier contains the active ingredient can then be nebulized with a nebulizer by means of ultrasonic vibration. The present invention provides a new method for controlling administration by transferring the active ingredient between different phase carriers.

Abstract: The invention relates to a method for modifying questionnaire contents, comprising a recording procedure, an analysis procedure, and a modification procedure. The method is applied to a questionnaire with a plurality of questions, each of which having a plurality of options. The recording procedure stores in a questionnaire database the selection results of all questions obtained from the investigation using the questionnaire beforehand. The analysis procedure analyzes the selection ratios of all options according to the selection results. The modification procedure deletes a particular question from the questionnaire when the selection ratio of an option in the question is higher than a predetermined value. The specification also discloses a corresponding system of modifying questionnaire contents.

Abstract: A semiconductor memory device comprising a test structure is disclosed. The semiconductor device includes a plurality of memory cells, word lines, bit lines, and test pads; the word lines including a first set and a second set of word lines, connected to a first and second word line test pad, respectively; the bit lines including a first set and a second set of bit lines, connected to a first and second bit line test pad, respectively. The first set of word lines and the first set of bit lines access a first set of memory cells, the first set of word lines and the second set of bit lines access a second set of memory cells, the second set of word lines and the first set of bit lines access a third set of memory cells, and the second set of word lines and the second set of bit lines access a fourth set of memory cells.

Abstract: A method of fabricating bonding pad structure for improving bonding pad surface quality. A substrate has a bonding pad thereon. A passivation is formed on the bonding pad to expose the bonding pad. A sacrificial layer is formed on the passivation and an opening is formed within the sacrificial layer to expose the bonding pad. A Cu/Al alloy is formed on the passivation to at least cover the bonding pad. The sacrificial layer and the Cu/Al alloy thereon are removed, such that the Cu/Al alloy remains on the bonding pad.